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ANALOG IO TEST CHIP VALIDATION
SMIT PATEL
13MECC12
INTERN AT
ST MICROELECTRONICS
INTERNAL GUIDE,
DR. TANISH ZAVERI
EXTERNAL GUIDE,
MR. NITIN BANSAL
INSTITUTE OF TECHNOLOGY
NIRMA UNIVERSITY
PRE-SILICON IOS VALIDATION ON
DIFFERENT IP’S
2PHASE - 1
INDEX
• Area Introduction
• Motivation
• Problem Statement
• Objective
• Background study
• Methodology
• Work & Results
• Conclusion
• References
3
AREA INTRODUCTION
4
• A chip can be divided into two main parts,
1) Core
2) I/O's
• Core is main circuit which perform the logic for which chip is
designed
• Normally core operates at Vdd level of 1.2V
• If any of incoming signal is having voltage level more then core
level then it may lead to failure of core
• Here, comes the need and importance of I/O integrated with
core section
MOTIVATION
• Motivation behind Input-Output(IO) Test-Chip validation is to
verify the accurate functioning of IO rings
• IO rings are the communication medium between the external
world and inside core(processors, analog IPs)
• Inside Core, IPs run on different specification voltages
• What happens if we apply high voltage ?
• Current technologies in IO pads
• Hence, proper functioning of IO ring must be checked and
verified
5
PROBLEM STATEMENT
• Plethoric behavior of external world to IPs may be
unpredictable with respect to inside core in order to analyze the
behavioral current flowing to core we should validate the IO
ring
• So we should analyze the characteristics of IO ring
7
OBJECTIVE
• The objective is to design, simulate and characterize the Input
Output analog library cells in different technologies in order to
meet the desired specifications
• Ensuring proper signal routing and placement from the inside
low voltage level core signals to the off-chip higher voltage
level Input Output bidirectional peripherals
8
IOS - ROLE AND PLACEMENT
• IOs are placed on the periphery of the chip
• IOs are elements which interface the core signal to the off-chip
world
• Any input signal which comes from the off-chip environment
into the chip, must be checked by IO circuitry
• If IO finds any signal defying the behavior expected from it, it
modifies the signal for proper functioning of the chip
• IOs also scan outgoing signals from core to off-chip
environment
• Efficiency of the chip is determined by the functionality of IOs
9
STANDARD IO-CHIP COMPONENTS 10
• Input Buffers
• Output Buffers
• Bidirectional Buffers
• Supply cells
• Leaf cells
• Fillers and Corner cells
• Filler-cuts
BI-DIRECTIONAL BUFFER
11
• A Bidirectional Buffer consists
- Input Buffer (also known as Receiver)
- Output buffer (also known as Driver)
- Pull-up / Pull-down logic
- ESD protection circuitry
• A Bidirectional buffer can be used in both ways i.e. signals
from off-chip environment can interact with the core chip
and vice versa
Core side
INPUT RECEIVER BLOCK
• An Input buffer (also known as Receiver) receives and makes
the signal adaptable for the core logic
• Input buffers couples the signal
- High voltage ‘Vdde’ Lower voltage ‘Vdd’
12
OUTPUT DRIVER BLOCK
• Output buffers amplifies the signal
- Lower voltage level ‘Vdd’ Higher voltage level ‘Vdde’
• To limit switching noise (L*dI/dt), for all the buffers, the
impedance of the driver is controlled through control bits which
are generated by compensation cell
13
MODES OF OPERATION OF A BIDIRECTIONAL
CELL
• Normal Mode
• Test Mode
• IDDQ Mode (no static current dissipation in the cell)
• IO-OFF Mode
• CORE-OFF Mode
• Power down / Stand-by Mode
14
IO DESIGN AND CHARACTERIZATION FLOW
15
My work
ELDO SIMULATION FLOW
16
IOSIM WRAPPER OVER ELDO 17
IOSIM
OUTPUT
ELDO
Netlist (circuit
description
file – ex.
SPICE.spi)
Command
file (for
parameter
extraction –
ex.
out_tran_1v
8)
Lib.spec (for
PVT
measures)
Reference_
model.spec
(for library
inclusion
and flags)
Simulation
log file
(.chi)
INPUT
Set_prod_lin
ux (for
sourcing tool
environment)
Error /
Logfile
(.log)
Simulatio
n
waveform
file (.wdb
or .cou)
Simulatio
n results
file (.aex)
Result
database
(.rdb)
• To run ELDO simulations in parallel, a wrapper is build i.e.
IOSIM
CMOS INVERTER
18
Schematic of CMOS
Inverter
Output waveform of CMOS
Inverter in Transient analysis
DESIGN OF BI-DIRECTIONAL CELL
19
IO RING OF HSICUSB TEST-CHIP
20
Bi-Directional
Loops
Supply Cells
• Repeated Bi-Directional
cells give rise to an IO
ring structure
LAYOUT OF HSICUSB IO RING
21
Layout using metal sheets
• After drawing the layout of IO
Ring, DRC is performed for the
entire chip
• After DRC, parasitic extraction
layout view is generated
WAVEFORMS OF HSICUSB IO RING
22
MODE = Test Mode
Frequency 1 = 1KHz
Frequency 2 = 2KHz
Output freq. = 2KHz
MODE = Normal Mode
Frequency 1 = 1KHz
Frequency 2 = 2KHz
Output freq. = 1KHz
RESULTS OF HSICUSB IO RING
Normal Mode IO-OFF Mode CORE-OFF Mode
EXTRACT for TRANSIENT ANALYSIS
TEMPERATURE = 2.5000 E + 01
I_VDDE1V8_CUT = 1.87E-08 A
I_VDDE1V8_CUT1 = 8.96E-08 A
I_VDDE = 2.95E-06 A
I_VDD = 8.13E-07 A
I_GNDE = 9.97E-06 A
I_VDDE1V8 = 5.61E-06 A
I_VDDE1V8_CUT = 1.49E-18 A
I_VDDE1V 8_CUT1 = 7.12E-15 A
I_VDDE = 2.39E-11 A
I_VDD = 7.16E-07 A
I_GNDE = 1.57E-09 A
I_VDDE1V8 = 1.31E-10 A
I_VDDE1V8_CUT = 1.87E-08 A
I_VDDE1V8_CUT1 = 1.02E-07 A
I_VDDE = 1.18E-06 A
I_VDD = 4.06E-10 A
I_GNDE = 4.07E-06 A
I_VDDE1V8 = 1.16E-06 A
23
• Following are Leakage Current analysis at different PVT Corner
- Process = Typical
- Voltage = 1V8v
- Temperature = 25 C
SILICON TESTING WITH JTAG 24
• To configure the chip for testing
• Three IO Pins should be configured with TDI,TCLK & TE.
• Number of Bits in TDI & TCLK will vary from chip to chip.
• Testing has to be started when TE goes low(only then Control
signals will go to the IO/Core cells)
RESULTS OF JTAG BLOCK
25
• Specifications of the waveforms
- Voltage Level- IO HV Supply
- Bit Period of TDI = 2*(Bit Period of TCLK)
- Every transition(Zero to One or vice versa) in TDI should be at the
negative edge of the TCLK(One to Zero).
SCHEMATIC OF REFCOMPENSATION 26
Bi-Directional
Loops
Compensation Cell
JTAG Block
• IO Ring with JTAG Block and
COMPENSATION Cell
• Using JTAG we can be able to
add more Bi-Directional cells
• To limit switching noise, for all
the buffers, the impedance of
the driver is controlled through
control bits which are generated
by compensation cell
RESULTS OF REFCOMPENSATION
Leakage
Currents in
Supply Cells
REFCOMPENSATION1V83V3
EXTRACT for TRANSIENT ANALYSIS
TEMPERATURE = 2.5000 E + 01
DEFAULT MODE NORMAL MODE
(TQ = 0)
IO-OFF
MODE
CORE-OFF MODE IDDQ MODE (TQ
= 1)
Supply levels HV LV HV LV LV HV LV HV LV
GNDBGCO
MP (A)
1.43E-08 3.34E-09 1.50E-04 1.75E-04 1.62E-13 1.18E-08 1.18E-08 1.05E-07 3.01E-06
VDDE3V3_
COMP (A)
8.52E-05 7.74E-05 1.04E-03 8.54E-04 6.48E-12 1.00E-04 1.23E-04 8.56E-05 1.01E-04
GNDV3_CO
MP (A)
8.21E-05 9.30E-06 9.62E-04 6.87E-04 5.78E-07 3.13E-04 5.44E-04 8.23E-05 1.17E-05
VDDE3V3 (A) 4.00E-04 1.15E-04 1.74E-03 1.82E-04 2.18E-10 5.15E-04 7.23E-04 4.05E-04 1.27E-04
GNDE (A) 4.04E-04 1.83E-04 1.68E-03 1.85E-04 5.02E-09 3.02E-04 3.02E-04 4.09E-04 2.14E-04
VDD (A) 7.07E-05 5.52E-05 7.99E-05 6.56E-05 5.39E-05 3.80E-09 3.80E-09 6.98E-05 5.48E-05
27
• Following are Leakage Current analysis at different PVT Corner
HV = High supply (3.3v), LV = Low supply = (1.8v)
CHARACTERIZED LIBRARIES AND TECHNOLOGIES
28
TECHNOLOGIES USED – 5 JTAG
CMOS28FDSOI CMOS028 CMOSM40 CMOSM55 CMOS28FDSOI
LIBRARIES WORKED ON – 9
PROG1V8FAST PROG1V8FAST
IO_CUP_3V35V0_LS_GO
HV_7M4X0Y2ZLB
IO_CUP_TRIPPLEPROG
5V0_LH_GOHV_6M4X0Y
1ZLB (WORKING)
C28SOI_IO_EXT_3V3SF_
REFCOMPENSATION1V8
3V3_EG_UM
TESTMUX1V8
3V3SF_SRCNHS3V3
3V3SF_I2C3V3
I2C1V8FS
IO CELLS CHARACTERIZED - 10
BDPROG8SCARUD14KQ
PCKRH_FAST_SF_1V8
BDPROG6SCARUD14KQ
PCKRH_FAST_SF_1V8
BDPROG05S2M8F16FSC
ATARUDQ_5V03V3_65U
BDPROG05S2M8FSATA
RUDQ_5V0_65U_LIN
(WORKING)
C28SOI_IO_EXT_3V3SF_
I2C3V3_LR_EG
BD8SCARUDQPCZ_SF_1
V8_FC_LIN
BDPROG6SCARUDQPC
KRH_FAST_SF_1V8_FC
C28SOI_IO_EXT_3V3SF_
I2C_5VFSFT_LR_EG
BD8SCARUDQP_HS_3V3
SF_3V3_FC
BDPROG6SCARUQPCK
RH_FAST_SF_1V8_FC
I2C_EXT_3V3SF_3V3FS_
FC_LIN
I2CRZ_SF_1V8
CONCLUSION
• This project work has helped me in understanding verification
of Analog IO Ring
• This project has also helped me to get knowledge of different
types of IO Designs
• Expose to different kinds of tools like CADENCE Virtuoso,
ELDO, IOSIM
• By validating the IO Ring characteristics we are protecting our
core and its IPs to perform safe in its safe functional mode.
29
REFERENCES
[1] Vikas Chaudhary, Design of I/O elements, Central Research and Development,
STMicroelectronics, Greater Noida, India
[2] MOHD. RIZVI, FUNDAMENTALS of IOs Central Research and Development at ST
Microelectronics Noida, India
[3] Testchip Basics company presentation on basics of IO testchip, ST Microelectronics,
Greater Noida
[4] http://lsmwww.epfl.ch/Education/CadenceTutorial/explanations/schematic.html
[5] http://ipdf.dlh.st.com/ftmweb/iflweb/TRAINING/modules/MODULE1/ Module1.htm
31
POST-SILICON IOS VALIDATION OF
OSCILLATOR IP’S USING AUTOMATION
PHASE - 2
INDEX
• Introduction
• Objective
• Background
• Methodology
• Test Results
• Conclusion
34
INTRODUCTION
• Integrated Circuit development cycle involves a variety of
sequential stages which are equally essential to its successful
completion
• Post-Silicon Validation is one such process which is aimed at
verification of the IC’s performance at silicon level before mass
production
• Automation is employed to complete the validation process in
limited time frame due to repeatability of tests
35
OBJECTIVE
• Thorough understanding of the Post-Silicon Validation Process
Validation of analog IP’s received by design teams for hands-on
experience
• Analyzing and finding problems in current methodologies
• Proposing solutions to any short-comings in validation process
• Implementing feasible solutions to any problems
36
WHAT IS VALIDATION?
• Performing a number of requested tests to check the
performance of a device or chip at various operating conditions
37
Test
1
Test
2
Test
3
Validation
Report
PURPOSE OF VALIDATION?
• Providing feedback to a designer for his/her circuit’s
functionality at operating conditions
38
Design Review Output
Validation
APPROVAL
REVIEWAL
WHY AUTOMATION?
• Automation employed due to repeatability of tests on several
dies
• Reduces test time considerably
• Reduces human-led errors
• Promises reproducibility of test results
39
TEST RUN THROUGH AUTOMATION
40
0
10
20
30
40
50
60
70
Die Sorting Threshold Operating Mode
Measurements
9
24
61
2
10
16
Timeinhrs
Tests
Test time reduction using Automations
Manual Automated
41
Test Request
by Design
Team
Fab
Test
Chip
Package
Test Board
Selection
Test Requirements,
Specifications and CAD
simulation data
Test Set-Up
• Equipment Selection
Test Configurations
Automation Needs and
Feasibility
Creation of
Input Daffy
Existing
Automations
sufficient
Develop/Modify
Automations
Perform
required Tests:
•Die Sorting
•DC
•Timing
Test
Results
Blank
Test
Report
Silicon
vs. CAD
Analysis
Publish
Validation
Report
NO
NO
YES
YES
VALIDATION FLOW
TEST SETUP
42
TEST BOARD
43
TYPES OF TEST PERFORMED
• Functionality Test
• Selection of Die
• DC current consumption
• Normal Dissipation
• IO-Off Dissipation
• Core-Off Dissipation
• IDDQ Dissipation
• Input Threshold Measurements
• Compensation Code
• Reference voltage measurement
44
FLOWCHART FOR DC CURRENT MEASUREMENTS
45
46
FLOWCHART FOR TRANSIENT MEASUREMENTS
TEST BOARD SETUP
47
CONT. 48
AUTOMATION PROCESS
49
CONT. 50
CONT. 51
CONT. 52
53
RESULTS
54
CONT.
55
CONT.
56
CONCLUSION
• This project work has helped me in understanding IO Ring
validation of Analog IP’s
• This project has also helped me to get knowledge of different
types of IO Designs
• Expose to different kinds of automation like IO Validator,
Oscillator Validator, etc.
• By validating the IO Ring characteristics we are protecting our
core and its IPs to perform safe in its safe functional mode.
REFERENCES
[1] Stanley L.Hurst, “VLSI TESTING – digital and mixed analogue/digital techniques”,
IEE Circuits, Devices and Systems, Series 9
[2] Hung-Chih Chiang, “Introduction to System IC Design Flow”
[3] Agilent Technologies, “3458A & DSA 90804A Instrument Manuals and Data Sheets”
[4] Keithley Instruments, “DMM 2700 & 2400 Instrument Manual and Data Sheets”
[5] Thermonics, “T-2800 Instrument Manuals”
[6] Analog Design Flow, www.eda.ei.tum.de
[7] Post-Silicon Validation, www.wikipedia.org
57
Thank You
58

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Analog, IO Test Chip Validation

  • 1. ANALOG IO TEST CHIP VALIDATION SMIT PATEL 13MECC12 INTERN AT ST MICROELECTRONICS INTERNAL GUIDE, DR. TANISH ZAVERI EXTERNAL GUIDE, MR. NITIN BANSAL INSTITUTE OF TECHNOLOGY NIRMA UNIVERSITY
  • 2. PRE-SILICON IOS VALIDATION ON DIFFERENT IP’S 2PHASE - 1
  • 3. INDEX • Area Introduction • Motivation • Problem Statement • Objective • Background study • Methodology • Work & Results • Conclusion • References 3
  • 4. AREA INTRODUCTION 4 • A chip can be divided into two main parts, 1) Core 2) I/O's • Core is main circuit which perform the logic for which chip is designed • Normally core operates at Vdd level of 1.2V • If any of incoming signal is having voltage level more then core level then it may lead to failure of core • Here, comes the need and importance of I/O integrated with core section
  • 5. MOTIVATION • Motivation behind Input-Output(IO) Test-Chip validation is to verify the accurate functioning of IO rings • IO rings are the communication medium between the external world and inside core(processors, analog IPs) • Inside Core, IPs run on different specification voltages • What happens if we apply high voltage ? • Current technologies in IO pads • Hence, proper functioning of IO ring must be checked and verified 5
  • 6. PROBLEM STATEMENT • Plethoric behavior of external world to IPs may be unpredictable with respect to inside core in order to analyze the behavioral current flowing to core we should validate the IO ring • So we should analyze the characteristics of IO ring 7
  • 7. OBJECTIVE • The objective is to design, simulate and characterize the Input Output analog library cells in different technologies in order to meet the desired specifications • Ensuring proper signal routing and placement from the inside low voltage level core signals to the off-chip higher voltage level Input Output bidirectional peripherals 8
  • 8. IOS - ROLE AND PLACEMENT • IOs are placed on the periphery of the chip • IOs are elements which interface the core signal to the off-chip world • Any input signal which comes from the off-chip environment into the chip, must be checked by IO circuitry • If IO finds any signal defying the behavior expected from it, it modifies the signal for proper functioning of the chip • IOs also scan outgoing signals from core to off-chip environment • Efficiency of the chip is determined by the functionality of IOs 9
  • 9. STANDARD IO-CHIP COMPONENTS 10 • Input Buffers • Output Buffers • Bidirectional Buffers • Supply cells • Leaf cells • Fillers and Corner cells • Filler-cuts
  • 10. BI-DIRECTIONAL BUFFER 11 • A Bidirectional Buffer consists - Input Buffer (also known as Receiver) - Output buffer (also known as Driver) - Pull-up / Pull-down logic - ESD protection circuitry • A Bidirectional buffer can be used in both ways i.e. signals from off-chip environment can interact with the core chip and vice versa Core side
  • 11. INPUT RECEIVER BLOCK • An Input buffer (also known as Receiver) receives and makes the signal adaptable for the core logic • Input buffers couples the signal - High voltage ‘Vdde’ Lower voltage ‘Vdd’ 12
  • 12. OUTPUT DRIVER BLOCK • Output buffers amplifies the signal - Lower voltage level ‘Vdd’ Higher voltage level ‘Vdde’ • To limit switching noise (L*dI/dt), for all the buffers, the impedance of the driver is controlled through control bits which are generated by compensation cell 13
  • 13. MODES OF OPERATION OF A BIDIRECTIONAL CELL • Normal Mode • Test Mode • IDDQ Mode (no static current dissipation in the cell) • IO-OFF Mode • CORE-OFF Mode • Power down / Stand-by Mode 14
  • 14. IO DESIGN AND CHARACTERIZATION FLOW 15 My work
  • 16. IOSIM WRAPPER OVER ELDO 17 IOSIM OUTPUT ELDO Netlist (circuit description file – ex. SPICE.spi) Command file (for parameter extraction – ex. out_tran_1v 8) Lib.spec (for PVT measures) Reference_ model.spec (for library inclusion and flags) Simulation log file (.chi) INPUT Set_prod_lin ux (for sourcing tool environment) Error / Logfile (.log) Simulatio n waveform file (.wdb or .cou) Simulatio n results file (.aex) Result database (.rdb) • To run ELDO simulations in parallel, a wrapper is build i.e. IOSIM
  • 17. CMOS INVERTER 18 Schematic of CMOS Inverter Output waveform of CMOS Inverter in Transient analysis
  • 19. IO RING OF HSICUSB TEST-CHIP 20 Bi-Directional Loops Supply Cells • Repeated Bi-Directional cells give rise to an IO ring structure
  • 20. LAYOUT OF HSICUSB IO RING 21 Layout using metal sheets • After drawing the layout of IO Ring, DRC is performed for the entire chip • After DRC, parasitic extraction layout view is generated
  • 21. WAVEFORMS OF HSICUSB IO RING 22 MODE = Test Mode Frequency 1 = 1KHz Frequency 2 = 2KHz Output freq. = 2KHz MODE = Normal Mode Frequency 1 = 1KHz Frequency 2 = 2KHz Output freq. = 1KHz
  • 22. RESULTS OF HSICUSB IO RING Normal Mode IO-OFF Mode CORE-OFF Mode EXTRACT for TRANSIENT ANALYSIS TEMPERATURE = 2.5000 E + 01 I_VDDE1V8_CUT = 1.87E-08 A I_VDDE1V8_CUT1 = 8.96E-08 A I_VDDE = 2.95E-06 A I_VDD = 8.13E-07 A I_GNDE = 9.97E-06 A I_VDDE1V8 = 5.61E-06 A I_VDDE1V8_CUT = 1.49E-18 A I_VDDE1V 8_CUT1 = 7.12E-15 A I_VDDE = 2.39E-11 A I_VDD = 7.16E-07 A I_GNDE = 1.57E-09 A I_VDDE1V8 = 1.31E-10 A I_VDDE1V8_CUT = 1.87E-08 A I_VDDE1V8_CUT1 = 1.02E-07 A I_VDDE = 1.18E-06 A I_VDD = 4.06E-10 A I_GNDE = 4.07E-06 A I_VDDE1V8 = 1.16E-06 A 23 • Following are Leakage Current analysis at different PVT Corner - Process = Typical - Voltage = 1V8v - Temperature = 25 C
  • 23. SILICON TESTING WITH JTAG 24 • To configure the chip for testing • Three IO Pins should be configured with TDI,TCLK & TE. • Number of Bits in TDI & TCLK will vary from chip to chip. • Testing has to be started when TE goes low(only then Control signals will go to the IO/Core cells)
  • 24. RESULTS OF JTAG BLOCK 25 • Specifications of the waveforms - Voltage Level- IO HV Supply - Bit Period of TDI = 2*(Bit Period of TCLK) - Every transition(Zero to One or vice versa) in TDI should be at the negative edge of the TCLK(One to Zero).
  • 25. SCHEMATIC OF REFCOMPENSATION 26 Bi-Directional Loops Compensation Cell JTAG Block • IO Ring with JTAG Block and COMPENSATION Cell • Using JTAG we can be able to add more Bi-Directional cells • To limit switching noise, for all the buffers, the impedance of the driver is controlled through control bits which are generated by compensation cell
  • 26. RESULTS OF REFCOMPENSATION Leakage Currents in Supply Cells REFCOMPENSATION1V83V3 EXTRACT for TRANSIENT ANALYSIS TEMPERATURE = 2.5000 E + 01 DEFAULT MODE NORMAL MODE (TQ = 0) IO-OFF MODE CORE-OFF MODE IDDQ MODE (TQ = 1) Supply levels HV LV HV LV LV HV LV HV LV GNDBGCO MP (A) 1.43E-08 3.34E-09 1.50E-04 1.75E-04 1.62E-13 1.18E-08 1.18E-08 1.05E-07 3.01E-06 VDDE3V3_ COMP (A) 8.52E-05 7.74E-05 1.04E-03 8.54E-04 6.48E-12 1.00E-04 1.23E-04 8.56E-05 1.01E-04 GNDV3_CO MP (A) 8.21E-05 9.30E-06 9.62E-04 6.87E-04 5.78E-07 3.13E-04 5.44E-04 8.23E-05 1.17E-05 VDDE3V3 (A) 4.00E-04 1.15E-04 1.74E-03 1.82E-04 2.18E-10 5.15E-04 7.23E-04 4.05E-04 1.27E-04 GNDE (A) 4.04E-04 1.83E-04 1.68E-03 1.85E-04 5.02E-09 3.02E-04 3.02E-04 4.09E-04 2.14E-04 VDD (A) 7.07E-05 5.52E-05 7.99E-05 6.56E-05 5.39E-05 3.80E-09 3.80E-09 6.98E-05 5.48E-05 27 • Following are Leakage Current analysis at different PVT Corner HV = High supply (3.3v), LV = Low supply = (1.8v)
  • 27. CHARACTERIZED LIBRARIES AND TECHNOLOGIES 28 TECHNOLOGIES USED – 5 JTAG CMOS28FDSOI CMOS028 CMOSM40 CMOSM55 CMOS28FDSOI LIBRARIES WORKED ON – 9 PROG1V8FAST PROG1V8FAST IO_CUP_3V35V0_LS_GO HV_7M4X0Y2ZLB IO_CUP_TRIPPLEPROG 5V0_LH_GOHV_6M4X0Y 1ZLB (WORKING) C28SOI_IO_EXT_3V3SF_ REFCOMPENSATION1V8 3V3_EG_UM TESTMUX1V8 3V3SF_SRCNHS3V3 3V3SF_I2C3V3 I2C1V8FS IO CELLS CHARACTERIZED - 10 BDPROG8SCARUD14KQ PCKRH_FAST_SF_1V8 BDPROG6SCARUD14KQ PCKRH_FAST_SF_1V8 BDPROG05S2M8F16FSC ATARUDQ_5V03V3_65U BDPROG05S2M8FSATA RUDQ_5V0_65U_LIN (WORKING) C28SOI_IO_EXT_3V3SF_ I2C3V3_LR_EG BD8SCARUDQPCZ_SF_1 V8_FC_LIN BDPROG6SCARUDQPC KRH_FAST_SF_1V8_FC C28SOI_IO_EXT_3V3SF_ I2C_5VFSFT_LR_EG BD8SCARUDQP_HS_3V3 SF_3V3_FC BDPROG6SCARUQPCK RH_FAST_SF_1V8_FC I2C_EXT_3V3SF_3V3FS_ FC_LIN I2CRZ_SF_1V8
  • 28. CONCLUSION • This project work has helped me in understanding verification of Analog IO Ring • This project has also helped me to get knowledge of different types of IO Designs • Expose to different kinds of tools like CADENCE Virtuoso, ELDO, IOSIM • By validating the IO Ring characteristics we are protecting our core and its IPs to perform safe in its safe functional mode. 29
  • 29. REFERENCES [1] Vikas Chaudhary, Design of I/O elements, Central Research and Development, STMicroelectronics, Greater Noida, India [2] MOHD. RIZVI, FUNDAMENTALS of IOs Central Research and Development at ST Microelectronics Noida, India [3] Testchip Basics company presentation on basics of IO testchip, ST Microelectronics, Greater Noida [4] http://lsmwww.epfl.ch/Education/CadenceTutorial/explanations/schematic.html [5] http://ipdf.dlh.st.com/ftmweb/iflweb/TRAINING/modules/MODULE1/ Module1.htm 31
  • 30. POST-SILICON IOS VALIDATION OF OSCILLATOR IP’S USING AUTOMATION PHASE - 2
  • 31. INDEX • Introduction • Objective • Background • Methodology • Test Results • Conclusion 34
  • 32. INTRODUCTION • Integrated Circuit development cycle involves a variety of sequential stages which are equally essential to its successful completion • Post-Silicon Validation is one such process which is aimed at verification of the IC’s performance at silicon level before mass production • Automation is employed to complete the validation process in limited time frame due to repeatability of tests 35
  • 33. OBJECTIVE • Thorough understanding of the Post-Silicon Validation Process Validation of analog IP’s received by design teams for hands-on experience • Analyzing and finding problems in current methodologies • Proposing solutions to any short-comings in validation process • Implementing feasible solutions to any problems 36
  • 34. WHAT IS VALIDATION? • Performing a number of requested tests to check the performance of a device or chip at various operating conditions 37 Test 1 Test 2 Test 3 Validation Report
  • 35. PURPOSE OF VALIDATION? • Providing feedback to a designer for his/her circuit’s functionality at operating conditions 38 Design Review Output Validation APPROVAL REVIEWAL
  • 36. WHY AUTOMATION? • Automation employed due to repeatability of tests on several dies • Reduces test time considerably • Reduces human-led errors • Promises reproducibility of test results 39
  • 37. TEST RUN THROUGH AUTOMATION 40 0 10 20 30 40 50 60 70 Die Sorting Threshold Operating Mode Measurements 9 24 61 2 10 16 Timeinhrs Tests Test time reduction using Automations Manual Automated
  • 38. 41 Test Request by Design Team Fab Test Chip Package Test Board Selection Test Requirements, Specifications and CAD simulation data Test Set-Up • Equipment Selection Test Configurations Automation Needs and Feasibility Creation of Input Daffy Existing Automations sufficient Develop/Modify Automations Perform required Tests: •Die Sorting •DC •Timing Test Results Blank Test Report Silicon vs. CAD Analysis Publish Validation Report NO NO YES YES VALIDATION FLOW
  • 41. TYPES OF TEST PERFORMED • Functionality Test • Selection of Die • DC current consumption • Normal Dissipation • IO-Off Dissipation • Core-Off Dissipation • IDDQ Dissipation • Input Threshold Measurements • Compensation Code • Reference voltage measurement 44
  • 42. FLOWCHART FOR DC CURRENT MEASUREMENTS 45
  • 53. 56 CONCLUSION • This project work has helped me in understanding IO Ring validation of Analog IP’s • This project has also helped me to get knowledge of different types of IO Designs • Expose to different kinds of automation like IO Validator, Oscillator Validator, etc. • By validating the IO Ring characteristics we are protecting our core and its IPs to perform safe in its safe functional mode.
  • 54. REFERENCES [1] Stanley L.Hurst, “VLSI TESTING – digital and mixed analogue/digital techniques”, IEE Circuits, Devices and Systems, Series 9 [2] Hung-Chih Chiang, “Introduction to System IC Design Flow” [3] Agilent Technologies, “3458A & DSA 90804A Instrument Manuals and Data Sheets” [4] Keithley Instruments, “DMM 2700 & 2400 Instrument Manual and Data Sheets” [5] Thermonics, “T-2800 Instrument Manuals” [6] Analog Design Flow, www.eda.ei.tum.de [7] Post-Silicon Validation, www.wikipedia.org 57

Editor's Notes

  • #6: What happens if we apply high voltage ? If voltages higher than the core voltage are applied at input pad, then it may cause damage to device or failure to power up, where comes the need to interface through Ios Current technology trends demands more functionality and hence more IO pads are necessited
  • #8: in order to keep the core safe , there should be something which observes the behavior of current that is supplied to core in order to avoid the damages. To do so we have IO Rings design in between the external world and core so these leads to validate the IO design Validation and testing of the Input-Output frame functionality in terms of timing parameters, signal strength in order to meet the design specs listed below Duty cycle rise / fall times propagation delays Slew rates Hysteresis matching pull-up / pull-down resistance It also involves simulation and characterization of different technologies and their corresponding Library cells IPs ADC Crystal oscillator IO pads Voltage regulator
  • #11: Compensation cell role and definition is here -  These are cells used in the I/O periphery for the slew rate control. Compensation block has only an enable pin and the output pins. This block senses the change and generates a common code for all the slew rate controlling devices.
  • #13: ESD ESD protection is very crucial in order to save on-chip from unwanted surges that gets developed on the pins due to unprecedented external sources such as human contact, etc. with the pin An external off-chip signal can have voltage ranges much beyond and higher than the normal CMOS operating voltages, an input ESD (electrostatic discharge) protection is required for the buffers. After passing through the ESD Protection block, the signal is subjected to the Input buffer These largely accumulated charges can destroy and hamper the normal functioning of transistors, therefore a mechanism is needed which can quickly and effectively discharge unwanted charges Schmitt Sometimes an input signal to a digital circuit doesn't fit directly as per the digital signal constraints in a given specified voltage range. Due to unwanted jitters, the input signal may have slow rise and/or fall times, delayed input response, or may have acquired some noise that could be sensed by further input circuitry Schmitt trigger has an inverter-like voltage transfer characteristics curve, but with two different logic threshold voltages for increasing and decreasing input signals. With this noise cancellation property, the Schmitt Trigger circuit can be utilized for the detection of low-to-high and high-to-low switching events even in noisy environments Level shifter I/O buffers are operated with different voltage levels than the core voltage level, so in order to shift the voltage level up or down as per the signal routing from core to I/O or vice-versa, special type of level shifter circuits are implemented for low power and proper functioning of the circuit The dc level converter needs some design consideration in the sense that it has to prevent the static power dissipation and leakage current A simple cross coupled inverter is used as level converter in order to prevent any unnecessary static current path when both PMOS and NMOS are simultaneously ON
  • #14: To limit switching noise (L * dI/dt), for all the buffers (Slow / Medium / Fast / Very Fast), the impedance of the driver is controlled through control bits which are generated by compensation cell The impedance control feature makes the output current drive relatively constant and helps to match output impedance of the bidirectional cells with transmission line (or interconnect) across variations of temperature, power supply and process The drive capability of an output buffer should be such that it can achieve the pre-requisite rise and fall times under varying capacitive load conditions. Normally the drive capability of I/O buffers is as high as 8mA or 9mA Test pin Test-pin block is used at the output section of the core chip and is connected between the core and pre-driver (where, pre-driver block is basically used for slew rate control and corresponding rise and fall time calculation) The Test-pin block consists of a multiplexer, to select the test mode or normal operating mode, a series of inverters to generate two signals NIN and PIN at the output of this block for slew rate control measurements The signal at NIN rises faster than PIN while signal at PIN falls faster than NIN Pre-Driver A fast transition of the signal at the output pad tends to introduce frequencies in Ultra High Frequency (UHF) range into the off chip load being fed. This sometimes becomes undesirable in applications such as if the signal is fed to a Television chip, cellular phones, radios, etc. The signals in the UHF range appear as noise to the driving section A pre-driver block is used for controlled switching of current signal at the output pad, thereby acting as an active slew rate control circuitry. A controlled switching results in reduced dI/dt power supply noise. The source of this noise is the inductive voltage drop, i.e. V = L(dI/dt) at the power rails where inductance is introduced by the package pins   This Pre-driver block acts as Slew rate control circuits which artificially limit the rate of current switching thereby limiting the UHF interference. Basic approach for achieving controlled slew rate is to break the output driving transistors into different parallel transistors and switch the stages sequentially one after the other with some delay Output driver An Output buffer must have sufficient drive capability to achieve adequate rise and fall times into a given capacitive load. To achieve a specified functionality of the output buffer, different types of output stages are used at the output section Push Pull stage Open Drain output stage Usually, a plain inverter stage at the output of buffer stages is avoided. The Miller capacitance associated between the Gates (G) and the Source (S)-Drain (D) diffusion regions of ‘p’ and ‘n’ transistors can result in oscillations at the output in series with the load inductance causing Short circuit power dissipation Output stage: A push pull stage consists of p and n transistors at the output pad for sourcing and sinking respectively , where each of transistors is controlled through a different chain of tapered inverters fed after buffering Often the tristated output is put to a particular logic level instead of letting the bus float .Either logic low or high can be made at the output using the pull up or pull down transistors Normally the NMOS transistor is used for pull down and PMOS transistor for pull up