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INSULATORS/CONDUCTORS
• Materials that have large bandgap energies (in
the range of 3 to 6 electron- volts (eV)) are
insulators, because at room temperature,
essentially no free electron exists in the
material
• Materials that contain very large number of free
electrons at room temperature are conductors
SEMICONDUCTORS
• In a semiconductor, the bandgap energy is in
the order of 1 eV. The net flow of free electrons
causes a current.
• In a semiconductor, two types of charged particles
contribute to the current: the negatively charged
electrons and the positively charged holes
MOVEMENT OF HOLES
A two- dimensional representation of the silicon
crystal showing the movement of the positively
charged hole
EXTRINSIC SEMICONDUCTORS /
DOPING
• The phosphorus (group V) atom is called donor
impurity because it donates an electron that is free
to move
• The boron (group III) has accepted a valence
electron (or donated a hole), it is therefore sailed
acceptor impurity
N – TYPE SEMICONDUCTOR
Two-dimensional representation of a silicon
lattice doped with a phosphorus atom
P – TYPE SEMICONDUCTOR
Two-dimensional representation of a
silicon lattice doped with a boron atom
INTRODUCTIONTO
SEMICONDUCTOR DEVICE
P-N JUNCTION FORMATION
• Electrons and holes remain staying close to the p-n junction
because negative and positive charges attract each other.
•Negative charge stops electrons from further diffusion
•Positive chaige stops holes from further dilfusion
•The diffusion forms a dipole charge layer at the p-n junction
interface.
•There is a “built-in” VOLTAGE at the p-n junction interface that
prevents penetration of electrons into the p-side and holes into
the n-side.
Diode Circuit Symbois
N material
(cathode)
Reverse
Bias
P material
(anode)
Forward
Bias
When “plus” is applied to the p-
side, the current is high. This
voltage polarity is called
FORWARD.
When “plus” is applied to the n-side,
the current is nearly zero. This
voltage polarity is called REVERSE.
P- N Diode Circuit Notation
T diode i-v relatioaship with s•rm scales cxps‹sted and others compressed in order la
reveal deteJI«.
The experimental I-V characteristic of a Si diode
'Z
• A Zener is a diode operated
in reverse
bias at the Peak Inverse
Voltage (PIV)
called the Zener Voltage (VZ).
• Common Zener
Voltages: 1.8V to 200V
(a)
ZENER
DIODE
pn junction diode, rectifiers with and with out filters
RECTIFICATION
• Conversion of ac to pulse setting dc
• Full-Wave Rectification: Rectifies both halves of the
AC waveform.
• Half-Wave Rectification: Rectifies only one half of the
AC waveform.
HALFWAVE RECTIFIER
FULL WAVE RECTIFIER
FILTERS
• We have now used diodes to produced a
pulsed dc signal.
• Most equipment requires “regulated” dc
— We must remove the “ripple”
— Ripple is departure of waveform from
pure dc (!Iat, constant voltage level)
• Frequency — so far we have seen pulsed
dc at the same frequency as the input (1/2 wave) or
twice the line frequency (full wave rectifier)
• Amplitude — a measure of the effectiveness of the
filter
FULL WAVE CAPACITIVE FILTER
FULL WAVE RECTIFIER CIRCUIT
WITH INDUCTOR FILTER

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pn junction diode, rectifiers with and with out filters

  • 1. INSULATORS/CONDUCTORS • Materials that have large bandgap energies (in the range of 3 to 6 electron- volts (eV)) are insulators, because at room temperature, essentially no free electron exists in the material • Materials that contain very large number of free electrons at room temperature are conductors
  • 2. SEMICONDUCTORS • In a semiconductor, the bandgap energy is in the order of 1 eV. The net flow of free electrons causes a current. • In a semiconductor, two types of charged particles contribute to the current: the negatively charged electrons and the positively charged holes
  • 3. MOVEMENT OF HOLES A two- dimensional representation of the silicon crystal showing the movement of the positively charged hole
  • 4. EXTRINSIC SEMICONDUCTORS / DOPING • The phosphorus (group V) atom is called donor impurity because it donates an electron that is free to move • The boron (group III) has accepted a valence electron (or donated a hole), it is therefore sailed acceptor impurity
  • 5. N – TYPE SEMICONDUCTOR Two-dimensional representation of a silicon lattice doped with a phosphorus atom
  • 6. P – TYPE SEMICONDUCTOR Two-dimensional representation of a silicon lattice doped with a boron atom
  • 8. P-N JUNCTION FORMATION • Electrons and holes remain staying close to the p-n junction because negative and positive charges attract each other. •Negative charge stops electrons from further diffusion •Positive chaige stops holes from further dilfusion •The diffusion forms a dipole charge layer at the p-n junction interface. •There is a “built-in” VOLTAGE at the p-n junction interface that prevents penetration of electrons into the p-side and holes into the n-side.
  • 9. Diode Circuit Symbois N material (cathode) Reverse Bias P material (anode) Forward Bias
  • 10. When “plus” is applied to the p- side, the current is high. This voltage polarity is called FORWARD. When “plus” is applied to the n-side, the current is nearly zero. This voltage polarity is called REVERSE. P- N Diode Circuit Notation
  • 11. T diode i-v relatioaship with s•rm scales cxps‹sted and others compressed in order la reveal deteJI«. The experimental I-V characteristic of a Si diode
  • 12. 'Z • A Zener is a diode operated in reverse bias at the Peak Inverse Voltage (PIV) called the Zener Voltage (VZ). • Common Zener Voltages: 1.8V to 200V (a) ZENER DIODE
  • 14. RECTIFICATION • Conversion of ac to pulse setting dc • Full-Wave Rectification: Rectifies both halves of the AC waveform. • Half-Wave Rectification: Rectifies only one half of the AC waveform.
  • 17. FILTERS • We have now used diodes to produced a pulsed dc signal. • Most equipment requires “regulated” dc — We must remove the “ripple” — Ripple is departure of waveform from pure dc (!Iat, constant voltage level) • Frequency — so far we have seen pulsed dc at the same frequency as the input (1/2 wave) or twice the line frequency (full wave rectifier) • Amplitude — a measure of the effectiveness of the filter
  • 19. FULL WAVE RECTIFIER CIRCUIT WITH INDUCTOR FILTER