SPICE MODEL of 2SJ495 (Professional+BDP Model) in SPICE PARK
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The document provides a detailed device modeling report for the power MOSFET part number 2SJ495 from NEC, including essential parameters and simulation results for various characteristics such as transconductance, gate charge, and output characteristics. It includes tables comparing measured and simulated values, with errors listed for accuracy assessment. The report is published by Bee Technologies Inc. in 2007 and covers multiple circuit simulations to evaluate performance metrics.
SPICE MODEL of 2SJ495 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SJ495 MANUFACTURER: NEC Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristic Circuit Simulation Result 30 25 20 gfs 15 10 5 Measurement Simulation 0 0 4 8 12 16 20 - ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation -0.2 3.330 3.333 0.090 -0.5 5.550 5.556 0.108 -1 7.500 7.692 2.560 -2 10.500 10.526 0.248 -5 15.550 15.625 0.482 -10 20.200 20.408 1.030 -20 25.400 25.641 0.949 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristic Circuit Simulation result -100A -1.0A -200mA 0V -2.0V -4.0V -6.0V -8.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U14 V2 2SJ495 V1 -10 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation 10 - ID - Drain Current - A 1 0.1 0.0 2.0 4.0 6.0 8.0 - VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.2 -1.800 -1.793 -0.389 -0.5 -1.900 -1.861 -2.053 -1 -2.000 -1.939 -3.050 -2 -2.150 -2.049 -4.698 -5 -2.400 -2.283 -4.875 -10 -2.650 -2.564 -3.245 -20 -3.000 -2.993 -0.233 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Rds(on) Characteristic Circuit Simulation result -15A -10A -5A 0A 0V -100mV -200mV -300mV -400mV I(VD_Sense) V_VDS Evaluation circuit VD_Sense 0Vdc U14 2SJ495 VDS VGS 10Vdc -10Vdc 0 Simulation Result ID=-15A, VGS=-10V Measurement Simulation Error (%) R DS (on) 0.024 0.024 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 0 -40n -80n -120n -160n V(W1:4) Time*-1mA Evaluation circuit ION = 0uA IOFF = 1mA W U14 - + 2SJ495 I1 = 0 W1 D2 I2 I1 Dbreak 30 I2 = 1m TD = 0 TR = 10n V1 TF = 10n PW = 600u PER = 1000u -48 0 Simulation Result VDD=-48V,ID=-30A Measurement Simulation Error (%) ,VGS=-10V Qgs (nC) 12.000 12.069 0.575 Qgd(nC) 46.000 46.079 0.172 Qg(nC) 140.000 141.111 0.794 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 3200 3210 0.313 0.2 3100 3115 0.484 0.5 2900 2900 0.000 1 2600 2600 0.000 2 2150 2155 0.233 5 1600 1600 0.000 10 1200 1200 0.000 20 850 847 -0.353 50 550 550 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result -12V -8V -4V 0V 1.815us 1.900us 2.000us 2.100us 2.200us 2.300us 2.400us V(L1:2) V(L2:1)/3 Time Evaluation circuit L2 R2 50nH 2 RG L1 U14 PER = 20u 2SJ495 PW = 1u 30nH V1 TF = 1n 10 -30Vdc TR = 1n R1 TD = 2u V2 = 20 V2 10 V1 = 0 0 Simulation Result ID=-15A, VDD=-30V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 40.000 39.653 -0.868 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result -20A -18A -3.00V -16A -14A -12A -2.50V -10A -8A -6A -4A VGS=-2.00V -2A 0A 0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -10V I(V3) V_V2 Evaluation circuit V3 0Vdc U14 V2 2SJ495 0 V1 -4 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V I(VD_Sense) V_VDS Evaluation Circuit VD_Sense 0Vdc VDS U14 10Vdc 2SJ495 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100.000 Measurement Simulation -Drain reverse current IDR(A) 10.000 1.000 0.100 0.00 1.00 2.00 3.00 - Source-Drain voltage VSD(V) Simulation Result VDS(V) VDS(V) IDR(A) Measurement Simulation %Error -0.5 -0.590 -0.585 -0.847 -1 -0.620 -0.630 1.613 -2 -0.690 -0.690 0.000 -5 -0.800 -0.792 -1.000 -10 -0.900 -0.901 0.111 -20 -1.080 -1.079 -0.093 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.4us 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us 2.0us 2.2us I(R1) Time Evaluation Circuit R1 50 U16 V1 = -9.4v V1 V2 = 10.6v D2SJ495 TD = 1n TR = 10ns TF = 15ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj (ns) 29.000 29.360 1.241 Trb (ns) 353.000 353.478 0.135 Trr (ns) 382.000 382.838 0.219 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=29.000(ns) Trb=353.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U30 100MEG 2SJ495 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007