SPICE MODEL of TPCP8401 (Standard+BDS N&P Model) in SPICE PARK
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The document provides a comprehensive device modeling report for the Toshiba power MOSFET TPCP8401, including key parameters such as transconductance, zero-bias threshold voltage, and various capacitances. It features circuit simulation results and comparisons with measurements for characteristics including gate charge, switching time, and output performance. Additionally, it discusses reverse recovery characteristics and ESD protection within the context of the device's operation.
SPICE MODEL of TPCP8401 (Standard+BDS N&P Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model parameter) PART NUMBER: TPCP8401 MANUFACTURER: TOSHIBA Body Diode (Model parameter) / ESD Protection Diode REMARK: Silicon N&P Channel MOS Type Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. N-Channel Model Transconductance Characteristic Circuit Simulation Result 0.26 0.21 0.16 gfs 0.11 0.06 Measurement Simulation 0.01 0 20 40 60 80 100 ID(mA) Comparison table gfs Id(mA) Error (%) Measurement Simulation 1 0.030 0.029 -3.333 2 0.040 0.040 0 5 0.063 0.064 1.587 10 0.090 0.091 1.111 20 0.133 0.128 -3.759 50 0.200 0.203 1.500 100 0.294 0.287 -2.381 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V I(V3) V_V1 Evaluation circuit V3 0Vdc OPEN OPEN U1 V2 TPCP8401 R1 5 V1 1G 2 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID - Drain Current (mA) 10 1 0 1 2 3 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(mA) Error (%) Measurement Simulation 1 1 1.0373 3.730 2 1.05 1.0668 1.600 5 1.15 1.1254 -2.139 10 1.22 1.1914 -2.344 20 1.32 1.2847 -2.674 50 1.5 1.47 -2.000 100 1.7 1.6790 -1.235 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 10mA 5mA 0A 0V 10mV 20mV 30mV I(V2) V_V3 Evaluation circuit V2 0Vdc OPEN V3 OPEN U1 TPCP8401 0Vdc V1 R1 4 1G 0 0 Simulation Result ID=10mA, VGS=4V Measurement Simulation Error (%) R DS (on) 1.5 1.5577 3.847 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0 0.4n 0.8n 1.2n 1.6n 2.0n V(W1:3) Time*1mA Evaluation circuit RON = 1.0 ROFF = 1e6 ION = 0 IOFF = 100u D1 Dbreak W1 OPEN + I2 - W 0.1 I1 R1 I1 = 0 I2 = 1m V1 1G TD = 0 TR = 10n 15 OPEN TF = 10n U1 PW = 300u PER = 500u TPCP8401 0 0 Simulation Result VDD=15V,ID=0.1A Measurement Simulation Error (%) Qgs 0.12 nC 0.121 nC 0.833 Qgd 0.304 nC 0.303 nC -0.329 Qg 0.8 nC 0.664 nC -17.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Reference 5 VDD=15V 4 GATE VOLTAGE Vg 3 2 1 0 0 0.4 0.8 1.2 1.6 2 GATE CHARGE Qg(nc) All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 7.2 7.19 -0.139 0.2 7 7 0 0.5 6.5 6.53 0.462 1 6 6 0.000 2 5.4 5.37 -0.556 5 4.5 4.51 0.222 10 3.9 3.88 -0.513 20 3.3 3.32 0.606 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 4.0V 3.0V 2.0V 1.0V 0V 9.697us 10.000us 10.400us 10.700us V(VOUT)/1.2 V(VGS) Time Evaluation circuit VOUT Vsense L3 RL 3 OPEN 30nH 300 OPEN L4 VGS U1 C1 R6 30nH VD TPCP8401 100u 3Vdc 1G R5 50 0 0 0 Simulation Result ID=10m A, VDD=3V Measurement Simulation Error(%) VGS=0/2.5V ton 70.000 ns 72.251 ns 3.216 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 250mA 200mA 1.9 V 150mA 1.7 V 100mA 1.5 V 50mA VGS=1.3 V 0A 0V 0.5V 1.0V 1.5V 2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc OPEN OPEN U1 V2 TPCP8401 V1 2 R1 1G 1.3 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. BODY DIODE Forward Current Characteristic Circuit Simulation Result 250mA 200mA 150mA 100mA 50mA 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(R1) V_V1 Evaluation Circuit R1 0.01m OPEN V1 U1 0Vdc TPCP8401 R2 1G OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain reverse current IDR(mA) 50 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source-Drain voltage VSD(V) Simulation Result VSD(V) Ifwd(mA) Measurement Simulation %Error 5 0.6 0.601 0.167 10 0.65 0.646 -0.615 20 0.69 0.694 0.580 50 0.765 0.763 -0.261 100 0.825 0.826 0.121 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 14.96us 15.00us 15.04us 15.08us 15.12us 15.16us I(RL) Time Evaluation Circuit RL 50 OPEN V1 = -9.2 V1 U1 V2 = 10.9 TD = 0 TPCP8401 TR = 10n TF = 10n R1 PW = 15u OPEN 1k PER = 100u 0 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trj+Trb (ns) 39.6 39.68 0.202 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=14(ns) Trb=25.6(ns) Conditions:Ifwd=lrev=0.02(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 25V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m OPEN U1 TPCP8401 R2 R3 V1 0Vdc 1G 1G OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 18. P-Channel Model Transconductance Characteristic Circuit Simulation Result 9.5 8.5 7.5 6.5 gfs 5.5 4.5 3.5 Measurement Simulation 2.5 0 0.4 0.8 1.2 1.6 2 ID(A) Comparison table gfs - Id(mA) Error(%) Measurement Simulation 0.2 2.857 2.985 4.480 0.5 4.717 4.505 -4.494 1 6.173 6.452 4.520 2 8.696 8.969 3.139 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 19. Vgs-Id Characteristic Circuit Simulation result -10A -8A -6A -4A -2A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 OPEN V2 OPEN R1 -5 OPEN OPEN 1G V1 TPCP8401 -3 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 20. Comparison Graph Circuit Simulation Result Measurement Simulation 1.8 1.4 ID - Drain Current (A) 1 0.6 0.2 0 1 2 3 VGS - Gate to Source Voltage - V Simulation Result - VGS(V) - ID(mA) Error (%) Measurement Simulation 0.2 1.1 1.1027 0.245 0.5 1.17 1.1857 1.342 1 1.25 1.28 2.400 2 1.35 1.4131 4.674 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 21. Rds(on) Characteristic Circuit Simulation result -2.8A -2.0A -1.0A 0A 0V -50mV -100mV -150mV -200mV I(V2) V_V3 Evaluation circuit V2 0Vdc U1 V3 OPEN 0Vdc V1 R1 -4.5 1G TPCP8401 OPEN 0 0 Simulation Result ID=-2.8A, VGS=-4.5V Measurement Simulation Error (%) R DS (on) 31.000 m 31.761 m 2.455 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 22. Gate Charge Characteristic Circuit Simulation result -5.0V -4.0V -3.0V -2.0V -1.0V 0V 0 8n 16n 24n 32n 40n V(W1:4) Time*1mA Evaluation circuit U1 W OPEN - + I2 D1 W1 Dbreak -5.5 IOFF = 100uA R1 I1 TD = 0 ION = 0 TF = 10n ROFF = 1e6 TPCP8401 1G PW = 200u RON = 1.0 V1 OPEN PER = 500u I1 = 0 I2 = 1m -10 TR = 10n 0 0 Simulation Result VDD=-10V,ID=-5.5A Measurement Simulation Error (%) ,VGS=-5V Qgs(nC) 5.5 5.57 1.273 Qgd(nC) 4.5 4.4507 -1.096 Qg(nC) 20.5 20.827 1.595 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 23. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) - VDS(V) Error(%) Measurement Simulation 0.1 300 298 -0.667 0.2 270 273 1.111 0.5 220 218 -0.909 1 170 173 1.765 2 130 127 -2.308 5 80 81 1.250 10 55 56 1.818 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 24. Switching Time Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 1.9us 2.0us 2.1us 2.2us V(U1:5) V(U1:2)/1.2 Time Evaluation circuit L1 R2 50nH 2.1 OPEN L2 U1 30nH V1 V1 = 0 V2 R1 V2 = -5 R4 TD = 2u -6 1G TR = 4n 4.7 OPEN TF = 4n PW = 10u PER = 30u TPCP8401 0 0 Simulation Result ID=-2.8 A, VDD=-6V Measurement Simulation Error(%) VGS=0/-5V Ton(ns) 16 16.053 0.331 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 25. Output Characteristic Circuit Simulation result -10A -1.9V -8A -1.8V -6A -1.7V -1.6V -4A VGS=-1.4V -2A 0A 0V -2.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 OPEN V2 OPEN V1 -5 R1 OPEN OPEN 1G -1.4 TPCP8401 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 26. BODY DIODE Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 OPEN V1 0Vdc R2 1G TPCP8401 OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 27. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain reverse current IDR(A) 10 1 0 0.4 0.8 1.2 1.6 2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 1 0.67 0.675 0.746 2 0.73 0.727 -0.411 5 0.82 0.818 -0.244 10 0.92 0.922 0.217 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 28. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 14.90us 15.04us 15.20us 15.30us I(RL) Time Evaluation Circuit RL 50 OPEN OPEN U2 V1 = -9.45 V1 V2 = 10.6 TPCP8401 R1 TD = 0 TR = 10n 1G TF = 10n PW = 15u PER = 100u 0 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trj+Trb (ns) 88 88.021 0.024 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 29. Reverse Recovery Characteristic Reference Trj=15.2(ns) Trb=72.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 30. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 25V 50V I(R1) V_V1 Evaluation Circuit R1 U1 0.01m OPEN R2 R3 V1 0Vdc TPCP8401 1G 1G OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 31. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006