SPICE MODEL of SSM6J206FE (Professional+BDP Model) in SPICE PARK
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The document provides a detailed modeling report for the SSM6J206FE power MOSFET manufactured by Toshiba, including circuit configurations and various electrical parameters such as threshold voltage, transconductance, and capacitance characteristics. It includes several simulation results comparing measured performance metrics like drain current, gate charge, and output characteristics against theoretical values. Comprehensive graphs and tables illustrate the measurements and errors associated with various device characteristics.
SPICE MODEL of SSM6J206FE (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM6J206FE MANUFACTURER: TOSHIBA REMARK: P Channel Model Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 10 9 8 7 6 gfs 5 4 3 2 Measurement Simulation 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation -0.1 1.400 1.429 2.071 -0.2 2.000 2.000 0.000 -0.5 2.750 2.778 1.018 -1 3.950 4.000 1.266 -2 5.500 5.714 3.891 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result -10A -10mA 0V -0.2V -0.6V -1.0V -1.4V -1.8V -2.2V I(VD_Sense) V_VGS Evaluation circuit VD_Sense 0Vdc U12 SSM6J206FE VDS -3Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 2 Measurement BeeTech 1.5 - ID - Drain Current - A 1 0.5 0 0.0 1.0 2.0 3.0 - VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.01 0.930 0.939 0.968 -0.02 0.950 0.958 0.842 -0.05 0.990 0.998 0.808 -0.1 1.020 1.042 2.157 -0.2 1.100 1.104 0.364 -0.5 1.200 1.229 2.417 -1 1.330 1.373 3.233 -2 1.500 1.581 5.400 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result -1.2A -0.8A -0.4A 0A 0V -50mV -100mV -150mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U12 SSM6J206FE VDS 10Vdc VGS -4Vdc 0 Simulation Result ID=-1A, VGS=-4V Measurement Simulation Error (%) R DS (on) () 0.091 0.091 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result -7.0V -6.0V -5.0V -4.0V -3.0V -2.0V -1.0V 0V 0 -1n -2n -3n -4n -5n -6n -7n -8n -9n V(W1:4) Time*-1mA Evaluation circuit ION = 0uA IOFF = 1mA W - + U12 W1 D2 I2 I1 = 0 Dbreak 2 I1 I2 = 1m TD = 0 V1 TR = 10n TF = 10n PW = 600u SSM6J206FE -15 PER = 1000u 0 Simulation Result VDD=-15V,ID=-2A Measurement Simulation Error (%) ,VGS=-5V Qgs(nc) 0.800 0.794 -0.750 Qgd(nc) 1.200 1.215 1.250 Qg(nc) 5.200 5.200 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Gate Charge Characteristic Reference Gate Charge Characteristics 7 6 - Gate Source Voltage (V) 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 Gate charge Qg (nC) All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation -0.100 60.000 61.000 1.667 -0.200 50.000 49.500 -1.000 -0.500 35.000 36.200 3.429 -1.000 27.000 27.900 3.333 -2.000 31.000 31.600 1.935 -5.000 15.000 15.300 2.000 -10.000 13.000 12.800 -1.538 -20.000 11.000 10.750 -2.273 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Switching Time Characteristic Circuit Simulation result -12V -10V -8V -6V -4V -2V 0V 1.96us 2.00us 2.04us 2.08us 2.12us 2.16us V(L1:2)*4 V(L2:1) Time Evaluation circuit L2 R2 50nH 10 SSM6J206FE RG L1 U12 PER = 2000u PW = 10u 30nH V1 TF = 1n 4.7 -10Vdc TR = 1n R1 TD = 2u V2 = 5 V2 4.7 V1 = 0 0 Simulation Result ID=-1A, VDD=-10V Measurement Simulation Error(%) VGS=0/2.5V Ton(ns) 20.000 20.108 0.540 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Output Characteristic Circuit Simulation result -5.0A -4 -10 -2.5V -4.0A -3.0A -1.8V -2.0A -1.5V -1.0A VGS=-1.2V 0A 0V -0.2V -0.4V -0.6V -0.8V -1.0V I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U12 SSM6J206FE VDS -1Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc SSM6J206FE VDS U12 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation Drain reverse current IDR(A) 1.00 0.10 0.01 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 Source-Drain voltage VSD(V) Simulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error 0.01 0.490 0.486 -0.816 0.02 0.510 0.514 0.784 0.05 0.560 0.557 -0.536 0.100 0.590 0.595 0.847 0.200 0.640 0.640 0.000 0.500 0.710 0.711 0.141 1.000 0.780 0.774 -0.769 2.000 0.840 0.844 0.476 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.94us 0.98us 1.02us 1.06us 1.10us 1.14us I(R1) Evaluation Circuit Time R1 50 V1 V1 = -9.4v U13 V2 = 10.6v TD = 10n D6J206 TR = 10ns TF = 7ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 4.300 4.369 1.605 trb(ns) 10.700 10.755 0.514 trr(ns) 15.000 15.124 0.827 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Reverse Recovery Characteristic Reference Trj=4.3(ns) Trb=10.7(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R2 100MEG SSM6J206FE U12 R1 0.01m V1 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 18. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007