SPICE MODEL of TPC8110 (Professional+BDP Model) in SPICE PARK
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The document provides a comprehensive device modeling report for the TPC8110 power MOSFET manufactured by Toshiba. It includes detailed specifications, circuit simulation results for various characteristics such as transconductance, gate charge, and capacitance, as well as measurement errors when comparing simulation data with real measurements. The report also covers reverse recovery characteristics and zener voltage behavior, highlighting the performance metrics essential for application evaluation.
SPICE MODEL of TPC8110 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8110 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 50 45 40 35 30 gfs 25 20 15 10 5 Measurement Simulation 0 0 5 10 15 20 - ID(A) Comparison table gfs - Id(A) Error(%) Measurement Simulation 0.1 2.000 2.000 0.000 0.2 3.300 3.333 1.000 0.5 6.200 6.250 0.806 1 7.700 7.692 -0.104 2 11.00 11.111 1.009 5 15.500 15.625 0.806 10 22.000 22.222 1.009 20 31.500 31.746 0.781 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result -40A -30A -20A -10A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit U9 V3 0Vdc V1 TPC8110 V2 0 10 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 20 Measurement Simulation 16 - ID - Drain Current - A 12 8 4 0 0 1 2 3 4 5 6 - VGS - Gate to Source Voltage - V Simulation Result - VGS(V) - ID(A) Error (%) Measurement Simulation 0.1 1.700 1.696 -0.235 0.2 1.720 1.727 0.407 0.5 1.800 1.807 0.389 1 1.900 1.892 -0.421 2 2.000 2.009 0.450 5 2.250 2.244 -0.267 10 2.500 2.512 0.480 20 2.900 2.895 -0.172 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result -6.0A -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -50mV -100mV -150mV -200mV I(V2) V_VDS Evaluation circuit U9 V2 0Vdc 0Vdc VGS TPC8110 VDS -10Vdc 0 Simulation Result ID=-4A, VGS=-10V Measurement Simulation Error (%) R DS (on) 17.000 m 17.107 m 0.629 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 40V 30V 20V 10V 0V 0 20n 40n 60n 80n -V(W1:4) Time*1mA Evaluation circuit U9 ION = 0uA IOFF = 1mA W D2 I2 - I1 = 0 + 8 I1 Dbreak I2 = 1m W1 TPC8110 TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -32 0 Simulation Result VDD=-32V,ID=-8A Measurement Simulation Error (%) ,VGS=-10V Qgs(nC) 5.500 5.546 0.836 Qgd(nC) 12.000 12.000 0.000 Qg 48.000 48.207 0.431 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) - VDS(V) Error(%) Measurement Simulation 0.1 250.000 250.000 0.000 0.2 227.000 230.000 1.322 0.5 188.000 190.000 1.064 1 163.000 160.000 -1.840 2 118.000 120.000 1.695 5 77.000 80.000 3.896 10 60.000 60.000 0.000 20 45.000 45.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 1.98us 2.00us 2.05us 2.10us 2.13us V(L1:2) V(L2:1)/2 Time Evaluation circuit U9 L2 R2 5 50nH -20Vdc RG L1 PER = 2000u V1 PW = 10u TF = 1n 30nH TR = 1n 4.7 TPC8110 R1 TD = 2u V2 = 20 V2 4.7 V1 = 0 0 Simulation Result ID=-4 A, VDD=-20V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 15.000 14.846 -1.027 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result -40A -10 -4 6 -5 2.3 -30A -6 - 3.25 -3.0 -20A -2.75 -10A -2.5 VGS=-2.25 V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit U9 V3 0Vdc V1 TPC8110 V2 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U24 TPC8110 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain reverse current IDR(A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.620 0.616 -0.65 0.2 0.635 0.636 0.16 0.5 0.660 0.665 0.76 1 0.690 0.693 0.43 2 0.720 0.727 0.97 5 0.780 0.782 0.26 10 0.830 0.832 0.24 20 0.900 0.900 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v TD = 30n U24 TR = 10ns TF = 23ns D8110 PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 19.000 19.056 0.295 Trb(ns) 96.000 96.008 0.008 Trr(ns) 115.000 115.064 0.056 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=19(ns) Trb=96(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U24 R1 TPC8110 R2 0.01m 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006