SPICE MODEL of 2SJ511 (Professional+BDP Model) in SPICE PARK
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This document provides a device modeling report for a Power MOSFET and includes: 1) Specifications and parameters for the MOSFET SPICE model. 2) Simulation results and comparisons to measurement data for key MOSFET characteristics like transconductance, Vgs-Id, Rds(on), capacitance, switching times and more. 3) Specifications and simulation results for the body diode and ESD protection diode models.
SPICE MODEL of 2SJ511 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SJ511 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 2.0 Measurement Simulation 1.6 1.2 gfs 0.8 0.4 0.0 0.0 0.2 0.4 0.6 0.8 - ID : Drain Current A Comparison table gfs -Id(A) Error(%) Measurement Simulation 0.010 0.083 0.085 2.410 0.020 0.143 0.142 -0.699 0.050 0.250 0.248 -0.800 0.100 0.420 0.430 2.381 0.200 0.667 0.680 1.949 0.500 1.250 1.278 2.240 1.000 1.449 1.495 3.175 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result -2.0A -1.6A -1.2A -0.8A -0.4A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 V2 2SJ511 V1 -10 -3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 2.0 Measurement Simulation 1.6 - ID : Drain Current A 1.2 0.8 0.4 0.0 0.0 1.0 2.0 3.0 4.0 5.0 - VGS : Gate to Source Voltage V Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.010 1.800 1.887 4.833 0.020 1.900 1.938 2.000 0.050 2.000 2.041 2.050 0.100 2.100 2.175 3.571 0.200 2.300 2.351 2.217 0.500 2.700 2.703 0.111 1.000 3.050 3.099 1.607 2.000 3.650 3.666 0.438 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result -1.0A -0.5A 0A 0V -200mV -400mV -500mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U1 2SJ511 VGS VDS 10Vdc -10Vdc 0 Simulation Result ID=-1A, VGS=-10V Measurement Simulation Error (%) R DS (on) () 0.320 0.320 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 0 2n 4n 6n 8n 10n V(W1:4) Time*1mA Evaluation circuit ION = 0uA IOFF = 1mA W - U1 + 2SJ511 W1 D2 I2 I1 = 0 I1 Dbreak 2 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -24 0 Simulation Result VDD=-24V,ID=-2A Measurement Simulation Error (%) ,VGS=-10V Qgs(nc) 1.000 1.016 1.600 Qgd(nc) 1.200 1.219 1.583 Qg(nc) 10.000 10.028 0.280 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 110.000 109.500 -0.450 0.200 105.000 105.000 0.000 0.500 95.000 95.100 0.110 1.000 85.000 85.500 0.590 2.000 75.000 75.200 0.270 5.000 62.000 61.500 -0.810 10.000 53.000 52.800 -0.380 20.000 45.000 45.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result -20V -15V -10V -5V 0V 1.6us 1.8us 2.0us 2.2us 2.4us 2.6us V(L1:2)*1.5 V(R2:2) Time Evaluation circuit R2 L2 15 50nH R3 L1 U1 PER = 200u 2SJ511 PW = 10u 30nH V1 TF = 1n 50 -15Vdc TR = 1n R1 TD = 2u V2 = 20 V2 50 V1 = 0 0 Simulation Result ID=-1A, VDD=-15V Measurement Simulation Error(%) VGS=-10V Ton(ns) 45.000 45.245 0.544 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result -2.0A -8-6-5 -4 -10 -3.8 -3.5 -1.6A -3.3 -1.2A -3 -0.8A -2.8 V -0.4A VGS= -2.5V V 0A 0V -2V -4V -6V -8V -10V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 2SJ511 V2 -0.5 V1 -4 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc U1 2SJ511 VDS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation Drain reverse current IDR(A) 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 Drain - Source voltage VDS(V) Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.010 0.615 0.616 0.163 0.020 0.642 0.641 -0.156 0.050 0.675 0.672 -0.444 0.100 0.698 0.696 -0.287 0.200 0.725 0.724 -0.138 0.500 0.765 0.768 0.392 1.000 0.820 0.819 -0.122 2.000 0.895 0.894 -0.112 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 0.84us 0.92us 1.00us 1.08us 1.16us 1.24us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v U1 TD = 2n D2SJ511 TR = 1ns TF = 1ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj(ns) 15.200 15.188 -0.079 trb(ns) 20.800 20.866 0.317 trr(ns) 36.000 36.054 0.150 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj=15.2 (ns) Trb=20.8 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SJ511 V1 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008