SPICE MODEL of TPCF8104 (Professional+BDP Model) in SPICE PARK
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The document presents a detailed device modeling report for the power MOSFET part number TPCF8104 from Toshiba, including various circuit configurations, characteristics, and simulation results such as transconductance, gate charge, capacitance, and switching time. It includes comparisons between measurement and simulation data for key performance metrics, highlighting discrepancies in error percentages. The report concludes with additional insights into reverse recovery and Zener voltage characteristics.
SPICE MODEL of TPCF8104 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCF8104 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration Equivalent Circuit D S1 - - + + S S2 R2 DGD + - S + 10MEG - CGD R1 10M G Q1 S All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Transconductance Characteristic Circuit Simulation Result 15 14 13 12 11 10 9 gfs 8 7 6 5 4 3 Measurement 2 Simulation 1 0 1 2 3 4 5 - ID - Drain Current - A Comparison table gfs - Id(A) Error(%) Measurement Simulation 0.1 1.400 1.429 2.071 0.2 2.300 2.333 1.435 0.5 3.800 3.846 1.211 1 6.100 6.263 2.672 2 9.400 9.524 1.319 5 13.500 13.889 2.881 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Vgs-Id Characteristic Circuit Simulation result -10A -8A -6A -4A -2A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit U11 V3 0Vdc V2 V1 -10 TPCF8104 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Comparison Graph Circuit Simulation Result 5 Measurement BeeTech 4 - ID - Drain Current - A 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 - VGS - Gate to Source Voltage - V Simulation Result - VGS(V) - ID(A) Error (%) Measurement Simulation 0.1 1.800 1.848 2.667 0.2 1.900 1.902 0.105 0.5 1.950 1.984 1.744 1 2.050 2.08 1.463 2 2.180 2.213 1.514 5 2.450 2.478 1.143 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Rds(on) Characteristic Circuit Simulation result -3.5A -3.0A -2.5A -2.0A -1.5A -1.0A -0.5A 0A 0V -50mV -100mV -150mV -200mV I(V2) V_VDS Evaluation circuit U11 V2 0Vdc 0Vdc VDS VGS -10Vdc TPCF8104 0 Simulation Result ID=-3A, VGS=-10V Measurement Simulation Error (%) R DS (on) 0.021 0.021 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Circuit Simulation result 16V 12V 8V 4V 0V 0 10n 20n 30n 40n 50n -V(W1:4) Time*1mA Evaluation circuit ION = 0uA IOFF = 1mA W D2 I2 - I1 = 0 + 6 I1 Dbreak I2 = 1m W1 U11 TD = 0 TPCF8104 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -24 0 Simulation Result VDD=-24V,ID=-6A Measurement Simulation Error (%) ,VGS=-10V Qgs(nC) -4.700 -4.680 -0.426 Qgd(nC) -7.200 -7.191 -0.125 Qg -34.000 -34.247 0.726 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.2 90.000 90.000 0.000 0.5 73.000 73.300 0.411 1 55.000 55.600 1.091 2 40.000 39.800 -0.500 5 20.000 20.000 0.000 10 10.000 10.300 3.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.10us 2.13us V(L1:2) V(L2:1)/1.5 Time Evaluation circuit L2 R2 5 50nH -15Vdc RG L1 PER = 2000u V1 PW = 10u TF = 1n 30nH TR = 1n 4.7 U11 R1 TPCF8104 TD = 2u V2 = 20 V2 4.7 V1 = 0 0 Simulation Result ID=-3A, VDD=-15V Measurement Simulation Error(%) VGS=-0/10V Ton(ns) 12.000 12.107 0.892 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result -10A -3 -2.8 -8A -2.7 -2.6 -6A -2.5 -4A -2.4 -2.3 -2A -2.2 VGS=-2.1 V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit U11 V3 0Vdc V2 V1 0 TPCF8104 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U26 TPCF8104 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0.00 0.40 0.80 1.20 1.60 Source-Drain voltage VSD(V) Simulation Result - VSD(V) - IDR(A) %Error Measurement Simulation 1 0.720 0.722 0.278 2 0.760 0.758 -0.263 5 0.820 0.825 0.610 10 0.900 0.896 -0.444 20 1.000 1.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 1.00us 1.04us 1.08us 1.12us 1.16us 1.20us I(R1) Time Evaluation Circuit R1 50 U26 V1 = -9.4v V1 V2 = 10.6v D8104 TD = 50n TR = 10ns TF = 9ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 6.000 5.955 -0.750 Trb(ns) 29.000 29.092 0.317 Trr(ns) 35.000 35.047 0.134 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=6.000ns) Trb=29.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U26 0.01m R1 R2 TPCF8104 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006