SPICE MODEL of 2SJ493 (Professional+BDP Model) in SPICE PARK
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The document provides a comprehensive device modeling report for the power MOSFET part number 2SJ493 manufactured by NEC, including various parameters and simulation results. It details characteristics such as transconductance, gate charge, capacitance, switching time, output characteristics, and ESD protection diode behavior. The results include measured values compared to simulations, showing accuracy and performance details essential for circuit design applications.
SPICE MODEL of 2SJ493 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model) PART NUMBER: 2SJ493 MANUFACTURER: NEC REMARK: P Channel Model Body Diode (Professional Model ) / ESD Protection Diode COMPONENTS: Power MOSFET (Model parameters) PART NUMBER: 2SJ493 MANUFACTURER: NEC REMARK: P Channel Model Body Diode (Model parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristic Circuit Simulation Result Measurement Simulation 10.1 TRANSCONDUCTANCE GFS(s) 8.1 6.1 4.1 2.1 0.1 0 2 4 6 8 10 - DRIAN CURRENT ID (A) Comparison table gfs Id(A) Error(%) Measurement Simulation 0.1 1.200 1.190 -0.794 0.2 1.681 1.689 0.484 0.5 2.632 2.650 0.700 1 3.676 3.689 0.335 2 5.210 5.128 -1.570 5 7.900 7.862 -0.486 10 10.922 10.753 -1.550 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristic Circuit Simulation result -100A -100mA 0V -5V -10V I(V3) V_VGS Evaluation circuit V3 0Vdc U1 2SJ493 VDS -10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation - Drain Current ID (A) 10 1 0.1 0 1.25 2.5 3.75 5 - Gate - Source Voltage VGS (V) Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.1 1.720 1.724 0.221 -0.2 1.800 1.795 -0.272 -0.5 1.950 1.938 -0.641 -1 2.100 2.100 -0.019 -2 2.300 2.332 1.387 -5 2.800 2.803 0.114 -10 3.400 3.351 -1.447 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Rds(on) Characteristic Circuit Simulation result -8.0A -6.4A -4.8A -3.2A -1.6A 0A 0V -112mV -224mV -336mV -448mV -560mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 2SJ493 VDS -10Vdc VGS -10Vdc 0 Simulation Result ID=-8A, VGS=-10V Measurement Simulation Error (%) R DS (on) m 70.00 70.00 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result -16V -14V -12V -10V -8V -6V -4V -2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:1) Time*1mA Evaluation circuit Vsense U1 I1 2SJ493_PRO D1 Dbreak -16Adc W I2 - + TD = 0 W1 VD ION = 0A -48Vdc IOFF = 1mA 0 Simulation Result VDD=-48V,ID=-16A ,VGS=-10V Measurement Simulation Error (%) Qgs nc 8.00 8.04 0.50 Qgd nc 10.00 10.08 0.80 Qg nc 42.00 41.96 -0.10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation -1 750.00 749.24 -0.10 -2 620.00 621.55 0.25 -5 460.00 455.88 -0.90 -10 360.00 358.54 -0.41 -20 280.00 275.44 -1.63 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result -20V -16V -12V -8V -4V 0V 4V 8V 0.92us 0.96us 1.00us 1.04us 1.08us 1.12us V(2) V(3)/3 Time Evaluation circuit Vsense RL 3 3.75 R2 L3 2 U1 2SJ493_PRO VD 30nH V2 = 20 10 -30Vdc V1 = 0 V1 TF = 10n R1 TD = 1u TR = 10n 10 PW = 10u PER = 10m 0 Simulation Result ID=-8A, VDD=-30V Measurement Simulation Error(%) VGS=0/-10V td (on) ns 15.00 15.07 0.47 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result -20A -4V -16A -12A -8A -3V -4A VGS=-2V 0A 0V -2V -4V -6V -8V -10V -12V -14V -16V -18V -20V I(V3) V_VDS Evaluation circuit V3 0Vdc U1 2SJ493 VDS -10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. BODY DIODE Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 2SJ493 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result 100 Measurement Simulation - Drain reverse Current - IDR (A) 10 1 0.1 0 1 2 Drain - Source Voltage VDS (V) Simulation Result VDS(V) IDR(A) %Error Measurement Simulation -0.1 0.610 0.609 -0.131 -0.2 0.640 0.638 -0.344 -0.5 0.680 0.683 0.441 -1 0.720 0.723 0.417 -2 0.780 0.779 -0.141 -5 0.890 0.890 -0.056 -10 1.020 1.022 0.176 -20 1.240 1.238 -0.194 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.7us 0.9us 1.1us 1.3us 1.5us 1.7us I(R1) Time Evaluation Circuit R1 50 V1 = -9.50V U1 V2 = 10.7V V1 D2SJ493_PRO TD = 45n TR = 10ns TF = 5.7ns PW = 1us PER = 50us 0 9Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 64.00 63.98 -0.03 trb ns 82.00 81.86 -0.17 trr ns 146.00 145.84 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Measurement Trj=64.00(ns) Trb=82.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m open open U1 2SJ493 V1 0Vdc Ropen 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007