SPICE MODEL of C4D40120D LTspice Model (Professional Model) in SPICE PARK
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The document provides a detailed modeling report for a silicon carbide Schottky diode (part number: C4D40120D) manufactured by Cree. It includes parameters for SPICE models, forward and reverse current characteristics with measurement and simulation comparisons, and total capacitance characteristics under various conditions. The report indicates close alignment between measured and simulated results, highlighting the performance and reliability of the diode model.
SPICE MODEL of C4D40120D LTspice Model (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: C4D40120D MANUFACTURER: CREE REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. DIODE MODEL PARAMETERS Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.750 0.768 2.40 0.2 0.820 0.806 -1.71 0.5 0.860 0.861 0.12 1 0.925 0.910 -1.62 2 0.975 0.974 -0.10 5 1.100 1.106 0.55 10 1.285 1.283 -0.16 20 1.589 1.603 0.88 40 2.215 2.208 -0.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Reverse Current Characteristic Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Comparison Graph Circuit Simulation result Comparison table IR (mA) VR (V) %Error Measurement Simulation 1250 4.00E-03 3.900E-03 -2.50 1350 1.47E-02 1.400E-02 -4.76 1450 5.24E-02 5.000E-02 -4.58 1550 1.71E-01 1.790E-01 4.86 1555 1.00E+00 1.00E+00 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Total Capacitance Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR (V) %Error Measurement Simulation 0.2 1445.000 1448.000 0.21 0.5 1310.000 1313.000 0.23 1 1150.000 1154.100 0.36 2 950.000 959.127 0.96 5 700.000 694.823 -0.74 10 530.000 522.351 -1.44 20 385.000 384.447 -0.14 50 255.000 251.905 -1.21 100 180.000 181.873 1.04 200 125.000 131.017 4.81 500 82.000 84.780 3.39 1000 59.000 61.201 3.73 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8