![VARIATION OF FERMI LEVEL WITH TEMPERATURE AND
CONCENTRATION OF IMPURITIES
P-TYPE SEMICONDUCTOR
• Temperature at 0K Fermi level mid way between the
acceptor level and valence level
• When temperature increases, some of the electrons
from valence band will go to acceptor energy level [EA].
Therefore the Fermi level shifts upward. At high
temperature 500 K, the Fermi level reaches intrinsic
level Ei .
• If the impurity atoms are increased from 1021 atoms /m3
to 1024 atoms / m3 the hole concentration increases and
hence the Fermi level decrease.
N-TYPE SEMICONDUCTOR
• Temperature at 0K Fermi level mid way between the
Donar level and valence level
• When temperature increases, some of the electrons
moves from valence band to Donar energy level [ED].
Therefore the Fermi level shifts upward. At high
temperature 500 K, the Fermi level reaches intrinsic
level E.
• If the impurity atoms are increased from 1021 atoms /m3
to 1024 atoms / m3, the electron concentration increases
and hence the Fermi level decrease](https://image.slidesharecdn.com/basicsofsemiconductingmaterials-200328164747/85/Basics-of-semiconducting-materials-8-320.jpg)
![Difference between Elemental and
Compound Semiconductors
Elemental semiconductors Compound semiconductors
1 These are made from single element.
(mixed) element.
These are made from compound
2 These are made from IV group and VI
group elements
These are made from III and V [or] II and VI
elements
3 These are called as indirect band gap
semiconductor (electron-hole
recombination takes place through traps)
These are called as direct band gap
semiconductor (electron-hole recombination
takes place directly)
4 Heat is produced in the recombination Photons are emitted during recombination
5 Life time of charge carriers is more due to
indirect recombination
Life time of charge carriers is less due to
direct recombination
6 Current amplification is more Current amplification is less.
7 These are used for making diodes,
transistor, etc.
These are used for making LED, laser diodes,
etc.
8 Example : Ge, Si Example : GaAs, GaP, CdS, MgO](https://image.slidesharecdn.com/basicsofsemiconductingmaterials-200328164747/85/Basics-of-semiconducting-materials-10-320.jpg)
Basics of semiconducting materials
- 1. S.Senthil Kumar Department of physics SSM College of Engineering ,Komarapalayam, Namakkal (D.t)
- 2. Semiconducting Materials • A semiconductor has electrical conductivity between that of a conductor and an insulator. • Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.
- 3. Properties of semiconductor 1. The resistivity of semiconductors lies between a conductor and an Insulator. (It various from 10–4 to 0.5 Wm). 2. At 0 K it behave as insulator. 3. If we increase the temperature of semiconductor, its electrical conductivity also increases 4. They have an empty conduction band and almost filled valence band 0 K. 5. They are formed by a covalent bonds 6. They have small energy gap (or) band gap.
- 4. CLASSIFICATION OF SEMICONDUCTORS • Intrinsic semiconductors • A pure semiconductor without any impurities is known as an intrinsic semiconductor. • Example: Ge, Si (In the form of pure) • These are made from single element. They also known as indirect band gap semiconductors • Compound Semiconductors • The Compound Semiconductor is a semiconductor compound composed of elements from two or more different groups of the periodic table. They also known as direct band gap semiconductors. • i.e., III – V group, II – VI group and IV – VI group. • Here the recombination electron and hole takes place directly, during recombination photons are emitted. • Example : GaAs, GaP,
- 5. CARRIER CONCENTRATION IN INTRINSIC SEMI- CONDUCTORS • In a semiconductor both electrons and holes are charge carriers (know as carrier concentration). A semiconductor in which holes and electrons are created by thermal excitation across the energy gap is called an intrinsic semiconductor. • In an intrinsic semiconductor the number of holes is equal to the number of free electrons. • At T = 0K, valence band is completely filled and conduction band is completely empty. Thus the intrinsic semiconductor behaves as a perfect insulator. • At T > 0K, the electron from the valence band shifted to conduction band across the band gap.
- 6. CARRIER CONCENTRATION IN INTRINSIC SEMI- CONDUCTORS
- 7. EXTRINSIC SEMICONDUCTOR A semiconductor in which the impurity atoms are added by doping process is called Extrinsic semiconductor. The addition of impurities increases the carrier concentration and conductivity. There are two types of impurities. Donor impurity which leads to N-type semiconductor. Acceptor impurity which leads to P-type semiconductor. N-type Semiconductor (Donor impurity) • 1. Donor impurity means it donates the electron to the semiconductor materials. • 2. Pentavalent atoms (five valence electrons in their outer most orbit) are called as donor impurities. Example : Phosphorous, Arsenic and Antimony. • 3. When a pentavalent atom is added with tetravalent atoms (Ge and Si), the covalent bond is formed and one element is left free. Thus one impurity atom is surrounded by four Ge or Si atoms. • 4. Each impurity atom donates one free electron. Thus this type of semiconductor is called as N-type semiconductor P – type Semiconductor (Acceptor Impurities) • 1. Acceptor impurity means it ready to accept an electron to form the covalent bond in semiconductor materials. • Trivalent atoms (three valence electrons in their outer most orbits) are called as acceptor impurities. Example: Aluminum, Gallium, Boron and Indium • When a trivalent atom is added with tetravalent atoms (Ge or Si), the covalent bond is formed and there is one vacancy (hole) for one electron in one of the covalent bonds, thereby one impurity atom is surrounded by four Ge or Si atoms • Thus each impurity atom hole is ready to accept an electron. Thus this type of semiconductor is called P-type semiconductor
- 8. VARIATION OF FERMI LEVEL WITH TEMPERATURE AND CONCENTRATION OF IMPURITIES P-TYPE SEMICONDUCTOR • Temperature at 0K Fermi level mid way between the acceptor level and valence level • When temperature increases, some of the electrons from valence band will go to acceptor energy level [EA]. Therefore the Fermi level shifts upward. At high temperature 500 K, the Fermi level reaches intrinsic level Ei . • If the impurity atoms are increased from 1021 atoms /m3 to 1024 atoms / m3 the hole concentration increases and hence the Fermi level decrease. N-TYPE SEMICONDUCTOR • Temperature at 0K Fermi level mid way between the Donar level and valence level • When temperature increases, some of the electrons moves from valence band to Donar energy level [ED]. Therefore the Fermi level shifts upward. At high temperature 500 K, the Fermi level reaches intrinsic level E. • If the impurity atoms are increased from 1021 atoms /m3 to 1024 atoms / m3, the electron concentration increases and hence the Fermi level decrease
- 9. Difference between N-type and P-type semiconductor S. No N-type P-type 1. It is donor type It is acceptor type 2. Impurity atom is pentavalent Impurity atom is trivalent 3. Donor level lies close to the bottom of the conduction band Acceptor level lies close to the top of the valence band.
- 10. Difference between Elemental and Compound Semiconductors Elemental semiconductors Compound semiconductors 1 These are made from single element. (mixed) element. These are made from compound 2 These are made from IV group and VI group elements These are made from III and V [or] II and VI elements 3 These are called as indirect band gap semiconductor (electron-hole recombination takes place through traps) These are called as direct band gap semiconductor (electron-hole recombination takes place directly) 4 Heat is produced in the recombination Photons are emitted during recombination 5 Life time of charge carriers is more due to indirect recombination Life time of charge carriers is less due to direct recombination 6 Current amplification is more Current amplification is less. 7 These are used for making diodes, transistor, etc. These are used for making LED, laser diodes, etc. 8 Example : Ge, Si Example : GaAs, GaP, CdS, MgO
- 11. Advantages and Disadvantage of Semiconductor Device Advantages • As semiconductor devices have no filaments, hence no power is needed to heat them to cause the emission of electrons. • Since no heating is required, semiconductor devices are set into operation as soon as the circuit is switched on. • During operation, semiconductor devices do not produce any humming noise. • Semiconductor devices require low voltage operation as compared to vacuum tubes. • Owing to their small sizes, the circuits involving semiconductor devices are very compact. • Semiconductor devices are shock proof. • Semiconductor devices are cheaper as compared to vacuum tubes. • Semiconductor devices have an almost unlimited life. • As no vacuum has to be created in semiconductor devices, they have no vacuum deterioration trouble. Disadvantage • The noise level is higher in semiconductor devices as compared to that in the vacuum tubes. • Ordinary semiconductor devices cannot handle as more power as ordinary vacuum tubes can do. • In high frequency range, they have poor responder.