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THE SEGMENTAL APPROXIMATION IN MULTIJUNCTION
SOLAR CELLS
ABSTRACT
The segmental approach has been considered to analyze dark and light I–V curves. The
photovoltaic (PV) dependence of the open-circuit voltage (Voc ), the maximum power point
voltage (Vm), the efficiency (η) on the photogenerated current (Jg ), or on the sunlight
concentration ratio (X), are analyzed, as well as other photovoltaic characteristics of
multijunction solar cells. The characteristics being analyzed are split into monoexponential
(linear in the semilogarithmic scale) portions, each of which is characterized by a definite value
of the ideality factor A and preexponential current J0 . The monoexponentiality ensures
advantages, since at many steps of the analysis, one can use the analytical dependences instead
of numerical methods. In this work, an experimental procedure for obtaining the necessary
parameters has been proposed, and an analysis of GaInP/GaInAs/Ge triple-junction solar cell
characteristics has been carried out. It has been shown that up to the sunlight concentration
ratios, at which the efficiency maximum is achieved, the results of calculation of dark and light
I–V curves by the segmental method fit well with the experimental data. An important
consequence of this work is the feasibility of acquiring the resistanceless dark and light I–V
curves, which can be used for obtaining the I–V curves characterizing the losses in the transport
part of a solar cell.

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The segmental approximation in multijunction solar cells

  • 1. THE SEGMENTAL APPROXIMATION IN MULTIJUNCTION SOLAR CELLS ABSTRACT The segmental approach has been considered to analyze dark and light I–V curves. The photovoltaic (PV) dependence of the open-circuit voltage (Voc ), the maximum power point voltage (Vm), the efficiency (η) on the photogenerated current (Jg ), or on the sunlight concentration ratio (X), are analyzed, as well as other photovoltaic characteristics of multijunction solar cells. The characteristics being analyzed are split into monoexponential (linear in the semilogarithmic scale) portions, each of which is characterized by a definite value of the ideality factor A and preexponential current J0 . The monoexponentiality ensures advantages, since at many steps of the analysis, one can use the analytical dependences instead of numerical methods. In this work, an experimental procedure for obtaining the necessary parameters has been proposed, and an analysis of GaInP/GaInAs/Ge triple-junction solar cell characteristics has been carried out. It has been shown that up to the sunlight concentration ratios, at which the efficiency maximum is achieved, the results of calculation of dark and light I–V curves by the segmental method fit well with the experimental data. An important consequence of this work is the feasibility of acquiring the resistanceless dark and light I–V curves, which can be used for obtaining the I–V curves characterizing the losses in the transport part of a solar cell.