SPICE MODEL of TPCP8402 (Standard+BDS N&P Model) in SPICE PARK
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The document is a comprehensive device modeling report for a power MOSFET (part number: TPCP8402) manufactured by Toshiba, detailing various model parameters including voltage, resistance, capacitance, and transconductance characteristics. It includes simulation results for a P-channel and N-channel MOSFETs, alongside comparison tables showing measurement vs. simulation data with error percentages. Additionally, the report outlines characteristics like gate charge, switching time, and ESD protection, providing insights into the performance of the device in electronic applications.
SPICE MODEL of TPCP8402 (Standard+BDS N&P Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model parameter) PART NUMBER: TPCP8402 MANUFACTURER: TOSHIBA Body Diode (Model parameter) / ESD Protection Diode Remark: Silicon N&P Channel MOS Type Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -1-
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -2-
- 3. P-Channel Model Transconductance Characteristic Circuit Simulation Result 100 Measurement Simulation TRANSCONDUCTANCE GFS(s) 10 1 0.1 0 0.5 1 1.5 2 DRIAN CURRENT ID (A) Comparison table gfs - Id(A) Error(%) Measurement Simulation 0.2 2.11 2.20 4.51 0.5 3.33 3.45 3.50 1 4.83 4.78 -1.06 2 6.67 6.62 -0.75 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -3-
- 4. P-Channel Model Vgs-Id Characteristic Circuit Simulation result -4.0A -3.0A -2.0A -1.0A 0A 0V -0.5V -1.5V -2.5V -3.5V -4.5V I(V3) V_VGS Evaluation circuit U1 TPCP8402 open open open open V3 0Vdc open V1 R1 VGS 100MEG -10Vdc 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -4-
- 5. P-Channel Model Comparison Graph Circuit Simulation Result 4 Measurement Simulation 3 - Drain Current ID (A) 2 1 0 0 1 2 3 4 5 - Gate - Source Voltage VGS (V) Simulation Result - VGS(V) - ID(A) Error (%) Measurement Simulation 0 1.8000 1.8000 0.0000 0.1 1.9200 1.9036 -0.8542 0.2 1.9700 1.9580 -0.6091 0.5 2.0500 2.0670 0.8293 1 2.2000 2.1914 -0.3909 2 2.3500 2.3705 0.8723 3 2.5000 2.5104 0.4160 4 2.6300 2.6300 0.0000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -5-
- 6. P-Channel Model Rds(on) Characteristic Circuit Simulation result -1.7A -1.5A -1.0A -0.5A 0A 0V -20mV -40mV -60mV -80mV -100mV -120mV -140mV -160mV -180mV I(V3) V_VDS Evaluation circuit U1 TPCP8402 open open open open V3 0Vdc open VGS VDS R1 100MEG -10Vdc 0Vdc 0 0 Simulation Result ID=-1.7A, VGS=-10V Measurement Simulation Error (%) R DS (on) 60 m 60 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -6-
- 7. P-Channel Model Gate Charge Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 0 2n 4n 6n 8n 10n 12n 14n 16n V(W1:4) Time*1mA Evaluation circuit U1 TPCP8402 open open open open open W - I1 TD = 0 + Dbreak Ropen I2 D1 -4Adc W1 100MEG IOFF = 1mA ION = 0A VD -24Vdc 0 0 Simulation Result VDD=-24V,ID=-3.4A Measurement Simulation Error (%) Qgs 1.400 nC 1.4074 nC 0.529 Qgd 2.700 nC 2.6790 nC -0.778 Qg 14.000 nC 8.1066 nC -42.096 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -7-
- 8. P-Channel Model Capacitance Characteristic Simulation Result Cbd(pF) - VDS(V) Error(%) Measurement Simulation 0.5 15.000 15.051 0.340 1 12.000 12.026 0.216 2 10.000 10.187 1.872 5 7.600 7.599 -0.014 10 6.000 6.124 2.070 20 5.000 5.059 1.175 30 4.500 4.566 1.463 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -8-
- 9. P-Channel Model Switching Time Characteristic Circuit Simulation result -20V -18V -16V -14V -12V ___ VOUT/1.5 ___ VGS -10V -8V -6V -4V -2V 0V 2V 4V 6V 8V 0.92us 0.96us 1.00us 1.04us 1.08us 1.12us V(3)/1.5 V(L3:1) Time Evaluation circuit U1 TPCP8402 open open open open RL 3 R1 L3 2 8.82 open 30nH 4.7 V1 = 0 V2 = -20 TD = 1u V1 Ropen TR = 10n R2 TF = 10n VD 100MEG PW = 10u 4.7 -15Vdc PER = 10m 0 0 Simulation Result ID= -1.7A, VDD=-15V Measurement Simulation Error(%) VGS=0/-10V ton 12.000 ns 11.984 ns -0.133 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 -9-
- 10. P- Channel Model Output Characteristic Circuit Simulation result -10A -10V -3.5V -6.0V -8A -4.5V -6A -2.8V -2.7V -4A -2.6V -2.5V -2A VGS=-2.3V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit U1 TPCP8402 open open open open V3 0Vdc open V1 R1 VGS 100MEG -10Vdc 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 10 -
- 11. P-Channel Model BODY DIODE Forward Current Characteristic Circuit Simulation Result 10A 1.0A 500mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(R1) V_V1 Evaluation Circuit R1 U1 TPCP8402 0.01m openopen open V1 Ropen 100MEG 0Vdc openopen 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 11 -
- 12. P-Channel Model Comparison Graph Circuit Simulation Result 10 Measurement Simulation Drain reverse Current - IDR (A) 1 0.1 0 0.3 0.6 0.9 1.2 1.5 Drain - Source Voltage VDS (V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.5 0.7300 0.7382 1.1214 1 0.7800 0.7830 0.3846 2 0.8350 0.8399 0.5868 5 0.9500 0.9547 0.4947 10 1.108 1.1062 -0.1625 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 12 -
- 13. P-Channel Model Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.98us 1.00us 1.02us 1.04us 1.06us I(R1) Time Evaluation Circuit R1 50 openopen open V1 = -9.6V V1 V2 = 10.8V U1 Ropen TD = 0 TPCP8402 TR = 10ns 1G TF = 5.7ns PW = 1us PER = 50us openopen 0 0 Compare Measurement vs. Simulation trj (ns) Measurement Simulation Error (%) trj (ns) 8.600 8.6033 0.038 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 13 -
- 14. P-Channel Model Reverse Recovery Characteristic Reference Trj=8.6 (ns) Trb=10.2 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 14 -
- 15. P-Channel Model ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 U1 TPCP8402 0.01m open open V1 open 0Vdc Ropen open 100MEG open 0 open 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 15 -
- 16. P-Channel Model Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 16 -
- 17. N-Channel Model Transconductance Characteristic Circuit Simulation Result 100 Measurement Simulation TRANSCONDUCTANCE GFS(s) 10 1 0.1 0 0.5 1 1.5 2 DRIAN CURRENT ID (A) Comparison table gfs Id(A) Error (%) Measurement Simulation 0.2 2.11 2.13 1.08 0.5 3.33 3.31 -0.66 1 4.65 4.63 -0.46 2 6.67 6.43 -3.59 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 17 -
- 18. N-Channel Model Vgs-Id Characteristic Circuit Simulation result 8.0A 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V I(Vsense) V_VGS Evaluation circuit U5 V3 0Vdc open open open open V1 R1 open VGS 100MEG TPCP8402 10Vdc 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 18 -
- 19. N-Channel Model Comparison Graph Circuit Simulation Result 8 Measurement Simulation 6 Drain Current ID (A) 4 2 0 0 1 2 3 4 5 Gate - Source Voltage VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0 2.3000 2.3000 0.0000 0.1 2.5200 2.5409 0.8294 0.2 2.6000 2.5971 -0.1115 0.5 2.7000 2.7096 0.3556 1 2.8300 2.8381 0.2862 2 3.0150 3.0227 0.2554 5 3.4000 3.3991 -0.0265 8 3.6800 3.6788 -0.0326 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 19 -
- 20. N-Channel Model Rds(on) Characteristic Circuit Simulation result 2.4A 2.2A 2.0A 1.8A 1.6A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A 0A 0V 20mV 40mV 60mV 80mV 100mV 120mV 140mV 160mV 180mV I(V3) V_VDS Evaluation circuit U2 0Vdc V3 open open open VDS R1 open open VGS 0Vdc 100MEG TPCP8402 10Vdc 0 0 Simulation Result ID=2.1A, VGS=10V Measurement Simulation Error (%) R DS (on) 38.000 m 38.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 20 -
- 21. N-Channel Model Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 2n 4n 6n 8n 10n 12n 14n 16n V(W1:3) Time*1mA Evaluation circuit U1 Vsense open open open W1 + I1 open open D1 Ropen - Dbreak 4Adc I2 W TPCP8402 100MEG TD = 0 ION = 0A IOFF = 1mA VD 0 24Vdc 0 Simulation Result VDD=24V,ID=4.0A Measurement Simulation Error (%) Qgs 1.700 nC 1.6964 nC -0.212 Qgd 2.400 nC 2.3978 nC -0.092 Qg 14.000 nC 7.5500 nC -46.071 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 21 -
- 22. N-Channel Model Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Measurement Simulation Error(%) 0.1 140.0000 141.0000 0.7143 0.2 108.0000 107.5000 -0.4630 0.5 70.0000 69.5000 -0.7143 1 50.0000 49.8875 -0.2250 2 35.0000 34.6560 -0.9829 5 21.0000 20.9978 -0.0105 10 14.0000 14.5679 4.0563 20 9.5000 9.6499 1.5774 30 7.5000 7.3527 -1.9642 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 22 -
- 23. N-Channel Model Switching Time Characteristic Circuit Simulation result 20V 18V 16V 14V ___ VOUT/1.5 ___ VGS 12V 10V 8V 6V 4V 2V 0V -2V -4V -6V -8V 0.92us 0.96us 1.00us 1.04us 1.08us 1.12us V(2) V(3)/1.5 Time Evaluation circuit U2 RL 3 R1 L3 2 7.14 open 30nH 4.7 open open V1 = 0 V2 = 20 R2 Ropen open open TD = 1u V1 TR = 10n 4.7 VD 100MEG TF = 10n TPCP8402 15Vdc PW = 10u PER = 10m 0 0 Simulation Result ID= 2.1A, VDD=15V Measurement Simulation Error(%) VGS=0/10V ton 8.300 ns 8.2954 ns -0.055 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 23 -
- 24. N-Channel Model Output Characteristic Circuit Simulation result 5.0A 10V 4.0V 3.8V 4.5A 3.5V 4.0A 8.0V 6.0V 3.5A 3.0A 3.2 V 2.5A 2.0A 1.5A 3.0V 1.0A 0.5A VGS= 2.8V 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V I(Vsense) V_VDS Evaluation circuit U2 0Vdc V3 open open open V1 R1 open open VGS 100MEG TPCP8402 10Vdc 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 24 -
- 25. N-Channel Model BODY DIODE Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 openopen open TPCP8402 V1 Ropen 100MEG 0Vdc openopen 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 25 -
- 26. N-Channel Model Comparison Graph Circuit Simulation Result 10 Measurement Simulation Drain reverse Current - IDR (A) 1 0.1 0 0.3 0.6 0.9 1.2 1.5 Drain - Source Voltage VDS (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.1 0.7000 0.6998 -0.0286 0.2 0.7200 0.7190 -0.1389 0.5 0.7500 0.7492 -0.1067 1 0.7800 0.7793 -0.0897 2 0.8200 0.8213 0.1585 5 0.9100 0.9089 -0.1209 10 1.02 1.0204 0.0392 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 26 -
- 27. N-Channel Model Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.98us 1.00us 1.02us 1.04us 1.06us I(R1) Time Evaluation Circuit R1 50 openopen open V1 = -9.6V V1 V2 = 10.8V Ropen TD = 0 U1 TR = 10ns TPCP8402 1G TF = 5.7ns PW = 1us PER = 50us openopen 0 0 Compare Measurement vs. Simulation trj (ns) Measurement Simulation Error (%) trj (ns) 8.600 8.6033 0.038 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 27 -
- 28. N-Channel Model Reverse Recovery Characteristic Reference Trj=8.6(ns) Trb=10.2(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 28 -
- 29. N-Channel Model ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 U1 TPCP8402 0.01m open open V1 open 0Vdc Ropen open 100MEG open 0 open 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 29 -
- 30. N-Channel Model Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 - 30 -