This document provides an overview of semiconductor PN junction theory. It begins with atomic theory, discussing the structure of atoms and energy bands in conductors, insulators, and semiconductors. Intrinsic and extrinsic semiconductors are introduced, where doping introduces impurities to alter conductivity. A PN junction is formed at the interface between a p-type and n-type semiconductor. During diffusion, majority carriers cross the junction, recombining and leaving a depletion region. A voltage can forward or reverse bias the junction, changing the depletion width and current flow characteristics.