Fundamentals of RF Systems
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This document provides an overview of fundamentals of RF systems. It discusses topics such as microwave transmission, modulation, antennas, transmission lines, amplifiers, and filters. Key concepts covered include up-conversion and down-conversion in transmitters and receivers, characteristics of common transmission line types like coaxial cables and microstrip lines, impedance matching in amplifiers, and specifications of components like low noise amplifiers and filters. The document serves as an introduction to basic RF engineering principles.
![Fundamentals of RF SystemsFundamentals of RF Systems
전자파연구실전자파연구실9
Fundamentals
Antenna gain: anisotropic radiation (G > 1)
isotropic radiation (G = 1)
Directivity and efficiency:
Angular beamwidth: 3dB
Radiation pattern [dBi]: dB isotropic
2. Antennas
DG η=](https://image.slidesharecdn.com/fundamentalsofrfsystems-130903001446-phpapp01/85/Fundamentals-of-RF-Systems-9-320.jpg)
![Fundamentals of RF SystemsFundamentals of RF Systems
전자파연구실전자파연구실30
Selection of active device
4. Amplifier
pHEMT amplifier with package
Gain [dB]
Bandwidth [Hz]
Stability: oscillation
Noise figure [dB]: LNA
P1dB [dBm]: PA
Characteristics of
active device: bias
Bare chip](https://image.slidesharecdn.com/fundamentalsofrfsystems-130903001446-phpapp01/85/Fundamentals-of-RF-Systems-30-320.jpg)
![Fundamentals of RF SystemsFundamentals of RF Systems
전자파연구실전자파연구실43
Power divider
Division of power: scattering matrix
Lossless system
-
- Scattering matrix: unitary matrix
3-port networks 5-port networks
−−−
−−
−
=
ββαα
βαβα
αα
222
22
2
lossy
11
1
10
S
[ ] [ ] [ ] [ ]** −−++
= VVVV
TT
5. Filter](https://image.slidesharecdn.com/fundamentalsofrfsystems-130903001446-phpapp01/85/Fundamentals-of-RF-Systems-43-320.jpg)
Fundamentals of RF Systems
- 2. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실2 1. Microwave systems Transmission Information - Channel bandwidth - Base band - Inefficient wave radiation Modulation – center frequency Time domain Frequency domain 출처 : RFDH.com
- 3. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실3 Why’s modulation need? Transmission efficiency - Multiplexing - Antenna length: wavelength - Wave radiation: comparison with DC Battery: DC Antenna: AC 1. Microwave systems
- 4. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실4 Microwave transmitter (Tx) Up-conversion: frequency ( ))cos()cos( 2 1 )cos()cos( yxyxyx −++= BBf BBLO ff ± BBLO ff ± 1. Microwave systems 출처 : RFDH.com
- 5. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실5 Microwave receiver (Rx) Down-conversion: frequency ( ))cos()cos( 2 1 )cos()cos( yxyxyx −++= BBfBBIF ff ±BBLO ff ± IFLO fff −= IFff = 1. Microwave systems 출처 : RFDH.com
- 6. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실6 Microwave transceiver Duplexer: bandpass filter or switch - Loss, tx suppression, channel selection IF: superheterodyne No IF: direct conversion 1. Microwave systems 출처 : RFDH.com
- 7. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실7 FDMA (FDM Access) 1. Microwave systems Resource: frequency Guard band Simple transceiver Interference
- 8. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실8 DS(Direct Sequence)-CDMA 1. Microwave systems QPSK: Quadrature Phase Shift Keying
- 9. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실9 Fundamentals Antenna gain: anisotropic radiation (G > 1) isotropic radiation (G = 1) Directivity and efficiency: Angular beamwidth: 3dB Radiation pattern [dBi]: dB isotropic 2. Antennas DG η=
- 10. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실10 2. Antennas Dipole antenna Simple but long structure Low efficiency Microstrip type
- 11. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실11 Handy phone antenna Helical antenna 2. Antennas Complicated structure Medium efficiency
- 12. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실12 Antenna simulation Ansoft: Ensemble CST: MWS Ansoft: HFSS 2. Antennas
- 13. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실13 Wave propagation }Re{ }Re{ )cos(),( )( tjzjj o ztj o o eeeV eV ztVtzV ωβφ φβω φβω − +− = = +−= 3. Tx line theory
- 14. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실14 Distributed element Lumped element: R, L, C Distributed element: tx line 3. Tx line theory
- 15. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실15 Wave solution Traveling wave solution - Voltage: - Current: zz s eVeVzV γγ −−+ += 00)( zz s eIeIzI γγ −−+ −= 00)( )())(( )( 2 2 zVCjGLjR dz zVd s s ωω ++= ))(( CjGLjRj ωωβαγ ++=+= 3. Tx line theory
- 16. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실16 Characteristic impedance Important parameter in tx line: - - CjG LjR Z ω ω + + =0 − − + + == 0 0 0 0 0 I V I V Z 3. Tx line theory 0Z
- 17. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실17 Reflection coefficient 0 0 0 11 || ZZ ZZ V V e L Loj + − ==Γ=Γ + − φ Voltage wave continuity conditions Current wave continuity conditions 3. Tx line theory
- 18. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실18 Wave power ( ) ( )2 0 2 0* 1 2 Re 2 1 Γ−== + Z V VIP 3. Tx line theory
- 19. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실19 SWR (Standing Wave Ratio) SWR: field theory VSWR (Voltage SWR): tx line theory ||1 ||1 min max Γ− Γ+ = = V V s Experiment 3. Tx line theory
- 20. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실20 Smith chart Graphical method Essential diagram for microwave engineering P. Smith in 1939 3. Tx line theory
- 21. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실21 Induction of Smith chart S-parameter: reflection coefficient |S11| = 0: all transmission |S11| = 1: all reflection 3. Tx line theory
- 22. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실22 VNA (Vector Network Analyzer) Measurement equipment Reflection coefficients with frequency sweep 3. Tx line theory
- 23. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실23 Scattering matrix: Two-port network Matrix definition: matched load gain: isolation: reflection:,where 21 12 2211 2 1 2221 1211 2 1 S S SS V V SS SS V V = + + − − 3. Tx line theory
- 24. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실24 Antenna impedance Antenna impedance (not infinity) matching No reflection, power efficiency Handy phone antenna 3. Tx line theory
- 25. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실25 Coaxial line 3. Tx line theory Wide bandwidth (TEM) Characteristic impedance: 50 Ohms Shielding Conductor and dielectric loss Measurement RG (Radio Government) series Coaxial line
- 26. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실26 Connector BNC (Bayonet Neill Concelman) connector SMA (SubMiniature type A) connector Type N connector Type K connector APC (Amphenol Precision Connector) 3. Tx line theory
- 27. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실27 Microstrip line 3. Tx line theory Quasi-TEM line Easy fabrication: etching Substrate Characteristic impedance
- 28. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실28 Substrate Relative permittivity Thickness of a substrate: mil (inch/1000) Thickness of a metal: oz (almost 1.4 mils) Loss: loss tangent Temperature 3. Tx line theory Power amplifier module
- 29. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실29 Etching: PCB (Printed Circuit Board) FR4, RT/duroid 5880 (6010 …) Film Photoresist (PR) Toluene Ultraviolet Iron chloride 3. Tx line theory
- 30. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실30 Selection of active device 4. Amplifier pHEMT amplifier with package Gain [dB] Bandwidth [Hz] Stability: oscillation Noise figure [dB]: LNA P1dB [dBm]: PA Characteristics of active device: bias Bare chip
- 31. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실31 Wire bonding for bare chip Wire bonding vs. soldering 4. Amplifier
- 32. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실32 Bias design Assignment of AC and DC path 4. Amplifier
- 33. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실33 S2P file: S-parameter information Input impedance: S11 Output impedance: S22 Gain: S21 Isolation: S12 4. Amplifier
- 34. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실34 Impedance matching Lumped elements (L or C) Stub matching Conjugate matching: maximum power transfer Noise matching: low noise ( )* LL ZZ → 4. Amplifier
- 35. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실35 Block diagram of cellular phone LNA (Low Noise Amplifier), PA (Power Amplifier), Mixer, VCO, switch Filter, duplexer 4. Amplifier
- 36. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실36 Digital RF system Transmitter and receiver 4. Amplifier
- 37. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실37 LNA (Low Noise Amplifier) Noise figure: 2 dB Amplifier gain: 15 dB Return loss: 15 dB Reverse isolation: 20 dB Impedance matching: power and noise 4. Amplifier
- 38. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실38 SNR: signal to noise ratio Noiseless system: NF = 1 Noisy system: NF > 1 Ground Noise figure (NF) 4. Amplifier in out out in out in N N S S SNR SNR NF ==
- 39. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실39 Simulation of LNA Port OUT Num=2 Port IN Num=1 C C2 C=1.0pF C C1 C=1.0pF L L3 R= L=1.0nH L L2 R= L=1.0nH TSMC_CM025RF_PMOS_RF PMOS_RF1 finger=16 width=10um length=0.24um Type=2.5Vtwin-well TSMC_CM025RF_NMOS NMOS2 Width=0.30um Length=0.24um Type=2.5V_nom L L1 R= L=1.0nH R R3 R=50Ohm R R2 R=50OhmTSMC_CM025RF_NMOS NMOS1 Width=0.30um Length=0.24um Type=2.5V_nom R R1 R=50Ohm HP ADS (Advanced Design System) AC and DC path 4. Amplifier
- 40. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실40 HPA (High Power Amplifier) Output power (P1dB), power gain Linearity (OIP3) Efficiency (PAE) Temperature Power amplifier scheme 4. Amplifier
- 41. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실41 Characteristics 5. Filter 2 port network: S parameters Pass band and stop band Return loss and insertion loss Ripple and selectivity (skirt) Pole and zero Group delay
- 42. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실42 Classification LPF (Low Pass Filter) HPF (High Pass Filter) BPF (Band Pass Filter) BSF (Band Stop Filter): notch filter Duplexer: 2 BPF Diplexer: LPF and HPF 5. Filter
- 43. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실43 Power divider Division of power: scattering matrix Lossless system - - Scattering matrix: unitary matrix 3-port networks 5-port networks −−− −− − = ββαα βαβα αα 222 22 2 lossy 11 1 10 S [ ] [ ] [ ] [ ]** −−++ = VVVV TT 5. Filter
- 44. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실44 T-junction power divider Simple 3-port network Waveguide or microstrip line Lossless or all-port matched network portat 021in YYYjBY ++= 5. Filter 출처 : RFDH.com
- 45. Fundamentals of RF SystemsFundamentals of RF Systems 전자파연구실전자파연구실45 Frequency conversion Mixer VCO: Voltage Controlled Oscillator PLL: Phase Locked Loop TCXO: Temperature Compensated Crystal Oscillator 6. IF conversion 출처 : RFDH.com