Nrel pid presentation_csi
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This document discusses considerations for developing a standardized test for potential-induced degradation of crystalline silicon photovoltaic modules. It describes the motivation for such a test due to module degradation observed in fielded systems. The goals, factors, and levels to be considered in developing the test procedure are outlined based on experimental data. Key factors discussed include voltage, mounting/grounding, humidity, temperature, and appropriate acceleration levels to reproduce field failure modes within a practical test time. The test aims to evaluate module durability under long-term system voltage stress conditions.
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Test factors
Al foil, carbon film, etc, for surface conductivity
+ Quick/cheap
+ Good screening test
– Won’t differentiate humidity effects
(water leaches Na‐lime glass)
– unclear how it connects to textured glass
– bypasses frame or laminate mount’s ability to
reduce degradation, limiting fixes to PID
www.bangkoksolar.com
From: C. R. Osterwald, Solar Energy Materials & Solar Cells 79 (2003) 21–33
* Modules that lack a frame and use mounting points bonded to the backsheet glass
show no damage [to the extent tested].
* Damage rates can be slowed if leakage currents that are caused by voltage
potentials between the frame and the internal circuitry are reduced.
• Voltage
• Mounting/grounding
• Humidity, surface
conductivity
• Temperature
Photo: Erik Eikelboom 2011:10:17](https://image.slidesharecdn.com/nrelpidpresentationcsi-130625165442-phpapp01/85/Nrel-pid-presentation_csi-16-320.jpg)
Nrel pid presentation_csi
- 1. NREL is a national laboratory of the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, operated by the Alliance for Sustainable Energy, LLC. Considerations for a Standardized Test for Potential‐Induced Degradation of Crystalline Silicon PV Modules 2012 PVMRW Peter Hacke February 29, 2012 NREL/PR-5200-54581
- 3. 3 Motivation • Over the past decade, there have been observations of module degradation and power loss because of the stress that system voltage bias exerts. • More sensitive modules • Higher system voltage • This results in part from qualification tests and standards not adequately evaluating for the durability of modules to the long‐term effects of high voltage bias that they experience in fielded arrays. • This talk deals with factors for consideration, progress, and information still needed for a standardized test for degradation due to system voltage stress. “Oh no! our modules are down 40%, we think it is potential–induced degradation” ‐anonymous module manufacturer, 2010
- 4. 4 Timeline for system voltage durability • Need for a better standard for system voltage durability brought up several times in the last decades, but did not get traction. Lack of field data, proposed tests overly harsh. • I brought this up again in the Fall 2010 Working Group 2 (WG 2) meeting (Köln) and got a small working together, but most people were in the process of getting experience about system voltage effects. • Spring 2011 WG 2 meeting (Shanghai), indications of increased urgency for a standard, assembled more people for this task team. • Fall 2011 WG 2 meeting (Montreal), presented an initial draft for comments. • Present day…
- 5. 5 Goals for a standard – two steps 1. Stand‐alone test (new standard): System voltage durability test for crystalline silicon modules – design qualification and type approval, submitted as a New Work Item Proposal to IEC, Dec. 2011. 2. Incorporate test into IEC 61215 Seek to incorporate above stand‐alone test with any necessary supplements within IEC 61215 – add test after clause 10.13, Damp Heat Test 1000 h under consideration.
- 6. 6 Design standard for a climate: Köppen climate classification GROUP C: Temperate/mesothermal climates Maritime/oceanic climates: (Cfb, Cwb, Cfc) Humid subtropical climates (Cfa, Cwa) Consider for standard: Humid subtropical, and Humid Oceanic. Need to design for the market. More stressful environments exist, and that should be noted in the eventual standard.
- 7. 7 Experimental Overview 1) HV Test bed in Florida USA • 2 module types fielded in February 2011 2) Chamber testing of the same 2 module designs tested in Florida • 85% RH; 85°C, 60°C, 50°C Pmax vs t 3) Comparison of failure rates for determination of acceleration factors and failure mechanisms for input into standardized test
- 8. 8 Definitions S. Pingel et al., “Potential Induced Degradation of Solar Cells and Panels,” 35th IEEE PVSC, Honolulu, 2010, pp. 2817–2822. Electroluminescence of mc‐Si module strings indicating shunting in the negative portion of a center mounted or floating string Electrochemical corrosion c‐Si Mon & Ross JPL, 1985 Polarization c‐Si Swanson SunPower, 2005 ?Other power loss thin‐films unpublished Delamination, corrosion a‐Si Wohlgemuth BP Solar, 2000
- 9. 9 Definitions S. Pingel et al., “Potential Induced Degradation of Solar Cells and Panels,” 35th IEEE PVSC, Honolulu, 2010, pp. 2817–2822. Electroluminescence of mc‐Si module strings indicating shunting in the negative portion of a center mounted or floating string Electrochemical corrosion c‐Si Mon & Ross JPL, 1985 Polarization c‐Si Swanson SunPower, 2005 ?Other power loss thin‐films unpublished Delamination, corrosion a‐Si Wohlgemuth BP Solar, 2000 Needs an unambiguous name
- 10. 10 Definitions – this standard will cover S. Pingel et al., “Potential Induced Degradation of Solar Cells and Panels,” 35th IEEE PVSC, Honolulu, 2010, pp. 2817–2822. Electroluminescence of mc‐Si module strings indicating shunting in the negative portion of a center mounted or floating string Electrochemical corrosion c‐Si Mon & Ross JPL, 1985 Polarization c‐Si Swanson SunPower, 2005 ?Other power loss thin‐films unpublished Delamination, corrosion a‐Si Wohlgemuth BP Solar, 2000
- 12. 12 System voltage durability • Designed to cover c‐Si • More than just PID of conventional cells/modules ‐ Polarization (like SunPower) ‐ Non‐reversible elements of PID ‐ Rear junction bifacial cells. ECN bifacial/Yingli ‘Panda’ ‐ HIT cells ‐ Framed/unframed modules of various types ‐ Long term view for harmonization with thin film system voltage durability
- 14. 14 Test factors • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature -40% -35% -30% -25% -20% -15% -10% -5% 0% 5% 1 2 3 4 5 6 7 8 9 Voltage position (1=negative, 9=most positive) %changeinpower Power Loss vs. Position in String: Polarization, SunPower Modules R . M. Swanson, The surface polarization effect in high-efficiency solar cells, PVSEC-15, Shanghai
- 15. 15 Test factors Completing the circuit to ground in a manner representative of mfg. module mounting scheme Leakage current may be measured as in indicator of module package resistance • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature
- 16. 16 Test factors Al foil, carbon film, etc, for surface conductivity + Quick/cheap + Good screening test – Won’t differentiate humidity effects (water leaches Na‐lime glass) – unclear how it connects to textured glass – bypasses frame or laminate mount’s ability to reduce degradation, limiting fixes to PID www.bangkoksolar.com From: C. R. Osterwald, Solar Energy Materials & Solar Cells 79 (2003) 21–33 * Modules that lack a frame and use mounting points bonded to the backsheet glass show no damage [to the extent tested]. * Damage rates can be slowed if leakage currents that are caused by voltage potentials between the frame and the internal circuitry are reduced. • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature Photo: Erik Eikelboom 2011:10:17
- 17. 17 Test factors Module leakage vs. humidity P. Hacke et. al., 25th EPVSEC, 6‐10 September 2010, Valencia, Spain Surface conductivity of soda‐lime glass vs. humidity Because we need to measure the performance of not only the module laminate, but the frame or mounts, the standard as written uses humidity for the circuit to ground. • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature
- 18. 18 Test factors Degradation vs. time of mc-Si modules, -600 V, 85% RH P. Hacke et al., Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV Modules Undergoing Degradation by System Voltage Stress, 38th IEEE PVSC, Austin, 2012 50 °C 60°C 85°C • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature RH= 85% • Temperature dependence, repeatable • Arrhenius behavior over temperature range, unless alternate conduction paths exist
- 19. 19 Test levels D. Buemi, Thin‐Film PV Powers the Number 1 Global Solar Integrator, davebuemi.com, accessed Feb 22, 2012 • System voltage, now effectively governed by IEC 61730‐2’s partial discharge test, not PID, generally • Test at rated system voltage • Maximum nameplate value (behind‐the‐ fence/utilities don’t run to UL code) • Both polarities (if not polarity is specified) • Slight acceleration since actual operating V lower • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature
- 20. 20 “For continuous metallic frames encasing the perimeter of the module, the ground terminal of the high voltage power supply shall be connected … to a module grounding point of the module. “ “If (1) the PV module is provided or is specified for use with means for mounting and (2) the module is designed and specified not to be connected to ground, then such method of mounting the module shall be implemented to the extent possible.” Test levels • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature http://www.solarframeworks.com SolarFrameWorks Co, BIPV Cool Ply Accessed Feb 22, 2012 Draft standard:
- 21. 21 Test levels • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature • 85% RH damp heat chamber, a level that chambers are capable of holding, uniformly
- 22. 22 Test levels • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature What level of stress in an accelerated tests reproduces well the failure modes we seek to test for ? How long should it be stressed at that temperature? What is the acceleration factor?
- 24. 24 Step‐stress for determination of failure modeOpticalELThermography SiNx oxidation: not seen in field! PL (in Voc) Dark=recombination PL (in Jsc) Light=series resistanceMixed mode – Series resistance/recombination PID recombination 50°C, 50%RH 70°C, 70%RH 85°C, 85%RH Each step: –1000 V stress 145 h +1000 V recovery 145 h (145 h preconditioning at T & RH level
- 27. 27 Performance of two module types In Florida, USA –600 V applied logarithmically with irradiance 333 days In chamber 85% RH –600 V Type 2, 85° Type 2, 60° Type 2, 50° Type 1 Type 2 Module Type 1: Acceptable performance in the field survives with less than 5% power drop in chamber with 85% RH, 60°C, rated system voltage, for 96 h Module Type 2: 5% power drop in 4934 h in Florida and 12 h in chamber at 60° C, (considered a failing module) More details at 2012 IEEE PVSC
- 28. 28 Test levels Use condition: Florida, USA, ‐600 V simulated array V Acceleration condition: 85% RH, T as plotted Failure: 0.95 Pmax_0 AF = 427 at 60°C, 85% RH Test duration, 96 h Field equivalent: 4.7 y “The following conditions shall be applied: • Chamber air temperature 60 °C ± 2°C • Chamber relative humidity 85 % ± 5 % RH • Test duration 96 h • Voltage: module rated system voltage and polarities” (one module per polarity)” • Voltage • Mounting/grounding • Humidity, surface conductivity • Temperature Draft standard:
- 29. 29 Next steps: Testing at multiple labs Determine reproducibility • 2‐3 samples per condition • Presumably 85% RH‐60°C, but consider alternates for post IEC‐61215 tests • 5 labs • NREL • ASU • …let us know if you are interested! • Samples from 3 manufacturers
- 30. Thank you