SPICE MODEL of 2SJ448 (Professional+BDP Model) in SPICE PARK
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The document provides a detailed device modeling report for the power MOSFET part number 2SJ448, manufactured by NEC, including various electrical characteristics and simulation results. It includes circuit simulation data on transconductance, output characteristics, switching times, and capacitance, demonstrating measurement versus simulation performance. Key parameters such as gate-source capacitance, zero-bias threshold voltage, and reverse recovery characteristics are thoroughly analyzed.
SPICE MODEL of 2SJ448 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SJ448 MANUFACTURER: NEC Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristic Circuit Simulation Result 2 Measurement Simulation 1.8 1.6 gfs 1.4 1.2 1 0 0.5 1 1.5 2 2.5 3 - ID - Drain Current - A Comparison table Id(A) gfs Error(%) Measurement Simulation -0.100 0.400 0.385 -3.750 -0.200 0.570 0.548 -3.947 -0.500 0.900 0.900 0.000 -1.000 1.210 1.197 -1.074 -2.000 1.700 1.680 -1.176 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristic Circuit Simulation result -100A -100mA -20mA 0V -5V -10V -15V I(V3) V_V1 Evaluation circuit V3 0Vdc U16 2SJ448 V2 V1 -10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 100 Measurement BeeTech 10 - ID - Drain Current - A 1 0.1 0.01 0.0 5.0 10.0 15.0 - VGS - Gate to Source Voltage - V Simulation Result ID(A) VGS(V) Error (%) Measurement Simulation 0.020 5.000 5.035 0.696 0.050 5.200 5.172 -0.535 0.100 5.350 5.328 -0.419 0.200 5.500 5.548 0.873 0.500 5.950 5.993 0.726 1.000 6.300 6.489 3.006 2.000 6.900 7.194 4.264 5.000 8.500 8.630 1.533 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Rds(on) Characteristic Circuit Simulation result -2.0A -1.0A 0A 0V -1.0V -2.0V -3.0V I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U15 2SJ448 VDS VGS 10Vdc -10Vdc 0 Simulation Result ID=-2.0A, VGS=-10V Measurement Simulation Error (%) R DS (on) 1.500 1.500 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result -16V -12V -8V -4V 0V 0 -4n -8n -12n -16n V(W1:4) Time*-1mA Evaluation circuit ION = 0uA U14 IOFF = 1mA 2SJ448 W - + I1 = 0 W1 D2 I2 I1 I2 = 1m Dbreak 4 TD = 0 TR = 10n TF = 10n V1 PW = 600u PER = 1000u -200Vdc 0 Simulation Result VDD=-200V,ID=2.0A Measurement Simulation Error (%) ,VGS=-10V Qgs (nC) 4.000 4.069 1.73 Qgd(nC) 9.000 8.902 -1.09 Qg(nC) 15.000 15.056 0.37 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 1.000 340.000 350.000 2.941 2.000 290.000 285.000 -1.724 5.000 200.000 200.000 0.000 10.000 143.000 144.000 0.699 20.000 98.000 100.000 2.041 50.000 58.000 60.000 3.448 100.000 42.000 42.000 0.000 200.000 30.000 29.000 -3.333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.09us V(L1:2) V(L2:1)/12.5 Time Evaluation circuit L2 R2 62.5 50nH U13 L1 2SJ448 RG PER = 20u PW = 1u 30nH V1 TF = 1n 10 -125Vdc TR = 1n R1 TD = 2u V2 = 20 V2 10 V1 = 0 0 Simulation Result ID=-10A, VDD=-125V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 13.000 12.956 -0.338 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result -10A -9A -8A -7A -9.00V -6A -5A -4A -8.00V -3A -2A -1A VGS=-7.00V 0A 0V -5V -10V -15V -20V I(V3) V_V2 Evaluation circuit V3 0Vdc U15 2SJ448 V2 10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.5V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc U15 2SJ448 VDS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation 10.00 Drain reverse current IDR(A) 1.00 0.10 0.01 0.00 0.50 1.00 1.50 Source-Drain voltage VSD(V) Simulation Result IDR(A) VDS(V) VDS(V) %Error Measurement Simulation 0.030 0.620 0.619 -0.161 0.050 0.640 0.634 -0.938 0.100 0.660 0.656 -0.606 0.200 0.680 0.682 0.294 0.500 0.720 0.724 0.556 1.000 0.770 0.769 -0.130 2.000 0.830 0.829 -0.120 5.000 0.950 0.948 -0.211 10.000 1.100 1.102 0.182 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.4us 1.2us 2.0us 2.8us 3.6us I(R1) Time Evaluation Circuit R1 50 U18 D2SJ448 V1 = -9.4v V1 V2 = 10.6v TD = 150n TR = 10ns TF = 15ns PW = 1.7us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj (ns) 22.000 22.096 0.436 Trb (ns) 269.00 269.818 0.304 Trr (ns) 291.000 291.914 0.314 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=392.00(ns) Trb=112.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U31 100MEG 2SJ448 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007