The document discusses a high-voltage compliant microelectrode array driver for neural stimulation. It describes how a fundamental component is a high-voltage switch, which can be implemented using an n-type or p-type MOSFET operated in either cutoff or ohmic region. The switch is characterized by a fixed linear transconductance that is strongly signal-dependent and expressed through an equation involving factors like electron/hole mobility, gate oxide capacitance, transistor dimensions, power supply voltage, and input signal.