SPICE MODEL of TLP521-2 SAMPLE A in SPICE PARK
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The document presents a detailed modeling report for the TLP521-2 photocoupler, manufactured by Toshiba, including various electrical characteristics and modeling parameters for devices like diodes and bipolar junction transistors. It contains simulation results, evaluation circuits, and comparison tables for input device characteristics, current transfer ratios, and switching times. The content also includes measurement vs. simulation data for different operating conditions and associated percentage errors.
SPICE MODEL of TLP521-2 SAMPLE A in SPICE PARK
- 1. Device Modeling Report COMPONENTS : PHOTOCOUPLER PART NUMBER : TLP521-2 MANUFACTURER : TOSHIBA REMARK : SAMPLE A Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(－)Node>VALUE={Expression} E<Name><(+)Node><(－)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS) E<Name><(+)Node><(－)Node>VALUE={Expression} CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Input Device Forward Current Characteristics Measurement Simulation Input Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Input Device Reverse Recovery Characteristics Measurement trj=120n(s) trb=288n(s) Conditions:Ifwd=Irev=0.04(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. LED IV Curve Characteristics Evaluation Circuit U1 1 8 2 7 3 6 4 5 TLP521_2 V1 I1 1.6Vdc 0mAdc 0 0 Simulation result Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Comparison Table Vfwd(V) Ifwd(A) % Error Measurement Simulation 0.0001 0.92 0.927116 0.773 0.0002 0.96 0.961572 0.164 0.0005 1.01 1.0076 -0.238 0.001 1.05 1.0427 -0.695 0.002 1.09 1.0785 -1.055 0.005 1.125 1.1283 0.293 0.01 1.165 1.1697 0.403 0.02 1.21 1.2182 0.678 0.05 1.31 1.3060 -0.305 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Transistor Saturation Characteristics Evaluation Circuit U1 1 8 2 7 3 6 4 5 TLP521_2 I1 I2 8mAdc 2.4mAdc 0 0 Simulation result Simulation Comparison Table Measurement Simulation % Error Vce (sat) 0.4 V 0.398485 V -0.379 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. CTR(Current Transfer Ratio) Characteristics Evaluation Circuit V2 U1 V3 1 8 0Vdc 0Vdc 2 7 3 6 4 5 V1 TLP521_2 I1 5Vdc 5mAdc 0 0 Simulation result Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Rise Curve Table CTR(%) If(mA) % Error Measurement Simulation 0.5 95 95.875 0.921 1 160 154.340 -3.538 3 250 246.570 -1.372 5 300 289.174 -3.609 8 330 328.211 -0.542 10 350 350.044 0.013 Fall Curve Table CTR(%) If(mA) % Error Measurement Simulation 10 350 350.044 0.013 20 280 268.431 -4.132 30 230 220.757 -4.019 40 190 186.974 -1.593 50 160 160.801 0.501 60 140 139.438 -0.401 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Switching Time Characteristics Evaluation Circuit V2 U1 1 8 0Vdc 2 7 3 6 R1 1.9k 4 5 I1 = 0 TLP521_2 I2 = 16m I1 TD = 10u TR = 10n TF = 10n V1 PW = 20u 5Vdc PER = 500u 0 0 Simulation result Simulation Comparison Table VCC=5V,IF=16mA,RL=1.9k Measurement Simulation % Error Ts (us) 15 14.966 -0.227 Toff (us) 25 24.920 -0.320 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005