SPICE MODEL of 2SJ349 (Professional+BDP Model) in SPICE PARK
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The document details the device modeling report for a MOSFET (2SJ349) manufactured by Toshiba, including various technical parameters and simulation results. It covers characteristics such as transconductance, gate charge, capacitance, switching time, output, reverse recovery, and zener voltage. Additionally, it compares measurement data with simulation results and highlights the accuracy of the simulations with corresponding errors.
SPICE MODEL of 2SJ349 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Professional) PART NUMBER: 2SJ349 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Bee Technologies Inc. . All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameters LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 20 Measurement 18 Simulation 16 14 12 GFS(s) 10 8 6 4 2 0 0 2 4 6 8 10 DRIAN CURRENT - ID (A) Comparison table Gfs(S) Id(A) Error(%) Measurement Simulation -1.000 5.400 5.556 2.889 -2.000 8.200 8.245 0.549 -5.000 12.000 11.992 -0.067 -10.000 16.000 15.920 -0.500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -20A -16A -12A -8A -4A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U12 2SJ349 V2 V1 -10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 20 Measurement Simulation 16 Drain Current - Id (A) 12 8 4 0 0 1 2 3 4 5 Gate-Source Voltage - Vgs (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 -2.050 -2.043 -0.341 -0.500 -2.150 -2.136 -0.651 -1.000 -2.300 -2.245 -2.391 -2.000 -2.450 -2.401 -2.000 -5.000 -2.800 -2.710 -3.214 -10.000 -3.100 -3.078 -0.710 -20.000 -3.600 -3.628 0.778 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -10A -8A -6A -4A -2A 0A 0V -200mV -330mV I(V2) V_VDS Evaluation circuit V2 0Vdc U12 2SJ349 0Vdc VGS VDS -10Vdc 0 Simulation Result ID=-10A, VGS=-10V Measurement Simulation Error (%) R DS (on) 33.000 m 33.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation Result 16V 12V 8V 4V 0V 0 40n 80n 120n 160n -V(W1:4) Time*1mA Evaluation Circuit ION = 0uA IOFF = 1mA W D2 I2 - U13 I1 = 0 + 20 I1 2SJ349 Dbreak I2 = 1m W1 TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -48 0 Simulation Result VDD=-48V, ID= -20A Measurement Simulation Error (%) ,VGS=-10V Qgs 10.000 nC 10.070 nC 0.700 Qgd 31.000 nC 30.909 nC -0.294 Qg 90.000 nC 91.469 nC 1.632 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 2800.000 2750.000 -1.786 0.200 2500.000 2550.000 2.000 0.500 2200.000 2200.000 0.000 1.000 1900.000 1900.000 0.000 2.000 1500.000 1550.000 3.333 5.000 1080.000 1100.000 1.852 10.000 750.000 770.000 2.667 20.000 590.000 590.000 0.000 50.000 370.000 360.000 -2.703 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation Result -14V -12V -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.10us 2.13us V(L1:2) V(L2:1)/3 Time Evaluation Circuit L2 R2 3 50nH -30Vdc RG L1 PER = 2000u U12 V1 PW = 10u TF = 1n 30nH 2SJ349 TR = 1n 4.7 R1 TD = 2u V2 = 20 V2 4.7 V1 = 0 0 Simulation Result ID=-10A, VDD= -30V, Measurement Simulation Error(%) VGS=-10V Td(on) 35.000 ns 35.565 ns 1.614 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation Result -50A -40A -6 -8 -10 -4V -30A -20A 3.5 V VGS = -3V -10A 0A 0V -2V -4V -6V -8V -10V I(V3) V_V2 Evaluation Circuit V3 0Vdc U12 2SJ349 V2 V1 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U27 V1 0Vdc 2SJ349 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 10 1 0 0.4 0.8 1.2 1.6 2 SOURCE-DRAINE VOLTAGE VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 1.000 0.670 0.665 -0.746 2.000 0.700 0.701 0.143 5.000 0.760 0.759 -0.132 10.000 0.810 0.819 1.111 20.000 0.900 0.901 0.111 50.000 1.080 1.071 -0.833 100.000 1.280 1.286 0.469 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.4us 0.8us 1.2us 1.6us 2.0us 2.4us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 U27 V2 = 10.6v TD = 60n D2SJ349_PRO TR = 10ns TF = 23ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 72.000 ns 71.683 ns -0.440 trb 245.000 ns 245.614 ns 0.251 trr 317.000 ns 317.297 ns 0.094 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic (Body Diode) Reference Trj= (72ns) Trb= (245ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 20V 40V 60V 80V 100V I(R1) V_V1 Evaluation Circuit R1 0.01m U22 V1 0Vdc 2SJ349 I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006