SPICE MODEL of TPC8107 (Professional+BDP Model) in SPICE PARK
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This document provides a device modeling report for a Toshiba TPC8107 power MOSFET. It includes: 1. Details of the MOSFET components and manufacturer. 2. Equivalent circuit diagrams and descriptions of the MOSFET model parameters. 3. Simulation results graphs comparing measurements and simulations of key MOSFET characteristics like transconductance, drain current, gate charge, switching times and more. 4. Evaluation circuits and simulation settings used to generate the results. 5. Tables comparing measurement and simulation data with percent error calculations. The report demonstrates accurate modeling of the MOSFET's electrical behavior through PSpice simulation versus real-world measurements
SPICE MODEL of TPC8107 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8107 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration Equivalent Circuit D S1 - - + + S S2 R2 DGD + - S + 10MEG - CGD R1 10M G Q1 S All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 40.00 Measurement Simulation 30.00 GFS (s) 20.00 10.00 0.00 0.00 2.00 4.00 6.00 8.00 10.00 DRAIN CURRENT - ID (A) Comparison table gfs - Id(A) Error(%) Measurement Simulation 0.500 8.500 8.505 0.059 1.000 12.000 12.149 1.242 2.000 17.000 17.157 0.924 5.000 27.000 26.901 -0.367 10.000 38.000 37.524 -1.253 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result -50A -40A -30A -20A -10A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V1 Evaluation circuit U4 V3 0Vdc V2 V1 TPC8107 -10Vdc 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 50 Measurement Simulation 40 Drain Current - Id (mA) 30 20 10 0 0 1 2 3 4 5 Gate-Source Voltage - Vgs (V) Simulation Result - VGS(V) - ID(A) Error (%) Measurement Simulation 1.000 1.750 1.754 0.251 2.000 1.840 1.825 -0.837 5.000 1.950 1.964 0.708 10.000 2.100 2.123 1.095 20.000 2.300 2.350 2.187 50.000 2.750 2.812 2.251 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result -7.0A -6.0A -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -10mV -20mV -30mV -40mV I(V2) V_VDS Evaluation circuit U7 V2 0Vdc VDS 0Vdc VGS TPC8107 -10Vdc 0 Simulation Result ID=-6.5A, VGS=-10V Measurement Simulation Error (%) R DS (on) (m) 5.500 5.366 -2.436 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 30V 20V 10V 0V 0 40n 80n 120n 160n 200n -V(W1:4) Time*1mA Evaluation circuit U13 ION = 0uA IOFF = 1mA W D2 I2 - Dbreak + 13 TR = 10n W1 TPC8107 TD = 0 TF = 10n PW = 600u -24 PER = 1000u I1 = 0 V1 I2 = 1m 0 Simulation Result VDD=-24V,ID=-13A Measurement Simulation Error (%) ,VGS=-10V Qgs(nC) 12.000 11.552 -3.733 Qgd(nC) 29.000 29.138 0.476 Qg(nC) 130.000 130.345 0.265 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) - VDS(V) Error(%) Measurement Simulation 0.100 500.000 500.000 0.000 0.200 460.000 465.000 1.087 0.500 380.000 382.000 0.526 1.000 310.000 295.000 -4.839 2.000 232.000 230.000 -0.862 5.000 150.000 145.000 -3.333 10.000 110.000 115.000 4.545 20.000 80.000 82.000 2.500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result -12V -10V -8V -6V -4V -2V 0V 2V 0.92us 0.96us 1.00us 1.04us 1.08us 1.12us V(3)/1.5 V(L3:1) Time Evaluation circuit U2 3 R1 L3 2 30nH 4.7 RL V1 = 0 TPC8107 V2 = -20 R2 2.3 TD = 1u V1 TR = 10n 4.7 TF = 10n PW = 10u VD PER = 10m -15Vdc 0 Simulation Result ID=-6.5 A, VDD=-15V Measurement Simulation Error(%) VGS=0/-10V Ton(ns) 22.000 22.515 2.341 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result -50A -4 -3 -2.8 -10 -40A -6 -8 -2.6 -30A -2.4 -20A -2.2 -10A VGS=-2 V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit U13 V3 0Vdc V1 TPC8107 V2 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U6 TPC8107 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain Reverse Current IDR (mA) 10 1 0.00 0.50 1.00 1.50 2.00 Source-Drain Voltage VDS (V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.100 0.560 0.555 -0.893 0.200 0.585 0.583 -0.342 0.500 0.610 0.620 1.639 1.000 0.650 0.648 -0.308 2.000 0.680 0.679 -0.147 5.000 0.720 0.724 0.556 10.000 0.780 0.768 -1.538 20.000 0.820 0.827 0.854 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 300mA 200mA 0A -200mA -300mA 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us I(RL21) Time Evaluation Circuit RL21 N07543 50 V1 = -9.40 U12 V2 = 10.60 TD = 0.09u TF = 10n V21 TR = 10n PW = 1u PER = 2u D8107 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 24.000 23.564 -1.817 Trb(ns) 178.000 175.928 -1.164 Trr(ns) 202.000 199.492 -1.242 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=24(ns) Trb=178(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m openopenopenopen open U1 TPC8107 V1 Ropen 100MEG 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007