![ALD Process and
ALD Process and
Equipments
Equipments
The Verano 5500™
A 300-mm ALD system by
Aviza Technology, Inc [2].
Process Temperature [1]
[1] [1]
1
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![ALD Process and
ALD Process and
Equipments
Equipments
The Verano 5500™
A 300-mm ALD system by
Aviza Technology, Inc [2].
One cycle
Process Temperature [1]
Process Temperature [1]
[1] [1]
Acceptable
temperature range
for deposition.
1
1
"Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. <
"Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. <
www.icknowledge.com/misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf>.
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”Atomic Layer Deposition," Aviza Technology. 26 April 06.
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Atomic Layer Depositionnnnwerantyjsty.ppt
- 2. Presentation Overview Presentation Overview • Definition of ALD Definition of ALD • Brief history of ALD Brief history of ALD • ALD process and equipments ALD process and equipments • ALD applications ALD applications • Summary Summary
- 3. Definition of ALD Definition of ALD • ALD is a method of applying thin ALD is a method of applying thin films to various substrates with films to various substrates with atomic scale precision. atomic scale precision. • Similar in chemistry to chemical vapor deposition (CVD), Similar in chemistry to chemical vapor deposition (CVD), except that the ALD reaction breaks the CVD reaction into except that the ALD reaction breaks the CVD reaction into two half-reactions, keeping the precursor materials separate two half-reactions, keeping the precursor materials separate during the reaction. during the reaction. • ALD film growth is self-limited and based on surface ALD film growth is self-limited and based on surface reactions, which makes achieving atomic scale deposition reactions, which makes achieving atomic scale deposition control possible. control possible. • By keeping the precursors separate throughout the coating By keeping the precursors separate throughout the coating process, atomic layer thickness control of film grown can be process, atomic layer thickness control of film grown can be obtained as fine as atomic/molecular scale per monolayer. obtained as fine as atomic/molecular scale per monolayer. Ref: Ref: "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. < "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. <http://en.wikipedia.org/wiki /Atomic_Layer_Deposition>. >.
- 4. Definition of ALD Definition of ALD • ALD is a method of applying thin films to various substrates ALD is a method of applying thin films to various substrates with atomic scale precision. with atomic scale precision. • Similar in chemistry to CVD, except Similar in chemistry to CVD, except that the ALD reaction breaks the CVD that the ALD reaction breaks the CVD reaction into two half-reactions, reaction into two half-reactions, keeping the precursor materials keeping the precursor materials separate during the reaction. separate during the reaction. • ALD film growth is self-limited and based on surface ALD film growth is self-limited and based on surface reactions, which makes achieving atomic scale deposition reactions, which makes achieving atomic scale deposition control possible. control possible. • By keeping the precursors separate throughout the coating By keeping the precursors separate throughout the coating process, atomic layer thickness control of film grown can be process, atomic layer thickness control of film grown can be obtained as fine as atomic/molecular scale per monolayer. obtained as fine as atomic/molecular scale per monolayer. Ref: Ref: "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. < "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. <http://en.wikipedia.org/wiki /Atomic_Layer_Deposition>. >.
- 5. • ALD is a method of applying thin films to various substrates ALD is a method of applying thin films to various substrates with atomic scale precision. with atomic scale precision. • Similar in chemistry to chemical vapor deposition (CVD), Similar in chemistry to chemical vapor deposition (CVD), except that the ALD reaction breaks the CVD reaction into except that the ALD reaction breaks the CVD reaction into two half-reactions, keeping the precursor materials separate two half-reactions, keeping the precursor materials separate during the reaction. during the reaction. • ALD film growth is ALD film growth is self-limited and based on surface reactions, which which makes achieving atomic scale makes achieving atomic scale deposition control possible. deposition control possible. • By keeping the precursors separate throughout the coating By keeping the precursors separate throughout the coating process, atomic layer thickness control of film grown can be process, atomic layer thickness control of film grown can be obtained as fine as atomic/molecular scale per monolayer. obtained as fine as atomic/molecular scale per monolayer. Definition of ALD Definition of ALD Ref: Ref: "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. < "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. <http://en.wikipedia.org/wiki /Atomic_Layer_Deposition>. >.
- 6. Definition of ALD Definition of ALD • ALD is a method of applying thin films to various substrates ALD is a method of applying thin films to various substrates with atomic scale precision. with atomic scale precision. • Similar in chemistry to chemical vapor deposition (CVD), Similar in chemistry to chemical vapor deposition (CVD), except that the ALD reaction breaks the CVD reaction into except that the ALD reaction breaks the CVD reaction into two half-reactions, keeping the precursor materials separate two half-reactions, keeping the precursor materials separate during the reaction. during the reaction. • ALD film growth is self-limited and based on surface ALD film growth is self-limited and based on surface reactions, which makes achieving atomic scale deposition reactions, which makes achieving atomic scale deposition control possible. control possible. • By keeping the precursors separate By keeping the precursors separate throughout the coating process, atomic throughout the coating process, atomic layer thickness control of film grown layer thickness control of film grown can be obtained as fine as can be obtained as fine as atomic/molecular scale per monolayer. atomic/molecular scale per monolayer. Ref: Ref: "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. < "Atomic Layer Deposition," Wikipedia: The Free Encyclopedia, Wikimedia Foundation, 24 April 06. <http://en.wikipedia.org/wiki /Atomic_Layer_Deposition>. >.
- 7. Brief History of ALD Brief History of ALD • Introduced in 1974 by Dr. Tuomo Introduced in 1974 by Dr. Tuomo Suntola and co-workers in Finland to Suntola and co-workers in Finland to improve the quality of ZnS films used improve the quality of ZnS films used in electroluminescent displays. in electroluminescent displays. • Recently, it turned out that ALD also produces outstanding Recently, it turned out that ALD also produces outstanding dielectric layers and attracts semiconductor industries for dielectric layers and attracts semiconductor industries for making High-K dielectric materials. making High-K dielectric materials. Ref: Ref: "History of Atomic Layer Deposition (ALD)," Finnish MicroNanoTechnology Network (FMNT), 24 April 2006. < "History of Atomic Layer Deposition (ALD)," Finnish MicroNanoTechnology Network (FMNT), 24 April 2006. <http://www.fmnt.fi /index.pl?id=2913&isa=Category&op=show>. >.
- 8. Brief History of ALD Brief History of ALD • Introduced in 1974 by Dr. Tuomo Suntola and co-workers in Introduced in 1974 by Dr. Tuomo Suntola and co-workers in Finland to improve the quality of ZnS films used in Finland to improve the quality of ZnS films used in electroluminescent displays. electroluminescent displays. • Recently, it turned out that ALD Recently, it turned out that ALD method also produces outstanding method also produces outstanding dielectric layers and attracted dielectric layers and attracted semiconductor industries for making semiconductor industries for making High-K dielectric materials. High-K dielectric materials. Ref: Ref: "History of Atomic Layer Deposition (ALD)," Finnish MicroNanoTechnology Network (FMNT), 24 April 2006. < "History of Atomic Layer Deposition (ALD)," Finnish MicroNanoTechnology Network (FMNT), 24 April 2006. <http://www.fmnt.fi /index.pl?id=2913&isa=Category&op=show>. >.
- 9. ALD Process and ALD Process and Equipments Equipments • Releases sequential precursor gas Releases sequential precursor gas pulses to deposit a film one layer at a pulses to deposit a film one layer at a time on the substrate. time on the substrate. • The precursor gas is introduced into the process chamber and The precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. A second produces a monolayer of gas on the wafer surface. A second precursor of gas is then introduced into the chamber reacting with the precursor of gas is then introduced into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. first precursor to produce a monolayer of film on the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition deposition • Since each pair of gas pulses (one cycle) produces exactly one Since each pair of gas pulses (one cycle) produces exactly one monolayer of film, the thickness of the resulting film may be precisely monolayer of film, the thickness of the resulting film may be precisely controlled by the number of deposition cycles. controlled by the number of deposition cycles. Ref: Ref: A. Knop–Gericke, "Preparation of Model Systems by Physical Methods," a lecture given at Modern Methods in Heterogeneous A. Knop–Gericke, "Preparation of Model Systems by Physical Methods," a lecture given at Modern Methods in Heterogeneous Catalysis Research Lecture Series, Fritz Haber Institute of the Max Planck Society. 24 April 06. Catalysis Research Lecture Series, Fritz Haber Institute of the Max Planck Society. 24 April 06. < <http://w3.rz-berlin.mpg.de/%7Ejentoft/lehre/catalysis0405.html>. >.
- 10. • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the A first precursor gas is introduced into the process chamber and produces a monolayer of process chamber and produces a monolayer of gas on the wafer surface. Then a second gas on the wafer surface. Then a second precursor of gas is introduced into the chamber precursor of gas is introduced into the chamber reacting with the first precursor to produce a reacting with the first precursor to produce a monolayer of film on the wafer surface. monolayer of film on the wafer surface. Two fundamental mechanisms: Chemisorption saturation process Sequential surface chemical reaction process • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition deposition • Since each pair of gas pulses (one cycle) produces exactly one monolayer of film, Since each pair of gas pulses (one cycle) produces exactly one monolayer of film, the thickness of the resulting film may be precisely controlled by the number of the thickness of the resulting film may be precisely controlled by the number of deposition cycles. deposition cycles. ALD Process and ALD Process and Equipments Equipments Ref: Ref: A. Knop–Gericke, "Preparation of Model Systems by Physical Methods," a lecture given at Modern Methods in Heterogeneous A. Knop–Gericke, "Preparation of Model Systems by Physical Methods," a lecture given at Modern Methods in Heterogeneous Catalysis Research Lecture Series, Fritz Haber Institute of the Max Planck Society. 24 April 06. Catalysis Research Lecture Series, Fritz Haber Institute of the Max Planck Society. 24 April 06. < <http://w3.rz-berlin.mpg.de/%7Ejentoft/lehre/catalysis0405.html>. >.
- 11. ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (Step 1a) deposition (Step 1a) • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech Inc., "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < 24 April 06. <http://www.cambridgenanotech.com/>. >.
- 12. • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (Step 1b) deposition (Step 1b) Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < Inc., 24 April 06. <http://www.cambridgenanotech.com/ >. >.
- 13. ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (Step 1c) deposition (Step 1c) • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < Inc., 24 April 06. <http://www.cambridgenanotech.com/ >. >.
- 14. ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (Step 2a) deposition (Step 2a) • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < Inc., 24 April 06. <http://www.cambridgenanotech.com/ >. >.
- 15. ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (Step 2b) deposition (Step 2b) • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < Inc., 24 April 06. <http://www.cambridgenanotech.com/ >. >.
- 16. ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (Step 2c) deposition (Step 2c) • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < Inc., 24 April 06. <http://www.cambridgenanotech.com/ >. >.
- 17. ALD Process and ALD Process and Equipments Equipments • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition (after 3 cycles) deposition (after 3 cycles) • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process Ref: Ref: "Atomic Layer Deposition," Cambridge NanoTech "Atomic Layer Deposition," Cambridge NanoTech Inc., 24 April 06. < Inc., 24 April 06. <http://www.cambridgenanotech.com/ >. >.
- 18. ALD Process and ALD Process and Equipments Equipments • Releases sequential precursor gas pulses to deposit a film one layer at a time. Releases sequential precursor gas pulses to deposit a film one layer at a time. • A first precursor gas is introduced into the process chamber and produces a monolayer of A first precursor gas is introduced into the process chamber and produces a monolayer of gas on the wafer surface. Then a second precursor of gas is introduced into the chamber gas on the wafer surface. Then a second precursor of gas is introduced into the chamber reacting with the first precursor to produce a monolayer of film on the wafer surface. reacting with the first precursor to produce a monolayer of film on the wafer surface. Two fundamental mechanisms: Two fundamental mechanisms: Chemisorption saturation process Chemisorption saturation process Sequential surface chemical reaction process Sequential surface chemical reaction process • Example: ALD cycle for Al Example: ALD cycle for Al2 2O O3 3 deposition deposition • Since each pair of gas Since each pair of gas pulses (one cycle) produces pulses (one cycle) produces exactly one monolayer of exactly one monolayer of film, the thickness of the film, the thickness of the resulting film may be resulting film may be precisely controlled by the precisely controlled by the number of deposition number of deposition cycles. cycles. Ref: Ref: "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. <www. icknowledge.com/misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf>. >. Step coverage and deposition rate Vs. Step coverage and deposition rate Vs. deposition technique. deposition technique.
- 19. ALD Process and ALD Process and Equipments Equipments Four main types of ALD reactors Four main types of ALD reactors • Closed system chambers Closed system chambers • Open system chambers Open system chambers • Semi-closed system chambers Semi-closed system chambers • Semi-open system chambers Semi-open system chambers
- 20. ALD Process and ALD Process and Equipments Equipments Four main types of ALD reactors Four main types of ALD reactors • Closed system chambers (most common) Closed system chambers (most common) • Open system chambers Open system chambers • Semi-closed system chambers Semi-closed system chambers • Semi-open system chambers Semi-open system chambers
- 21. ALD Process and ALD Process and Equipments Equipments Four main types of ALD reactors Four main types of ALD reactors • Closed system chambers Closed system chambers (most common) (most common) The reaction chamber walls are designed to effect the The reaction chamber walls are designed to effect the transport of the precursors. transport of the precursors. • Open system chambers Open system chambers • Semi-closed system chambers Semi-closed system chambers • Semi-open system chambers Semi-open system chambers Schematic of a closed ALD system Ref: Ref: "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < 06. < www.icknowledge.com/misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf >. >.
- 22. ALD Process and ALD Process and Equipments Equipments The Verano 5500™ A 300-mm ALD system by Aviza Technology, Inc [2]. Process Temperature [1] [1] [1] 1 1 "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < www.icknowledge.com/misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf > > 2 2 ”Atomic Layer Deposition," Aviza Technology. 26 April 06. ”Atomic Layer Deposition," Aviza Technology. 26 April 06. < <http://www.avizatechnology.com/products/verano.shtml >.
- 23. ALD Process and ALD Process and Equipments Equipments The Verano 5500™ A 300-mm ALD system by Aviza Technology, Inc [2]. One cycle Process Temperature [1] Process Temperature [1] [1] [1] Acceptable temperature range for deposition. 1 1 "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < www.icknowledge.com/misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf>. >. 2 2 ”Atomic Layer Deposition," Aviza Technology. 26 April 06. ”Atomic Layer Deposition," Aviza Technology. 26 April 06. < <http://www.avizatechnology.com/products/verano.shtml >.
- 24. ALD Applications ALD Applications • High-K dielectrics for CMOS High-K dielectrics for CMOS • Semiconductor memory (DRAM) Semiconductor memory (DRAM) • Cu interconnect barrier Cu interconnect barrier • Deposition in porous structures Deposition in porous structures
- 25. ALD Applications ALD Applications • High-K dielectrics for CMOS High-K dielectrics for CMOS • Semiconductor memory (DRAM) Semiconductor memory (DRAM) • Cu interconnect barrier Cu interconnect barrier • Deposition in porous structures Deposition in porous structures
- 26. Candidates for High-K dielectrics Candidates for High-K dielectrics Film Film Precursors Precursors Al Al2 2O O3 3 Al(CH) Al(CH)3 3, H , H2 2O or O O or O3 3 HfO HfO2 2 HfCl HfCl4 4 or TEMAH, H or TEMAH, H2 2O O ZrO ZrO2 2 ZrCl ZrCl4 4, H , H2 2O O ALD Applications ALD Applications • High-K dielectrics for CMOS High-K dielectrics for CMOS • Reduces leakage current • Faster switching speed • Cooler transistors Ref: "Intel's High-k/Metal Gate Announcement," Intel® Corporation. 26 April, 06. <http://www.intel.com/technology/silicon/micron.htm#high>.
- 27. ALD Applications ALD Applications • High-K dielectrics for CMOS High-K dielectrics for CMOS • Semiconductor memory (DRAM) Semiconductor memory (DRAM) • Cu interconnect barrier Cu interconnect barrier • Deposition in porous structures Deposition in porous structures All these applications take advantage of uniformity, conformal step coverage, precise thickness control of deposited films, which can be achieved by ALD deposition method. Step coverage and deposition rate Vs. Step coverage and deposition rate Vs. deposition technique. deposition technique. Ref: Ref: "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April "Technology Backgrounder: Atomic Layer Deposition," IC Knowledge LLC, 24 April 06. < 06. < www.icknowledge.com/misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf >. >.
- 28. Summary Summary • Advantages Advantages Stoichiometric films with large area uniformity and 3D Stoichiometric films with large area uniformity and 3D conformality. conformality. Precise thickness control. Precise thickness control. Low temperature deposition possible. Low temperature deposition possible. Gentle deposition process for sensitive substrates. Gentle deposition process for sensitive substrates. • Disadvantages Disadvantages Deposition Rate slower than CVD. Deposition Rate slower than CVD. Number of different material that can be deposited is fair Number of different material that can be deposited is fair compared to MBE. compared to MBE.