SPICE MODEL of 2SK4207 (Professional+BDP Model) in SPICE PARK
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The document contains a device modeling report for the 2SK4207 MOSFET from Bee Technologies, detailing various characteristics such as transconductance, capacitance, output, switching time, and body diode performance. It includes numerous tables comparing simulation results with measurements, highlighting percentage errors across different parameters. Numerous simulation results demonstrate the performance accuracy of the MOSFET under varying electrical conditions.
SPICE MODEL of 2SK4207 (Professional+BDP Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK4207 MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 3 Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 1 3.830 3.877 1.23 2 5.392 5.413 0.39 5 8.408 8.379 -0.34 10 11.609 11.528 -0.70 20 15.594 15.719 0.80 VDS=20V
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 4 V_VGS 0V 2V 4V 6V 8V 10V I(U1:2) 0A 4A 8A 12A 16A 20A VGS VDS 20V 0 U1 2SK4207 Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 5 Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 0.1 3.700 3.781 2.18 0.2 3.800 3.847 1.24 0.5 3.920 3.980 1.52 1 4.100 4.130 0.73 2 4.370 4.345 -0.57 5 4.755 4.779 0.50 10 5.210 5.281 1.36 20 6.030 6.013 -0.29 VDS=20V
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 6 VGS 10V 0 VDS U1 2SK4207 V_VDS 0V 0.5V 1.5V 2.5V 3.5V 4.5V 5.5V I(U1:2) 0A 1.0A 2.0A 3.0A 4.0A 5.0A 6.0A 7.0A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: VGS=10(V), ID=6.5(A) Parameter Unit Measurement Simulation %Error RDS(on) Ω 0.780 0.780 0
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 7 V_VDS 0V 2V 4V 6V 8V 10V I(U1:2) 0A 2A 4A 6A 8A 10A VGS 0 VDS U1 2SK4207 10.0V Output Characteristics Circuit Simulation result Evaluation circuit VGS = 4V 8.0V 4.2V 4.4V V 4.6V V 4.8V V 5.0V V 5.5V 6.0V
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 3560.000 3524.000 -1.01 0.2 3395.000 3398.000 0.09 0.5 3070.000 3076.000 0.20 1 2695.000 2673.000 -0.82 2 2143.000 2150.500 0.35 5 1440.000 1419.530 -1.42 10 986.000 957.470 -2.89 20 605.000 617.400 2.05 50 315.000 330.400 4.89 100 186.500 195.700 4.93 Measurement Simulation
- 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 9 Time*1mA 0 20n 40n 60n 80n 100n V(W1:3) 0V 4V 8V 12V 16V 20V U1 2SK4207 D1 dmod ID 13A VDD 400V 0 - + W1 ION = 0 IOFF = 1mA WIGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=400(V), VGS=10(V), ID=13(A) Parameter Unit Measurement Simulation %Error Qgs nC 16.200 16.138 -0.38 Qgd nC 13.900 13.777 -0.88 Qg nC 46.500 46.729 0.49
- 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 10 Time 1.6us 1.8us 2.0us 2.2us 2.4us 2.6us V(U1:1) V(U1:2)/40 0V 5V 10V 15V 20V L1 30nH 1 2 R2 50 R1 1u V1TD = 2u TF = 4n PW = 5u PER = 500u V1 = 0 TR = 4n V2 = 10 VDD 400 0 RL 62 L2 50nH 12 U1 2SK4207 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=400(V), VGS=0/10(V), ID=6.5(A), RG=50, RL=62 Parameter Unit Measurement Simulation %Error ton ns 88.000 87.943 -0.06
- 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 11 V_VDS 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V I(VDS) 100mA 1.0A 10A 100A 0 VDS U1 2SK4207 Body Diode Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 12 Comparison Graph Simulation result Comparison table IDR (A) -VDS (V) %Error Measurement Simulation 0.1 0.590 0.601 1.86 0.2 0.628 0.630 0.32 0.5 0.670 0.675 0.75 1 0.698 0.714 2.29 2 0.756 0.761 0.66 5 0.860 0.848 -1.40 10 0.986 0.955 -3.14 20 1.155 1.136 -1.65 26 1.228 1.238 0.80
- 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 13 Time 6.0us 7.0us 8.0us 9.0us 10.0us 11.0us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA 0 V1TD = 0ns TF = 5ns PW = 8us PER = 100us V1 = -9.4V TR = 5ns V2 = 10.65V R1 50 U1 D2SK4207_P Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 500.000 496.787 -0.64 trb ns 970.000 964.775 -0.54 trr ns 1470.000 1461.562 -0.57
- 14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 14 Reverse Recovery Characteristics Reference trj = 500(ns) trb = 970(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement
- 15. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 15 V_VGS 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V -I(VGS) 0A 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA 9mA 10mA VGS 0 R1 1G U1 2SK4207 ESD PROTECTION DIODE Zener Voltage Characteristics Circuit Simulation result Evaluation circuit
- 16. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 16 Zener Voltage Characteristics Reference IZ = 1(mA) VZ =61.75(V) at IZ=1mA Measurement