SPICE MODEL of TPC8111 (Professional+BDP Model) in SPICE PARK
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The document provides a comprehensive device modeling report for the TPC8111 power MOSFET, including various simulation results and characteristics such as transconductance, drain-source resistance, gate charge, capacitance, switching time, and reverse recovery. It compares measurement and simulation data, highlighting any discrepancies in performance. Overall, it serves as a technical reference for understanding the operational parameters and characteristics of the TPC8111 MOSFET.
SPICE MODEL of TPC8111 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8111 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration Equivalent Circuit D S - - + + R3 S2 10MEG DGD R1 CGD 10M S1 + + - - S M1 G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 1000 Measurement Simulation 100 gfs 10 1 0 1 2 3 4 5 6 7 8 9 10 - ID : Drain Current A Comparison table Gfs -Id(A) Error(%) Measurement Simulation 0.100 3.370 3.333 -1.098 0.200 5.108 5.000 -2.114 0.500 7.400 7.543 1.932 1.000 11.230 11.410 1.603 2.000 18.000 18.182 1.011 5.000 25.300 25.000 -1.186 10.000 26.800 27.027 0.847 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result -40A -30A -20A -10A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 TPC8111 V2 -10 V1 -5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 40 Measurement Simulation 30 - ID : Drain Current A 20 10 0 0 1 2 3 4 5 - VGS : Gate to Source Voltage V Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.100 1.835 1.890 2.997 0.200 1.860 1.907 2.527 0.500 1.900 1.954 2.842 1.000 1.950 2.000 2.564 2.000 2.020 2.069 2.426 5.000 2.170 2.207 1.705 10.000 2.320 2.365 1.940 20.000 2.535 2.590 2.170 40.000 2.850 2.915 2.281 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result -10A -8A -6A -4A -2A 0A 0V -50mV -100mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U1 TPC8111 VDS 10Vdc VGS -10Vdc 0 Simulation Result ID=-5.5A, VGS=-10V Measurement Simulation Error (%) R DS (on) (m) 8.100 8.077 -0.284 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result -12V -10V -8V -6V -4V -2V 0V 0 20n 40n 60n 80n 100n 120n 140n V(W1:4) Time*1mA Evaluation circuit U1 ION = 0uA TPC8111 IOFF = 1mA W I2 - + D2 11 W1 Dbreak I1 = 0 I1 I2 = 1m TD = 0 V1 TR = 10n TF = 10n PW = 600u -24 PER = 1000u 0 Simulation Result VDD=-24V,ID=-11A Measurement Simulation Error (%) ,VGS=-10V Qgs(nc) 12.000 12.033 0.275 Qgd(nc) 20.000 20.000 0.000 Qg(nc) 107.000 106.992 -0.007 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 168.000 167.600 -0.238 0.200 159.000 158.780 -0.138 0.500 140.000 140.800 0.571 1.000 124.000 123.620 -0.306 2.000 105.000 105.510 0.486 5.000 83.000 83.200 0.241 10.000 69.000 68.700 -0.435 20.000 57.000 56.500 -0.877 30.000 50.000 50.200 0.400 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result -20V -18V -16V -14V -12V -10V -8V -6V -4V -2V 0V 1.7us 1.8us 1.9us 2.0us 2.1us 2.2us 2.3us 2.4us V(L1:2) V(R2:2)/1.5 Time Evaluation circuit L2 R2 5nH 2.7 U1 TPC8111 R1 L1 V1 PER = 10u PW = 2u 4.7 30nH TF = 5n -15Vdc TR = 5n R3 TD = 2u V2 = 20 V2 4.7 V1 = 0 0 Simulation Result ID=-5.5A, VDD=-15V Measurement Simulation Error(%) VGS=-10 V Ton(ns) 23.000 22.913 -0.378 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result -20A -16A -2.5V -12A -2.4V -2.3V -8A -2.2V -4A VGS=-2.1V 0A 0V -4V -8V -12V -16V -20V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TPC8111 V2 -10 V1 -2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc U1 TPC8111 VDS 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0.10 0 0.2 0.4 0.6 0.8 1 Drain : Source voltage VDS(V) Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.100 0.590 0.589 -0.169 0.200 0.610 0.612 0.328 0.500 0.645 0.643 -0.310 1.000 0.670 0.668 -0.299 2.000 0.695 0.696 0.144 5.000 0.742 0.743 0.135 10.000 0.793 0.792 -0.126 20.000 0.858 0.859 0.117 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 2.6us 2.7us 2.8us 2.9us 3.0us 3.1us 3.2us 3.3us 3.4us 3.5us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5v V1 V2 = 10.6v TD = 1.97u U1 TR = 15ns DTPC8111 TF = 15ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 22.000 22.003 0.014 trb(ns) 94.000 93.840 -0.170 trr(ns) 116.000 115.843 -0.135 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=22(ns) Trb=94(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 TPC8111 R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007