![IJVDT (2016) 1-6 © JournalsPub 2016. All Rights Reserved Page 1
International Journal of VLSI Design & Technology
Vol. 2: Issue 2
www.journalspub.com
Energy Efficient Low-Voltage Dynamic Comparator
S.K. Jain*
, C. Periasamy
Malviya National Institute of Technology, Jaipur, India
ABSTRACT
The blueprint of a comparator that is doubly tailed and with minimal voltage post amplifier
and stage of latching are explained deeply in this document. The main concern of the design
is in the comparator of traditional modes those are doubly tailed. The circuitry which is
traditionally doubly tailed is manipulated as per the need of minimal power and enhanced
operation in voltages with very minutes supply. In the technique of CMOS of 45 nm the
outcomes of simulation ensures the outcomes of assessments. It is also presented that by
minimizing the extent of channel, the absorption of power will also be deduced. The voltage
of 1.2 V that is furnished is absorbed as 4.11 μW in the comparator suggested here while it is
39.05 and 136.55 μW in the comparators those are currently in use.
Keywords: conventional dynamic comparator, double tail comparator, proposed dynamic
comparator, low power, fast operation
INTRODUCTION
Comparators are constituted as the main
formulation cells of an ADC. The ADCs
which possess a greater speed like the
flash tends for greater frequency, minimal
power along the area of chip. The
comparators that have a greater speed that
are deployed in methodology of UDSM-
CMOS face paucity of voltage when the
voltage thresholds are taken into account
in the appliances which had not been
deployed at a same level of furnished
voltage in the latest CMOS. So in the issue
of shortage in voltage, to form a
comparator that possesses a greater speed
is much more exigent. In order to
recompense the deducing voltage to attain
more speed some bigger transistors are
deployed which eventually demand for
greater section of die & power. The
outcomes obtained should be in the same
mode of input even a minimal voltage is
supplied in the structures of ADC that has
greater speed. There are several
methodologies like the boosting, the
transistors are driven by body, design of
mode of current and by making use of
process of double oxide which can manage
the supply of greater voltages which is
been deployed to attain the issues of
minimal voltages. The bootstrapping and
boosting are two methodologies which are
constituted in furnishing the supply,
voltage of clock and reference which will
be defined for a range of input and issues
of switching. These methodologies that put
a real impact, but they face some problems
in their accuracy in CMOS-USDM
terminologies. The methodologies that are
adopted by Blalock, they eliminate the
voltage of threshold like MOSFET driven
of body as an appliance that is of type of
exhaustion. A subsidiary modulator is
suggested on the terminologies which 1 bit
quantized.[1–3]
Apart from its superiorities
the transistors which are driven by body
bear some minute conductance in trans in
contrast to the {counterparts} in the
procedural {fabrication} like in all the
transistors which are constituted on the](https://image.slidesharecdn.com/internationaljournalofvlsidesignandtechnologyvol2issue2-170214065023/85/International-Journal-of-VLSI-Design-and-Technology-Vol-2-Issue-2-9-320.jpg)
![IJVDT (2016) 7-10 © JournalsPub 2016. All Rights Reserved Page 7
International Journal of VLSI Design and Technology
Vol. 2: Issue 2
www.journalspub.com
Design and Analysis of 8T Full Adder Using 77 nm Technology
M. Agnihotri1
*, D. Bichwe2
1
Department of Electronics and Communication Engineering, Prashanti College of Engineering and
Technology, Ujjain, MP, India
2
Department of Electronics and Communication Engineering, Guru Nanak Institute of Engineering and
Technology, Nagpur, India
ABSTRACT
The 8T full adder design has been proposed in this paper. The proposed design is based on
77nm technology. The power consumption by this design is reduced due to less number of
transistor count and efficient area is also get reduced by this proposed design. The design is
simulated with the help of Tanner tool. The simulation results are compared with the
conventional full adder design in terms of power consumption, area, time delay and power
delay product parameters.
Keywords: carry, full adder, 77nm technology, sum, transistor count
INTRODUCTION
Research efforts in the field of low power
VLSI (very large-scale integration)
systems have been increased due to
exponential growth of portable electronic
devices like laptops; audio/video based
multimedia and cellular communication
devices.[1]
With the increase in number of
transistors on chip, power consumption of
the VLSI systems is also increasing which
further increase to run time failures and
reliability problems. The packaging and
the cooling mechanism becomes more
costly with excessive power consumption.
Low power consumption is one of major
design criteria for IC designers at all levels
of design along with the delay and area
considerations. Proper functionality of
electronic device at low supply voltage is
also important consideration. In this paper,
we proposes a full adder design using less
number of transistor is to reduce power
consumption, less area, less power delay
and less power delay product.
PREVIOUS WORK
The full adder is basically 1 bit adder used
to perform arithmetic addition. It contains
three input bits like A, B, Cin and two
output bits Sum and Carry. The Boolean
expression for the Sum and Carry
functions is as shown below.
Sum = (A B) Cin
Cout = A.B + Cin (AB)
The conventional full adder circuit
contains much number of transistors. The
PMOS transistor acts as Pull up and
NMOS transistor acts as Pull down
transistor. It is very robust design but due
to more power consumption and more
number of transistor count, it not mainly
used in digital design. Figure 1 shows the
conventional transistor.
There are many proposed design for full
adder circuit. In recent years the different
types of full adder using various logic
styles have been proposed. Standard
CMOS 28 transistor adder having pull up](https://image.slidesharecdn.com/internationaljournalofvlsidesignandtechnologyvol2issue2-170214065023/85/International-Journal-of-VLSI-Design-and-Technology-Vol-2-Issue-2-10-320.jpg)
![IJVDT (2016) 11-17 © JournalsPub 2016. All Rights Reserved Page 11
International Journal of VLSI Design and Technology
Vol. 2: Issue 2
www.journalspub.com
Temperature Dependent Performance Analysis of SWCNT
Bundles as VLSI Interconnects
Shilpa Agrawal*, Ankit Kumar, Mayank Kumar Rai, Abhishek Shrivastava
Department of Electronics and Communication Engineering, Thapar University, Patiala, India
ABSTRACT
Impact of temperature on delay in single walled carbon nanotube (SWCNT) bundle
interconnects has been analyzed. Temperature-dependent circuit model for metallic SWCNT
bundle is developed. The obtained results are matched with currently used copper
interconnects at 22 nm technology node. It is seen that SWCNT bundle interconnects are of
lower delay than copper interconnect with rise in temperature from 300K to 450K.
Keywords: carbon nanotube, delay analysis, interconnects, single walled carbon nanotube
INTRODUCTION
Due to scaling in die size, performance of
the copper based interconnects for global
signaling get debased due to the decrease
in conductivity of copper. In deep
submicron level, grain boundary scattering
and electron migration dominates
effectively.[1]
Material research lies out
that carbon nanotube (CNT) is a potential
candidate. CNTs are graphene tubes,
having diameter in range of nanometer,
formed by folding up graphene sheets of
carbon atoms with a proper chirality.[2]
Interconnects configured of these medium
are executed in an identical size scale as
the copper wires. CNTs have significant
lower resistivity than copper because of
the property of CNT that it has high
electron mean free path than the copper.[3–
5]
Moreover a CNT wire can accommodate
a current density of 1010 A/cm2 or higher
value without any destruction.[6]
On the basis of structure CNTs are divided
into two groups: single-wall carbon
nanotubes (SWCNTs) and multi-wall
carbon tubes (MWCNTs).SWCNTs are
made up of single thin wall of graphene
sheet while MWCNTs are made up of
several concentric shells. On the basis of
conductivity CNTs are divided into two
groups: semiconducting CNTS (sCNTS)
and metallic CNTs (mCNTs) depending on
their chirality. Semiconducting CNTs are
used to form transistors whereas metallic
CNTs are used as interconnects.
Single tube of SWCNT has large
resistance due to which more than one
SWCNT, called as SWCNT bundle, are
combined parallel. By using SWCNT
Bundles, overall resistance is reduced and
it entitle CNT interconnect to be more
appropriate for copper interconnects at
advanced VLSI technology nodes.
The main objective of this study is to
develop the impedance parameters of
SWCNT bundles based interconnect as a
function of temperature.
This paper analyses the effect of
temperature variation on delay on SWCNT
bundle interconnect.](https://image.slidesharecdn.com/internationaljournalofvlsidesignandtechnologyvol2issue2-170214065023/85/International-Journal-of-VLSI-Design-and-Technology-Vol-2-Issue-2-11-320.jpg)
![IJVDT (2016) 18-25 © JournalsPub 2016. All Rights Reserved Page 18
International Journal of VLSI Design and Technology
Vol. 2: Issue 2
www.journalspub.com
Multilevel CMOS LDO-Voltage Circuit With Bi-CMOS LDO
With and Without Amplifier
Kamlesh Sharma1
, Gajendra Sujediya2
, Abdul Naim Khan3*
1,2
Rajasthan Institute of Engineering & Technology, Jaipur, India
3
Jaipur National University, Jaipur, India
ABSTRACT
An amplifier is a device that is use to amplify the signal strength. There are lots of amplifiers
that can do other task besides amplifying. An amplifier is basically increasing the power level
of signals. We can use this principal to make building block of radio system. The signals that
we actually amplify in radio system are not necessarily sine wave, but sometimes they are.
Here we are amplifying sine wave of AC voltage or current. In this paper, the purpose is on
setting up a CMOS LDO (Low Drop Out) voltage circuit that can deliver significant voltage
drop & regulated voltage at multi-level ports that can enable SOC or NOC which have only
single power supply along with single power distribution circuit.
Keywords: CMOS, low dropout, NoC, SoC, voltage regulator
INTRODUCTION
Complementary Metal Oxide
Semiconductor (CMOS) is the
semiconductor technology used in the
transistors that are manufactured in to
most of today's computer microchips.
Semiconductors are made of silicon and
germanium, materials which "in some
way" conduct electricity, but not much
more.[1]
LDOs (Low dropout regulators)
are a simple inexpensive way to regulate
an output voltage that is to be powered
from a higher voltage input. They are easy
to design with and use. For most of the
applications, the parameters in an LDO
(Low dropout regulators) datasheet are
usually very easy to understand. Although,
the other applications require the designer
to study the datasheet more closely to
check whether or not the LDO is suitable
for the specific circuit conditions.[2]
Unfortunately, datasheets can’t present all
the parameters under all possible operating
conditions. The designer must interpret
and extrapolate the obtained information to
check the performance under non-
specified conditions.
LITERATURE REVIEW
In this paper, a CMOS without capacitor
LDO controller, which utilizing an
unobtrusive inclination circuit and a huge
number rate upgrade circuit, is planned.
These papers introduced an approach to
uproot the substantial outside capacitor,
yet these sans capacitor LDO controllers
experience the ill effects of unavoidable
tradeoffs between the precision and
criticism security.[3]
A low voltage, low
dropout (LDO) controller with an over
current redesign circuit is proposed in this
paper. By shaft zero following recurrence
remuneration; it can accomplish security
without ESR. It gives an over current sign
with hysteretic capacity. It comprises of a
voltage mention, a PMOS pass component,
a mistake intensifier in input design used
to initiative the pass component, security
circuits and stacking components.[4]
This
paper gives an outline of dependability](https://image.slidesharecdn.com/internationaljournalofvlsidesignandtechnologyvol2issue2-170214065023/85/International-Journal-of-VLSI-Design-and-Technology-Vol-2-Issue-2-12-320.jpg)
![IJVDT (2016) 26-29 © JournalsPub 2016. All Rights Reserved Page 26
International Journal of VLSI Design and Technology
Vol. 2: Issue 2
www.journalspub.com
Comparative Study of a 32 Bit Vedic Multiplier With a
Conventional Binary Multiplier
Rohan Muley*, Amrita Tuteja
MIT, Ujjain, Madhya Pradesh, India
ABSTRACT
Multiplier plays a very important role in digital signal processing systems. To achieve high
speed operation, Vedic method has been adopted in VLSI technology. Multipliers using vedic
mathematics produces high evaluation results in terms of speed and device utilization. The
aim of this work is to design digital multipliers based on the idea of Vedic mathematics. In
order to implement a digital multiplier, Urdhva-tiryakbyham sutras of Vedic mathematics are
used to develop vertical and cross wise operations. After all these are digital multiplier, so
that they are implemented on FPGA board and tested through the 8 LED (s) in FPGA (Nexys
3). An implemented 32-bit Vedic multiplier has been simulated in Xilinx ISE 13.4 and
compared with a 32-bit binary multiplier.
Keywords: binary multiplier, DSP, vedic multiplier, VLSI
INTRODUCTION
In today's era more emphasis is given on
the signal processing applications in VLSI.
Since last two decades, work on Multiply
and Accumulate (MAC) have been in
order to improve the multiplication
techniques. But before to improve the
multiplication technique need to focus on
why multiplication is important factor in
arithmetic operations and what is this.
Multiplication is an important basic
function in arithmetic operations.
Multiplication-based operations such as
Multiply and Accumulate(MAC) and inner
product are among some of the repeatedly
used Computation- Intensive Arithmetic
Functions(CIAF) currently designed in
many Digital Signal Processing (DSP)
applications such as convolution, Fast
Fourier Transform (FFT), filtering and in
microprocessors in its arithmetic and logic
unit [1]. Since multiplication dominates
the execution time of many DSP
algorithms, so there is a need of high speed
multiplier. When we talk of multiplication
the first thing that strikes is
“Mathematics”.
Researchers prefer the ancient
methodology for any mathematical
application where sutras are used i.e.
“Vedic Mathematics.” Vedic Mathematics
is based on 16 sutras (aphorisms) namely
(Anurupye) Shunyamanyat, Chalana-
Kalanabyham, Ekadhikina Purvena,
Ekanyunena Purvena, Gunakasamuchyah,
Gunitasamuchyah, Nikhilam
Navatashcaramam Dashatahm,
Paraavartya Yojayet, Puranapuranabyham,
Sankalanavyavakalanabhyam,
Shesanyankena Charamena,
ShunyamSaamyasamuccaye,
Sopaantyadvayamantyam,
Urdhvatiryakbyham, Vyashtisamanstih
and Yaavadunam.[2]
Each of these sutras is used for specific
application, for example Nikhilam sutra is](https://image.slidesharecdn.com/internationaljournalofvlsidesignandtechnologyvol2issue2-170214065023/85/International-Journal-of-VLSI-Design-and-Technology-Vol-2-Issue-2-13-320.jpg)
International Journal of VLSI Design and Technology (Vol 2 Issue 2)
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- 4. International Journal of VLSI Design and Technology International Journal of VLSI Design and Technology is a comprehensive journal that covers all aspects of VLSI technologies and their integration into recent technologies that are the focus of ongoing research. Journal has a wider scope including all major advancement in the technology and design that are related to VLSI.Allarticlespresentedherearepeer-reviewedand areofgood quality. Focus and Scope oftheJournal CMOS technologies Basic MOS models, spice models Frequency response stability and noise issues in amplifiers CMOS analog blocks: current sources and voltage references Differential amplifier op-amp and ota design Frequency synthesizers and phased lock-loop Non-linear analog blocks: comparators, charged-pump circuits and multipliers Data converters Analog interconnects and analog testing and layout 12 low voltage and low power analog Electronic design automation International Journal of VLSI Design and Technology is published twice a year (bi-annual) in India by JournalsPub is an imprint of Dhruv Infosystems Pvt. Ltd. The outlooks stated in the articles do not essentially reflect of the publisher. The publisher does not endorse the quality or value of the advertised/sponsored products described therein. Please consult full prescribing information before issuing aprescriptionfor anyproductsmentionedinthispublication. No part of this publication may be reproduced, stored in retrieval or transmitted in any form without written permissiontothepublisher. To cite any of the material contained in this journal, in English or translation, please use the full English reference at the beginning of each article. To reuse any of the material, please contact JournalsPub (info@journalspub.com).
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- 6. EDITORIAL BOARD MEMBERS Dr. Angsuman Sarkar, Kalyani Govt. Engg. College, Kalyani, India Dr. Swapnadip De, Assistant Professor, Department of Electronics and Communication Engineering Meghnad Saha Institute of Technology, India Prof.Dr. Ramakrishnan S, Dr.Mahalingam College of Engineering & Technology, India Dr. Michael Loong Peng Tan Universiti Teknologi Malaysia (UTM), Malaysia Dr. Ram Mohan Mehra Professor, Department of Electronic Science, University of Delhi South Campus India Professor J N Roy IIT-Kharagpur, India Balakrishnan Govindan Nair Kollamala Principal, College of Engineering, Munnar, India Dr. Huang Mingzhi Associate Professor, Department of Water Resources and Environment, Sun Yat-sen University, China Dr. V. Balaji Bahir Dar University,Bahir Dar, Ethiopia, South Africa Mr. Vijay R Wadhankar Rtmnu University, India Mr. Mayank Chakraverty Member of IBM Semiconductor Research & Development Center, India Shipra Suman Universiti Teknologi PETRONAS, Malaysia Dr. Seyed Feraydune Kashefi Khavaran Higher-education Institute, Iran Dr. Saeid Zoghi Department of Applied Chemistry, Shahrood Azad University, Shahrood, Iran Nitin Kathuria ECE, ITS Engg College, G. Noida, Uttar Pradesh, India Dr. Santosh Kumar Agrahari Poornima University, Jaipur, India
- 7. From the Editor's Desk Dear Readers, We would like to present, with great pleasure, the inaugural volume of a new scholarly journal, International Journal of VLSI Design and Technology. This journal is part of the VLSI Design and Technology, and is devoted to the scope of present Electronics issues, from theoretical aspects to application-dependent studies and the validation of emerging technologies. This new journal was planned and established to represent the growing needs of International Journal of VLSI Design and Technology as an emerging and increasingly vital field, now widely recognized as an integral part of scientific and technical investigations. Its mission is to become a voice of the Electronics and TelecommunicationEngineeringcommunity,addressing researchersandpractitionersinthisarea. The core vision of International Journal of VLSI Design and Technology in JournalsPub is to propagate novel awareness and know-how for the profit of mankind ranging from the academic and professional research societies to industry practitioners in a range of topics in Electronics and Telecommunication Engineering in general. Journals Pub acts as a pathfinder for the scientific community to published their papers atexcellently,well-time&successfully. International Journal of VLSI Design and Technology focuses on original high-quality research in the realm of CMOS technologies, Basic MOS Models, SPICE Models, Frequency response, stability and Noise issues in amplifiers, CMOS analog blocks: Current Sources and Voltage references, Differential amplifier, OPAMP and OTA design, Frequency Synthesizers and Phased lock-loop, Non-linear analog blocks: Comparators, Charged-pump circuits and Multipliers, Data converters, Analog Interconnects and Analog Testing and Layout,12 Low voltageand Low powerAnalog,Electronicdesignautomation. The Journal is intended as a forum for practitioners and researchers to share the techniques of Electronics and TelecommunicationEngineeringandsolutionsinthearea. Many scientists and researchers have contributed to the creation and the success of the Electronics and Telecommunication Engineering community. We are very thankful to everybody within that community who supported the idea of creating an innovative platform. We are certain that this issue will be followed by many others, reporting new developments in the field of VLSI Design and Technology. This issue would not have been possible without the great support of the Editorial Board members, and we would like to express our sincere thanks to all of them. We would also like to express our gratitude to the editorial staff of JournalsPub, who supported us at every stage of the project. It is our hope that this fine collection of articles will be a valuable resource for Electronics and Telecommunication Engineering readers and will stimulate further researchintothevibrantareaofElectronicsand TelecommunicationEngineering. PuneetMehrotra ManagingDirector
- 8. 1. Energy Efficient Low-Voltage Dynamic Comparator S.K. Jain, C. Periasamy 1 2. Design and Analysis of 8T Full Adder Using 77 nm Technology M. Agnihotri, D. Bichwe 7 3. Temperature Dependent Performance Analysis of SWCNT Bundles as VLSI Interconnects Shilpa Agrawal, Ankit Kumar, Mayank Kumar Rai, Abhishek Shrivastava 11 4. Multilevel CMOS LDO-Voltage Circuit With Bi-CMOS LDO With and Without Amplifier Kamlesh Sharma, Gajendra Sujediya, Abdul Naim Khan 18 5. Comparative Study of a 32 Bit Vedic Multiplier With a Conventional Binary Multiplier Rohan Muley, Amrita Tuteja 26 Contents
- 9. IJVDT (2016) 1-6 © JournalsPub 2016. All Rights Reserved Page 1 International Journal of VLSI Design & Technology Vol. 2: Issue 2 www.journalspub.com Energy Efficient Low-Voltage Dynamic Comparator S.K. Jain* , C. Periasamy Malviya National Institute of Technology, Jaipur, India ABSTRACT The blueprint of a comparator that is doubly tailed and with minimal voltage post amplifier and stage of latching are explained deeply in this document. The main concern of the design is in the comparator of traditional modes those are doubly tailed. The circuitry which is traditionally doubly tailed is manipulated as per the need of minimal power and enhanced operation in voltages with very minutes supply. In the technique of CMOS of 45 nm the outcomes of simulation ensures the outcomes of assessments. It is also presented that by minimizing the extent of channel, the absorption of power will also be deduced. The voltage of 1.2 V that is furnished is absorbed as 4.11 μW in the comparator suggested here while it is 39.05 and 136.55 μW in the comparators those are currently in use. Keywords: conventional dynamic comparator, double tail comparator, proposed dynamic comparator, low power, fast operation INTRODUCTION Comparators are constituted as the main formulation cells of an ADC. The ADCs which possess a greater speed like the flash tends for greater frequency, minimal power along the area of chip. The comparators that have a greater speed that are deployed in methodology of UDSM- CMOS face paucity of voltage when the voltage thresholds are taken into account in the appliances which had not been deployed at a same level of furnished voltage in the latest CMOS. So in the issue of shortage in voltage, to form a comparator that possesses a greater speed is much more exigent. In order to recompense the deducing voltage to attain more speed some bigger transistors are deployed which eventually demand for greater section of die & power. The outcomes obtained should be in the same mode of input even a minimal voltage is supplied in the structures of ADC that has greater speed. There are several methodologies like the boosting, the transistors are driven by body, design of mode of current and by making use of process of double oxide which can manage the supply of greater voltages which is been deployed to attain the issues of minimal voltages. The bootstrapping and boosting are two methodologies which are constituted in furnishing the supply, voltage of clock and reference which will be defined for a range of input and issues of switching. These methodologies that put a real impact, but they face some problems in their accuracy in CMOS-USDM terminologies. The methodologies that are adopted by Blalock, they eliminate the voltage of threshold like MOSFET driven of body as an appliance that is of type of exhaustion. A subsidiary modulator is suggested on the terminologies which 1 bit quantized.[1–3] Apart from its superiorities the transistors which are driven by body bear some minute conductance in trans in contrast to the {counterparts} in the procedural {fabrication} like in all the transistors which are constituted on the
- 10. IJVDT (2016) 7-10 © JournalsPub 2016. All Rights Reserved Page 7 International Journal of VLSI Design and Technology Vol. 2: Issue 2 www.journalspub.com Design and Analysis of 8T Full Adder Using 77 nm Technology M. Agnihotri1 *, D. Bichwe2 1 Department of Electronics and Communication Engineering, Prashanti College of Engineering and Technology, Ujjain, MP, India 2 Department of Electronics and Communication Engineering, Guru Nanak Institute of Engineering and Technology, Nagpur, India ABSTRACT The 8T full adder design has been proposed in this paper. The proposed design is based on 77nm technology. The power consumption by this design is reduced due to less number of transistor count and efficient area is also get reduced by this proposed design. The design is simulated with the help of Tanner tool. The simulation results are compared with the conventional full adder design in terms of power consumption, area, time delay and power delay product parameters. Keywords: carry, full adder, 77nm technology, sum, transistor count INTRODUCTION Research efforts in the field of low power VLSI (very large-scale integration) systems have been increased due to exponential growth of portable electronic devices like laptops; audio/video based multimedia and cellular communication devices.[1] With the increase in number of transistors on chip, power consumption of the VLSI systems is also increasing which further increase to run time failures and reliability problems. The packaging and the cooling mechanism becomes more costly with excessive power consumption. Low power consumption is one of major design criteria for IC designers at all levels of design along with the delay and area considerations. Proper functionality of electronic device at low supply voltage is also important consideration. In this paper, we proposes a full adder design using less number of transistor is to reduce power consumption, less area, less power delay and less power delay product. PREVIOUS WORK The full adder is basically 1 bit adder used to perform arithmetic addition. It contains three input bits like A, B, Cin and two output bits Sum and Carry. The Boolean expression for the Sum and Carry functions is as shown below. Sum = (A B) Cin Cout = A.B + Cin (AB) The conventional full adder circuit contains much number of transistors. The PMOS transistor acts as Pull up and NMOS transistor acts as Pull down transistor. It is very robust design but due to more power consumption and more number of transistor count, it not mainly used in digital design. Figure 1 shows the conventional transistor. There are many proposed design for full adder circuit. In recent years the different types of full adder using various logic styles have been proposed. Standard CMOS 28 transistor adder having pull up
- 11. IJVDT (2016) 11-17 © JournalsPub 2016. All Rights Reserved Page 11 International Journal of VLSI Design and Technology Vol. 2: Issue 2 www.journalspub.com Temperature Dependent Performance Analysis of SWCNT Bundles as VLSI Interconnects Shilpa Agrawal*, Ankit Kumar, Mayank Kumar Rai, Abhishek Shrivastava Department of Electronics and Communication Engineering, Thapar University, Patiala, India ABSTRACT Impact of temperature on delay in single walled carbon nanotube (SWCNT) bundle interconnects has been analyzed. Temperature-dependent circuit model for metallic SWCNT bundle is developed. The obtained results are matched with currently used copper interconnects at 22 nm technology node. It is seen that SWCNT bundle interconnects are of lower delay than copper interconnect with rise in temperature from 300K to 450K. Keywords: carbon nanotube, delay analysis, interconnects, single walled carbon nanotube INTRODUCTION Due to scaling in die size, performance of the copper based interconnects for global signaling get debased due to the decrease in conductivity of copper. In deep submicron level, grain boundary scattering and electron migration dominates effectively.[1] Material research lies out that carbon nanotube (CNT) is a potential candidate. CNTs are graphene tubes, having diameter in range of nanometer, formed by folding up graphene sheets of carbon atoms with a proper chirality.[2] Interconnects configured of these medium are executed in an identical size scale as the copper wires. CNTs have significant lower resistivity than copper because of the property of CNT that it has high electron mean free path than the copper.[3– 5] Moreover a CNT wire can accommodate a current density of 1010 A/cm2 or higher value without any destruction.[6] On the basis of structure CNTs are divided into two groups: single-wall carbon nanotubes (SWCNTs) and multi-wall carbon tubes (MWCNTs).SWCNTs are made up of single thin wall of graphene sheet while MWCNTs are made up of several concentric shells. On the basis of conductivity CNTs are divided into two groups: semiconducting CNTS (sCNTS) and metallic CNTs (mCNTs) depending on their chirality. Semiconducting CNTs are used to form transistors whereas metallic CNTs are used as interconnects. Single tube of SWCNT has large resistance due to which more than one SWCNT, called as SWCNT bundle, are combined parallel. By using SWCNT Bundles, overall resistance is reduced and it entitle CNT interconnect to be more appropriate for copper interconnects at advanced VLSI technology nodes. The main objective of this study is to develop the impedance parameters of SWCNT bundles based interconnect as a function of temperature. This paper analyses the effect of temperature variation on delay on SWCNT bundle interconnect.
- 12. IJVDT (2016) 18-25 © JournalsPub 2016. All Rights Reserved Page 18 International Journal of VLSI Design and Technology Vol. 2: Issue 2 www.journalspub.com Multilevel CMOS LDO-Voltage Circuit With Bi-CMOS LDO With and Without Amplifier Kamlesh Sharma1 , Gajendra Sujediya2 , Abdul Naim Khan3* 1,2 Rajasthan Institute of Engineering & Technology, Jaipur, India 3 Jaipur National University, Jaipur, India ABSTRACT An amplifier is a device that is use to amplify the signal strength. There are lots of amplifiers that can do other task besides amplifying. An amplifier is basically increasing the power level of signals. We can use this principal to make building block of radio system. The signals that we actually amplify in radio system are not necessarily sine wave, but sometimes they are. Here we are amplifying sine wave of AC voltage or current. In this paper, the purpose is on setting up a CMOS LDO (Low Drop Out) voltage circuit that can deliver significant voltage drop & regulated voltage at multi-level ports that can enable SOC or NOC which have only single power supply along with single power distribution circuit. Keywords: CMOS, low dropout, NoC, SoC, voltage regulator INTRODUCTION Complementary Metal Oxide Semiconductor (CMOS) is the semiconductor technology used in the transistors that are manufactured in to most of today's computer microchips. Semiconductors are made of silicon and germanium, materials which "in some way" conduct electricity, but not much more.[1] LDOs (Low dropout regulators) are a simple inexpensive way to regulate an output voltage that is to be powered from a higher voltage input. They are easy to design with and use. For most of the applications, the parameters in an LDO (Low dropout regulators) datasheet are usually very easy to understand. Although, the other applications require the designer to study the datasheet more closely to check whether or not the LDO is suitable for the specific circuit conditions.[2] Unfortunately, datasheets can’t present all the parameters under all possible operating conditions. The designer must interpret and extrapolate the obtained information to check the performance under non- specified conditions. LITERATURE REVIEW In this paper, a CMOS without capacitor LDO controller, which utilizing an unobtrusive inclination circuit and a huge number rate upgrade circuit, is planned. These papers introduced an approach to uproot the substantial outside capacitor, yet these sans capacitor LDO controllers experience the ill effects of unavoidable tradeoffs between the precision and criticism security.[3] A low voltage, low dropout (LDO) controller with an over current redesign circuit is proposed in this paper. By shaft zero following recurrence remuneration; it can accomplish security without ESR. It gives an over current sign with hysteretic capacity. It comprises of a voltage mention, a PMOS pass component, a mistake intensifier in input design used to initiative the pass component, security circuits and stacking components.[4] This paper gives an outline of dependability
- 13. IJVDT (2016) 26-29 © JournalsPub 2016. All Rights Reserved Page 26 International Journal of VLSI Design and Technology Vol. 2: Issue 2 www.journalspub.com Comparative Study of a 32 Bit Vedic Multiplier With a Conventional Binary Multiplier Rohan Muley*, Amrita Tuteja MIT, Ujjain, Madhya Pradesh, India ABSTRACT Multiplier plays a very important role in digital signal processing systems. To achieve high speed operation, Vedic method has been adopted in VLSI technology. Multipliers using vedic mathematics produces high evaluation results in terms of speed and device utilization. The aim of this work is to design digital multipliers based on the idea of Vedic mathematics. In order to implement a digital multiplier, Urdhva-tiryakbyham sutras of Vedic mathematics are used to develop vertical and cross wise operations. After all these are digital multiplier, so that they are implemented on FPGA board and tested through the 8 LED (s) in FPGA (Nexys 3). An implemented 32-bit Vedic multiplier has been simulated in Xilinx ISE 13.4 and compared with a 32-bit binary multiplier. Keywords: binary multiplier, DSP, vedic multiplier, VLSI INTRODUCTION In today's era more emphasis is given on the signal processing applications in VLSI. Since last two decades, work on Multiply and Accumulate (MAC) have been in order to improve the multiplication techniques. But before to improve the multiplication technique need to focus on why multiplication is important factor in arithmetic operations and what is this. Multiplication is an important basic function in arithmetic operations. Multiplication-based operations such as Multiply and Accumulate(MAC) and inner product are among some of the repeatedly used Computation- Intensive Arithmetic Functions(CIAF) currently designed in many Digital Signal Processing (DSP) applications such as convolution, Fast Fourier Transform (FFT), filtering and in microprocessors in its arithmetic and logic unit [1]. Since multiplication dominates the execution time of many DSP algorithms, so there is a need of high speed multiplier. When we talk of multiplication the first thing that strikes is “Mathematics”. Researchers prefer the ancient methodology for any mathematical application where sutras are used i.e. “Vedic Mathematics.” Vedic Mathematics is based on 16 sutras (aphorisms) namely (Anurupye) Shunyamanyat, Chalana- Kalanabyham, Ekadhikina Purvena, Ekanyunena Purvena, Gunakasamuchyah, Gunitasamuchyah, Nikhilam Navatashcaramam Dashatahm, Paraavartya Yojayet, Puranapuranabyham, Sankalanavyavakalanabhyam, Shesanyankena Charamena, ShunyamSaamyasamuccaye, Sopaantyadvayamantyam, Urdhvatiryakbyham, Vyashtisamanstih and Yaavadunam.[2] Each of these sutras is used for specific application, for example Nikhilam sutra is
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