The document summarizes the working of a semiconductor diode laser. It discusses how a semiconductor diode laser is constructed by forming a junction between p-type and n-type semiconductor materials to create a pn-junction. When a forward bias is applied, electrons and holes are driven into the depletion region where they recombine, emitting radiation. Once population inversion is achieved at higher currents, stimulated emission occurs, producing a coherent laser beam from one end of the diode. The document also discusses how holography uses interference patterns produced by a split coherent laser beam to record both intensity and phase information of an object on photographic film.