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What is a Semiconductor?
Microprocessors
LED
Transistors
Capacitors
Introduction to Semiconductors-edited.ppt
Range of
Conduciveness
The semiconductors fall somewhere midway
between conductors and insulators.
Range of
Conduciveness
Semiconductors have special electronic properties
which allow them to be insulating or conducting
depending on their composition.
1824
John Jacob Berzelis
First to isolate and identify silicon.
Remains little more than a scientific curiosity until
the 1900s.
1833
Resistance
(Ohms)
Temperature (ºC)
Michael Faraday
Discovers that electrical resistively decreases as
temperature increases in silver sulfide.
This is the first investigation of a semiconductor.
Lab: Metals vs. Semiconductors
Lab: Metals vs. Semiconductors
Temperature Copper Germanium
0ºC 31Ω 5.2Ω
25ºC 33Ω 4.2Ω
50ºC 37Ω 1.2Ω
75ºC 41Ω 0.63Ω
100ºC 44Ω .029Ω
Data Chart
1873
William Smith
Discovers the photoconductivity of selenium and
invents a selenium photometer.
Introduction to Semiconductors-edited.ppt
1874
Ferdinand Braun
The first semiconductor device was born.
Radio receivers required a device called a rectifier to
detect signals.
He used the rectifying properties of the galena
crystal, a semiconductor material composed of lead
sulfide, to create the cat's whisker diode for this
purpose.
1927
Sommerfeld Bloch
Applied quantum mechanics to solids, helping
explain the conduction of electricity in
semiconductors.
Scientific Principle of
Conduction
Valence Band
Most electrons remain bound to the atoms in this
band.
The highest occupied energy band is called the
valence band.
Conduction Band
The conduction band is the band of orbitals that are
high in energy and are generally empty.
It is the band that accepts the electrons from the
valence band.
Energy Gap
The “leap” required for electrons from the Valence
Band to enter the Conduction Band.
Valence Band
Conduction Band
Band Gap
Conductors
In a conductor, electrons can move freely among
these orbitals within an energy band as long as the
orbitals are not completely occupied.
Conductors
In conductors, the valence band is empty.
Introduction to Semiconductors-edited.ppt
Conductors
Also in conductors, the energy gap is nonexistent or
relatively small.
Insulators
In insulators, the valence band is full.
Introduction to Semiconductors-edited.ppt
Insulators
Also in insulators, the energy gap is relatively large.
Semiconductors
In semiconductors, the valence band is full but the
energy gap is intermediate.
Semiconductor materials such as Ge and Si that show a reduction in
resistance with increase in temperature are said to have a negative
temperature coefficient.
Introduction to Semiconductors-edited.ppt
Semiconductors
Only a small leap is required for an electron to enter
the Conduction Band.
Band Diagrams
Band Diagrams
1 eV = 1.6 x10-19
J
Silicon
Silicon is a very common element, the main element
in sand & quartz.
Silicon’s Arrangement
Intrinsic Silicon
A silicon crystal is different from an insulator.
Intrinsic Silicon
At any temperature above absolute zero
temperature, there is a finite probability that an
electron in the lattice will be knocked loose from its
position.
Intrinsic Silicon
The electron in the lattice knocked loose from its
position leaves behind an electron deficiency called
a "hole".
Current Flow
If a voltage is applied, then both the electron and the
hole can contribute to a small current flow.
Impurity
A semiconductor material that has been subjected to the doping
process is
called an extrinsic material.
Doping
Doping (adding an impurity) can produce 2 types of
semi-conductors depending upon the element
added.
P-Type Doping
In P-type doping, boron or gallium is the dopant.
The diffused impurities with three valence electrons are called
acceptor atoms.
Introduction to Semiconductors-edited.ppt
P-Type Doping
Boron, gallium and indium each have only three
outer electrons.
When mixed into the silicon lattice, they form
"holes" in the lattice where a silicon electron has
nothing to bond to.
P-Type Doping
The absence of an electron creates the effect of a
positive charge, hence the name P-type.
Holes can conduct current. A hole happily accepts
an electron from a neighbor, moving the hole over a
space. P-type silicon is a good conductor.
N-Type
In N-type doping, phosphorus or arsenic is added to
the silicon in small quantities.
The n-type is created by introducing those impurity
elements that have five valence electrons
(pentavalent), such as antimony, arsenic, and
phosphorus.
Introduction to Semiconductors-edited.ppt
N-Type
Phosphorus and arsenic each have five outer
electrons, so they're out of place when they get into
the silicon lattice.
The fifth electron has nothing to bond to, so it's free
to move around.
N-Type
It takes only a very small quantity of the impurity to
create enough free electrons to allow an electric
current to flow through the silicon. N-type silicon is
a good conductor.
Electrons have a negative charge, hence the name
N-type.
Diffused impurities with five valence electrons are called
donor atoms.
Introduction to Semiconductors-edited.ppt
P-N Junction
We create a p-n junction by joining together two
pieces of semiconductor, one doped n-type, the
other p-type.
P-N Junction
In the n-type region there are extra electrons and in
the p-type region, there are holes from the acceptor
impurities .
P-N Junction
In the p-type region there are holes from the
acceptor impurities and in the n-type region there
are extra electrons.
P-N Junction
When a p-n junction is formed, some of the
electrons from the n-region which have reached the
conduction band are free to diffuse across the
junction and combine with holes.
P-N Junction
Filling a hole makes a negative ion and leaves
behind a positive ion on the n-side.
A space charge builds up, creating a depletion
region.
P-N Junction
This causes a depletion zone to form around the
junction (the join) between the two materials.
This zone controls the behavior of the diode.
Forward Biasing
Forward biasing the p-n junction drives holes to the
junction from the p-type material and electrons to
the junction from the n-type material.
Forward Biasing
At the junction the electrons and holes combine so
that a continuous current can be maintained.
Diode
A diode is the simplest possible semiconductor
device.
One Way Electric “Turnstile”
A diode allows current to flow in one direction but
not the other.
Jumping
If you apply enough reverse voltage, the junction
breaks down and lets current through.
Reverse Biasing
The application of a reverse voltage to the p-n
junction will cause a transient current to flow as
both electrons and holes are pulled away from the
junction.
Reverse Biasing
When the potential formed by the widened depletion
layer equals the applied voltage, the current will
cease except for the small thermal current.
This voltage is needed to start the hole-electron
combination process at the junction.
When forward-biased, there is a small amount of
voltage necessary to get the diode going. In silicon,
this voltage is about 0.7 volts.
There exists a potential difference across a
depletion layers is called barrier potential. It
depends on type of semiconductor material, amount
of doping and temperature.
Diode Characteristic
When reverse-biased, an ideal diode would block all
current. A real diode lets perhaps 10 microamps
through -- not a lot, but still not perfect.
Diode Characteristic
Usually, the breakdown voltage is a lot more voltage
than the circuit will ever see, so it is irrelevant.
Zener Diode
• Definition: Zener diode is specially designed for operation in the
breakdown region in reverse bias condition. It is also called breakdown
diode. In order to achieve sharp breakdown voltage, it is properly
doped. American Scientist C. Zener explained the phenomenon of the
breakdown.
Symbol of Zener Diode
Working Principle of Zener Diode
• A Zener diode is similar to conventional PN Junction diode except that it is
properly doped to achieve sharp breakdown voltage. There are two types of
mechanism by which breakdown can occur at reverse PN junction that
are avalanche and Zener breakdown.
Zener Breakdown
• Zener breakdown occurs due to high reverse Voltage. When the high reverse
voltage is applied the width of depletion layer increases. Due to this potential
barrier increases and a high electric field is generated at the junction. This high
electric field breaks the covalent bond and a large number of minority charge
carrier are generated.
• Thus, current increases suddenly due to the movement of minority charge
carriers and sometimes it leads to the breakdown of the junction. This is called
of Zener breakdown. This is observed in diodes having a reverse voltage
of less than 5 volts.
Avalanche Breakdown
•Avalanche Breakdown mechanism comes into picture when the reverse voltage
becomes extremely high. At such a high reverse voltage, the minority carriers get
extremely high kinetic energy. Due to which they easily detach electrons from the
covalent bond.
•Thus, these free electrons, in turn, collide with other atoms to liberate more
electrons. In this way, the current becomes very large that it leads to the
breakdown of the diode. Avalanche breakdown occurs when the reverse voltage
becomes higher than 5V.
A Zener diode can use any of these two breakdown mechanisms. Although there
are two types of breakdown mechanism, still only name Zener is preferred. Silicon
and Germanium both can be used for the construction of Zener diode, but Silicon
is often used because of it can operate at higher temperature, and current
capability of silicon is high.
Volt-Ampere Characteristics of Zener diode
• When the reverse voltage increases at a particular point, the junction
breakdowns due to large reverse current. The voltage at which current
starts increasing rapidly and the stage of breakdown is reached it is called
Zener Voltage. The current which increases rapidly is called Zener
Current.
• The diagram represents the Volt-Ampere Characteristics of Silicon and
Germanium diodes. It is operated in breakdown region, and the current is
limited by dynamic resistance called zener impedance. The magnitude of
zener voltage is dependent on the amount of doping.
Volt-Ampere Characteristics of Zener diode
• The forward Characteristics of Zener diode is similar to that of ordinary PN
Junction Diode. But the reverse characteristics are slightly different.
• During the operation in breakdown region, it does not burn out immediately.
As long as the current through the diode is limited by the external circuit
within permissible values, it does not burn out.
• A heavily doped diode will have very thin depletion layer. Thus, Zener
voltage will be very low. In this way, depletion layer and zener voltage can
be controlled with the help of doping concentration.
Applications of Zener Diode
1. Zener Diode as Voltage Regulator: Voltage regulator is a device which
maintains constant output voltage without bothering about variation in input
voltage and load current. Zener diode is used as the voltage regulator.
2. For Switching Operations: Zener diode is used as a switch. It is because of
its ability to produce change from low current to high current. Thus, it is used as
a switch.
3. As Clipper: Zener diode is used in wave shaping circuit as a clipper. It is
used to clip input waveform in specific applications.
4. As a reference element: In various circuits reference elements are required
for comparing voltages to a reference value. Thus, in such circuits, Zener diode
is used as a reference element.
5. Meter protection: Zener diode is used in electronics circuit for the protection
of multimeter. In some cases, excess current flows through a circuit and
damage the multimeter. Thus, Zener diodes protect it from damage by
providing voltage regulation.
•Zener diode is significant to use in breakdown region. Due to its doping
characteristics, the zener diode is made to use at high breakdown voltage.
Applications of Zener Diode
PARAMETERS ZENER BREAKDOWN AVALANCHE BREAKDOWN
Basic Definition It occurs when the electric field
is created due to high reverese
voltage.
It occurs when high velocity
electrons collide with bounded
electrons. (due to kinetic
energy)
Reverse Voltage
Range
Less than 5 V More than 5 V
Doping density High Doping density Low doping density
Temperature
Coefficient
Exhibit Negative temperature
coefficient
Exhibit Positive temperature
coefficient
Nature of V-I
Characteristics
Very Sharp Not as sharp as Zener
Breakdown
Mechanism Due to collision between
electrons
Due to High electric field
Differences between Avalanche and Zener
Breakdown
Introduction to Semiconductors-edited.ppt
Differences between Normal and Zener Diode
PARAMETERS DIODE ZENER DIODE
Definition Diode is a semiconductor
device which conducts only
in forward biased.
Zener diode is semiconductor
device which can conduct in
forward as well as reversed
biased.
Operation in
Reverse Biased
It gets damaged in reverse
biased.
It can operate without getting
damaged.
Circuit Symbol
Doping Intensity In normal diodes doping
intensity is low.
In Zener diode doping intensity is
high to achieve sharp
breakdown.
Application Diode is used in rectifiers,
clippers, clampers etc.
Zener diode is mostly used in
voltage regulator.
1947
Working at Bell Telephone, they were trying to
understand the nature of the electrons at the
interface between a metal and a semiconductor
(germanium).
First Transistor
It consisted of a plastic triangle lightly suspended
above a germanium crystal which itself was sitting
on a metal plate attached to a voltage source.
A strip of gold was wrapped around the point of the
triangle with a tiny gap cut into the gold at the
precise point it came in contact with the germanium
crystal.
The germanium acted as a semiconductor so that a
small electric current entering on one side of the
gold strip came out the other side as a
proportionately amplified current.
Transistors didn't need time to "warm up" like the
heaters in vacuum tube circuits.
Transistor
A transistor is a semiconductor device commonly
used to amplify or switch electronic signals.
The transistor is a three terminal device and
consists of three distinct layers.
Two of them are doped to give one type of
semiconductor and the there is the opposite type,
i.e. two may be n-type and one p-type, or two may be
p-type and one may be n-type.
They are designated either P-N-P (PNP) types of N-P-
N (NPN).
When discussing NPN transistors the N-Type
semiconductor material on one side of the wafer is
designated an emitter and it is most often connected
to a negative electrical current.
The P-Type material in the middle is the base.
The N-Type material on the other side of the base is
called the collector.
Highly automated manufacturing processes,
resulting in low per-unit cost.
Transistor Advantages
Extremely long life.
Higher reliability and greater physical ruggedness.
Small size and minimal weight, allowing the
development of miniaturized electronic devices.
Lower possible operating voltages, making
transistors suitable for small, battery-powered
applications.
Rectifiers
The most popular application of the diode.
Most electronics need a direct current to function,
but the standard form of electricity that is
transmitted to homes is alternating current.
Rectifiers are needed to change the alternating
current
into direct current inside the electronics so that they
can function correctly.
Rectification
is the conversion of alternating current (AC) to direct
current (DC).
Rectifiers
This involves a device that only allows one-way flow
of electrons, which is exactly what a semiconductor
diode does.
Half-Wave Rectifiers
The simplest kind of rectifier circuit is the half-wave
rectifier.
It only allows one half of an AC waveform to pass
through to the load.
Half-wave rectification is a very simple way to
reduce power to a resistive load.
Some two-position lamp dimmer switches apply full
AC power to the lamp filament for “full” brightness
and then half-wave rectify it for a lesser light output.
Bridge Rectifiers
1959
The First I.C.
Jack Kilby at Texas Instruments and Robert Noyce
at Fairchild Camera, came up with a solution to the
problem of large numbers of components, and the
integrated circuit was developed.
Instead of making transistors one-by-one, several
transistors could be made at the same time, on the
same piece of semiconductor( a silicon wafer).
Not only transistors, but other electric components
such as resistors, capacitors and diodes could be
made by the same process with the same materials.
1970
8080
8–bit processor
4004
4–bit unit
First microprocessor invented at Intel.
First commercial MPU in 1975.
1981
The IBM PC model 5150 was announced at a press
conference in New York on August 12, 1981 and
became available for purchase in early Fall 1981.
The base model retailed for $2880!
This included 64 kilobytes of RAM and a single-
sided 160K 5.25" floppy drive.
The IBM PC was powered by a 4.77 MHz Intel 8088
processor.
Introduction to Semiconductors-edited.ppt
Trends in Semiconductors
Smaller Transistors Higher Switching Speeds Declining Costs
The semiconductor industry has been successful in
its consistent efforts to reduce feature size on a
chip.
55,000,000 transistors
105,900,000 transistors
Smaller features mean denser packing of
transistors, which leads to more powerful
computers, more memory, and hopefully lower
costs.
Introduction to Semiconductors-edited.ppt
Single Crystal Semiconductor
Introduction to Semiconductors-edited.ppt
Introduction to Semiconductors-edited.ppt
Light Emitting Diodes
Semiconductor Lasers
Cascade Lasers
Quantum Cascade Laser
Solar Panels
Introduction to Semiconductors-edited.ppt
Introduction to Semiconductors-edited.ppt

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Introduction to Semiconductors-edited.ppt

  • 1. What is a Semiconductor? Microprocessors LED Transistors Capacitors
  • 3. Range of Conduciveness The semiconductors fall somewhere midway between conductors and insulators.
  • 4. Range of Conduciveness Semiconductors have special electronic properties which allow them to be insulating or conducting depending on their composition.
  • 5. 1824 John Jacob Berzelis First to isolate and identify silicon. Remains little more than a scientific curiosity until the 1900s.
  • 6. 1833 Resistance (Ohms) Temperature (ºC) Michael Faraday Discovers that electrical resistively decreases as temperature increases in silver sulfide. This is the first investigation of a semiconductor.
  • 7. Lab: Metals vs. Semiconductors
  • 8. Lab: Metals vs. Semiconductors Temperature Copper Germanium 0ºC 31Ω 5.2Ω 25ºC 33Ω 4.2Ω 50ºC 37Ω 1.2Ω 75ºC 41Ω 0.63Ω 100ºC 44Ω .029Ω Data Chart
  • 9. 1873 William Smith Discovers the photoconductivity of selenium and invents a selenium photometer.
  • 11. 1874 Ferdinand Braun The first semiconductor device was born.
  • 12. Radio receivers required a device called a rectifier to detect signals. He used the rectifying properties of the galena crystal, a semiconductor material composed of lead sulfide, to create the cat's whisker diode for this purpose.
  • 13. 1927 Sommerfeld Bloch Applied quantum mechanics to solids, helping explain the conduction of electricity in semiconductors.
  • 15. Valence Band Most electrons remain bound to the atoms in this band. The highest occupied energy band is called the valence band.
  • 16. Conduction Band The conduction band is the band of orbitals that are high in energy and are generally empty. It is the band that accepts the electrons from the valence band.
  • 17. Energy Gap The “leap” required for electrons from the Valence Band to enter the Conduction Band.
  • 19. Conductors In a conductor, electrons can move freely among these orbitals within an energy band as long as the orbitals are not completely occupied.
  • 20. Conductors In conductors, the valence band is empty.
  • 22. Conductors Also in conductors, the energy gap is nonexistent or relatively small.
  • 23. Insulators In insulators, the valence band is full.
  • 25. Insulators Also in insulators, the energy gap is relatively large.
  • 26. Semiconductors In semiconductors, the valence band is full but the energy gap is intermediate. Semiconductor materials such as Ge and Si that show a reduction in resistance with increase in temperature are said to have a negative temperature coefficient.
  • 28. Semiconductors Only a small leap is required for an electron to enter the Conduction Band.
  • 30. Band Diagrams 1 eV = 1.6 x10-19 J
  • 32. Silicon is a very common element, the main element in sand & quartz.
  • 34. Intrinsic Silicon A silicon crystal is different from an insulator.
  • 35. Intrinsic Silicon At any temperature above absolute zero temperature, there is a finite probability that an electron in the lattice will be knocked loose from its position.
  • 36. Intrinsic Silicon The electron in the lattice knocked loose from its position leaves behind an electron deficiency called a "hole".
  • 37. Current Flow If a voltage is applied, then both the electron and the hole can contribute to a small current flow.
  • 38. Impurity A semiconductor material that has been subjected to the doping process is called an extrinsic material.
  • 39. Doping Doping (adding an impurity) can produce 2 types of semi-conductors depending upon the element added.
  • 40. P-Type Doping In P-type doping, boron or gallium is the dopant. The diffused impurities with three valence electrons are called acceptor atoms.
  • 42. P-Type Doping Boron, gallium and indium each have only three outer electrons. When mixed into the silicon lattice, they form "holes" in the lattice where a silicon electron has nothing to bond to.
  • 43. P-Type Doping The absence of an electron creates the effect of a positive charge, hence the name P-type. Holes can conduct current. A hole happily accepts an electron from a neighbor, moving the hole over a space. P-type silicon is a good conductor.
  • 44. N-Type In N-type doping, phosphorus or arsenic is added to the silicon in small quantities. The n-type is created by introducing those impurity elements that have five valence electrons (pentavalent), such as antimony, arsenic, and phosphorus.
  • 46. N-Type Phosphorus and arsenic each have five outer electrons, so they're out of place when they get into the silicon lattice. The fifth electron has nothing to bond to, so it's free to move around.
  • 47. N-Type It takes only a very small quantity of the impurity to create enough free electrons to allow an electric current to flow through the silicon. N-type silicon is a good conductor. Electrons have a negative charge, hence the name N-type.
  • 48. Diffused impurities with five valence electrons are called donor atoms.
  • 50. P-N Junction We create a p-n junction by joining together two pieces of semiconductor, one doped n-type, the other p-type.
  • 51. P-N Junction In the n-type region there are extra electrons and in the p-type region, there are holes from the acceptor impurities .
  • 52. P-N Junction In the p-type region there are holes from the acceptor impurities and in the n-type region there are extra electrons.
  • 53. P-N Junction When a p-n junction is formed, some of the electrons from the n-region which have reached the conduction band are free to diffuse across the junction and combine with holes.
  • 54. P-N Junction Filling a hole makes a negative ion and leaves behind a positive ion on the n-side. A space charge builds up, creating a depletion region.
  • 55. P-N Junction This causes a depletion zone to form around the junction (the join) between the two materials. This zone controls the behavior of the diode.
  • 56. Forward Biasing Forward biasing the p-n junction drives holes to the junction from the p-type material and electrons to the junction from the n-type material.
  • 57. Forward Biasing At the junction the electrons and holes combine so that a continuous current can be maintained.
  • 58. Diode A diode is the simplest possible semiconductor device.
  • 59. One Way Electric “Turnstile” A diode allows current to flow in one direction but not the other.
  • 60. Jumping If you apply enough reverse voltage, the junction breaks down and lets current through.
  • 61. Reverse Biasing The application of a reverse voltage to the p-n junction will cause a transient current to flow as both electrons and holes are pulled away from the junction.
  • 62. Reverse Biasing When the potential formed by the widened depletion layer equals the applied voltage, the current will cease except for the small thermal current.
  • 63. This voltage is needed to start the hole-electron combination process at the junction. When forward-biased, there is a small amount of voltage necessary to get the diode going. In silicon, this voltage is about 0.7 volts.
  • 64. There exists a potential difference across a depletion layers is called barrier potential. It depends on type of semiconductor material, amount of doping and temperature.
  • 65. Diode Characteristic When reverse-biased, an ideal diode would block all current. A real diode lets perhaps 10 microamps through -- not a lot, but still not perfect.
  • 66. Diode Characteristic Usually, the breakdown voltage is a lot more voltage than the circuit will ever see, so it is irrelevant.
  • 67. Zener Diode • Definition: Zener diode is specially designed for operation in the breakdown region in reverse bias condition. It is also called breakdown diode. In order to achieve sharp breakdown voltage, it is properly doped. American Scientist C. Zener explained the phenomenon of the breakdown. Symbol of Zener Diode
  • 68. Working Principle of Zener Diode • A Zener diode is similar to conventional PN Junction diode except that it is properly doped to achieve sharp breakdown voltage. There are two types of mechanism by which breakdown can occur at reverse PN junction that are avalanche and Zener breakdown. Zener Breakdown • Zener breakdown occurs due to high reverse Voltage. When the high reverse voltage is applied the width of depletion layer increases. Due to this potential barrier increases and a high electric field is generated at the junction. This high electric field breaks the covalent bond and a large number of minority charge carrier are generated. • Thus, current increases suddenly due to the movement of minority charge carriers and sometimes it leads to the breakdown of the junction. This is called of Zener breakdown. This is observed in diodes having a reverse voltage of less than 5 volts.
  • 69. Avalanche Breakdown •Avalanche Breakdown mechanism comes into picture when the reverse voltage becomes extremely high. At such a high reverse voltage, the minority carriers get extremely high kinetic energy. Due to which they easily detach electrons from the covalent bond. •Thus, these free electrons, in turn, collide with other atoms to liberate more electrons. In this way, the current becomes very large that it leads to the breakdown of the diode. Avalanche breakdown occurs when the reverse voltage becomes higher than 5V. A Zener diode can use any of these two breakdown mechanisms. Although there are two types of breakdown mechanism, still only name Zener is preferred. Silicon and Germanium both can be used for the construction of Zener diode, but Silicon is often used because of it can operate at higher temperature, and current capability of silicon is high.
  • 70. Volt-Ampere Characteristics of Zener diode • When the reverse voltage increases at a particular point, the junction breakdowns due to large reverse current. The voltage at which current starts increasing rapidly and the stage of breakdown is reached it is called Zener Voltage. The current which increases rapidly is called Zener Current. • The diagram represents the Volt-Ampere Characteristics of Silicon and Germanium diodes. It is operated in breakdown region, and the current is limited by dynamic resistance called zener impedance. The magnitude of zener voltage is dependent on the amount of doping.
  • 72. • The forward Characteristics of Zener diode is similar to that of ordinary PN Junction Diode. But the reverse characteristics are slightly different. • During the operation in breakdown region, it does not burn out immediately. As long as the current through the diode is limited by the external circuit within permissible values, it does not burn out. • A heavily doped diode will have very thin depletion layer. Thus, Zener voltage will be very low. In this way, depletion layer and zener voltage can be controlled with the help of doping concentration.
  • 73. Applications of Zener Diode 1. Zener Diode as Voltage Regulator: Voltage regulator is a device which maintains constant output voltage without bothering about variation in input voltage and load current. Zener diode is used as the voltage regulator.
  • 74. 2. For Switching Operations: Zener diode is used as a switch. It is because of its ability to produce change from low current to high current. Thus, it is used as a switch. 3. As Clipper: Zener diode is used in wave shaping circuit as a clipper. It is used to clip input waveform in specific applications. 4. As a reference element: In various circuits reference elements are required for comparing voltages to a reference value. Thus, in such circuits, Zener diode is used as a reference element. 5. Meter protection: Zener diode is used in electronics circuit for the protection of multimeter. In some cases, excess current flows through a circuit and damage the multimeter. Thus, Zener diodes protect it from damage by providing voltage regulation. •Zener diode is significant to use in breakdown region. Due to its doping characteristics, the zener diode is made to use at high breakdown voltage. Applications of Zener Diode
  • 75. PARAMETERS ZENER BREAKDOWN AVALANCHE BREAKDOWN Basic Definition It occurs when the electric field is created due to high reverese voltage. It occurs when high velocity electrons collide with bounded electrons. (due to kinetic energy) Reverse Voltage Range Less than 5 V More than 5 V Doping density High Doping density Low doping density Temperature Coefficient Exhibit Negative temperature coefficient Exhibit Positive temperature coefficient Nature of V-I Characteristics Very Sharp Not as sharp as Zener Breakdown Mechanism Due to collision between electrons Due to High electric field Differences between Avalanche and Zener Breakdown
  • 77. Differences between Normal and Zener Diode PARAMETERS DIODE ZENER DIODE Definition Diode is a semiconductor device which conducts only in forward biased. Zener diode is semiconductor device which can conduct in forward as well as reversed biased. Operation in Reverse Biased It gets damaged in reverse biased. It can operate without getting damaged. Circuit Symbol Doping Intensity In normal diodes doping intensity is low. In Zener diode doping intensity is high to achieve sharp breakdown. Application Diode is used in rectifiers, clippers, clampers etc. Zener diode is mostly used in voltage regulator.
  • 78. 1947 Working at Bell Telephone, they were trying to understand the nature of the electrons at the interface between a metal and a semiconductor (germanium).
  • 79. First Transistor It consisted of a plastic triangle lightly suspended above a germanium crystal which itself was sitting on a metal plate attached to a voltage source.
  • 80. A strip of gold was wrapped around the point of the triangle with a tiny gap cut into the gold at the precise point it came in contact with the germanium crystal.
  • 81. The germanium acted as a semiconductor so that a small electric current entering on one side of the gold strip came out the other side as a proportionately amplified current.
  • 82. Transistors didn't need time to "warm up" like the heaters in vacuum tube circuits.
  • 83. Transistor A transistor is a semiconductor device commonly used to amplify or switch electronic signals.
  • 84. The transistor is a three terminal device and consists of three distinct layers.
  • 85. Two of them are doped to give one type of semiconductor and the there is the opposite type, i.e. two may be n-type and one p-type, or two may be p-type and one may be n-type. They are designated either P-N-P (PNP) types of N-P- N (NPN).
  • 86. When discussing NPN transistors the N-Type semiconductor material on one side of the wafer is designated an emitter and it is most often connected to a negative electrical current.
  • 87. The P-Type material in the middle is the base. The N-Type material on the other side of the base is called the collector.
  • 88. Highly automated manufacturing processes, resulting in low per-unit cost. Transistor Advantages Extremely long life. Higher reliability and greater physical ruggedness.
  • 89. Small size and minimal weight, allowing the development of miniaturized electronic devices. Lower possible operating voltages, making transistors suitable for small, battery-powered applications.
  • 90. Rectifiers The most popular application of the diode.
  • 91. Most electronics need a direct current to function, but the standard form of electricity that is transmitted to homes is alternating current.
  • 92. Rectifiers are needed to change the alternating current into direct current inside the electronics so that they can function correctly.
  • 93. Rectification is the conversion of alternating current (AC) to direct current (DC).
  • 94. Rectifiers This involves a device that only allows one-way flow of electrons, which is exactly what a semiconductor diode does.
  • 95. Half-Wave Rectifiers The simplest kind of rectifier circuit is the half-wave rectifier. It only allows one half of an AC waveform to pass through to the load.
  • 96. Half-wave rectification is a very simple way to reduce power to a resistive load. Some two-position lamp dimmer switches apply full AC power to the lamp filament for “full” brightness and then half-wave rectify it for a lesser light output.
  • 98. 1959 The First I.C. Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Camera, came up with a solution to the problem of large numbers of components, and the integrated circuit was developed.
  • 99. Instead of making transistors one-by-one, several transistors could be made at the same time, on the same piece of semiconductor( a silicon wafer). Not only transistors, but other electric components such as resistors, capacitors and diodes could be made by the same process with the same materials.
  • 100. 1970 8080 8–bit processor 4004 4–bit unit First microprocessor invented at Intel. First commercial MPU in 1975.
  • 101. 1981 The IBM PC model 5150 was announced at a press conference in New York on August 12, 1981 and became available for purchase in early Fall 1981.
  • 102. The base model retailed for $2880! This included 64 kilobytes of RAM and a single- sided 160K 5.25" floppy drive. The IBM PC was powered by a 4.77 MHz Intel 8088 processor.
  • 104. Trends in Semiconductors Smaller Transistors Higher Switching Speeds Declining Costs
  • 105. The semiconductor industry has been successful in its consistent efforts to reduce feature size on a chip.
  • 106. 55,000,000 transistors 105,900,000 transistors Smaller features mean denser packing of transistors, which leads to more powerful computers, more memory, and hopefully lower costs.

Editor's Notes

  • #7: This lab, students graphed the next slides data.
  • #8: Students’ graph should illustrate that resistance (ohms) decreases in a metal as temperature rises but with a semiconductor (germanium), the exact opposite happens.
  • #78: John Bardeen and Walter Brattain, working at Bell Telephone Laboratories, were trying to understand the nature of the electrons at the interface between a metal and a semiconductor (germanium). They realized that by making two point contacts very close to one another, they could make a three terminal device - the first "point contact" transistor were very impressed that it didn't need time to "warm up" (like the heaters in vacuum tube circuits). They immediately realized the power of this new technology.
  • #89: No warm-up period for cathode heaters required after power application. Lower power dissipation and generally greater energy efficiency. Some transistorized devices produced more than 30 years ago are still in service. Complementary devices available, facilitating the design of circuits, something not possible with vacuum tubes. Insensitivity to mechanical shock and vibration, thus avoiding the problem of microphonics in audio applications.
  • #91: Rectifiers are used in the vast majority of consumer electronics today and are required for most devices to work properly. Because of this,
  • #97: For most electrical demands, a bridge rectifier is used. A rectifier bridge is four diodes configured so that the output always has the same polarity regardless of the polarity of the input. Rectifier bridges are most often used to convert alternating current into full-wave direct current for power supplies and throttles.
  • #104: Silicon has been the heart of the world's technology boom for nearly half a century, but microprocessor manufacturers have all but squeezed the life out of it. The current technology used to make microprocessors reached its limit around 2005.
  • #107: Lithography is akin to photography in that it uses light to transfer images onto a substrate. In the case of a camera, the substrate is film. Silicon is the traditional substrate used in chip making. To create the integrated circuit design that's on a microprocessor, light is directed onto a mask. A mask is like a stencil of the circuit pattern. The light shines through the mask and then through a series of optical lenses that shrink the image down. This small image is then projected onto a silicon, or semiconductor, wafer. The wafer is covered with a light-sensitive, liquid plastic called photoresist. The mask is placed over the wafer, and when light shines through the mask and hits the silicon wafer, it hardens the photoresist that isn't covered by the mask. The photoresist that is not exposed to light remains somewhat gooey and is chemically washed away, leaving only the hardened photoresist and exposed silicon wafer. The key to creating more powerful microprocessors is the size of the light's wavelength. The shorter the wavelength, the more transistors can be etched onto the silicon wafer. More transistors equals a more powerful, faster microprocessor. That's the big reason why an Intel Pentium 4 processor, which has 42 million transistors, is faster than the Pentium 3, which has 28 million transistors.
  • #108: An international science team from Penn State University in the United States and the University of Southampton in the United Kingdom has developed a process for growing a single-crystal semiconductor inside the tunnel of a hollow optical fiber.  The device adds new electronic capabilities to optical fibers, whose performance in electronic devices such as computers typically is degraded by the interface between the fiber and the device. 
  • #109: Now, chipmakers will have to look to other technologies to cram more transistors onto silicon to create more powerful chips The key to creating more powerful microprocessors is the size of the light's wavelength. The shorter the wavelength, the more transistors can be etched onto the silicon wafer. More transistors equals a more powerful, faster microprocessor.
  • #110: In an effort to help create faster, better and cheaper light sources for chips, UC San Diego researchers, in collaboration with Cymer, Inc., are developing laser-produced light sources for next generation Extreme Ultraviolet Lithography (EUVL).
  • #111: LEDs are based on the semiconductor diode.
  • #112: Instead of using silicon as the semiconductor, we use a different material, notably an alloy of aluminum and gallium arsenide (indium gallium arsenide phosphide is another popular choice). Electrons are injected into the diode, they combine with holes, and some of their excess energy is converted into photons, which interact with more incoming electrons, helping to produce more photons—and so on in a kind of self-perpetuating process called resonance. This repeated conversion of incoming electrons into outgoing photons is analogous to the process of stimulated emission that occurs in a conventional, gas-based laser.
  • #113: Claire Gmachl holding a chip containing eight quantum cascade (QC) lasers. QC lasers are the world's first semiconductor lasers that can be tailored to emit light at any specific wavelength within a wide range of the infrared spectrum. The emitted wavelength is not determined by the band gap of the used material but on the thickness of the constituent layers The technology allows for the detection and monitoring of environmental gases in sub parts per Million sensitivity.
  • #114: Quantum cascade lasers are small and efficient sources of mid-infrared laser beams, which are leading to new devices for medical diagnostics and environmental sensing. Gmachl's group discovered that a quantum cascade laser they had built generated a second beam with very unusual properties, including the need for less electrical power than the conventional beam. "If we can turn off the conventional beam, we will end up with a better laser, which makes more efficient use of electrical power," said Gmachl.
  • #117: Solar powered air conditioner.