The document discusses thyristor characteristics and operation. It begins by describing the thyristor structure as a four layer p-n-p-n semiconductor device with three p-n junctions. It then covers thyristor operation in the forward blocking/off state and at the forward breakdown voltage. Various thyristor triggering methods like gate, thermal, and dv/dt triggering are explained. Thyristor turn-off methods including natural and forced commutation are also summarized. Key thyristor parameters like latching current, holding current, and maximum gate voltages and currents are defined.