SPICE MODEL of MA2YF80 (Professional Model) in SPICE PARK
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This report details the modeling parameters and circuit simulation results for a general purpose rectifier diode (MA2YF80) manufactured by Panasonic. It includes forward current characteristics, capacitance, and reverse recovery characteristics with comparisons between measured and simulated data. The document emphasizes the accuracy of the simulations by presenting %error values alongside the results.
SPICE MODEL of MA2YF80 (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESIONAL PART NUMBER: MA2YF80 MANUFACTURER: PANASONIC Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
- 2. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
- 3. Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V I(D1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 DMA2Y F80_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
- 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.001 0.566 0.565 -0.18 0.002 0.650 0.648 -0.31 0.005 0.760 0.763 0.39 0.01 0.858 0.857 -0.12 0.02 0.964 0.965 0.10 0.05 1.158 1.150 -0.69 0.1 1.338 1.345 0.51 0.2 1.616 1.614 -0.12 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
- 5. Capacitance Characteristic Circuit Simulation Result 10pA 1.0pA 100fA 1V 25V 50V 75V 100V -I(X_U1.D_D1)/(800/1u) V(N11360) Evaluation Circuit V2 0Vdc V2 = 800 V1 V1 = 0 U1 TD = 0 MA2Y F80_P TR = 1us TF = 10ns PW = 20us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
- 6. Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 1 1.581 1.583 0.11 2 1.329 1.337 0.59 5 1.054 1.076 2.09 10 0.876 0.913 4.20 20 0.746 0.775 3.89 50 0.631 0.624 -1.11 100 0.553 0.531 -3.98 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
- 7. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.96us 20.00us 20.04us 20.08us 20.12us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 V2 = 11.7V TD = 12ns U1 TR = 5ns MA2Y F80_P TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 14.00 13.95 -0.36 trb ns 12.00 11.85 -1.25 trr ns 26.00 25.85 -0.58 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
- 8. Reverse Recovery Characteristic Reference Trj = 13.2(ns) Trb= 24.0(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-