Small but mighty. Fast but cool. That’s GaN in QFN. The EPC2361 delivers serious power in a tiny 3 mm x 5 mm package — perfect for high-performance designs where size, speed, and thermal efficiency matter. 100 V | 1 mΩ RDS(on) Ultra-low switching losses Runs cool even at high current QFN package for easy assembly From robotics to AI to DC-DC power, this little powerhouse punches well above its weight. Download datasheet- https://hubs.ly/Q03J2MMG0 See the full QFN lineup: https://hubs.ly/Q03J2K7d0
The EPC2361 is a fantastic example of GaN's power and efficiency in a compact form factor. It’s impressive to see how GaN technology continues to enable cutting-edge applications like robotics, AI, and DC-DC power, offering both speed and thermal efficiency in such a small package. At SinoGaN, we are equally committed to advancing GaN technology. We specialize in high-quality Gallium Nitride (GaN) epitaxial wafers and Aluminum Nitride (AlN) templates, available in various sizes and types to meet the needs of high-performance applications. Our 8-inch silicon substrate power GaN wafers and 6-inch silicon substrate RF GaN wafers are designed for top-tier power and RF systems, offering the reliability and performance that next-gen devices demand. We would love the opportunity to collaborate and explore how our GaN-based solutions can complement your innovative designs.