SPICE MODEL of 2SJ334 (Professional+BDP Model) in SPICE PARK
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The document provides a comprehensive report on the modeling and simulation of a MOSFET device (part number 2SJ334, manufactured by Toshiba). It includes detailed parameters, circuit simulation results, and comparisons between measurements and simulations for transconductance, gate charge, capacitance, switching time, and reverse recovery characteristics. Overall, the report evaluates device performance metrics and characteristics while highlighting any discrepancies between measurement and simulation results.
SPICE MODEL of 2SJ334 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Professional) PART NUMBER: 2SJ334 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Bee Technologies Inc. . All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PARAMETERS PSpice model Model description parameters LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 28 Measurement Simulation 24 20 16 GFS(s) 12 8 4 0 0 5 10 15 20 25 DRIAN CURRENT - ID (A) Comparison table Gfs(S) Id(A) Error(%) Measurement Simulation -1.000 4.100 4.230 3.171 -2.000 7.900 8.070 2.152 -5.000 12.500 12.729 1.832 -10.000 18.000 17.690 -1.722 -20.000 24.000 23.161 -3.496 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -20A -16A -12A -8A -4A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U10 2SJ334 V2 V1 -10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 20 Measurement Simulation 16 Drain Current - Id (A) 12 8 4 0 0 1 2 3 4 5 Gate-Source Voltage - Vgs (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 -2.000 -2.057 2.850 -0.500 -2.120 -2.144 1.132 -1.000 -2.300 -2.241 -2.565 -2.000 -2.400 -2.377 -0.958 -5.000 -2.600 -2.656 2.154 -10.000 -3.000 -2.988 -0.400 -20.000 -3.490 -3.486 -0.115 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -14A -12A -10A -8A -6A -4A -2A 0A 0V -100mV -200mV -300mV -400mV I(V2) V_VDS Evaluation circuit V2 0Vdc U10 2SJ334 0Vdc VGS VDS -10Vdc 0 Simulation Result ID=-15A, VGS=-10V Measurement Simulation Error (%) R DS (on) 29.000 m 29.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation Result 16V 12V 8V 4V 0V 0 40n 80n 120n 160n 200n -V(W1:4) Time*1mA Evaluation Circuit ION = 0uA IOFF = 1mA W D2 I2 - I1 = 0 + 30 I1 Dbreak I2 = 1m W1 U10 TD = 0 2SJ334 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -48 0 Simulation Result VDD=-48V, ID= -30A Measurement Simulation Error (%) ,VGS=-10V Qgs 13.000 nC 12.456 nC -4.185 Qgd 38.000 nC 37.895 nC -0.276 Qg 107.000 nC 107.018 nC 0.017 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 3600.000 3500.000 -2.778 0.200 3200.000 3250.000 1.563 0.500 2700.000 2750.000 1.852 1.000 2300.000 2300.000 0.000 2.000 1900.000 1850.000 -2.632 5.000 1350.000 1300.000 -3.704 10.000 1000.000 1000.000 0.000 20.000 750.000 740.000 -1.333 50.000 480.000 500.000 4.167 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation Result -14V -12V -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.10us 2.13us V(L1:2) V(L2:1)/3 Time Evaluation Circuit L2 R2 2 50nH -30Vdc RG L1 U10 V1 PER = 2000u PW = 10u 30nH 2SJ334 TF = 1n 4.7 TR = 1n R1 TD = 2u V2 = 20 V2 4.7 V1 = 0 0 Simulation Result ID=-15A, VDD= -30V, Measurement Simulation Error(%) VGS=-10V Td(on) 25.000 ns 25.146 ns 0.584 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation Result -50A -6 -8 -40A -10 -4V -30A 3.5 V -20A VGS = -3V -10A 0A 0V -2V -4V -6V -8V -10V I(V3) V_V2 Evaluation Circuit V3 0Vdc U10 2SJ334 V2 V1 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U25 2SJ334 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation DRAIN REVERSE CURRENT IDR (A) 10 1 0 0.4 0.8 1.2 1.6 2 SOURCE-DRAINE VOLTAGE VSD (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 1.000 0.680 0.658 -3.235 2.000 0.700 0.692 -1.143 5.000 0.740 0.749 1.216 10.000 0.800 0.810 1.250 20.000 0.900 0.896 -0.444 50.000 1.080 1.070 -0.926 100.000 1.300 1.304 0.308 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.4us 0.8us 1.2us 1.6us 2.0us 2.4us I(R1) Time Evaluation Circuit R1 50 U25 V1 = -9.4v V1 V2 = 10.6v TD = 22n TR = 10ns TF = 23ns PW = 1us PER = 100us D2SJ334_PRO 0 R1 Compare Measurement vs. Simulation 50 U25 Measurement V1 V1 = -9.4v V2 = 10.6v Simulation Error (%) TD = 22n TR = 10ns trj TF = 23ns 60.000 ns 59.572 ns -0.713 PW = 1us trb PER = 100us 300.000 ns D2SJ334_PRO 294.737 ns -1.754 trr 360.000 ns 354.309 ns -1.581 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic (Body Diode) Reference Trj= (60ns) Trb= (300ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U20 0Vdc 2SJ334 I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006