![A Physical-based Method for Parameter
Extraction of On-Chip Spiral Inductor
Amaya Goñi, Javier del Pino, Javier Garcia, Benito Gonzalez, S.L. Khemchandani and Antonio
Hernaindez.
Dep. Ingeniería Electrónica y Automática / Instituto Universitario de Microelectrónica Aplicada (IUMA), Universidad de Las Palmas de Gran Canaria, Spain.
VI Conferencia de Dispositivos Electrónicos (Nacional),
Madrid, España,
2007
Abstract
In this work, a new comprehensive method to extract the inductor equivalent model parameters is developed. Frequency-
dependent expressions for the model components are obtained from the simplification of the 2r-model Y-parameter
equations. By analyzing the influence of the components value on the inductor quality factor and inductance, the
frequencies at which the parameters will be evaluated are selected. The method has been validated by comparison with
measurements of inductors fabricated in a 0.35 pm process. Results showa gooda greement over a broad-band frequency
up to 10 GHz.
Measurements & Simulations
Mixer Design
0
Figure 4 Measured and extracted quality Figure 6 Measured and extracted quality
factor for three different RS values. actor and inductance for three different Cp
values.
Figure 1. Two-port 21-equivalent circuit model for on-chip spiral inductor.
Conclusions
In this work, a fast automated method to
extract the inductor equivalent model
parameters is developed. It is based on the Figure 7 Extracted RSUB from the
measurements
Figure 8 Measured and extracted quality
actor for three different resistance RSUB
inductor 21-model Y-parameter equations, values..
which are simplified to derive frequency-
dependent expressions for the model
components. An analysis of the parameters
influence on the inductor quality factor and
inductance allows selecting the frequencies
at which the parameters are evaluated. The
method has been verified across inductors
fabricated in a SiGe 0.35 ptm foundry
process. The extracted models show
excellent agreement with the measured data
sets over the frequency range up to 10 GHz.
Figure 10 Measured and extracted Q and L for two coils I1 (rExr-90 gim, w=6 m
and n=3.5) and 12 (rEx]-lOOIgm, w=6 gim and n=5.5).
Acknowledgement
This work was supported in part by the Spanish MEC under projects TEC-2005-08091-C03-02 and TEC-2005-06784-C02-02.
INSTITUTO UNIVERSITARIO DE MICROELECTRÓNICA APLICADA (IUMA)
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A Physical-based Method for Parameter Extraction of On-Chip Spiral Inductor
- 1. A Physical-based Method for Parameter Extraction of On-Chip Spiral Inductor Amaya Goñi, Javier del Pino, Javier Garcia, Benito Gonzalez, S.L. Khemchandani and Antonio Hernaindez. Dep. Ingeniería Electrónica y Automática / Instituto Universitario de Microelectrónica Aplicada (IUMA), Universidad de Las Palmas de Gran Canaria, Spain. VI Conferencia de Dispositivos Electrónicos (Nacional), Madrid, España, 2007 Abstract In this work, a new comprehensive method to extract the inductor equivalent model parameters is developed. Frequency- dependent expressions for the model components are obtained from the simplification of the 2r-model Y-parameter equations. By analyzing the influence of the components value on the inductor quality factor and inductance, the frequencies at which the parameters will be evaluated are selected. The method has been validated by comparison with measurements of inductors fabricated in a 0.35 pm process. Results showa gooda greement over a broad-band frequency up to 10 GHz. Measurements & Simulations Mixer Design 0 Figure 4 Measured and extracted quality Figure 6 Measured and extracted quality factor for three different RS values. actor and inductance for three different Cp values. Figure 1. Two-port 21-equivalent circuit model for on-chip spiral inductor. Conclusions In this work, a fast automated method to extract the inductor equivalent model parameters is developed. It is based on the Figure 7 Extracted RSUB from the measurements Figure 8 Measured and extracted quality actor for three different resistance RSUB inductor 21-model Y-parameter equations, values.. which are simplified to derive frequency- dependent expressions for the model components. An analysis of the parameters influence on the inductor quality factor and inductance allows selecting the frequencies at which the parameters are evaluated. The method has been verified across inductors fabricated in a SiGe 0.35 ptm foundry process. The extracted models show excellent agreement with the measured data sets over the frequency range up to 10 GHz. Figure 10 Measured and extracted Q and L for two coils I1 (rExr-90 gim, w=6 m and n=3.5) and 12 (rEx]-lOOIgm, w=6 gim and n=5.5). Acknowledgement This work was supported in part by the Spanish MEC under projects TEC-2005-08091-C03-02 and TEC-2005-06784-C02-02. INSTITUTO UNIVERSITARIO DE MICROELECTRÓNICA APLICADA (IUMA) UNIVERSIDAD DE LAS PALMAS DE GRAN CANARIA (ULPGC)