SPICE MODEL of 2SJ654 (Professional+BDP Model) in SPICE PARK
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The document is a device modeling report for the power MOSFET part number 2SJ654, produced by Sanyo, detailing its key characteristics and simulation results. It includes transconductance, output, gate charge, capacitance, switching time, and reverse recovery characteristics along with measurement and simulation error data. Comprehensive evaluation and comparison figures are provided for various parameters to illustrate the performance of the MOSFET in circuit simulations.
SPICE MODEL of 2SJ654 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: 2SJ654 MANUFACTURER: SANYO Body Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement Simulation 8 6 gfs(S) 4 2 0 0.0 2.0 4.0 6.0 8.0 10.0 Drain Current ID (-A) Comparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1.0000 3.100 3.200 3.21 2.0000 4.350 4.467 2.70 5.0000 6.750 6.882 1.96 10.0000 9.400 9.465 0.69 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
- 4. Vgs-Id Characteristic Circuit Simulation result -16A -14A -12A -10A -8A -6A -4A -2A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V I(V3) V_V1 Evaluation circuit V3 0Vdc V2 U1 2SJ654 -10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
- 5. Comparison Graph Circuit Simulation Result Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 1 2.650 2.596 -2.04 2 2.900 2.857 -1.50 5 3.400 3.384 -0.48 10 4.000 3.994 -0.15 12 4.200 4.197 -0.08 14 4.400 4.385 -0.35 16 4.600 4.561 -0.85 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
- 6. Rds(on) Characteristic Circuit Simulation result -4.0A -3.5A -3.0A -2.5A -2.0A -1.5A -1.0A -0.5A 0A 0V -0.2V -0.4V -0.6V -0.8V -1.0V I(V3) V_VDS Evaluation circuit V3 0Vdc VDS U1 2SJ654 0Vdc V1 -10 0 Simulation Result ID=-4A, VGS=-10V Measurement Simulation Error (%) R DS (on) mΩ 240.000 240.000 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
- 7. Gate Charge Characteristic Circuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 5n 10n 15n 20n V(W1:4) Time*1mA Evaluation circuit U1 ION = 0uA 2SJ654 I2 I1 = 0 IOFF = 1mA D2 8 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -50 0 Simulation Result VDD=-50V,ID=-8A Measurement Simulation Error (%) ,VGS=-10V Qgs nC 3.800 3.772 -0.74 Qgd nC 4.500 4.509 0.20 Qg nC 20.000 19.977 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0 110.000 110.000 0.000 5 30.000 29.735 -0.883 10 18.500 18.478 -0.119 15 13.500 13.723 1.652 20 11.000 11.047 0.427 25 9.500 9.312 -1.979 30 8.000 8.087 1.088 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
- 9. Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us V(U1:G) V(U1:D)/5 Time Evaluation circuit L2 RL 50nH 12.5 R1 L1 U1 PER = 20u 2SJ654 VDD PW = 10u 30nH -51Vdc TF = 5n 50 R2 TR = 5n 50 TD = 1u V2 = 20 V2 V1 = 0 0 Simulation Result ID=-4A, VDD=-50V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 12.000 11.992 -0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
- 10. Output Characteristic Circuit Simulation result -20A -18A -10, -8 -6 -16A -14A -12A -10A -4 -8A -6A -4A VGS=-3V -2A 0A 0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -10V I(V3) V_V2 Evaluation circuit V3 0Vdc V2 U1 2SJ654 -10 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(Vsense) V_VDS Evaluation Circuit Vsense 0Vdc VDS U1 2SJ654 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
- 12. Comparison Graph Circuit Simulation Result Measurement Simulation 10.00 Drain reverse current IDR (-A) 1.00 0.10 0.01 0 0.3 0.6 0.9 1.2 1.5 Source - Drain voltage VSD (-V) Simulation Result VSD(-V) IDR(-A) %Error Measurement Simulation 0.01 0.6050 0.6036 -0.24 0.02 0.6250 0.6246 -0.07 0.05 0.6500 0.6526 0.40 0.1 0.6750 0.6743 -0.11 0.2 0.6950 0.6968 0.25 0.5 0.7300 0.7292 -0.11 1 0.7600 0.7581 -0.24 2 0.7950 0.7945 -0.06 5 0.8600 0.8626 0.30 10 0.9400 0.9380 -0.22 20 1.0500 1.0505 0.05 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v U1 TD = 40ns D2SJ654_P TR = 10ns TF = 10ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 26.000 26.125 0.48 trb ns 28.000 28.006 0.02 trr ns 54.000 54.131 0.24 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
- 14. Reverse Recovery Characteristic Reference Measurement Trj=26.00(ns) Trb=28.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1 Evaluation Circuit R1 0.001m V1 U1 2SJ654 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16