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Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 2-1
Chapter 2 Motion and Recombination
of Electrons and Holes
2.1 Thermal Motion
Average electron or hole kinetic energy 2
2
1
2
3
th
mv
kT 

kg
10
1
.
9
26
.
0
K
300
JK
10
38
.
1
3
3
31
1
23










eff
th
m
kT
v
cm/s
10
3
.
2
m/s
10
3
.
2 7
5





2.1 Thermal Motion
• Zig-zag motion is due to collisions or scattering
with imperfections in the crystal.
• Net thermal velocity is zero.
• Mean time between collisions is m ~ 0.1ps

Hot-point Probe can determine sample doing type
Thermoelectric Generator
(from heat to electricity )
and Cooler (from
electricity to refrigeration)
Hot-point Probe
distinguishes N
and P type
semiconductors.

2.2 Drift
2.2.1 Electron and Hole Mobilities
• Drift is the motion caused by an electric field.

• p is the hole mobility and n is the electron mobility
mp
p
q
v
m 
E

p
mp
m
q
v

E

p
mp
p
m
q
 
n
mn
n
m
q
 
E
p
v 
 E
n
v 



Electron and hole mobilities of selected
semiconductors
Si Ge GaAs InAs
 n (cm2
/V∙s) 1400 3900 8500 30000
 p (cm2
/V∙s) 470 1900 400 500
.
s
V
cm
V/cm
cm/s 2








v = E ;  has the dimensions of v/E
Based on the above table alone, which semiconductor and which carriers
(electrons or holes) are attractive for applications in high-speed devices?

EXAMPLE: Given p = 470 cm2/V·s, what is the hole drift velocity at
E = 103 V/cm? What is mp and what is the distance traveled between
collisions (called the mean free path)? Hint: When in doubt, use the
MKS system of units.
Solution: n = pE = 470 cm2/V·s  103 V/cm = 4.7 105 cm/s
mp = pmp/q =470 cm2/V ·s  0.39  9.110-31 kg/1.610-19 C
= 0.047 m2/V ·s  2.210-12 kg/C = 110-13s = 0.1 ps
mean free path = mhnth ~ 1 10-13 s  2.2107 cm/s
= 2.210-6 cm = 220 Å = 22 nm
This is smaller than the typical dimensions of devices, but getting close.
Drift Velocity, Mean Free Time, Mean Free Path

There are two main causes of carrier scattering:
1. Phonon Scattering
2. Ionized-Impurity (Coulombic) Scattering
2
/
3
2
/
1
1
1 





 T
T
T
velocity
thermal
carrier
density
phonon
phonon
phonon 

Phonon scattering mobility decreases when temperature rises:
 = q/m
vth  T1/2
2.2.2 Mechanisms of Carrier Scattering
 T

_
+
- -
Electron
Boron Ion Electron
Arsenic
Ion
Impurity (Dopant)-Ion Scattering or Coulombic Scattering
d
a
d
a
th
impurity
N
N
T
N
N
v




2
/
3
3

There is less change in the direction of travel if the electron zips by
the ion at a higher speed.

Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 2-10
Total Mobility
1E14 1E15 1E16 1E17 1E18 1E19 1E20
0
200
400
600
800
1000
1200
1400
1600
Holes
Electrons
Mobility
(cm
2
V
-1
s
-1
)
Total Impurity Concenration (atoms cm
-3
)
Na + Nd (cm-3)
impurity
phonon
impurity
phonon






1
1
1
1
1
1





Temperature Effect on Mobility
1015
Question:
What Nd will make
dn/dT = 0 at room
temperature?

Velocity Saturation
• When the kinetic energy of a carrier exceeds a critical value, it
generates an optical phonon and loses the kinetic energy.
• Therefore, the kinetic energy is capped at large E, and the
velocity does not rise above a saturation velocity, vsat .
• Velocity saturation has a deleterious effect on device speed as
shown in Ch. 6.

2.2.3 Drift Current and Conductivity
Jp
n
E
unit
area
+
+
Jp = qpv A/cm2 or C/cm2·sec
If p = 1015cm-3 and v = 104 cm/s, then
Jp= 1.610-19C  1015cm-3  104cm/s
= 2
2
A/cm
1.6
cm
C/s
6
.
1 

EXAMPLE:
Hole current density

Jp,drift = qpv = qppE
Jn,drift = –qnv = qnnE
Jdrift = Jn,drift + Jp,drift =  E =(qnn+qpp)E
conductivity (1/ohm-cm) of a semiconductor is
 = qnn + qpp

2.2.3 Drift Current and Conductivity
1/ = is resistivity (ohm-cm)

N-type
P-type
Relationship between Resistivity and Dopant Density
 = 1/
DOPANT
DENSITY
cm
-3
RESISTIVITY (cm)

EXAMPLE: Temperature Dependence of Resistance
(a) What is the resistivity () of silicon doped
with 1017cm-3 of arsenic?
Solution:
(a) Using the N-type curve in the previous
figure, we find that  = 0.084 -cm.
(b) What is the resistance (R) of a piece of this
silicon material 1m long and 0.1 m2 in cross-
sectional area?
(b) R = L/A = 0.084 -cm  1 m / 0.1 m2
= 0.084 -cm  10-4 cm/ 10-10 cm2
= 8.4  10-4 

EXAMPLE: Temperature Dependence of Resistance
By what factor will R increase or decrease from
T=300 K to T=400 K?
Solution: The temperature dependent factor in  (and
therefore ) is n. From the mobility vs. temperature
curve for 1017cm-3, we find that n decreases from 770
at 300K to 400 at 400K. As a result, R increases by
93
.
1
400
770


2.3 Diffusion Current
Particles diffuse from a higher-concentration location
to a lower-concentration location.

2.3 Diffusion Current
dx
dn
qD
J n
diffusion
n 
,
dx
dp
qD
J p
diffusion
p 

,
D is called the diffusion constant. Signs explained:
n p
x x

Total Current – Review of Four Current Components
Jn = Jn,drift + Jn,diffusion = qnnE +
dx
dn
qDn
Jp = Jp,drift + Jp,diffusion = qppE –
dx
dp
qDp
JTOTAL = Jn + Jp

2.4 Relation Between the Energy
Diagram and V, E
E(x)=
dx
dE
q
1
dx
dE
q
1
dx
dV v
c



Ec and Ev vary in the opposite
direction from the voltage. That
is, Ec and Ev are higher where
the voltage is lower.
+ –
Si
E
x
Ec(x)
Ef(x)
Ev(x)
E
0.7V
-
+
V(x)
0.7V
x
0
(a)
(b)
(c)
x
Ef (x)
E
0.7V
-
+
Ec(x)
Ev(x)
N-
+ –
0.7eV
N type Si

2.5 Einstein Relationship between D and 
dx
dE
e
kT
N
dx
dn c
kT
/
)
E
E
(
c f
c 



dx
dE
kT
n c


kT
/
)
E
E
(
c
f
c
e
N
n



Consider a piece of non-uniformly doped semiconductor.
Ev(x)
Ec(x)
Ef
n-type semiconductor
Decreasing donor concentration
Ec(x)
Ef
N-type semiconductor
E
q
kT
n



2.5 Einstein Relationship between D and 
E
q
kT
n
dx
dn


0



dx
dn
qD
qn
J n
n
n E
 at equilibrium.
E
E
kT
qD
qn
qn n
n

 
0
n
n
q
kT
D 

These are known as the Einstein relationship.
p
p
q
kT
D 

Similarly,

EXAMPLE: Diffusion Constant
What is the hole diffusion constant in a piece of
silicon with p = 410 cm2 V-1s-1 ?
Solution:
Remember: kT/q = 26 mV at room temperature.
/s
cm
1
1
s
V
cm
410
)
mV
26
( 2
1
1
2











 

p
p
q
kT
D 

2.6 Electron-Hole Recombination
•The equilibrium carrier concentrations are denoted with
n0 and p0.
•The total electron and hole concentrations can be different
from n0 and p0 .
•The differences are called the excess carrier
concentrations n’ and p’.
'
0 n
n
n 

'
0 p
p
p 


Charge Neutrality
•Charge neutrality is satisfied at equilibrium (n’=
p’= 0).
• When a non-zero n’is present, an equal p’may
be assumed to be present to maintain charge
equality and vice-versa.
•If charge neutrality is not satisfied, the net charge
will attract or repel the (majority) carriers through
the drift current until neutrality is restored.
'
p
'
n 

Recombination Lifetime
•Assume light generates n’and p’. If the light is
suddenly turned off, n’and p’decay with time
until they become zero.
•The process of decay is called recombination.
•The time constant of decay is the recombination
time or carrier lifetime,  .
•Recombination is nature’s way of restoring
equilibrium (n’= p’= 0).

• ranges from 1ns to 1ms in Si and depends on
the density of metal impurities (contaminants)
such as Au and Pt.
•These deep traps capture electrons and holes to
facilitate recombination and are called
recombination centers.
Recombination Lifetime
Ec
Ev
Direct
Recombination
is unfavorable in
silicon
Recombination
centers

Direct and Indirect Band Gap
Direct band gap
Example: GaAs
Direct recombination is efficient
as k conservation is satisfied.
Indirect band gap
Example: Si
Direct recombination is rare as k
conservation is not satisfied
Trap
Modern Semiconductor Devices for Integrated Circuits (C. Hu)


n
dt
n
d 



dt
p
d
p
n
dt
n
d 










Rate of recombination (s-1cm-3)
p
n 



EXAMPLE: Photoconductors
A bar of Si is doped with boron at 1015cm-3. It is
exposed to light such that electron-hole pairs are
generated throughout the volume of the bar at the
rate of 1020/s·cm3. The recombination lifetime is
10s. What are (a) p0 , (b) n0 , (c) p’, (d) n’, (e) p ,
(f) n, and (g) the np product?

Solution:
(a) What is p0?
p0 = Na = 1015 cm-3
(b) What is n0 ?
n0 = ni
2/p0 = 105 cm-3
(c) What is p’?
In steady-state, the rate of generation is equal to the
rate of recombination.
1020/s-cm3 = p’/
 p’= 1020/s-cm3 · 10-5s = 1015 cm-3

(d) What is n’?
n’= p’= 1015 cm-3
(e) What is p?
p = p0 + p’= 1015cm-3 + 1015cm-3 = 2×1015cm-3
(f) What is n?
n = n0 + n’= 105cm-3 + 1015cm-3 ~ 1015cm-3 since n0 << n’
(g) What is np?
np ~ 21015cm-3 ·1015cm-3 = 21030 cm-6 >> ni
2 = 1020 cm-6.
The np product can be very different from ni
2.

2.7 Thermal Generation
If n’is negative, there are fewer
electrons than the equilibrium value.
As a result, there is a net rate of
thermal generation at the rate of |n|/ .

2.8 Quasi-equilibrium and Quasi-Fermi Levels
• Whenever n’= p’ 0, np  ni
2. We would like to preserve
and use the simple relations:
• But these equations lead to np = ni
2. The solution is to introduce
two quasi-Fermi levels Efn and Efp such that
kT
E
E
c
f
c
e
N
n
/
)
( 


kT
E
E
v
v
f
e
N
p
/
)
( 


kT
E
E
c
fn
c
e
N
n
/
)
( 


kT
E
E
v
v
fp
e
N
p
/
)
( 


Even when electrons and holes are not at equilibrium, within
each group the carriers can be at equilibrium. Electrons are
closely linked to other electrons but only loosely to holes.

EXAMPLE: Quasi-Fermi Levels and Low-Level Injection
Consider a Si sample with Nd=1017cm-3 and n’=p’=1015cm-3.
(a) Find Ef .
n = Nd = 1017 cm-3 = Ncexp[–(Ec– Ef)/kT]
 Ec– Ef = 0.15 eV. (Ef is below Ec by 0.15 eV.)
Note: n’and p’are much less than the majority carrier
concentration. This condition is called low-level
injection.

Now assume n = p = 1015 cm-3.
(b) Find Efn and Efp .
n = 1.011017cm-3 =
 Ec–Efn = kT  ln(Nc/1.011017cm-3)
= 26 meV  ln(2.81019cm-3/1.011017cm-3)
= 0.15 eV
Efn is nearly identical to Ef because n  n0 .
kT
E
E
c
fn
c
e
N
/
)
( 

EXAMPLE: Quasi-Fermi Levels and Low-Level Injection

EXAMPLE: Quasi-Fermi Levels
p = 1015 cm-3 =
 Efp–Ev = kT  ln(Nv/1015cm-3)
= 26 meV  ln(1.041019cm-3/1015cm-3)
= 0.24 eV
kT
E
E
v
v
fp
e
N
/
)
( 

Ec
Ev
Efp
Ef Efn

2.9 Chapter Summary
dx
dn
qD
J n
diffusion
n 
,
dx
dp
qD
J p
diffusion
p 

,
n
n
q
kT
D 

p
p
q
kT
D 

E
p
p
v 

E
n
n
v 

E
p
drift
p qp
J 

,
E
n
drift
n qn
J 

,
-

2.9 Chapter Summary
 is the recombination lifetime.
n’and p’are the excess carrier concentrations.
n = n0+ n’
p = p0+ p’
Charge neutrality requires n’= p’.
rate of recombination = n’/ = p’/
Efn and Efp are the quasi-Fermi levels of electrons and
holes.
kT
E
E
v
v
fp
e
N
p
/
)
( 


kT
E
E
c
fn
c
e
N
n
/
)
( 



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