lugli_slides.ppt

Teaching Nanoelectronics
Paolo Lugli
Institute for Nanoelectronics
Munich, Germany

2
Outline
 The Institute for Nanoelectronics at TUM
 What is Nanoelectronics ?
 Evolutionary vs. disruptive approaches
 More Moore
 More than Moore
 Beyond Moore
 How do we teach Nanoelectronics ?
 Diplom, Bachelor and Master of Science in Electronics and Information
Technologies (EI) at TUM
 International Master Programs at TUM
 Joint Master Program at NTU-Singapore
 New Joint EI-PH Master Program in “Nanoscience and Nanoengineering”
at TUM
 Conclusions

Institute for
Nanoelectronics
www.nano.ei.tum.de
Experimental activities
Nanoimprinting
Ni stamps
Si masters
100 nm
50 nm
30 nm
10 nm
Nanoimprinting with
MBE mold (for sub 10
nm resolution), with
homemade imprinter
Commercial imprinter (up to 2,5”,
down to 50 nm resolution)
• Photonic crystals
• Nanopatterning for
quantum wire growth
• Metallic molds
• Patterning of organic
films
. Sub-wavelength
grating
Fabrication of organic devices
400 500 600 700 800
0
20
40
60
80
100
85% @ 550nm
EQE
[%]
Wavelength [nm]
OPD external quantum efficiency
S D
PEDOT
gate
Plastic substrate
PVA
Electro-optical nanodevice characterization
0 1 2
0,0
500,0n
1,0µ
1,5µ
Vgs
-20 V
-15 V
-10 V
0 V; -5 V
drain
current
I
ds
[A]
source drain bias Usd
[V]
Si nanowire FET
IR emission of a Quantum
Cascade Laser

Institute for
Nanoelectronics
www.nano.ei.tum.de
Modelling/simulation activities
Multiscale approach for Nanoelectronics: from Devices to Architectures
Device-level models
• Drift-Diffusion simulation for
organic devices (TFTs, OLEDs,
photodiodes, solar cells)
• Ab-initio modeling of single
molecule diodes and CNTs
• Monte Carlo simulation of
quantum devices
Au
Architectures
• Passive Crossbar non
Volatile Memories
• Capacitive / Ferroelectric
Memories
• Quantum Cellular Automata
logic architectures
SPICE-level models
• DC circuit models for
nanodevices
• Coupling quantum circuits to
resonators
• Design of hysteretic devices
• Analysis of active matrix
array for imagers
Quantum
circuit
in
V out
V
in
C out
C
C
R
L C
q
R
q
L
M

Nanoelectronics
5
• Nanotechnology is the design and construction of
useful technological devices whose size is a few billionths
of a meter
• Nanoscale devices will be built of small assemblies of
atoms linked together by bonds to form macro-molecules
and nanostructures
•Nanoelectronics encompasses nanoscale circuits and
devices including (but not limited to) ultra-scaled FETs,
quantum SETs, RTDs, spin devices, superlattice arrays,
quantum coherent devices, molecular electronic devices,
and carbon nanotubes.

• Negative resistance devices, switches (RTDs,
molecular), spin transistors
• Single electron transistor (SET) devices and circuits
• Quantum cellular automata (QCA)
Limits of Conventional CMOS technology
• Device physics scaling
• Interconnects
Nanoelectronic alternatives?
Issues
• Predicted performance improves with decreased
dimensions, BUT
• Smaller dimensions-increased sensitivity to fluctuations
• Manufacturability and reproducibility
• Limited demonstration system demonstration
New information processing paradigms
• Quantum computing, quantum info processing (QIP)
• Sensing and biological interface
• Self assembly and biomimetic behavior
6
Motivation for Nanoelectronics

7
The roadmap
Semiconductor technology trends (ITRS 2006)

Materials for Si-nanoelectronics
At the origin of Si microelectronics only few elements were necessary for the whole
processes. Current technology requires a much larger number of materials.
Source: Intel 9

More Moore -> Beyond Moore
11
Robert Chau, Intel, ICSICT, 2005

Critical issues
1988
10-1
Year
Channel
Electrons
1992 1996 2000 2004 2008 2012 2016 2020
100
101
102
103
104
16M 64M
256M
1G
4G
16G Memory Capacity/Chip
4M
12

Nano-Device Structure Evolution
13
Source: Intel

Lg = 1.3µm; Ø = 26 nm; tox = 300nm SiO2
•Normally-off
•Schottky contacts -2,0µ
-1,5µ
-1,0µ
-500,0n
0,0
-2 -1 0
-Vgs
-20 V
-15 V
-10 V
+5V; 0 V; -5 V
drain bias Vds
[V]
drain
current
I
d
[A]
20V
;
Weber, W.M. et al. IEEE Proc. ESSDERC 2006, p. 423 (2006)
gate
S D
Vd
Vg
Id
NW
Si-NW transistor: output characteristics
15

Possible Quantum Dot Applications
Photodetector
Input
Quantum dots or
single electron transistors
as processing elements
CMOS Drivers providing fan-out
Single “cell” of a Cellular Architecture
Single Electron Memory
Nanoelectronic Integrated
Circuit (NIC)
Quantum Cellular Automata
Quantum Computation (QBITs)
“1” “0”
1
2
3
4
0
source drain
nanocrystals
gate
SiO2
gate
Memory
node
Si channel
SiO2
Quantum
dots
Tunneling
barriers
Quantum
dots
16

17
Beyond Moore
Beyond CMOS logic and memory device candidates:
• Nanowire transistors
• CNT transistors
• Resonant tunneling devices
• NEMS devices
• Single electron transistors
• Molecular devices
• Spintronic devices
All those candidates (some of which not yet demonstrated) still suffer
from major reliability and stability problems

18
Molecular components
OPV11 molecules with simplified phenyl side chains
synthesized by the group of Prof. Dr. E. Thorn-Csányi at
the University of Hamburg)
In collaboration with G. Abstreiter, WSI, M. Tornow, TU Braunschweig
20 nm embedded
GaAs layer after
etching and
deposition of 3 nm Ti
and 7 nm Au.
5 nm embedded
GaAs layer after
etching and
deposition of 2 nm Ti
and 6 nm Au.
S. Strobel et al., SMALL 5, 579-582 (2009)

19
Cross bar non volatile memory
V
The current-voltage characteristics of molecules is typically hysteretic, with step-like
nonlinearities and possibly non-symmetric (rectifying) behavior.
A crossbar memory – probably the simplest possible functional circuit – is one of
the proposed application of single molecule electronics
G. Casaba et al., IEEE Transactions on Nanotechnology, 8, 369 (2009)

Problems with single molecule devices
-3 -2 -1 0 1 2 3
-500p
-400p
-300p
-200p
-100p
0
100p
200p
300p
400p
500p 0Down (P03:S05-08-)
1Up (P03:S05-08-)
1Down (P03:S05-08-)
2Up (P03:S05-08-)
2Down (P03:S05-08-)
3Up (P03:S05-08-)
3Down (P03:S05-08-)
4Up (P03:S05-08-)
4Down (P03:S05-08-)
5Up (P03:S05-08-)
5Down (P03:S05-08-)
6Up (P03:S05-08-)
6Down (P03:S05-08-)
7Up (P03:S05-08-)
7Down (P03:S05-08-)
8Up (P03:S05-08-)
8Down (P03:S05-08-)
9Up (P03:S05-08-)
9Down (P03:S05-08-)
10Up (P03:S05-08-)
10Down (P03:S05-08-)
11Up (P03:S05-08-)
11Down (P03:S05-08-)
12Up (P03:S05-08-)
12Down (P03:S05-08-)
13Up (P03:S05-08-)
13Down (P03:S05-08-)
14Up (P03:S05-08-)
14Down (P03:S05-08-)
15Up (P03:S05-08-)
15Down (P03:S05-08-)
Current
[A]
Voltage [V]
G17-1c, P03, S05, über Nacht
A large variation is found in the IV characteristics between succesive sweeps.
Reasons can be due to:
• Configurational changes in single
molecules
• Variation in the number of
molecules attached to the
electrodes
• Changes in the bond of a single
molecule to the metal contact
• …
Such variability has to be dealt
at a circuit/architecture level

Molecular transistor
Back gate: a molecule attached to source
and drain electrodes on an oxidized metal
or heavily doped Si gate (substrate). This
is the same configuration of the Thin Film
Transistors
Electrochemical gate: a molecule bridged
between source and drain electrodes in an
electrolyte in which a gate field is applied
by a third electrode inserted in the
electrolyte.
Chemical gate: current through the
molecule is controlled via a reversible
chemical event, such as binding, reaction,
doping or complexation.
Once a conducting molecule is set between 2 contacts, an additional electrode has
be introduced as gate. There are various possibilities:

Coupled nanomagnets
Fabrication and pictures by A. Imre
Investigations of permalloy nanomagnets (thermally
evaporated and patterned by electron beam
lithography) confirm the simulation results Simulation
AFM
Simulated
field
MFM
Courtesy of W. Porod, Notre Dame University

Planar Majority Gate Design
Output points down only if
both inputs are pointing
up  NAND gate.
•Difficult to design – ferro- and antiferromagnetic
couplings to the central dot should be equally
strong
•Electrical inputs are difficult to fabricate –
horizontally lying dots provide a hard-wired input.
No output, we just imaged it with the MFM
•Design is based on Parish and Forshaw:
Magnetic Cellular Automate Systems IEE Proc.-
Circuits Devices Syst., Vol. 151, No. 5, October
2004
Programming input
(bias to center dot)
Input A
Input B
Output
Imre et. al. Science 2006
3
200 nm

Working majority gate with nanomagnets
24
Imre et. al. Science 2006
SEM images MFM images

Logic with nanomagnets
25
In collaboration with M. Becherer and D. Schmit-Lansiedel (TUM) , W. Porod (Notre Dame)
Outputs
Inputs
Information propagation
The challenges:
How to make signals propagating?  Integrated clocking
How to write in the magnets?  Localized field from wires
How to read out the magnets?  Hall sensor
M. Becherer et al., IEEE TRANSACTIONS ON NANOTECHNOLOGY 7, 316 (2008)

26
More than Moore
Interfacing to the real world
If the interaction is based on a non-electrical phenomenon, then specific
transducers are required. Sensors, actuators, displays, imagers, fluidic or bio-
interfaces (DNA, Protein, Lab-On-Chip, Neuron interfaces, etc.) are in this
category
Enhancing electronics with non-pure electrical devices
New devices can be used in RF or analog circuits and signal processing.
Thanks to electrical characteristics or transfer functions that are unachievable
by regular MOS circuits, it is possible to reach better system performances. RF
MEMS electro-acoustic high Q resonators are a good example of this category.
Embedding power sources with the electronics:
Several new applications will require on-chip or in-package micro power
sources (autonomous sensors or circuits with permanent active security
monitoring for instance). Energy scavenging micro-sources or micro-batteries
are examples of this category.

27
27
Why organic electronics ?
• Easy to process (low costs)
• Large area application
• Flexible substrates
• Chemical tunability of
conjugated polymers
(absorption spectrum)
• Easy integration in different
devices
• Ecological and economic
advantages
Example of organic sheet-image scanner
Inkjet-Printed solar cell from Konarka
OLED Display
For Mp3-player OLED TV from Sony

28
IV-Characteristics BHJ OPV
1,00E-06
1,00E-05
1,00E-04
1,00E-03
1,00E-02
1,00E-01
1,00E+00
1,00E+01
1,00E+02
-4,0 -3,0 -2,0 -1,0 0,0 1,0 2,0
V
I
[mA/cm
2
]
Dark
Illuminated
P3HT
PCBM
Top Electrode
P3HT:PCBM Blend
PEDOT:PSS
ITO
Substrate
Organic Photodetectors on glass
• OPD with on/off ratio of more than 104 @ -1 V
ITO/PEDOT:PSS/P3HT:PCBM/LiF/AL
0.6 nm LiF, 100 nm Al
140 nm P3HT:PCBM (1:1)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
500 550 600 650 700 750 800 850
Wavelength [nm]
Amplitude
[normalized]
Bulk heterojunction photodetector
S. Tedde et al., Fully Spray Coated Organic Photodiodes, Nano Letters 9 (3), 980 (2009)

29
Organic Photodetectors on plastic
In collaboration with Siemens CT MM1
Multibarrier PET Foil
Au or ITO
PEDOT:PSS
P3HT:PCBM blend
Ca
Ag
Thin Film Encap.
I/V
400 500 600 700 800
0
20
40
60
80
100
85% @ 550nm
EQE
[%]
Wavelength [nm]

The combination of organic semiconductors with a CMOS-chip offers
advantages compared with a conventional CMOS-sensor:
high photosensitivity -> fill factors up to 100 %
wavelength tunability -> sensors for infrared/ultraviolet region
inexpensive fabrication
subwavelength grading for optimized performance and polarization sensitivity
PCBM:P3HT
glass-substrate
ITO
Al 100 nm
PEDOT
LiF 1nm
ITO 100 nm
Requirements for combination CMOS-organic:
work function of the metallization of CMOS
chip must be aligned to organic semiconductor
energy levels -> e.g. Aluminium
deposition process of organic semiconductors
should be possible on rough/patterned surfaces
Standard organic photodetector
Integration with CMOS
In collaboration with Uni. Trento and Fondazione Bruno Kessler 30

-4 -3 -2 -1 0 1 2
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
inverted diode
(dark/light=100 mW/cm²)
noninverted
Current
density
(mA/cm²)
Voltage (V)
300 400 500 600 700 800 900 1000
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
Transmission(%)
wave length (nm)
IV-curves (dark/light):
on/off-ratio can be even better than of
standard device
lower dark current
lower light current (due to higher
absorbance of gold electrode compared with
ITO)
higher serial resistance
Transmission of gold-electrode (20 nm)
Preliminary results on inverted structure
D. Baierl et al., to be published in Organic Electronics 31

32
Conclusions
 Nanotechnology provides a variety of interesting and
promising nanostructures
 Integration with CMOS will be the first step in the profitable
use of nanostructures, once process compatibility is proven
 Critical issues such as reliability, stability and lifetime are
going to become routine and will have to be addressed at a
circuit/architecture level
 Novel circuits and architectures are going to be needed for a
full exploitation of nanocomponents

Institute for
Nanoelectronics
www.nano.ei.tum.de
Teaching activities
Lectures
 NANOLECTRONICS (6. Sem. Bach. EI)
 NANOSYSTEMS (1. Sem. MSc. EI,)
 MOLECULAR ELECTRONICS (2. Sem. MSc. EI)
 COMPUTATIONAL METHOD IN NANOELECTRONICS (2. Sem. MSc. EI)
 SEMICONDUCTOR QUANTUM DEVICES (1. Sem. MSc. EI)
 NANOTECHNOLOGY (1. Sem. MSc. EI, MSc. “Microwave Engineering”,
MSc “Communication Engineering”, MSc. in “Engineering Physics”)
Labs
 Nanoelectronics (6. Sem. Bach. EI.)
 Simulation of semiconductor nanostructures (MSc. EI)
 Characterization and simulation of molecular devices (MSc. EI.)
 Design of molecular circuits (MSc. EI)
 Nanobioelectronics (MSc. EI)

Institute for
Nanoelectronics
www.nano.ei.tum.de
International Initiatives
Joint Bachelor Program in EE with Georgiatech
Joint Master Program NTU/TUM on "Integrated Circuit Design„
Joint Master Program NTU/TUM on „Microelectronics„
Int. Master in „Communication Engineering“ (section on „Comunication Electronics“)
Int. Master in „Nanoscience and Nanoengineering“ (starting 2011)
Joint Ph.D. Program (BI-NATIONALLY SUPERVISED DOCTORAL THESIS) with
University of Trento (Italy)
Joint Ph.D. Program (BI-NATIONALLY SUPERVISED DOCTORAL THESIS) with
Universita‘ delle Marche (Italy)
Research cooperations with several european and international companies, research labs
and universities (STMicroelectronics, IBM, Arizona State University, MIT, Notre Dame
University, University of Illinois U.C., Nanyang Technological University, Universita‘ di
Roma „Tor Vergata“, Universita‘ di Modena, …)

35
Bachelor EI (since Oct. 2008)
Menu „Nanoelectronics“ (30 Credits; 5. and 6. Semester)
Nanoelectronics 5 Sem 6 Credits
CMOS-Technologie 5 Sem 3 Credits
Schaltungssimulation 5 Sem 3 Credits
Praktikum Elektronische Bauelemente 5 Sem 3 Credits
Nanotechnology 6 Sem 6 Credits
Halbleitersensoren 6 Sem 3 Credits
Optoelektronik 6 Sem 3 Credits
Projektpraktikum Nanoelektronik
und Nanotechnologie 6 Sem 3 Credits

36
MSc EI (starting Oct. 2010)

37
MS Communication Engineering
Mandatory Modules Sem.
Adaptive and Array Signal Processing 1
Broadband Communication Networks 1
Digital IC Design 1
Engineering Management 1
Information Theory and Source Coding 1
Advanced Topics in IC Design 2
Electronic Design Automation 2
Mixed Signal Electronics 3
Aspects of Integrated System Technology and Design 3
Testing of Digital Circuits 3
A paid internship of 10 weeks duration in a
German company is intended for the
semester break between the 2nd and the 3rd
semester.
Elective Modules Sem.
Nanotechnology 1
Time-Varying Systems and Computations 1
Mobile Communications 1
Mathematical Methods of Information Technology 1
Advanced MOSFETs and Novel Devices 2
Image and Video Compression 2
HW/SW Codesign 2
Nanoelectronics 2
Physical Electronics 2
Advanced Network Architectures and Services 1 2
System on Chip Solutions in Networking 2
IC Manufacturing 3
MIMO Systems 3
Optimization in Communications and Signal Processing 3
Computational Methods in Nanoelectronics 3
Advanced Network Architectures and Services 2 3

38
MS MicroWave Engineering
Mandatory Courses Sem.
Electromagnetics 1 1
Fundamentals in Communication Theory 1
Microwave Semiconductor Devices 1
Quantum Nanoelectronics 1
Integrated Systems 1
Advanced MOSFETs and Novel Devices 2
Nanoelectronics 2
Selected Topics in Nanotechnology 2
Nanotechnology 3
Computational Methods in Nanoelectronics 3
Seminar on Topics in RF-Engineering and
Nanoelectronics
3

39
MS Engineering Physics
Among the elective lectures in Material Science
students can choose , among others,
“Semiconductor Nanoscience and Technology I”,
“Bio- and Nanoelectronic Systems I and II”,
“Introduction to surface and interface physics”,
as special physics lecture, or
“Molecular Electronics”,
“Nanotechnology”,
“Selected Topics in Nanotechnology”
as engineering lecture
Energy Science: provide a specialized education in
Energy Science with lectures ranging from fission,
fusion to all kinds of renewable energies.
Materials Science: dedicated education in Materials
Science including lectures in bio-physics, low
dimensional electronic systems, quantum optics,
solid state spectroscopy and many more.

40
International MS Programs in Singapore
A series of Joint International MS Programs are
offered by TUM together with NTU :
 Microelectronics
 Integrated Circuit Design
 Aerospace Engineering (from Aug. 2009)
and with NUS
 Industrial Chemistry
in Singapore

41
NTU-TUM MS Microelectronics

42
NTU-TUM MS Microelectronics

43
NTU-TUM MS Integrated Circuit Design

44
PCP/SPUR Programme
Master Programmes under Professional Conversion Programme (PCP) with SPUR
(Skills Programme for Upgrading and Resilience) funding
GIST and the Singapore Workforce Development Agency (WDA) are jointly rolling out four
Master of Science programmes targeted at Professionals, Managers, Executives,
Technicians (PMETs) who would like to convert or upgrade their skills under the
Professional Conversion Programme (PCP).
This coming May, the Master of Science in Integrated Circuit Design will commence for
PMETs who are seeking a career in the Integrated Circuit Design industry. Trainees* need
only pay net fees of *S$3210 (inclusive of GST) to get a world class education from
leading Universities (NTU and TUM).
Programmes which are offered under SPUR funding:
Master of Science in Industrial Chemistry TUM / NUS
Master of Science in Microelectronics TUM / NTU
Master of Science in Integrated Circuit Design TUM / NTU
Master of Science in Aerospace Engineering TUM / NTU

45
MS Nanoscience and Nanoengineering
module name Sem ECTS
Physics for Nanoscience1 1 6
Circuit theory for Nanoscience2 1 6
Materials and Chemistry for
Nanoscience1 1 6
Signal processing2 1 6
Fundamental IT skills 1 3
Block Practical 1 3
Seminar 1 3
Electronics Lab 1 3
Management / Soft skills 1 6
Nanoscience 2 6
Advanced condensed matter 2 4
Computational methods in
nanoscience
2 5
Nano biotechnology 2 3
Intro. Organic Chemistry 2 3
Elective Modules 2 6
Advanced nanoscience seminar 2 3
Nanosystems 3 3
Nanoelectronics 3 3
Nanophotonics 3 3
Elective Modules 3 6
Project work / Internship 3 15
Masters Thesis 4 30
• International MS program in English
• Initial selection of candidates
In the first semester, 12 credits will be
devoted to the attempt of providing a
common background for all. Thus, students
with a Bachelor in Physics will be required to
take two modules of basics engineering
courses (2 in the table) while students with
an EI Bachelor will take two basic physics
modules (1 in the table).
Modules with 3 ECTS corresponds to a
standard course with 2 hours lecture and 1
hour recitation. Modules with larger numbers
of credits combine lectures with practical
works, seminars or, in some cases,
homework.

46
Conclusions
 Nanoelectronics is slowly entering the EE curricula at both
Bachelor and MS level
 Interdepartment and interfaculty curricula are necessary,
especially between EE, Physics, Material Science, Chemistry and
Biology
 Very interesting opportunities offered by international
cooperations
 Great potentials for nanoelectronics in the areas of energy,
medicine and automation, both for teaching and research

48
Acknowledgments
Centre for
Nanotechnology and
Nanomaterials
Institute for Nanoelectronics
nan
o
MDM
U
Tor Vergata

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