SPICE MODEL of 2SJ527 (Professional+BDSP Model) in SPICE PARK
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This document summarizes the modeling and simulation of a power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) Descriptions of the MOSFET model used in the PSpice simulation software. 3) Results of simulations validating the MOSFET model against measurements, including transconductance, voltage-current characteristics, capacitances, switching times and reverse recovery characteristics of the body diode. 3) The simulations show good agreement with measurements, validating the accuracy of the MOSFET model.
SPICE MODEL of 2SJ527 (Professional+BDSP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SJ527 MANUFACTURER: HITACHI Body Diode (Special) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 5 4 3 gfs 2 1 Measurement Simulation 0 0 1 2 3 4 5 - ID - Drain Current - A Comparison table gfs -Id(A) Error(%) Measurement Simulation 0.1 0.620 0.625 0.806 0.2 0.820 0.833 1.585 0.5 1.150 1.151 0.087 1 1.700 1.715 0.882 2 2.500 2.500 0.000 5 4.000 4.098 2.450 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit V3 0Vdc V2 U9 V1 M2SJ527 10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 5 Measurement BeeTech MoDech 4 - ID - Drain Current - A 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 - VGS - Gate to Source Voltage - V Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.1 2.000 2.006 0.300 0.2 2.140 2.145 0.234 0.5 2.400 2.428 1.167 1 2.750 2.740 -0.364 2 3.200 3.200 0.000 5 4.120 4.112 -0.194 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -4.0A -3.0A -2.0A -1.0A 0A 0V -0.5V -1.0V -1.5V I(V2) V_VDS Evaluation circuit V2 0Vdc U9 VDS M2SJ527 0Vdc VGS -10Vdc 0 Simulation Result ID=-3A, VGS=-10V Measurement Simulation Error (%) R DS (on) 0.300 0.300 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 4n 8n 12n 16n 20n -V(W1:4) Time*1mA Evaluation circuit ION = 0uA IOFF = 1mA W I2 - D2 + Dbreak 5 U12 I1 = 0 W1 M2SJ527 I1 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u 50 0 Simulation Result VDD=-50V,ID=-5A Measurement Simulation Error (%) ,VGS=-10V Qgs(nC) 1.000 1.017 1.700 Qgd(nC) 2.700 2.702 0.074 Qg 7.200 7.190 -0.139 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 5 109.000 110.000 0.917 10 76.000 75.500 -0.658 15 61.000 61.400 0.656 20 50.000 50.600 1.200 25 45.000 44.230 -1.711 30 39.000 39.131 0.336 35 36.000 35.914 -0.239 40 33.500 33.274 -0.675 45 31.100 31.000 -0.322 50 30.500 30.000 -1.639 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result -13V -10V -5V 0V 1.98us 2.00us 2.02us 2.04us 2.06us 2.08us 2.10us V(2) V(3)/3 Time Evaluation circuit L2 R2 3 50nH 10 L1 2 PER = 2000u 30nH PW = 10u U10 V1 TF = 7n M2SJ527 TR = 6n 30Vdc R1 TD = 2u V2 = 10 V2 50 V1 = 0 0 Simulation Result ID=-3A, VDD=-30V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 10.000 10.020 0.200 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result -5.0A -10 -4 -6 -8 -4.0A -3.5 -3.0A -2.0A -3 -1.0A VGS=-2.5V 0A 0V -2V -4V -6V -8V -10V I(V3) V_V2 Evaluation circuit V3 0Vdc V2 U11 V1 M2SJ527 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Forward Current Characteristic Circuit Simulation Result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U7 M2SJ527 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 10.00 MoDech BeeTech Measurement Drain reverse current IDR(A) 1.00 0.10 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measurement Simulation %Error 0.1 0.700 0.698 -0.286 0.5 0.810 0.814 0.494 1 0.890 0.896 0.674 2 1.020 1.023 0.294 3 1.150 1.135 -1.304 4 1.250 1.244 -0.480 5 1.330 1.343 0.977 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 5.0A 4.0A 3.0A 2.0A 1.0A 0A -1.0A -2.0A 3.7us 3.8us 3.9us 4.0us 4.1us I(R1) Time Evaluation Circuit R1 Vsense V1 VPULSE 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(ns) 55.000 55.007 0.013 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006