Semiconductor Device Designing and Fabrication intern @SSPL, DRDO| Electronics and Communications Engineering
Thermal Limits of GaN HEMTs I’ve been working with Silvaco TCAD to study how thermal stress impacts Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), devices that are reshaping power electronics, radar, EVs, and next-gen communication systems. Here’s what the simulations revealed: > Threshold voltage shifted from -6 V to -7.5 V under heating. > Drain current collapsed at higher voltages due to self-heating. > Mobility degradation in the 2DEG channel limited the performance. The takeaway? GaN’s wide bandgap advantage is undeniable, but thermal reliability is the make-or-break factor for its future in high-power, high-frequency systems. From defense radar to electric vehicles, success depends on mastering thermal management at the device level. I take pride in bridging semiconductor device physics with practical engineering challenges, as the next wave of innovation will be driven not only by speed and power, but by the ability to ensure stability under thermal stress. #GaN #HEMT #TCAD #Semiconductors #PowerElectronics #Innovation #ThermalManagement
