SPICE MODEL of 2SK3670 (Standard+BDS Model) in SPICE PARK
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This document summarizes the modeling and simulation of a power MOSFET and its internal body diode and ESD protection diode. It includes: 1) MOSFET model parameters and simulations of its transconductance, Vgs-Id, Rds(on), gate charge, and capacitance characteristics. 2) Body diode simulations of its forward current, reverse recovery, and I-V characteristics. 3) ESD protection diode simulations of its zener voltage characteristic. 4) Comparisons of measurement and simulation results with low error percentages.
SPICE MODEL of 2SK3670 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model parameter) PART NUMBER: 2SK3670 MANUFACTURER: TOSHIBA Body Diode (Model parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 2 1.6 1.2 gfs 0.8 0.4 Measurement Simulation 0 0.050 0.150 0.250 0.350 0.450 ID(A) Comparison table gfs Id(A) Error(%) Measurement Simulation 0.050 0.821 0.833 1.462 0.100 1.100 1.111 1.000 0.200 1.545 1.538 -0.453 0.500 1.950 1.923 -1.385 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.6A 1.2A 0.8A 0.4A 0A 0V 1.0V 2.0V 3.0V I(V3) V_V2 Evaluation circuit V3 0Vdc 2SK3670 V1 V2 0Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result Measurement Simulation 0.9 0.7 ID - Drain Current - A 0.5 0.3 0.1 0 1 2 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.100 1.350 1.356 0.444 0.200 1.480 1.452 -1.892 0.500 1.650 1.646 -0.242 1.000 1.850 1.865 0.811 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 600mA 400mA 200mA 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(V3) V_VDS Evaluation circuit V3 U20 0Vdc 0Vdc VDS VGS 2SK3670 4Vdc 0 Simulation Result ID=0.5A, VGS=4V Measurement Simulation Error (%) R DS (on) 1.000 0.998 0.200 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 10V 8V 6V 4V 2V 0V 0 2.0n 4.0n 6.0n 8.0n V(W1:3) Time*1mS Evaluation circuit V2 U20 0Vdc Dbreak PER = 1000u W1 PW = 600u + D1 TF = 10n 2SK3670 TR = 10n - I2 TD = 0 W 1Adc I2 = 1m IOFF = 100uA I1 ION = 0uA I1 = 0 V1 120Vdc 0 Simulation Result VDD=120V,ID=1A Measurement Simulation Error (%) ,VGS=5V Qgs 1.000 nC 1.008 nC 0.800 Qgd 1.700 nC 1.709 nC 0.529 Qg 4.600 nC 4.300 nC -6.522 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1.000 85.000 85.213 0.250 2.000 70.000 70.700 1.000 5.000 51.000 51.200 0.392 10.000 36.000 36.158 0.438 20.000 25.000 24.716 1.136 50.000 13.500 13.600 0.740 100.000 8.000 8.195 2.437 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 2.000us 2.050us 2.100us 2.150us 2.200us V(L1:2)*2 V(L2:2)/7.5 Time Evaluation circuit L2 RL 50nH 150 U20 R1 L1 30nH V1 = 0 V2 = 10 V2 50 V1 TD = 2u R2 2SK3670 75Vdc TR = 10n TF = 10n 50 PW = 10u PER = 200u 0 Simulation Result ID=0.5 A, VDD=75V Measurement Simulation Error(%) VGS=0/10V ton 40.000 ns 40.645 ns 1.613 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 2.0A 4 2.5 1.6A 3 2 1.2A 1.75 0.8A 0.4A VGS=1.5V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit U20 Vdsense 0Vdc 10Vdc 2SK3670 Vv ariable Vstep 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. BODY DIODE Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 0V 0.4V 0.8V 1.2V I(R1) V_V1 Evaluation Circuit R1 2SK3670 0.01m V1 0Vdc U21 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 1 Measurement Simulation Drain reverse current IDR(A) 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result VSD(V) Ifwd(A) Measuremen Simulation %Error 0.001 0.490 0.489 -0.204 0.002 0.510 0.511 0.196 0.005 0.542 0.542 0.000 0.01 0.566 0.567 0.177 0.02 0.598 0.594 -0.669 0.05 0.640 0.639 -0.156 0.1 0.678 0.678 0.000 0.2 0.718 0.720 0.279 0.5 0.778 0.777 -0.129 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.4us 1.5us 1.6us I(R1) Time Evaluation Circuit R1 50 D2SK3670 V1 = -9.4v V1 V2 = 10.6v TD = 5n TR = 10ns TF = 10ns PW = 1us U13 PER = 100us 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trj+Trb (ns) 159.000 159.464 0.292 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=76(ns) Trb=83(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U21 R1 R2 0.01m 2SK3670 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006