SPICE MODEL of 2SJ494 (Professional+BDP Model) in SPICE PARK
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The document is a detailed device modeling report for the power MOSFET 2SJ494, manufactured by NEC, including its electrical characteristics, simulation results, and comparisons between measurement and simulation for various parameters like transconductance, drain current, and capacitance. It provides graphs and data on gate charge, switching time, output characteristics, and reverse recovery behavior. The report is comprehensive and contains technical specifications intended for professional use in semiconductor design.
SPICE MODEL of 2SJ494 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SJ494 MANUFACTURER: NEC Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristic Circuit Simulation Result 15 13 11 9 gfs 7 5 3 Measurement Simulation 1 0 2 4 6 8 10 - ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation -0.2 1.667 1.667 0.000 -0.5 3.300 3.333 1.000 -1 5.250 5.263 0.248 -2 7.650 7.692 0.549 -5 11.350 11.364 0.123 -10 15.350 15.385 0.228 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristic Circuit Simulation result -100A -1.0A -200mA 0V -5V -10V -15V I(V3) V_V1 Evaluation circuit V3 0Vdc U13 V2 2SJ494 V1 -10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 10 Measurement Simulation - ID - Drain Current - A 1 0.1 0.0 5.0 10.0 - VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.2 -1.800 -1.833 1.833 -0.5 -1.900 -1.931 1.632 -1 -2.000 -2.044 2.200 -2 -2.200 -2.200 0.000 -5 -2.550 -2.526 -0.941 -10 -2.900 -2.911 0.379 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Rds(on) Characteristic Circuit Simulation result -10A -5A 0A 0V -100mV -200mV -300mV -400mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U13 2SJ494 VDS VGS 10Vdc -10Vdc 0 Simulation Result ID=-10A, VGS=-10V Measurement Simulation Error (%) R DS (on) 0.039 0.039 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0 -20n -40n -60n -80n V(W1:4) Time*-1mA Evaluation circuit ION = 0uA IOFF = 1mA W U13 - + 2SJ494 I1 = 0 W1 D2 I2 I1 Dbreak 20 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -48 0 Simulation Result VDD=-48V,ID=-20A Measurement Simulation Error (%) ,VGS=-10V Qgs (nC) 12.000 12.069 0.575 Qgd(nC) 16.000 16.035 0.219 Qg(nC) 74.000 74.138 0.186 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 2000 1995 -0.250 0.2 1800 1803 0.167 0.5 1500 1507 0.467 1 1250 1255 0.400 2 1000 1004 0.400 5 740 740 0.000 10 570 570 0.000 20 450 447 -0.667 50 310 308 -0.645 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result -12V -8V -4V 0V 1.815us 1.900us 2.000us 2.100us 2.200us 2.300us 2.400us V(L1:2) V(L2:1)/3 Time Evaluation circuit L2 R2 50nH 3 RG L1 U13 PER = 20u 2SJ494 PW = 1u 30nH V1 TF = 1n 10 -30Vdc TR = 1n R1 TD = 2u V2 = 20 V2 10 V1 = 0 0 Simulation Result ID=-10A, VDD=-30V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 25.000 25.067 0.268 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result -20A -4V -18A -16A -14A -3.00V -12A -10A -8A -6A -4A -2A VGS=-2.00V 0A 0V -2V -4V -6V -8V -10V -12V -14V -16V -18V -20V I(V3) V_V2 Evaluation circuit V3 0Vdc U13 V2 2SJ494 0 V1 -4 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc VDS U13 10Vdc 2SJ494 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100.000 Measurement Simulation -Drain reverse current IDR(A) 10.000 1.000 0.100 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 - Source-Drain voltage VSD(V) Simulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error -0.1 -0.625 -0.613 -1.920 -0.2 -0.640 -0.637 -0.469 -0.5 -0.670 -0.674 0.597 -1 -0.700 -0.711 1.571 -2 -0.750 -0.760 1.333 -5 -0.850 -0.851 0.118 -10 -0.950 -0.953 0.316 -20 -1.125 -1.127 0.178 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.4us 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us 2.0us 2.2us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 U14 V2 = 10.6v TD = 92n D2SJ494 TR = 10ns TF = 15ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj (ns) 22.000 22.096 0.436 Trb (ns) 269.00 269.818 0.304 Trr (ns) 291.000 291.914 0.314 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=22.000(ns) Trb=269.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U29 100MEG 2SJ494 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007