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Evaluation and Optimization of the
Thermal Performance of a Socketed
  Device for an HTOL Application
Considerations in the selection of a socket for a plastic
        molded, thermal enhanced package
        Nathanaël Loiseau+, Marco Michi*
                and James Forster*
        + Presto Engineering, * WELLS-CTI

                  2012 BiTS Workshop
                    March 4 - 7, 2012
Introduction
                                             Today’s device:
                                             •   More functionality
                                             •   Higher frequency
                                             •   More power / thermal dissipation
                                             •   Smaller size

                                            DESIGN OFFICE
Today’s HTOL:                                                     H.T.O.L. !
                                                             No, I don’t see that
•   From static to true application                              in my design
                                                                 specification
    environment simulation
                                                               HTOL OFFICE
•   Higher frequency                                                      A.P.P.L.I.C.A.T.I.O.N. !
•   Higher current                                                          No, I don’t see that
                                                                               in my reference
•   More power / thermal dissipation                                                norm


    Thermal considerations of socket and test board
               become more important
     03/2012     Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                         2
Content
  •    Technology challenge
  •    Environment challenge
  •    Thermal resistance definition
  •    DUT impact
  •    PCB impact
  •    Chamber impact
  •    Self heating impact
  •    Socket impact (DOE)
  •    Conclusion


Definition: HTOL High Temperature Operating Life
        Typically 1000 hours at Tambient 125 deg C or Tjunction 150°C.
          But other times and temps are performed
      03/2012     Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                          3
Technology challenge
                                              Package
                                              • Smaller, integration of several functions, dies
                                              • Power dissipation concentrated
                                              • Smaller surface for thermal exchange

                                              Advance process
                                              • Smaller size, higher frequency
                                              • IC Voltage ↘  IC current ↗  Current flow ↗
                                                 Socket & board self heating ↗
SOURCE: Semiconductor Industry Association.
The International Technology Roadmap for

                                              Customer willingness
Semiconductors, 2009 Edition. SEMATECH,
Austin, TX, 2009.

                                              • Static HTOL does not always reveal relevant
                                                failure mechanism
                                              • Dynamic HTOL closer to real life conditions
         03/2012                  Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                          4
Environment challenge
                                       Principle for HTOL

                                                     Tjunction DUT = Ta + Rja x PDISS

Chamber « Ta »
                                       •   Ta is regulated locally or globally in order to
Tjunction other   Tjunction DUT            have the correct Tjunction DUT
component
s


                                       Ta must be compatible with
Tboard             Tsocket
                                       • Other elements temperature (board, socket,
                                          components)
                                       • Chamber specification
                                           (ex: Tamin = Troom + 30°C if no cooling
                                             capability)

     03/2012                 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                     5
Thermal resistance definition
Thermal resistance for heat transfer
                            Electrical resistance for charge transfer

Thermal                                              Electrical
Important Equation                                   Important Equation
   R1-2 = T1 - T2                                       R1-2 = V1 - V2
            Heat/t                                             Charge/t

             Thermal                                    Electrical
             resistance                               - resistance                +
   HOT                      COLD                  LOW -                           + HIGH
    T1                       T2                    V1 -                           + V2
                                                      -                           +
              HEAT                                       Charge(-)


   03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                         6
Thermal resistance definition
Thermal resistance is                        Thermal resistance is not

•    The characterization of heat            •    A universal standard
     transfer between 2 points                     – JESD 51  17 documents
                                                   – MIL-STD-750E 13 methods
•    The key point to get thermal
     equilibrium and Tj under control •           A standard value available in IC data
      functionality & reliability of the         sheet or package specification
     IC

                                                               Rjca

    1/Rja = 1/Rjca + 1/Rjba                  Tj               Ta

                                                                Rjba



      03/2012      Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                           7
Thermal resistance definition
Soldered device vs Socketed device

•   Thermal resistance is typically given in device datasheet for the device
    soldered to a board in a certain environment

•   Thermal resistance of a socketed device is expected to be higher than
    one soldered to a PCB in same environment. Mostly unknown.

                                    Heat dissipation path:
                                    • Die – Case – Ambient
                                    • Die – IC Pads – Board – Ambient


                                    Heat dissipation path:
                                    • Die – Case – Socket – Ambient
                                    • Die – IC Pads – Socket – Board – Ambient


    03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                          8
Thermal resistance definition
Thermal resistance circuitry for a device in a socket
                Tambient
                             Rca                                               Temp of ambient Ta

DUT               Tcase
                             Rjc                                                   Temp of junction Tj
             Tjunction                                      Temp of case Tc
                                            Qin                                           Temp of pad Tp

  Tsignal pad       Rjs T            Rjp
                          die pad

SOCKET
     Rsb                                Rpb
Signal pad                              Package pad                                      Temp of contact Tct
to contact                                  to contact      Temp of the
interface                                     interface     board, PCB Tb
                 Tboard′              Top of board to                                 Temp of pad Tp
BOARD
                             Rbb      contact / socket
                 Tboard                      interface                 Temp of the board
                             Rba    Bottom of board to                 under the socket, Tb’
                Tambient             ambient interface

      03/2012              Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                   9
DUT impact
Thermally enhanced package
       = package with a pad dedicated for
• Thermal conduction to ground (always)
• Electrical connection to ground (sometimes)

Package configuration

      Leadframe based package                      Laminate based package
     = die attached on metal plate                  = die attached on a pcb




   03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                        10
DUT impact
Die assembly
     Stacked dies + Wire bonding                      Stacked dies + Flip-chip




Die / lid ratio
     7mm                   Measure done on 2 socketed device (same package,
                           same HTOL board, difference on die size only)
                             Device       Package         Die pad           Die            Rja
                                A                                       2.7x2.5mm       31°C/W
                                           7x7mm        5.1x5.1 mm
      7mm
                                B                                       3.3x2.5mm       22°C/W



                Chip designer choices  Rjc, Rjs, Rjp
              Often unknown values when designing an HTOL setup
    03/2012         Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                           11
PCB impact
Example of Rja
HVQFN56 soldered on application boards in same environment

       Application board #1                         Application board #2
    PCB                                        PCB
               Nbr of       PCB size                          Nbr of        PCB size
 thickness                                  thickness
               layer         (mm)                             layer          (mm)
   (mm)                                       (mm)

   1.17          10           30x60            1.43             10            35x80

           Rja = 36.4 °C/W                              Rja = 31.6 °C/W


     Material, size, thickness, stack up  Rbb, Rba
      In HTOL, depend of chamber size and DUT requirements


 03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                      12
Chamber impact
               From previous BiTS presentations, HTOL chamber
               often seen like:
               • A simple box
               • A “tunnel” between BIB’s
               • “Fresh” air at one side
               • Inconsistent air flow between boards
               • Extraction of heat capability
               For HTOL, JESD22-A108D:
                  The environmental chamber shall be capable of
                  maintaining the specified temperature within a
                  tolerance of ± 5 °C throughout the chamber while
                  parts are loaded and unpowered.
               For test cost reduction, most often:
               • Maximize the number of BIB’s in chamber
               • Maximize the number of site per BIB

03/2012   Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                 13
Chamber impact
Experimental results with a 1.3W DUT
• Chamber and BIB populated in     • Air flow modified on a BIB position
  order to keep maximum air flow     by adding a « box » on the socket
  around sockets




Ta =                             Ta =           Ta =                                      Ta =
85.9°C                           86.0°C         86.0°C                                    85.6°C
Tj =                             Tj =           Tj =                                      Tj =
146.9°C                          146.9°C        149.3°C                                   147.6°C

          Chamber & Life-test Engineer choices  Rba, Rca

     03/2012      Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                         14
Self heating impact
  With Joule effect, materials heat up according to I² x R
                                          For PCB
                                Max current in internal PCB trace
           4
                      30°C elevation - 35µm Copper
          3,5
                      10°C elevation - 35µm Copper
           3          30°C elevation - 17,5µm Copper

          2,5         10°C elevation - 17,5µm Copper
I (Amp)




           2

          1,5
                                                                                                                         For socket contacts
                                                                                                                               Current Carrying Capacity at Ambient
           1                                                                                                   150
                                                                                                               140
          0,5                                                                                                  130




                                                                                   Contactor Temperature, °C
                                                                                                               120                                                    Derated 25°C
           0
                                                                                                               110
                0            500             1000           1500    2000    2500                               100
                                              Trace larger (µm)                                                                                                       Derated 85°C
                                                                                                                90
                                                                                                                80
                                                                                                                70                                                    Derated 125°C
                                                                                                                60
                                                                                                                50
                                                                                                                40
                                                                                                                30
                                                                                                                20
                                                                                                                10
                                                                                                                 0
                                                                                                                     0   0,2        0,4          0,6          0,8        1            1,2
                                                                                                                                Individual Contactor Current, Amps




                    03/2012                          Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                                            15
Self heating impact
If the contacts or board traces
                                                         Tambient
generate heat, the heat transfer                                        Rca
from the DUT to ambient will                                Tcase
change                                     DUT
                                                                        Rjc
                                                        Tjunction                     Qin

                                             Tsignal pad     Rjs T             Rjp
                                                                   die pad

                                           SOCKET
                                                Rsb                               Rpb
                                                                     Qpin
                           Qpin            Signal pad                             Package pad
                                           to contact                                 to contact
                                           interface                                    interface
 New contributors                                          Tboard′              Top of board to
                                           BOARD
                                                                        Rbb     contact / socket
                         Qboard                            Tboard              Qboard
                                                                                       interface

                                                                        Rba   Bottom of board to
                                                         Tambient              ambient interface

    03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                         16
Self heating impact
Measure on HTOL board  also illustrates mutual heating between sites
•       with 1.3W DUT                                         Junction self heating with 1.3W at Ta = 85°C
•       780mA per DUT                        64                                                                              49,5
•       "1" used as Tj ref                                                                                                   49
                                             63
                                                           Self heating                                                      48,5
    10 11 12 13                                                  +                                   Tj-Ta
                                                                                                                             48
                                             62                                                      Rth(j-a)
                                                          mutual heating




                                                                                                                                    Rth(j-a) (°C/W)
                                Tj-Ta (°C)                                                                                   47,5
    2       6     3 14                       61                                                                              47
                                                                                               Self heating
                                                                                                                             46,5
    9        1    7   15                     60                                                    only
                                                                                                                             46
                                                                                                                             45,5
                                             59
    5        8    4    16                                                                                                    45
                                             58                                                                              44,5
                                                  0   1   2   3   4   5   6   7   8    9   10   11   12 13      14 15   16
                                                                           Nb of site loaded




         Self heating, mutual heating  Rsb, Rpb, Rbb, Rba

        03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                             17
Socket impact
   DOE in order to evaluate impact of socket design on global Rja
DUT Vehicle :                                   Socket Vehicle :
• Thermal enhanced HVQFN56                      • Clamshell,
  8x8mm                                         • Surface mount
• Laminate based
                                                • 10 different thermal designs
• 1.3W dissipation
• Always the same IC used
Board Vehicle :                                 HTOL chamber Vehicle :
• HTOL board 540x245mm,                         • 16 BIB position available,
• Full application mode simulated               • Board vehicle always loaded in
  (800MHz signals in),                            same position
• 16 sites available                            • Measure of Tj / Rja at minimum
• 1 site loaded (always the same)                 3 temperatures (only 1 reported
                                                  in this document)

   03/2012      Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                       18
Socket impact
Method used for simulation
                                                             Tambient
                                                                          Rca
•   Based on simplified thermal                                Tcase
    circuitry                                  DUT
                                                                          Rjc
                                                            Tjunction                      Qin
•   No self heating effect considered
                                        Tsignal pad              Rjs T              Rjp
•   Package estimation done for Rjc,                                   die pad

    Rjs, Rjp based on die/lid ratio = SOCKET
    0.67                                   Rsb                                         Rpb
                                               Signal pad                              Package pad
•   Chamber air flow unspecified but           to contact                                  to contact
                                               interface                                     interface
    considered as high value,
    estimation done for Rca, Rba               BOARD          Tboard′                Top of board to
                                                                                     contact / socket
                                                              Tboard         Rba            interface
•   For socket:                                                                    Bottom of board to
    – Rsb = Rth(pin) / nb of signal pin (56)                 Tambient               ambient interface
    – Rpb = Rth(pin) / nb of epad pin

    03/2012        Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                          19
Socket impact
Method used for Tj / Rja measurement on HTOL board
Measure of junction temperature performed in true HTOL condition thanks
to an embedded diode
•   1st step: calibration of the diode vs
    temperature with unbiased IC

Then for a given Ta
• 2nd step: heat up IC (power
  supplies ON) during 1hr

•   3rd step: measure diode and IC
    power dissipation. Calculate Tj and
    Rja


    03/2012        Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                          20
Socket impact
Socket / pin variations (1)




   03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                        21
Socket impact
Socket / pin variations (2)



              P-Pin                               S-Pin                               Z-Pin



   Rth = 2,080°C/W              Rth = 12,464 °C/W                    Rth = 1,100 °C/W

     pogos on              Thermal button on die                BART = heatsink on the
      die pad               pad (Rth = 9 °C/W)                   cover (Rth = 25°C/W)




   03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                        22
Socket impact
                          Different signal pin type
                                                                      •    Measurements confirm that thermal
                                                                           performance of B is worse than A
                                                                      •    This is due to the difference in pin
                                                                           performance
                                                                      •    For B, simulation is more conservative
                                                                           than actual
                                                        230

                                                                    A simulation     A measure
                                                        205
                                                                    B simulation     B measure
                            Tjunction Temperature, oC




                                                        180



 A              B                                       155


                                                        130


                                                        105


                                                         80
                                                              0,0   0,2        0,4   0,6         0,8   1,0   1,2   1,4
                                                                                     Device Power, W
P-Pin          S-Pin

     03/2012           Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                              23
Socket impact
                                                   Number of pins on the die pad
•                            Increasing the number of pins on the die
                             pad improves the thermal performance
•                            For C, simulation close to actual. Signal
                             path become negligible due to number
                             of P-pin on die pad
                           230

                                            B simulation       B measure
                           205
                                            C simulation       C measure
Tjunction Temperature, C
o




                           180


                           155
                                                                                                              B C           B C
                           130


                           105


                            80
                                 0,0        0,2        0,4      0,6        0,8      1,0      1,2       1,4
                                                                Device Power, W
                                                                                                              S-Pin           P-Pin

                                  03/2012              Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                                              24
Socket impact
          Different pin type for both signal & die pad
                                                                      •     Global thermal performance is
                                                                            influenced by the thermal characteristics
                                                                            of the pin chosen
                                                                      •     Variation between simulation and actual
                                                                            data but trend correct
                                                          230

                                                                      A simulation     A measure
                                                          205
                                                                      D simulation     D measure
                                                                      H simulation     H measure
                               Tjunction Temperature, C
                              o




                                                          180


                                                          155
 A          D       H
                                                          130


                                                          105


                                                           80
                                                                0,0   0,2        0,4   0,6         0,8   1,0   1,2   1,4
                                                                                       Device Power, W
P-Pin      S-Pin   Z-Pin
        03/2012         Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                               25
Socket impact
                                              Different pin structure for the die pad
•                            Thermal button improve global Rja
•                            But was not able to get all the gain
                             expected by thermal button (too few vias
                             between die pad and ground plane)

                            230

                                          A simulation           A measure
                            205
                                          E simulation           E measure
Tjunction Temperature, oC




                            180


                            155
                                                                                                                    A            E
                            130


                            105


                             80
                                  0,0         0,2    0,4          0,6        0,8     1,0       1,2       1,4
                                                                  Device Power, W
                                                                                                                  P-Pin    Thermal Button

                                    03/2012              Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                                                26
Socket impact
               Open-top vs Clamshell design
                                                                 •    Simulation sees no difference between
                                                                      clamshell and open top socket
                                                                 •    Actual data shows that open top is
                                                                      worse than clamshell

                                                    230

                                                                B simulation     B measure
                                                    205
                                                                I simulation     I measure
                        Tjunction Temperature, oC




                                                    180

Rjca is through
                                                    155
• package surface
   only with open top                               130

   socket                                           105

• by whole socket
                                                     80
   surface with                                           0,0   0,2        0,4   0,6         0,8   1,0   1,2   1,4

   clamshell                                                                     Device Power, W



    03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                         27
Socket impact
                                                               Integrated heatsink
• Even though thermally enhanced package
  is designed to dissipate heat through the
  thermal pad on the bottom, adding a
  heatsink improve Rjca thus global Rja
• This is confirmed by simulation and actual
                           150


                           140
                                         A simulation           A measure
                                         F simulation           F measure
                           130           G simulation           G measure
Tjunction Temperature, C
o




                           120


                           110                                                                                    A          F     G
                           100


                            90


                            80
                                 0,0         0,2    0,4          0,6        0,8     1,0       1,2      1,4
                                                                 Device Power, W
                                                                                                                P-Pin        Heatsink

                                   03/2012              Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                                                               28
Socket impact
             Cumulative impact of button & heatsink
                                                                       •     Using best performance Rjba (thermal
                                                                             button) and Rjca (heatsink) improves
                                                                             global Rja



                                                           150


                                                           140
                                                                       E simulation     E measure
                                                                       F simulation     F measure
                                                           130         J simulation     J measure
                                Tjunction Temperature, C
                               o




                                                           120

    E    J        F    J                                   110


                                                           100


                                                            90


                                                            80
                                                                 0,0   0,2        0,4   0,6         0,8   1,0   1,2   1,4
                                                                                        Device Power, W
Thermal Button    Heatsink
        03/2012         Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                               29
Socket impact
                                                                                          Simulation ranking
                                                                              220
                                                                                           I
                                                                              200
                                                                                           B
                                                                                           D
                                                                                           C
                                                                              180          A




                                                   Tjunction Temperature, C
                                                                                           H




                                                   o
                                                                                           G
                                                                              160          F
                                                                                           E
                                                                              140          J

                                                                              120


                                                                              100


                                                                               80
                                                                                    0,0        0,5         1,0   1,5
                                                 Related to                                    Device Power, W

                                                 pcb design
          Socket thermal design  Rsb, Rpb, Rca
03/2012      Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                    30
Socket impact
                                                                 And what about a “standard” socket based
                                                                 on package mechanical parameters only ?
                                                                                                         From D to
                                                                                                         “Standard”
                                                     220

                                                                    B simulation      B measure
•   B socket is the                                  200
                                                                    C simulation      C measure
    same as C with                                   180            D simulation      D measure
                          Tjunction Temperature, C
                          o




    less P-pins on die                               160

    pad                                                          Tj = 150°C
                                                     140
                                                                                     From C to B
•   “standard” would                                 120
    be the same as D
                                                     100
    with less S-pins on
    die pad                                           80
                                                           0,0      0,2        0,4    0,6         0,8     1,0    1,2   1,4
                                                                                       Device Power, W


     “Package Outline Drawing” is not enough for socket selection

     03/2012       Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                          31
Conclusion
•   DOE shows that simulations and actual data follow the same tendency.
    But amplitudes appear different due to incomplete/unknown information
    such as accurate design/package information or considering self
    heating of the contacts.

•   In fact, the real simulation « fine-tuning » is all in the details ie the more
    detailed the information which is considered (such as precise package
    structure, die/lid ratio, lid material, precise socket/pcb setup…) always
    improves the accuracy of the simulation data

•   Since device and chamber contribution in thermal performance can not
    be modified, socket thermal design becomes an increasingly important
    factor to consider and optimize the overall thermal performance (Rja) of
    the device-socket-board structure during an HTOL test.

•   But … even with an « optimal socket design » the benefit of this upfront
    accurate design will be lost if other aspects such as board design and
    population, chamber population and ventilation…are not taken into
    account by the lifetest engineers.
    03/2012        Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H
                                                                                          32

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Evaluation and Optimization of the Thermal Performance of a Socketed Device for an HTOL Application

  • 1. Evaluation and Optimization of the Thermal Performance of a Socketed Device for an HTOL Application Considerations in the selection of a socket for a plastic molded, thermal enhanced package Nathanaël Loiseau+, Marco Michi* and James Forster* + Presto Engineering, * WELLS-CTI 2012 BiTS Workshop March 4 - 7, 2012
  • 2. Introduction Today’s device: • More functionality • Higher frequency • More power / thermal dissipation • Smaller size DESIGN OFFICE Today’s HTOL: H.T.O.L. ! No, I don’t see that • From static to true application in my design specification environment simulation HTOL OFFICE • Higher frequency A.P.P.L.I.C.A.T.I.O.N. ! • Higher current No, I don’t see that in my reference • More power / thermal dissipation norm Thermal considerations of socket and test board become more important 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 2
  • 3. Content • Technology challenge • Environment challenge • Thermal resistance definition • DUT impact • PCB impact • Chamber impact • Self heating impact • Socket impact (DOE) • Conclusion Definition: HTOL High Temperature Operating Life Typically 1000 hours at Tambient 125 deg C or Tjunction 150°C. But other times and temps are performed 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 3
  • 4. Technology challenge Package • Smaller, integration of several functions, dies • Power dissipation concentrated • Smaller surface for thermal exchange Advance process • Smaller size, higher frequency • IC Voltage ↘  IC current ↗  Current flow ↗  Socket & board self heating ↗ SOURCE: Semiconductor Industry Association. The International Technology Roadmap for Customer willingness Semiconductors, 2009 Edition. SEMATECH, Austin, TX, 2009. • Static HTOL does not always reveal relevant failure mechanism • Dynamic HTOL closer to real life conditions 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 4
  • 5. Environment challenge Principle for HTOL Tjunction DUT = Ta + Rja x PDISS Chamber « Ta » • Ta is regulated locally or globally in order to Tjunction other Tjunction DUT have the correct Tjunction DUT component s Ta must be compatible with Tboard Tsocket • Other elements temperature (board, socket, components) • Chamber specification (ex: Tamin = Troom + 30°C if no cooling capability) 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 5
  • 6. Thermal resistance definition Thermal resistance for heat transfer  Electrical resistance for charge transfer Thermal Electrical Important Equation Important Equation R1-2 = T1 - T2 R1-2 = V1 - V2 Heat/t Charge/t Thermal Electrical resistance - resistance + HOT COLD LOW - + HIGH T1 T2 V1 - + V2 - + HEAT Charge(-) 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 6
  • 7. Thermal resistance definition Thermal resistance is Thermal resistance is not • The characterization of heat • A universal standard transfer between 2 points – JESD 51  17 documents – MIL-STD-750E 13 methods • The key point to get thermal equilibrium and Tj under control • A standard value available in IC data  functionality & reliability of the sheet or package specification IC Rjca 1/Rja = 1/Rjca + 1/Rjba Tj Ta Rjba 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 7
  • 8. Thermal resistance definition Soldered device vs Socketed device • Thermal resistance is typically given in device datasheet for the device soldered to a board in a certain environment • Thermal resistance of a socketed device is expected to be higher than one soldered to a PCB in same environment. Mostly unknown. Heat dissipation path: • Die – Case – Ambient • Die – IC Pads – Board – Ambient Heat dissipation path: • Die – Case – Socket – Ambient • Die – IC Pads – Socket – Board – Ambient 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 8
  • 9. Thermal resistance definition Thermal resistance circuitry for a device in a socket Tambient Rca Temp of ambient Ta DUT Tcase Rjc Temp of junction Tj Tjunction Temp of case Tc Qin Temp of pad Tp Tsignal pad Rjs T Rjp die pad SOCKET Rsb Rpb Signal pad Package pad Temp of contact Tct to contact to contact Temp of the interface interface board, PCB Tb Tboard′ Top of board to Temp of pad Tp BOARD Rbb contact / socket Tboard interface Temp of the board Rba Bottom of board to under the socket, Tb’ Tambient ambient interface 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 9
  • 10. DUT impact Thermally enhanced package = package with a pad dedicated for • Thermal conduction to ground (always) • Electrical connection to ground (sometimes) Package configuration Leadframe based package Laminate based package = die attached on metal plate = die attached on a pcb 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 10
  • 11. DUT impact Die assembly Stacked dies + Wire bonding Stacked dies + Flip-chip Die / lid ratio 7mm Measure done on 2 socketed device (same package, same HTOL board, difference on die size only) Device Package Die pad Die Rja A 2.7x2.5mm 31°C/W 7x7mm 5.1x5.1 mm 7mm B 3.3x2.5mm 22°C/W Chip designer choices  Rjc, Rjs, Rjp Often unknown values when designing an HTOL setup 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 11
  • 12. PCB impact Example of Rja HVQFN56 soldered on application boards in same environment Application board #1 Application board #2 PCB PCB Nbr of PCB size Nbr of PCB size thickness thickness layer (mm) layer (mm) (mm) (mm) 1.17 10 30x60 1.43 10 35x80 Rja = 36.4 °C/W Rja = 31.6 °C/W Material, size, thickness, stack up  Rbb, Rba In HTOL, depend of chamber size and DUT requirements 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 12
  • 13. Chamber impact From previous BiTS presentations, HTOL chamber often seen like: • A simple box • A “tunnel” between BIB’s • “Fresh” air at one side • Inconsistent air flow between boards • Extraction of heat capability For HTOL, JESD22-A108D: The environmental chamber shall be capable of maintaining the specified temperature within a tolerance of ± 5 °C throughout the chamber while parts are loaded and unpowered. For test cost reduction, most often: • Maximize the number of BIB’s in chamber • Maximize the number of site per BIB 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 13
  • 14. Chamber impact Experimental results with a 1.3W DUT • Chamber and BIB populated in • Air flow modified on a BIB position order to keep maximum air flow by adding a « box » on the socket around sockets Ta = Ta = Ta = Ta = 85.9°C 86.0°C 86.0°C 85.6°C Tj = Tj = Tj = Tj = 146.9°C 146.9°C 149.3°C 147.6°C Chamber & Life-test Engineer choices  Rba, Rca 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 14
  • 15. Self heating impact With Joule effect, materials heat up according to I² x R For PCB Max current in internal PCB trace 4 30°C elevation - 35µm Copper 3,5 10°C elevation - 35µm Copper 3 30°C elevation - 17,5µm Copper 2,5 10°C elevation - 17,5µm Copper I (Amp) 2 1,5 For socket contacts Current Carrying Capacity at Ambient 1 150 140 0,5 130 Contactor Temperature, °C 120 Derated 25°C 0 110 0 500 1000 1500 2000 2500 100 Trace larger (µm) Derated 85°C 90 80 70 Derated 125°C 60 50 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 Individual Contactor Current, Amps 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 15
  • 16. Self heating impact If the contacts or board traces Tambient generate heat, the heat transfer Rca from the DUT to ambient will Tcase change DUT Rjc Tjunction Qin Tsignal pad Rjs T Rjp die pad SOCKET Rsb Rpb Qpin Qpin Signal pad Package pad to contact to contact interface interface New contributors Tboard′ Top of board to BOARD Rbb contact / socket Qboard Tboard Qboard interface Rba Bottom of board to Tambient ambient interface 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 16
  • 17. Self heating impact Measure on HTOL board  also illustrates mutual heating between sites • with 1.3W DUT Junction self heating with 1.3W at Ta = 85°C • 780mA per DUT 64 49,5 • "1" used as Tj ref 49 63 Self heating 48,5 10 11 12 13 + Tj-Ta 48 62 Rth(j-a) mutual heating Rth(j-a) (°C/W) Tj-Ta (°C) 47,5 2 6 3 14 61 47 Self heating 46,5 9 1 7 15 60 only 46 45,5 59 5 8 4 16 45 58 44,5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Nb of site loaded Self heating, mutual heating  Rsb, Rpb, Rbb, Rba 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 17
  • 18. Socket impact DOE in order to evaluate impact of socket design on global Rja DUT Vehicle : Socket Vehicle : • Thermal enhanced HVQFN56 • Clamshell, 8x8mm • Surface mount • Laminate based • 10 different thermal designs • 1.3W dissipation • Always the same IC used Board Vehicle : HTOL chamber Vehicle : • HTOL board 540x245mm, • 16 BIB position available, • Full application mode simulated • Board vehicle always loaded in (800MHz signals in), same position • 16 sites available • Measure of Tj / Rja at minimum • 1 site loaded (always the same) 3 temperatures (only 1 reported in this document) 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 18
  • 19. Socket impact Method used for simulation Tambient Rca • Based on simplified thermal Tcase circuitry DUT Rjc Tjunction Qin • No self heating effect considered Tsignal pad Rjs T Rjp • Package estimation done for Rjc, die pad Rjs, Rjp based on die/lid ratio = SOCKET 0.67 Rsb Rpb Signal pad Package pad • Chamber air flow unspecified but to contact to contact interface interface considered as high value, estimation done for Rca, Rba BOARD Tboard′ Top of board to contact / socket Tboard Rba interface • For socket: Bottom of board to – Rsb = Rth(pin) / nb of signal pin (56) Tambient ambient interface – Rpb = Rth(pin) / nb of epad pin 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 19
  • 20. Socket impact Method used for Tj / Rja measurement on HTOL board Measure of junction temperature performed in true HTOL condition thanks to an embedded diode • 1st step: calibration of the diode vs temperature with unbiased IC Then for a given Ta • 2nd step: heat up IC (power supplies ON) during 1hr • 3rd step: measure diode and IC power dissipation. Calculate Tj and Rja 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 20
  • 21. Socket impact Socket / pin variations (1) 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 21
  • 22. Socket impact Socket / pin variations (2) P-Pin S-Pin Z-Pin Rth = 2,080°C/W Rth = 12,464 °C/W Rth = 1,100 °C/W pogos on Thermal button on die BART = heatsink on the die pad pad (Rth = 9 °C/W) cover (Rth = 25°C/W) 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 22
  • 23. Socket impact Different signal pin type • Measurements confirm that thermal performance of B is worse than A • This is due to the difference in pin performance • For B, simulation is more conservative than actual 230 A simulation A measure 205 B simulation B measure Tjunction Temperature, oC 180 A B 155 130 105 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W P-Pin S-Pin 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 23
  • 24. Socket impact Number of pins on the die pad • Increasing the number of pins on the die pad improves the thermal performance • For C, simulation close to actual. Signal path become negligible due to number of P-pin on die pad 230 B simulation B measure 205 C simulation C measure Tjunction Temperature, C o 180 155 B C B C 130 105 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W S-Pin P-Pin 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 24
  • 25. Socket impact Different pin type for both signal & die pad • Global thermal performance is influenced by the thermal characteristics of the pin chosen • Variation between simulation and actual data but trend correct 230 A simulation A measure 205 D simulation D measure H simulation H measure Tjunction Temperature, C o 180 155 A D H 130 105 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W P-Pin S-Pin Z-Pin 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 25
  • 26. Socket impact Different pin structure for the die pad • Thermal button improve global Rja • But was not able to get all the gain expected by thermal button (too few vias between die pad and ground plane) 230 A simulation A measure 205 E simulation E measure Tjunction Temperature, oC 180 155 A E 130 105 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W P-Pin Thermal Button 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 26
  • 27. Socket impact Open-top vs Clamshell design • Simulation sees no difference between clamshell and open top socket • Actual data shows that open top is worse than clamshell 230 B simulation B measure 205 I simulation I measure Tjunction Temperature, oC 180 Rjca is through 155 • package surface only with open top 130 socket 105 • by whole socket 80 surface with 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 clamshell Device Power, W 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 27
  • 28. Socket impact Integrated heatsink • Even though thermally enhanced package is designed to dissipate heat through the thermal pad on the bottom, adding a heatsink improve Rjca thus global Rja • This is confirmed by simulation and actual 150 140 A simulation A measure F simulation F measure 130 G simulation G measure Tjunction Temperature, C o 120 110 A F G 100 90 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W P-Pin Heatsink 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 28
  • 29. Socket impact Cumulative impact of button & heatsink • Using best performance Rjba (thermal button) and Rjca (heatsink) improves global Rja 150 140 E simulation E measure F simulation F measure 130 J simulation J measure Tjunction Temperature, C o 120 E J F J 110 100 90 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W Thermal Button Heatsink 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 29
  • 30. Socket impact Simulation ranking 220 I 200 B D C 180 A Tjunction Temperature, C H o G 160 F E 140 J 120 100 80 0,0 0,5 1,0 1,5 Related to Device Power, W pcb design Socket thermal design  Rsb, Rpb, Rca 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 30
  • 31. Socket impact And what about a “standard” socket based on package mechanical parameters only ? From D to “Standard” 220 B simulation B measure • B socket is the 200 C simulation C measure same as C with 180 D simulation D measure Tjunction Temperature, C o less P-pins on die 160 pad Tj = 150°C 140 From C to B • “standard” would 120 be the same as D 100 with less S-pins on die pad 80 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 Device Power, W “Package Outline Drawing” is not enough for socket selection 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 31
  • 32. Conclusion • DOE shows that simulations and actual data follow the same tendency. But amplitudes appear different due to incomplete/unknown information such as accurate design/package information or considering self heating of the contacts. • In fact, the real simulation « fine-tuning » is all in the details ie the more detailed the information which is considered (such as precise package structure, die/lid ratio, lid material, precise socket/pcb setup…) always improves the accuracy of the simulation data • Since device and chamber contribution in thermal performance can not be modified, socket thermal design becomes an increasingly important factor to consider and optimize the overall thermal performance (Rja) of the device-socket-board structure during an HTOL test. • But … even with an « optimal socket design » the benefit of this upfront accurate design will be lost if other aspects such as board design and population, chamber population and ventilation…are not taken into account by the lifetest engineers. 03/2012 Evaluation and Optimization of the Thermal Performance of a Socketed Device for an H 32