1. Chapter 4 - 1
ISSUES TO ADDRESS...
• What types of defects arise in solids?
• Can the number and type of defects be varied
and controlled?
• How do defects affect material properties?
• Are defects undesirable?
Chapter 4: Imperfections in Solids
• What are the solidification mechanisms?
2. Chapter 4 - 2
• Solidification- result of casting of molten material
– 2 steps
• Nuclei form
• Nuclei grow to form crystals – grain structure
• Start with a molten material – all liquid
Imperfections in Solids
• Crystals grow until they meet each other
Adapted from Fig. 4.15 (b), Callister & Rethwisch 9e.
grain structure
crystals growing
nuclei
liquid
[Photomicrograph
courtesy
of
L.
C.
Smith
and
C.
Brady,
the
National
Bureau
of
Standards,
Washington,
DC
(now
the
National
Institute
of
Standards
and
Technology,
Gaithersburg,
MD.)]
3. Chapter 4 - 3
Imperfections in Solids
There is no such thing as a perfect crystal.
• What are these imperfections?
• Why are they important?
Many of the important properties of
materials are due to the presence of
imperfections.
4. Chapter 4 - 4
• Vacancy atoms
• Interstitial atoms
• Substitutional atoms
Point defects
Types of Imperfections
• Dislocations Line defects
• Grain Boundaries Area defects
5. Chapter 4 - 5
• Vacancies:
-vacant atomic sites in a structure.
• Self-Interstitials:
-"extra" atoms positioned between atomic sites.
Point Defects in Metals
Vacancy
distortion
of planes
self-
interstitial
distortion
of planes
6. Chapter 4 - 6
Boltzmann's constant
(1.38 x 10
-23
J/atom-K)
(8.62 x 10
-5
eV/atom-K)
Nv
N
= exp
Qv
kT
No. of defects
No. of potential
defect sites
Activation energy
Temperature
Each lattice site
is a potential
vacancy site
• Equilibrium concentration varies with temperature!
Equilibrium Concentration:
Point Defects
7. Chapter 4 - 7
• We can get Qv from
an experiment.
Nv
N
= exp
- Qv
kT
Measuring Activation Energy
• Measure this...
Nv
N
T
exponential
dependence!
defect concentration
• Replot it...
1/ T
N
Nv
ln
-Qv /k
slope
8. Chapter 4 - 8
• Find the equil. # of vacancies in 1 m3
of Cu at 1000C.
• Given:
ACu = 63.5 g/mol
ρ= 8.4 g/cm3
Qv = 0.9 eV/atom NA = 6.02 x 1023
atoms/mol
Estimating Vacancy Concentration
For 1 m3
, N =
NA
ACu
ρ x x 1 m3
= 8.0 x 1028
sites
• Answer:
Nv = (2.7 x 10-4
)(8.0 x 1028
) sites = 2.2 x 1025
vacancies
= 2.7 x 10-4
8.62 x 10-5
eV/atom-K
0.9 eV/atom
1273 K
Nv
N
= exp
- Qv
kT
9. Chapter 4 - 9
Two outcomes if impurity (B) added to host (A):
• Solid solution of B in A (i.e., random dist. of point defects)
• Solid solution of B in A plus particles of a new
phase (usually for a larger amount of B)
OR
Substitutional solid soln.
(e.g., Cu in Ni)
Interstitial solid soln.
(e.g., C in Fe)
Second phase particle
-- different composition
-- often different structure.
Imperfections in Metals (i)
10. Chapter 4 - 10
Imperfections in Metals (ii)
Conditions for substitutional solid solution (S.S.)
• W. Hume – Rothery rule
– 1. Δr (atomic radius) < 15%
– 2. Proximity in periodic table
• i.e., similar electronegativities
– 3. Same crystal structure for pure metals
– 4. Valency
• All else being equal, a metal will have a greater tendency
to dissolve a metal of higher valency than one of lower
valency
11. Chapter 4 - 11
Imperfections in Metals (iii)
Application of Hume–Rothery rules – Solid
Solutions
1. Would you predict
more Al or Ag
to dissolve in Zn?
2. More Zn or Al
in Cu?
Table on p. 135, Callister & Rethwisch 9e.
Element Atomic Crystal Electro- Valence
Radius Structure nega-
(nm) tivity
Cu 0.1278 FCC 1.9 +2
C 0.071
H 0.046
O 0.060
Ag 0.1445 FCC 1.9 +1
Al 0.1431 FCC 1.5 +3
Co 0.1253 HCP 1.8 +2
Cr 0.1249 BCC 1.6 +3
Fe 0.1241 BCC 1.8 +2
Ni 0.1246 FCC 1.8 +2
Pd 0.1376 FCC 2.2 +2
Zn 0.1332 HCP 1.6 +2
12. Chapter 4 - 12
Impurities in Solids
• Specification of composition
– weight percent
100
x
2
1
1
1
m
m
m
C
m1 = mass of component 1
100
x
2
1
1
'
1
m
m
m
n
n
n
C
nm1 = number of moles of component 1
– atom percent
13. Chapter 4 - 13
• are line defects,
• slip between crystal planes result when dislocations move,
• produce permanent (plastic) deformation.
Dislocations:
Schematic of Zinc (HCP):
• before deformation • after tensile elongation
slip steps
Line Defects
14. Chapter 4 - 14
Imperfections in Solids
Linear Defects (Dislocations)
– Are one-dimensional defects around which atoms are
misaligned
• Edge dislocation:
– extra half-plane of atoms inserted in a crystal structure
– b perpendicular () to dislocation line
• Screw dislocation:
– spiral planar ramp resulting from shear deformation
– b parallel () to dislocation line
Burger’s vector, b: measure of lattice distortion
15. Chapter 4 - 15
Imperfections in Solids
Edge Dislocation
Fig. 4.4, Callister & Rethwisch 9e. (Adapted from
A. G. Guy, Essentials of Materials Science, McGraw-Hill
Book Company, New York, NY, 1976, p. 153.)
16. Chapter 4 - 16
Imperfections in Solids
Screw Dislocation
Adapted from Fig. 4.5, Callister & Rethwisch 9e.
[Figure (b) from W. T. Read, Jr.,Dislocations in Crystals,
McGraw-Hill Book Company, New York, NY, 1953.]
Burgers vector b
Dislocation
line
b
(a)
(b)
Screw Dislocation
17. Chapter 4 - 17
Imperfections in Solids
Dislocations are visible in electron micrographs
Fig. 4.7, Callister & Rethwisch 9e.
(Courtesy of M. R. Plichta, Michigan
Technological University.)
18. Chapter 4 - 18
Planar Defects in Solids
• One case is a twin boundary (plane)
– Essentially a reflection of atom positions across the twin
plane.
• Stacking faults
– For FCC metals an error in ABCABC packing sequence
– Ex: ABCABABC
Adapted from Fig. 4.10,
Callister & Rethwisch 9e.
19. Chapter 4 - 19
Catalysts and Surface Defects
• A catalyst increases the
rate of a chemical
reaction without being
consumed
• Active sites on catalysts
are normally surface
defects
Fig. 4.11, Callister & Rethwisch 9e.
Fig. 4.12, Callister & Rethwisch 9e.
[From W. J. Stark, L. Mädler, M. Maciejewski, S. E.
Pratsinis, and A. Baiker, “Flame Synthesis of
Nanocrystalline Ceria/Zirconia: Effect of Carrier
Liquid,” Chem. Comm., 588–589 (2003). Reproduced
by permission of The Royal Society of Chemistry.]
Single crystals of
(Ce0.5Zr0.5)O2
used in an automotive
catalytic converter
20. Chapter 4 - 20
Microscopic Examination
• Crystallites (grains) and grain boundaries.
Vary considerably in size. Can be quite large.
– ex: Large single crystal of quartz or diamond or Si
– ex: Aluminum light post or garbage can - see the
individual grains
• Crystallites (grains) can be quite small (mm or
less) – necessary to observe with a
microscope.
21. Chapter 4 - 21
• Useful up to 2000X magnification.
• Polishing removes surface features (e.g., scratches)
• Etching changes reflectance, depending on crystal
orientation.
Micrograph of
brass (a Cu-Zn alloy)
0.75 mm
Optical Microscopy
Fig. 4.14(b) & (c), Callister &
Rethwisch 9e.
crystallographic planes
Courtesy
of
J.E.
Burke,
General
Electric
Co.
22. Chapter 4 - 22
Grain boundaries...
• are imperfections,
• are more susceptible
to etching,
• may be revealed as
dark lines,
• change in crystal
orientation across
boundary. Fig. 4.15(a) & (b), Callister &
Rethwisch 9e.
[Fig. 4.15(b) is courtesy of L.C.
Smith and C. Brady, the National
Bureau of Standards, Washington,
DC (now the National Institute of
Standards and Technology,
Gaithersburg, MD).]
Optical Microscopy
ASTM grain
size number
N = 2n-1
number of grains/in2
at 100x
magnification
Fe-Cr alloy
(b)
grain boundary
surface groove
polished surface
(a)
23. Chapter 4 - 23
• Point, Line, and Area defects exist in solids.
• The number and type of defects can be varied
and controlled (e.g., temperature controls vacancy
concentration).
• Defects affect material properties (e.g., grain
boundaries control crystal slip).
• Defects may be desirable or undesirable
(e.g., dislocations may be good or bad, depending
on whether plastic deformation is desirable or not).
Summary