CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications

International Journal of Electrical and Computer Engineering (IJECE)
Vol. 8, No. 2, April 2018, pp. 946 – 953
ISSN: 2088-8708 946
Institute of Advanced Engineering and Science
w w w . i a e s j o u r n a l . c o m
CMOS Temperature Sensor with Programmable Temperature
Range for Biomedical Applications
Agung Setiabudi1
, Hiroki Tamura2
, and Koichi Tanno3
1
Department of Materials and Informatics, University of Miyazaki, Japan
2
Department of Environmental Robotics, University of Miyazaki, Japan
3
Department of Electrical and System Engineering, University of Miyazaki, Japan
Article Info
Article history:
Received Dec 11, 2017
Revised Jan 20, 2018
Accepted: Feb 19, 2018
Keyword:
Biomedical Application
Programmable
Temperature Sensor
Digital
CMOS
Low-power
Low-voltage.
Abstract
A CMOS temperature sensor circuit with programmable temperature range is proposed for
biomedical applications. The proposed circuit consists of temperature sensor core circuit
and programmable temperature range digital interface circuit. Both circuits are able to be
operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion
region of MOSFETs. The proposed digital interface circuit converts current into time using
Current-to-Time Converter (ITC) and converts time to digital data using counter. Tempera-
ture range can be programmed by adjusting pulse width of the trigger and clock frequency
of counter. The proposed circuit was simulated using HSPICE with 1P, 5M, 3-wells, 0.18-
µm CMOS process (BSIM3v3.2, LEVEL53). From the simulation of proposed circuit,
temperature range is programmed to be 0 °C to 100 °C, it is obtained that resolution of the
proposed circuit is 0.392 °C with -0.89/+0.29 °C inaccuracy and the total power consump-
tion is 22.3 µW in 25 °C.
Copyright © 2018 Institute of Advanced Engineering and Science.
All rights reserved.
Corresponding Author:
Koichi Tanno
Department of Electrical and System Engineering, University of Miyazaki
1-1 Gakuenkibanadai-nishi, Miyazaki, 889-2192, Japan
tanno@cc.miyazaki-u.ac.jp
1. INTRODUCTION
Engineering is an innovative field that its origin ideas leading to everything, including biology and medical
area. Application of engineering in biology and medical area is then called biomedical engineering. The purpose
of this field is combining the design and problem solving skills of engineering with medical and biology sciences to
advance health care treatment, including diagnosis, monitoring, and therapy [1]. In the recent years, there is a lot of
research focus on biomedical engineering. This topic is becoming interesting and challenging due to the increase of
system complexity, human population and its distribution.
One of the most important components in biomedical engineering is sensor. This component is very impor-
tant because it is directly connected to physical phenomenon [2, 3]. In many biomedical applications, sensor plays a
crucial role to collect data from many objects such as human body temperature, environment humidity and oxygen
levels in the air. The often utilized sensor in biomedical applications is temperature sensor, because temperature is
a highly important parameter to monitor, identify, or control many conditions in biomedical field, such as diagnos-
ing human disease, temperature monitoring in operating rooms and preventing bacteria growth in some places. By
knowing the useful of temperature sensor in many biomedical applications, the availability of a temperature sensor
which can be used in various biomedical applications is highly recommended. The problem is different biomedical
application has different temperature range to be measured. It means that the sensor must have wide temperature
range. However, wide temperature range causes the resolution of its digital data decreases. To keep the resolution
high, high-bit analog to digital (ADC) must be applied. Nevertheless, it will decrease the speed and increase the
power consumption. Furthermore, in biomedical applications, not only high sensitivity temperature sensor is needed
but also low voltage and low power temperature sensor is strongly required [4], [5], [6].
A low power and low voltage temperature sensor has been proposed and reported [7], [8]. This sensor in
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Institute of Advanced Engineering and Science
w w w . i a e s j o u r n a l . c o m
, DOI: 10.11591/ijece.v8i2.pp946-953

IJECE ISSN: 2088-8708 947
general achieves low power consumption, but it has small sensitivity. The other high sensitivity temperature sensors
are also proposed [9], [10]. However, these sensors are not low voltage and it consumes high power. The other
problem is that many conventional on-chip temperature sensor circuits use BJT (Vbe) to sense temperature [4], [9],
[11], [12]. The problem of BJT is not able to be implemented in the same chip in many standard CMOS processes.
This means that cost of fabrication will increase. The last problem is that many cores of temperature sensor circuits
use external bias circuits or high value resistor [8], [9], [13]. These require large chip areas. A low voltage and low
power temperature sensor circuit with digital output for health care monitoring system has been proposed in [14].
This sensor can achieve low voltage, low power, high sensitivity and high resolution. However, this sensor is special
for health care monitoring system whose temperature range only 33 °C to 45 °C, and it can not to be used for other
biomedical applications with different temperature range.
This paper proposes a new temperature sensor circuits based on previous work [14] with addition of pro-
grammable temperature range digitalization. In this paper, the analysis of the circuits, simulation results and the
measurement of fabricated temperature sensor core are reported in detail. This paper is organized as follows. The
previous research and improvement are presented in Sect. 2. In Sect. 3, the simulation results of the designed circuit
and measurement of fabrication temperature sensor core are presented. Finally, Sect. 4 concludes this paper.
2. PREVIOUS RESEARCH AND IMPROVEMENT
In this section, the previous research [14] and its improvement are presented in detail. Fig. 1 shows the
block diagram of the proposed temperature sensor in previous research. This proposed temperature sensor consists
of some sub circuits: sensor core circuit [3], voltage to current converter (VIC) circuit, 1/x circuit, current to time
converter (ITC) circuit [15], and counter.
Figure 1. Block diagram of the proposed integrated temperature sensor with digital output
2.1. Temperature Sensor Core
Figure 2 shows the temperature sensor core circuit. The temperature sensor core implementation consists of
sensor block and start-up block. The start-up block (Ms1, Ms2 and Ms3) is circuit to force turn on the sensor block,
and this block does not affect the output voltage. The sensor block is constructed using M1 - M5. Where, M1, M2 and
M3 are operated in weak inversion region, whereas M4 and M5 can be operated in both weak and strong inversion
region. Ids of the MOSFET operate in the weak inversion region is represented by the following equation.
Ids = I0
W
L
exp
Vgs − Vth + ηVds
nVθ
1 − exp
−Vds
Vθ
(1)
I0 = 2nµCoxV 2
θ (2)
Vθ =
k
q
Tk (3)
n = 1 +
Cd
Cox
(4)
Where Vθ is the thermal voltage, k(= 1.38 × 1023
J/K) is the Boltzmann’s constant, q(= 1.60 × 1019
C) is
the electron charge, TK is the absolute temperature, n is slope factor, η is DIBL (Drain Induced Barrier Lowering)
coefficient, µ is carrier mobility, Cd is capacitance of the depletion layer, Cox is capacitance of the oxide layer.
In (1), if Vds ≥ 4Vθ, 1 exp(Vds/Vθ) is satisfied, as the results exp(Vds/Vθ) can be ignored. Furthermore,
because it is well-known that ηVds is small value, (VgsVth) ηVds can be satisfied. From these conditions, (1) can
be rewritten to (5).
Ids = I0
W
L
exp
Vgs − Vth
nVθ
(5)
CMOS Temperature Sensor with Programmable Temperature Range for Biomedical ... (Agung Setiabudi)

948 ISSN: 2088-8708
(a) (b)
Figure 2. Temperature Sensor: (a) Core circuit, (b) Cascade connection of temperature sensor core
VP T AT 1 = nVθ ln
W2/L2
W1/L1
·
I1
I2
+ Vth1 − Vth2 (6)
And the threshold voltage with the body effect of MOSFET is generally given by (7).
Vth = Vth0 + γ |2ΦF + Vsb| − |2ΦF | (7)
Where Vth0 is the zero-bias threshold voltage, γ is the body effect coefﬁcient, 2ΦF is the surface potential parameter.
If Vsb is small enough, (7) can be approximated as follows.
Vth ≈ Vth0 + γ
Vsb
2
√
2ΦF
(8)
From Fig. 2 (a) it can be known that Vsb1 = 0 and Vsb2 = VP T AT 1, then VP T AT 1 can be expressed as by (9)
VP T AT 1 =
nVθ ln W2/L2
W1/L1
· I1
I2
1 + γ 1
2
√
2ΦF
(9)
It is assumed that γ = 0.61 and 2ΦF = 0.7, the denominator of (9) is calculated as follows
1 + γ
1
2
√
2ΦF
= 1.365 ≡ n (10)
Slope factor n is known to be a value of approximately 1.5, therefore, it can be considered that n’ is relatively close
to the value of n. As a result, VP T AT 1 can be expressed by equation (11).
VP T AT 1 =
n
n
Vθ ln
W2/L2
W1/L1
·
I1
I2
≈ Vθ ln
W2/L2
W1/L1
·
I1
I2
≈
k
q
ln
W2/L2
W1/L1
·
I1
I2
TK (11)
From (11), it can be found that VP T AT 1 of the proposed circuit is directly proportional to TK. Moreover, it could be
understood that the output voltage of Fig. 2 is proportional to absolute temperature.
The sensitivity of the sensor can then be increased using cascade connection of the circuit. Fig. 2 (b) shows
the cascade connection of circuit Fig. 2 (a). Using (11), VP T AT n of Fig. 2 (b) is as follows.
VP T AT n =
k
q
ln
W12/L12
W11/L11
·
I11
I12
TK + VP T AT n−1 (12)
Using (11) and (12), VPTAT2 is then given by
VP T AT n =
k
q
ln
W2/L2
W1/L1
·
I1
I2
+ . . . +
W12/L12
W11/L11
·
I11
I12
TK (13)
From (13), since the output voltage can be expressed by summation of the logarithmic term, this method can be used
to increase sensitivity effectively.
IJECE Vol. 8, No. 2, April 2018: 946 – 953

IJECE ISSN: 2088-8708 949
2.2. Voltage to Current Converter (VIC)
Figure 3 shows Voltage to Current Converter (VIC). From the ﬁgure it can be inferred that Vm = Vin, and
hence the following equation can be obtained.
IR =
Vin
R
(14)
IR is then copied by two current mirrors (Mvi1, Mvi3, Mvi4, and Mvi5) to IP T AT . If the ratio of W/L between Mvi1
Figure 3. Voltage to Current Converter (VIC)
and Mvi3 are m and n, and Mvi4 and Mvi5 are identical, then the following equation can be obtained.
IP T AT =
n
m
Vin
R
(15)
2.3. 1/x Circuit and Current to Time Converter (ITC)
Figure 4 shows the 1/x circuit and ITC. The 1/x circuit is formed using Mt1, Mt2, Mt3, and Mt4 which are
operated in weak inversion region. Based on translinear principle in weak inversion region Ia can be given by the
following equation.
Ia =
I2
ref
IP T AT
(16)
Where Iref is current source which have no temperature dependency, Vb is supplied by reference voltage circuit, and
IP T AT is the output current of voltage to current converter. The temperature dependence of Ia is very small because
it utilizes translinear principle.
Figure 4. Current to Time Converter (ITC)
The operating principle of ITC could be described as follows, When Vtgr shown in ITC circuit is low, Mx3,
Mx4, and Mx5 are OFF, and the circuit is in the idle mode. Therefore, Vp reaches Vdd, as the result, Tout becomes
Low. When a short single pulse is applied to the gate of Mx5, not only Mx5 but also Mx3 and Mx4 become ON,

950 ISSN: 2088-8708
because Vp becomes Low. As the result, Ia flow in C, and C store the charges that are proportional Ia. During this
period, Tout is high. The capacitor C is continuously charged, and Vp is increasing. When Vp reaches the threshold
voltage of Inv1 (Vinv1), Tout is low, Mx3 and Mx4 become OFF and Mx2 becomes ON, respectively. Therefore, the
charge of C is discharged through Mx2, and then the circuit returns to the idle mode. Using (16), Tout can be given
by
Tout =
CVinv1
I2
ref
IP T AT (17)
From (17), it can be inferred that Tout is proportional to IP T AT . Tout can be converted to the digital value
by counting up the period of high level in Tout by a counter.
2.4. Programmable Temperature Range Digitalization
In the sub section 2.3 it has been explained that digital value of the measured temperature can be obtained
by counting up the high level period of Tout by a counter. However, if Tout is directly connected to counter, it will be
ineffective. Because it is known from equation (17) that Tout is proportional to absolute temperature. It means that
the high level of Tout will appear as far as the temperature is larger than absolute zero. In the other hand, it is well
known that in the biomedical applications, the measured temperature is much higher than absolute zero, for example
the critical human body temperature is 35 °C (hypothermia) to 41.5 °C (hyperpyrexia). Thus, if Tout is directly
connected to counter, the temperature range of digital conversion result will be difficult to be adjusted. Moreover,
the digital conversion will not reach high resolution.
In Tout-counter direct connection, the temperature range can be adjusted using clock frequency of the
counter. The higher clock frequency of counter, the more narrow temperature range that can be convert to digital
data. Oppositely to the temperature range, the resolution of digital data is higher. However, for narrow temperature
range biomedical applications, Tout-counter direct connection is still not effective way to be used. Because Tout
pulse width is start to appear right after absolute zero temperature, and increases proportionally as temperature in-
creases. Therefore, if the minimum temperature of the biomedical applications is much larger than absolute zero, the
unnecessary conversion will exist. This problem will also make the adjustment difficult, because the counter will be
overflow many times before start to converts desired Tout pulse width.
Figure 5 shows the desired conversion and unnecessary conversion in Tout pulse width. To make easier
temperature range adjustment and more effective conversion, unnecessary conversion must be eliminated. In other
word, the counter counting up only in desired conversion region in Tout pulse width. To perform this function, the
connection between Tout and counter is modified. This architecture is shown in Fig. 6.
Figure 5. Desired conversion in Tout pulse width Figure 6. ITC-Counter connection architecture
Using architecture in Fig. 6, the temperature range can be programmed or adjusted not only by clock
frequency of the counter but also by pulse width of the trigger (Vtgr). Since Vtgr is connected to Rst using an
inverter, the counter will be in reset condition and it does not count up as far as the Vtgr is high. Thus, the conversion
only in desired temperature range can be performed by keeping high Vtgr from t0 to t1 shown in Fig. 5. The pulse
width of Vtgr is written in equation (18). The clock frequency of the counter then can be calculated using equation
(19).
Vtgr P W = t1 − t0 (18)
fclk =
2N
− 1
t2 − t1
(19)
Where t1 is pulse width of minimum temperature in temperature range, t2 is pulse width of maximum
temperature in temperature range, and N is resolution of the counter (bit). Generating pulse and clock with various

IJECE ISSN: 2088-8708 951
width and frequency is an easy thing that can be performed in programmable devices, like microcontroller and
microprocessor. In other word, the temperature range of the proposed temperature sensor is easily programmable, so
that it can be used in various biomedical applications.
3. SIMULATION RESULTS AND MEASUREMENT OF FABRICATED TEMPERATURE SENSOR CORE
The performance of the proposed circuit was evaluated using HSPICE with 1P, 5M, 3-well, 0.18-m CMOS
process (BSIM3v3.2 LEVEL53). All simulations use 1.0 V supply voltage. Figure 7 shows the simulation result of
sensor core circuit in the temperature range of -40 °C to 160 °C. VP T AT 1 is output of single sensor core, and VP T AT 2
is the output of cascade connection of two sensor cores. From this simulation, it was obtained that sensitivity of single
sensor core is 0.392 mV/C with 0.78 % nonlinearity. This sensitivity could be increased using cascade connection
like shown by VP T AT 2, its sensitivity is 0.783 mV/°C, with 0.89 % nonlinearity.
Figure 7. VP T AT -Temperature characteristic Figure 8. Measurement result of fabricated sensor core
Figure 9. Inaccuracy of fabricated sensor core Figure 10. Pulse width-temperature characteristic
In order to verify the performance of temperature sensor core, this temperature sensor core is fabricated
using 0.6 µm CMOS process. Figure 8 shows the average measurement results of 10 different chips. From this
ﬁgure it can be known that the output voltage of the temperature sensor core is proportional to temperature. The
average sensitivity of 10 measured chips is 0.8343 mV/°C. Figure 9 shows the accuracy of fabricated temperature
sensor core. From this measurement it was obtained that its inaccuracy is -1.144/+1.059 mV or 2.70% nonlinearity.
Figure 10 shows the relationship between temperature and pulse width. In these simulations, temperature

952 ISSN: 2088-8708
Table 1. A comparison of the main performance parameters of temperature sensor circuit
Parameter This work [4] [5] [16] [17] [18]
Power Supply(V) 1.0 3.3 0.5, 1.0 2.2 - 3 3.3 1.0
Power consumption(µW) 22.3 429 0.119 10 - 27 10 25
Range (°C) programmable -50 to 125 -10 to 30 10 to 80 0 to 100 50 to 120
Inaccuracy (°C) -0.98 to +0.29 -0.5 to +0.5 -0.8 to +1.0 -1.8 to +1.0 -0.7 to +0.9 -1.0 to +0.8
Process (µm) 0.18 0.5 0.18 0.35 0.35 0.09
was changed from -40 °C to 160 °C in step of 10 °C. As a result, it was obtained that the pulse width was proportional
to temperature with 0.276 µs/°C sensitivity and 2.14 % nonlinearity. Based on the data from these simulations,
temperature range programmability of this proposed circuit is veriﬁed by programming its temperature range to be
0 °C to 100 °C. Using equations (18) and (19) the pulse width of Vtgr and clock frequency of the counter (CP) are
70.9 µs and 9.59 MHz, respectively.
Figure 11. Dout-temperature characteristic Figure 12. Inaccuracy of the proposed temperature sensor
Figure 11 shows digital output of the simulation result after the temperature range of the sensor is pro-
grammed to be 0 °C to 100 °C. From the simulation it was obtained that digital code Dout is proportional to
temperature. The digital code of this simulation was 0 to 255. This means that 1 LSB is equal to 0.392 °C. Figure 12
shows the accuracy of the proposed integrated temperature sensor circuit. The accuracy measurement was done using
two calibration points (0 °C and 100 °C). From this measurement it was obtained that inaccuracy of the proposed
circuit is -0.98/+0.29 °C. From these simulation results it can be veriﬁed that the temperature range of the sensor can
be programmed well.
The power consumption of the proposed circuit in 25 °C is 22.3 µW. This value is sum of all circuits,
sensor core (1.72 µW), VIC (1.21 µW), 1/x circuit (0.331 µW), ITC (1.16 µW), and counter (17.8 µW). Lastly, a
comparison of main performance parameters of temperature sensor is summarized in Table 1.
4. CONCLUSION
In this paper, the integrated temperature sensor circuit is constructed using sensor core, voltage-to-current
converter (VIC), 1/x circuit, current-to-time converter (ITC) and counter. Sensor core is formed using CMOS circuit
operated in weak inversion region and it is insensitive to device parameter of fabrication process. The output of the
sensor is then digitized using proposed programmable temperature range digital interface.
The performance of the proposed circuit was evaluated using HSPICE with 1P, 5M, 3-wells, 0.18-m CMOS
process (BSIM3v3.2 LEVEL53). As a result, sensitivity of temperature sensor core is 0.783 mV/°C, with 0.89 %
nonlinearity in -40 °C to 160 °C. This temperature sensor core has been fabricated using 0.6 µm CMOS process. As
a result of 10 different chips measurement is the average sensitivity of fabricated chip is 0.8343 mV/°C in 10 °C to
60 °C, with 2.70% nonlinearity.
Temperature range of the sensor is then programmed to be 0 °C to 100 °C using pulse width of Vtgr and

IJECE ISSN: 2088-8708 953
clock frequency of counter (CP). As the results of simulation, resolution of the sensor that its temperature range has
been programmed is 0.392 °C with -0.98/+0.29 °C inaccuracy and total power consumption is 22.3 µW in 25 °C.
The future work of this research is designing mask layout of the proposed digital interface, fabrication of
whole circuit in one prototype chip and evaluation of the characteristic.
ACKNOWLEDGEMENT
This work is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collab-
oration with Synopsys, Inc. and Cadence Design Systems, Inc.
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