SIMS is a technique that uses a focused primary ion beam to bombard a sample surface, emitting secondary ions that are then analyzed using mass spectrometry. It allows for highly sensitive elemental and isotopic analysis of surfaces down to parts-per-billion. SIMS can be used in either static or dynamic mode to obtain spatial or depth profiles of sample composition. While very sensitive, it is also an expensive technique. Common applications include detecting trace impurities in semiconductors and generating high-resolution maps of elemental distributions.