ect292 nanoelectronics

Module1
Musaliar College of Engineering and Technology, Pathanamthitta
Department of Electronics and Communication Engineering
ECT 292 Nanoelectronics
APJ Abdul Kalam Technological University

Mesoscopic physics
• We are used to dividing nature into a macroscopic and a
microscopic world.
• The macroscopic world contains the things we can see with our
eyes.
• The microscopic world contains the building blocks of matter, the
atoms and molecules. We know they are there, but we can't see
them directly.
• The mesoscopic world is in between the microscopic and the
macroscopic world. The boundaries are not sharp, but can be
roughly indicated.
• Mesoscopic and macroscopic objects have in common that they
both contain a large number of atoms.

Mesoscopic physics(cts.)
• A first difference is that the macroscopic object can be well described by the
average properties of the material from which it is made.
• The mesoscopic object, in contrast, is so small that fluctuations around the
average become important.
• A second difference is that the macroscopic object obeys (to a good
approximation) the laws of classical mechanics, whereas the mesoscopic
object is so small that these laws no longer hold.
• Mesoscopic and microscopic systems both belong to the wonderful world of
quantum mechanics.
• Mesoscopic physics addresses fundamental physical problems which occur
when a macroscopic object is miniaturized.
• There is no rigid definition for mesoscopic physics but the systems studied
are normally in the range of 100 nm (the size of a typical virus) to 1000 nm
(the size of a typical bacterium):

Protons, Neutrons, and Electrons
• Atoms are made of extremely tiny particles called protons, neutrons, and
electrons.
• Protons and neutrons are in the center of the atom, making up the
nucleus.
• Electrons surround the nucleus.
• Protons have a positive charge.
• Electrons have a negative charge.
• The charge on the proton and electron are exactly the same size but
opposite.
• Neutrons have no charge.
• Since opposite charges attract, protons and electrons attract each other.

proton vs photon
• Proton is a positively charged particle having a finite non zero mass,
which forms the positive part of the atom.
• Photon is assumed to be a mass less particle through which energy
transfers when light propagates. Photons are discrete packets
having finite energy.

Quantum mechanics
• Quantum mechanics is the branch of physics relating to the very
small.
• At the scale of atoms and electrons, many of the equations of
classical mechanics, which describe how things move at everyday
sizes and speeds, cannot be useful.
• In classical mechanics, objects exist in a specific place at a specific
time.
• However, in quantum mechanics, objects instead exist in a base of
probability; they have a certain chance of being at point A, another
chance of being at point B and so on.

History of quantum mechanics
• Isaac Newton thought that light was made of very small things that
we would now call particles .
• Christiaan Huygens thought that light was made of waves.
• Scientists thought that a thing cannot be a particle and a wave at the
same time.
• Scientists did experiments to find out whether light was made of
particles or waves.
• They found out that both ideas were right —light was somehow both
waves and particles.
• Everything behaves both like a wave and like a particle. However,
this effect is much smaller in large objects

• In 1924, de Broglie used the equations of Einstein's theory of special
relativity to show that particles can exhibit wave-like characteristics,
and that waves can exhibit particle-like characteristics.
• Then in 1925, two scientists, working independently and using
separate lines of mathematical thinking, applied de Broglie's
reasoning to explain how electrons moved in atoms.
• In Germany, physicist Werner Heisenberg accomplished this by
developing "matrix mechanics." Austrian physicist Erwin
Schrödinger developed a similar theory called "wave mechanics.“
• Schrödinger showed in 1926 that these two approaches were
equivalent
• The Heisenberg-Schrödinger model of the atom, in which each
electron acts as a wave (sometimes referred to as a "cloud")
around the nucleus of an atom replaced the Rutherford-Bohr model.

Heisenberg uncertainty principle
• Werner Heisenberg described the Uncertainty principle, which says that the more we
know about where a particle is, the less we can know about how fast it is going and
in which direction.
• In other words, the more we know about the speed and direction of something
small, the less we can know about its position.
• we can never know both the location and the momentum of a particle.
• The idea shows that because these pieces are so small, whatever device you use to
measure the particles will affect them.
• If you use light to examine a piece of light, won't you knock it around? Well now you
just lost the idea of position.
• What if you freeze it in place? That's all very well, but now you don't know where it
was going, or how much momentum it had.
• When you increase the precision of one measurement, the other measurement will
suffer.
• You can not observe something naturally without affecting it in some way.

Waves and photons
• Photons are much smaller than atoms and protons and electrons.
• The more photons a lamp shoots off, the brighter the light.
• Light is a form of energy that behaves like the waves in water or
radio waves.
• Each photon carries a certain amount, or 'quantum', of energy
depending on its wavelength.
• Wavelengths are not always so small. Radio waves have longer
wavelengths.
• Each photon has a certain amount of energy related to its
wavelength. The shorter the wavelength of a photon, the greater its
energy.
• Wavelength and frequency are inversely proportional.

• Quantum mechanics started when it was discovered that a certain
frequency means a certain amount of energy.
• Energy is proportional to frequency (E ∝ f).
• The higher the frequency, the more energy a photon has, and the
more damage it can do.
• Max Planck discovered the relationship between frequency and
energy.
• Nobody before had ever guessedthat frequency would be directly
proportional to energy.
• the formula that Planck worked out is E=h*f.
• his h is a number called Planck's constant

TRENDS IN NANOELECTRONICS AND
OPTOELECTRONICS
Size
• The evolution of microelectronic devices is
influenced by factors such as growing demands in
memory capacity of integrated circuits, high
transmission data speed, optical communications
etc.
• This requires electronic devices with faster speed
operation and smaller size.
• Now the transistors are fabricating around 10 nm
technology

Figure shows the reduction of feature size of MOS transistors

• It seems reasonable that the rate of scaling down
predicted by Moore’s law will have to slow down.
• It is expected that the limits of further miniaturization,
from an industrial and economic point of view, will be
reached in about one decade.
• Reason- Technological limits
The amount of heat generated cannot be eliminated
because of thermal conductivity limits of the materials
and the increasing number of layers.
The other factor is related to the “parameter spread” in
fabrication. As the size of the region to be doped is
decreased to about 0.1μm3, the number of doping atoms
becomes so low that the parameter spread cannot be
controlled appropriately.

• Reason- Physical limits
– The energy necessary to write a bit should be several times
kT
– Relativistic limit: Signals cannot propagate faster than the
speed of light.
– Uncertainty principle: Accordingto the Heisenberg’s
uncertainty principle, the energy and time needed to write
or read a bit should be related by E· t ≥h. Tobe safe, we
ask the product E · t to be 100h.
Since for future circuits E could be as low as 10−19J,we
can appreciate that we can approach thequantum limit as
the frequency increases.

Deposition Methods
• The evolution towards nanoelectronics has been possible because of
advances in the deposition of very thin films to form heterostructures.
• Standard evaporation and sputtering techniques did not produce
heterostructures of enough quality.
• Molecular beam epitaxy (MBE) and metal organic chemical vapour
deposition (MOCVD) methods are commonly using for nanolayer
deposition.
• In MBE, a film of the desired material is epitaxially grown over a substrate
under ultrahigh vacuum conditions.
• Source material is heated to produce an evaporated beam of particles.
These particles travel through a very high vacuum (practically free space) to
the substrate, where they condense.
• This technique allows a layer-by-layer growth of films.
• Although the deposited films are of very high quality, the technique is
somewhat slow and expensive.

• MOCVD is the preferred industrial technique to produce
semiconductor heterostructures.
• It is a chemical vapour deposition method used to produce thin
films.
• In contrast to molecular-beam epitaxy (MBE), the growth of crystals
is by chemical reaction and not physical deposition.
• This takes place not in vacuum, but at moderate pressures .
• For example, GaAs can be grown over a substrate at about 500◦C
by the reaction of arsine (AsH3) gas and trimethyl gallium (CH3)3Ga
at sub-atmospheric pressures.
• This technique allows for simultaneous deposition on several wafers
and is used for the commercial production of semiconductor lasers.

New technologies
• superconductivity electronics, spintronics, Molecular
electronics , bioelectronics and optoelectronics are
emerging as future scopes.
• Superconducting electronics, which consists of two
superconducting layers separated by a very thin oxide
insulating film[Josephson junction] that can be tunnelled
by superconducting pairs of electrons.
• The advantages of superconducting electronics are
based on the fact that Josephson junctions can operate
at high switching speeds (switching times between 1 and
10 ps) and the amount of dissipated power is very low.
• Another technology, spintronics, which exploits the spin
orientation of electrons

• Molecular electronics is based on the different states or
configurations that molecules can take, like “trans” or
“cis”, as well as parallel or antiparallel alignment of the
spin of unpaired electrons.
• The change between states must be fast, consume
little energy and should be addressed by some
external signal.
• If this technology is able to be put to work, we will have
the ultimate step in miniaturization, since molecules
are much smaller than present feature sizes in
integrated circuits.

• Biology-inspired electronics, also called bioelectronics is
an another emerging area in nanoelectronics.
• It imitates the capabilities of biological neurons in parallel
processing as well as their 3D architectures and the
topology of the interconnects.
• a neuron is very large for nanotechnology standards.

• Opto-elctronics devices have a great upsurge since the
development of optical fibre communications.
• At present a tendency to replace, whenever possible,
electronic devices by photonic ones.
• Now, laser diodes are manufactured in chips constituting
the so-called optoelectronic integrated circuits (OEIC).

characteristic lengths in mesoscopic
systems
• Mesoscopic physics deals with structures which have a size
between the macroscopic world and the microscopic or
atomic one.
• Above structures are also called mesoscopic systems, or
nanostructures in a more colloquial way since their size
usually ranges from a few nanometres to about 100 nm.
• The electrons in such mesoscopic systems show their
wavelike properties and therefore their behavior is dependent
on the geometry of the samples.
• In this case, the states of the electrons are wavelike and
somewhat similar to electromagnetic radiation in waveguides.

• For the description of the behavior of electrons in solids it is very
convenient to define a series of characteristic lengths.
• If the dimensions of the solid in which the electron is embedded is
of the order of, or smaller than these characteristic lengths, the
material might show new properties, which in general are more
interesting than the corresponding ones in macroscopic materials.
• In fact, the physics needed to explain these new properties is based
on quantum mechanics.
• To exhibit quantum mechanical effects, semiconductor
nanostructures should construct with one or two of their dimensions
of the order of, or smaller than characteristics length.
• In general, a mesoscopic system approaches its macroscopic limit if
its size is several times its characteristic length.
• Some of the most commonly used characteristics lengths in
mesoscopic systems is given.

de Broglie wavelength
• It is well known from quantum mechanics that for an
electron of momentum p, there corresponds a wave of
wavelength given by the de Broglie wavelength:
• m*is the electron effective mass, instead of the mass
mo of the electron in vaccum.
• Smaller the value of m∗,the easier will be to observe
the quantum effects in nanostructures of a given size.

Mean free path
• As the electron moves inside a solid, it is usually
scattered by interactions with crystal imperfections like
impurities, defects etc.
• These scattering events or “collisions” are inelastic, i.e.
the values of energy and momentum of the system after
the interaction, differ from the corresponding ones before
they interact.
• The distance covered by the electron between two
inelastic collisions is usually called the mean free path le
of the electron in the solid.
• If v is the speed of the electron, then

Diffusion length
• In a mesoscopic system of typical size L, the electrons can
move either in the ballistic regime or in the diffusive regime.
• If the previously defined mean free path le is much larger than
L, the particle moves throughout the structure without
scattering; this is the so-called ballistic transport regime
• On the other hand, if le<< L, transport can be explained as
a diffusion process.
• In this case, the system is characterized by a diffusion
coefficient D.
• In terms of D, the diffusion length Le is defined by

Screening Length
• In extrinsic semiconductors, the dopants or impurities are
usually ionized and constitute a main factor contributing to
scattering.
• The effect of the impurity over the distance is partially
reduced.
• It is found that the variation of the potential is modulated by
the term exp(−r/λs) where λs is called the screening length
and is given by
• where e is the electronic charge, the dielectric constant of the
semiconductor, and n the mean background carrier
concentration.
• In a typical semiconductor, λs is in the range 10–100 nm, and is
an indication of the attenuation of charge disturbances in a
semiconductor

Localization Length
• The localization length can be understood in terms of
transport in disordered materials
• In order to describe the hopping transport and other
mesoscopic properties of the electron inside the material, it is
assumed that the electron wave function is described by
• where λloc is known as the localization length

QUANTUM MECHANICAL COHERENCE
• In a mesoscopic structure, the behaviour of the electron should be
described quantum mechanically using Schrödinger equation.
• If the electron interacts inelastically with a defect, or any impurity, the
electrons change their energy and momentum, as well as the phase of their
wave function.
• The phase coherence length Lφ is defined as the distance travelled by the
electron without the carrier wave changing its phase
• In quantom physics, Lφ should be a length similar to the inelastic
scattering mean free path le.
• electrons can show interference effects over distances smaller than Lφ. If
electrons with phase φ1 interfere with electrons of phase φ2, we know from
the wave theory that the amplitudes can add up to each other, or they can be
subtracted depending on the phase difference.

Low dimensional structures
• When one or more of the dimensions of a solid are reduced sufficiently, its
physicochemical characteristics notably depart from those of the bulk solid.
• When the dimensions of the solid get reduced to a size comparable with, or
smaller than λ, then the particles behave wave-like and quantum mechanics
should be used.
• With reduction in size, novel electrical, mechanical, chemical, magnetic, and
optical properties can be introduced. The resulting structure is then called a
low-dimensional structure.
• When one of the three spatial dimensions of a solid, usually a
semiconductor material, is of a size comparable to λB, we say that we are
dealing with a material or a structure of low dimensionality.
• The low dimensional materials exhibit new physicochemical properties not
shown by the corresponding large-scale structures of the same composition.
• Suitable control of the properties and responses of nanostructures can lead
to new devices and technologies.

• Low-dimensional structures are usually
classified according to the number of reduced
dimensions they have.
• Based on reduced dimension, the low
dimensional materials are in generally classified
as 2D, 1D and 0D.

• The quantum confinement effect is observed
when the size of the particle is too small to be
comparable to the wavelength of the electron.

Quantum confinement
• Quantum confinement leads to a collapse of
the continuous energy bands of a bulk
material into discrete, atomic like energy
levels.

• A quantum confined structure is one in which
the motion of the carriers (electron and hole) are
confined in one or more directions by potential
barriers.
• Based on the confinement direction, a quantum
confined structure will be classified into three
categories as quantum well, quantum wire and
quantum dots

• Let us suppose that we have an electron
confined within a box of dimensions Lx , Ly &
Lz. If the characteristic length is λ, we can have
the following situations:

λ << Lx, Ly, Lz
• In this case the electron behaves as in a regular 3D bulk
semiconductor.
λ > Lx and Lx<< Ly, Lz
• In this situation we have a 2D semiconductor perpendicular
to the x-axis. This mesoscopic system is also called a
quantum well.
λ > Lx, Ly and Lx, Ly << Lz
• corresponds to a 1D semiconductor or quantum wire
λ >>Lx, Ly, Lz
• In this case it is said that we have a 0D semiconductor or a
quantum dot

• As the size of a particle decrease till we a reach a nano
scale the decrease in confining dimension makes the
energy levels discrete and this increases or widens up
the band gap.
• This will ultimately increases the band gap energy.

• Once we find the wave function of a particle, we can calculate its
average position, energy, and momentum, within the limits of the
uncertainty principle.

DENSITY OF STATES AND DIMENSIONALITY
• Most physical properties significantly depend on the DOS
function ρ.
• It is the number of energy states existing in a region.
• The DOS function, at a given value E of energy, is
defined such that ρ(E)VE is equal to the number of
states (i.e. solutions of Schrödinger equation) in the
interval energy E around E.
• In quantom level, the DOS funtion become discontinues.
• Each of the above states is also called as Bloch state and
is designated by a quantum number k (Bloch state).

• let us remind that for bulk solids ρ(E) varies with
energy in the form √E
• Some important considerations can already be made:
the DOS function in 3D semiconductors is
proportional to √E, in 2D is constant, and in 1D varies
inversely proportional to √E.

• In more accurately the DOS can define as
below
• where nz refers to the quantization in the confined z-
axis and θ is the step function.
• Similarly nx and ny refers to the quantization in
the confined x and y axis

Basic properties of two dimensional
semiconductor nanostructures
• One of the most practical two-dimensional
semiconductor structures consists of a sandwich of
gallium arsenide (GaAs), with a thickness in the
nanometre range, surrounded on each side by a
semiconductor such as aluminium gallium arsenide
(AlxGa1−xAs) of higher bandgap.
• The bandgap of AlxGa1−xAs (x ∼ 0.3) is close to 2.0 eV
while that of GaAs is 1.4 eV.
• As a consequence, the potential energy profile has the
shape of a square well.

• Carrier motion for both electrons and holes is not
allowed in the direction perpendicular to the well, usually
taken as the z-direction because of the potential walls.
• However in the other two spatial directions (x, y), parallel
to the semiconductor interfaces, the motion is not
restricted.
• The behavior of electrons when their motion is restricted
along one direction in the wells of infinite height
corresponds to a well-known problem in quantum
mechanics, the so-called particle in a box of infinite
wells.

• Solving Schrondinger equations for the case of infinite potentials
barriers, the wave functions and energy levels of the bound
electrons are given by
• where m∗e is the effective mass of the electrons in the well
material for the motion along the z-direction and a is the width of
the well.
• From above expression, it is observed that, quantum size effects
will be more easily observable in quantum structures of very small
size a, and for materials for which the electron effective mass is as
small as possible.
• GaAs nanostructures are very convenient since m∗e ∼0.067m0,
where m0 is the free electron mass.

• It is interesting to observe that the lowest energy of electrons, E1, is
different from zero, in contrast with classical mechanics.

• Motion of electrons in the quantum well is
confined only in one direction, z, but in the (x, y) planes
the electrons behave as in a three- dimensional solid.
• Therefore the electron wave function is separable as the
product of ψx , ψy , andψz.
• ψ= ψxψyψz

• In our simple model, ψx and ψy satisfy the Schrödinger
equation for a free electron, while ψz is given by the
Schrödinger equation with a square well potential V(z) and
therefore can be expressed as in our previous equation.
• The expression for the total energy of electrons in the
potential can be written as
• Where kx , ky represents the quasi-continuous values as in
the case of a free electron in the bulk.
• En corresponding to the discrete values of energy in the z-
direction.

• The densities of states in energy is given by’
• DOS function, for the two-dimensional case,
exhibits a staircase-shaped energy dependence
in which all the steps are of the same height, but
located at energies En given by previous Eq.

SQUARE QUANTUM WELL OF FINITE
DEPTH
• If we call V0 in Figure as the height of the finite square well, it is
evident that for states with energy E<V0 we have bound states, i.e.
the electrons are trapped inside the well of width a.
• For E>V0, we have continuous propagation states, in which the
electrons are free to move from z = −∞ to z = +∞.
• The wave functions inside the well should have the same shape as
in the case of the infinite well.
• Solutions outside the well, which are obtained from the Schrödinger
equation with a potential energy equal to V0, are exponential decay
functions

Parabolic Quantom Wells
• Parabolic quantum well profiles can be produced by the
MBE growth technique.
• Alternate layers of GaAs and AlxGa1−xAs of varying
thickness are deposited.
• Increasing the thickness of the AlGaAs layer quadratically
with distance, while the thickness corresponding to the
GaAs layer is proportionally reduced.
• potential energy of the system is given as
• Wave functions are mostly symmetrical

Triangular wells
• The potential profile across quantum heterojunctions ,
such as the well-known modulation doped AlGaAs–
GaAs heterojunction, is almost triangular in shape for
electrons within GaAs.
• For simplicity, it is assumed that the left barrier is infinite
in energy and it increases linearly for z > 0:
• where e is a constant equal to the electron charge and F
is a uniform electric field.

• Electron energies and states are found by solving the
Schrödinger equation.
• in contrast to the square well where the levels become
further apart as n increases.
• As n increases, the wave functions add one more
halfcycle.
• The wave functions are neither symmetric or
antisymmetric due to the asymmetry of the potential
well.

QUANTUM WIRES
• Electrons should be confined in two directions,
(x, y), and can freely propagate along the z-
direction
• Total energy of the electrons in the quantum wire
should be of the form:
• where the last term represents the kinetic
energy of the electron propagating along the z-
direction.

Density of states for the one-dimensional
material may defined as,
which diverges for E = 0
• The expression of the total DOS per unit
length for a quantum wire can be expressed as

QUANTUM DOTS
• Quantum dots are often nanocrystals with all three
spatial dimensions in the nanometre range.
• Although the word “dot” implies an infinitely small size,
in practice dots might have a large number of atoms:
104–106.
• Quantum dots are often referred to as artificial atoms
because the spectrum of the energy levels resembles
that of an atom.
• Even the introduction or removal of one single electron in
quantum dots, in contrast to the case of 2D or 1D
systems, produces dominant changes in the electrical
characteristics.

• The electron wave function and the energy levels
are given by
• In contrast to the 2D and 1D cases, now the
energy is completely quantized
• There is no free electron propagation.
• Since in the case of quantum dots the electrons
are totally confined, the energy spectrum is totally
discrete and the DOS function is formed by a set
of peaks in theory with no width and with infinite
height.

ect292 nanoelectronics

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