SPICE MODEL of TPC8027 (Professional+BDP Model) in SPICE PARK
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The document provides a comprehensive report on the modeling of a power MOSFET (part number TPC8027) manufactured by Toshiba, including detailed circuit configurations, simulation results, and characteristic parameters. It outlines various metrics such as transconductance, gate charge, capacitance characteristics, and reverse recovery characteristics, with comparisons between measurement and simulation outcomes. The report includes graphical and tabulated data demonstrating the device's performance under varying conditions.
SPICE MODEL of TPC8027 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: TPC8027 MANUFACTURER: TOSHIBA Body Diode : Professional Model Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration 8 7 6 5 1 2 3 4 Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result 50 Measurement Simulation Transconductance GFS(s) 40 30 20 10 0 2 4 6 8 10 Drain Current ID (A) Comparison table gfs Id(A) Error(%) Measurement Simulation 1.000 14.065 14.706 4.55 2.000 20.500 21.053 2.70 5.000 32.700 32.895 0.60 10.000 46.120 45.444 -1.46 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result 50A 40A 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(V3) V_VGS Evaluation circuit V3 0Vdc U6 TPC8027_PRO VGS V1 0Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result 20 Measurement 18 Simulation 16 14 Drain Current ID (A) 12 10 8 6 4 2 0 2 3 4 Gate - Source Voltage VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.820 2.894 2.61 2.000 2.920 2.953 1.12 5.000 3.070 3.071 0.01 10.000 3.220 3.205 -0.46 20.000 3.360 3.398 1.12 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result 9.0A 8.0A 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 10.0mV 20.0mV 24.3mV I(V3) V_VDS Evaluation circuit 0Vdc V3 VDS VGS 10Vdc U1 TPC8027_PRO 10Vdc 0 Simulation Result ID = 9A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 2.100 2.100 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0 20n 40n 60n 80n 100n 120n 140n 160n V(W1:3) Time*1mA Evaluation circuit Vsense I1 W1 D1 + Dbreak 18Adc I2 - TD = 0 W U1 TPC8027_PRO I2 = 1m ION = 0A IOFF = 1mA VD 24Vdc 0 Simulation Result VDD=24V, ID=18A, Measurement Simulation Error (%) VGS=10V Qgs nC 13.00 12.98 -0.15 Qgd nC 42.00 42.01 0.02 Qg nC 113.00 112.87 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error(%) Measurement Simulation 0.100 1600.00 1600.10 -0.01 0.200 1450.00 1400.18 -3.44 0.500 1200.00 1200.20 0.02 1.000 970.00 970.10 0.01 2.000 750.00 750.22 0.03 5.000 500.00 498.00 -0.40 10.000 370.00 374.00 1.08 20.000 260.00 255.30 -1.81 50.000 180.00 177.00 -1.67 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V -4V -8V 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us V(L3:1)*1 V(L2:2)/1.5 Time Evaluation circuit R2 L3 U2 Vsense RL 2 1.67 4.7 V1 = 0 V2 = 20 TD = 1u V1 R1 TR = 10n TF = 10n 4.7 VDD PER = 10m TPC8027_PRO 15Vdc PW = 10u 0 Simulation Result ID=9 A, VDD=15V Measurement Simulation Error(%) VGS=0/10V ton ns 44.00 44.08 0.18 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result 50A 10 8 4.5 4 3.8 40A 30A 3.6 3.5 20A 3.4 10A 3.2 VGS=3 V 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(V3) V_VDS Evaluation circuit V3 0Vdc VGS U1 TPC8027_PRO 10Vdc VDS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 TPC8027 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 1000 Measurement Simulatio Drain reverse Current - IDR (A) 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1 Drain - Source Voltage VDS (V) Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.100 0.620 0.617 -0.49 0.200 0.630 0.629 -0.09 0.500 0.645 0.646 0.21 1.000 0.660 0.662 0.26 2.000 0.680 0.680 0.04 5.000 0.710 0.711 0.13 10.000 0.740 0.740 -0.05 20.000 0.778 0.776 -0.31 50.000 0.845 0.846 0.17 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.7us 19.9us 20.1us 20.3us 20.5us 20.7us I(R1) Time Evaluation Circuit R1 50 V1 = -9.35V V1 U1 V2 = 10.65V DTPC8027_PRO TD = 0 TR = 10ns TF = 10ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 35.00 34.98 -0.06 trb ns 157.00 156.15 -0.54 trr ns 192.00 191.13 -0.45 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Measurement Trj=35(ns) Trb=157 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007