TRANSISTORS
UNIT - 6
 A transistor is a semiconductor device commonly
used to amplify or switch electronic signals and
electrical power. It consists of three layers of
semiconductor material, typically made of silicon,
arranged in a specific order: the emitter, base, and
collector.
There are two main types of transistors:
 Bipolar Junction Transistor (BJT): It has three layers
and uses both electron and hole charge carriers. BJTs
are typically used for amplification and switching in
analog circuits.
 Field-Effect Transistor (FET): It controls the flow of
current using an electric field. FETs are primarily
used in digital circuits, including CMOS
(Complementary Metal-Oxide-Semiconductor)
technology, which is prevalent in modern electronics.
Bipolar Junction Transistor
Main Functions of a Transistor:
 Switching: A transistor can act as a switch,
turning current on and off in circuits, such as
in digital logic or power supplies.
 Amplification: It can amplify weak signals,
making them stronger. This function is crucial
in applications like audio and radio
frequency amplification.
Transistors have revolutionized electronics,
enabling the creation of integrated circuits
(ICs) and powering nearly all modern
electronic devices, from computers to
Smartphone's.
PNPTransistor
 A PNP transistor is a type of Bipolar
Junction Transistor (BJT) where the three
layers of semiconductor material are
arranged in the order P-type, N-type, P-type.
It has three main regions: the Emitter (P),
the Base (N), and the Collector (P).
Working Principle of a PNP Transistor:
 In a PNP transistor, current flows from the emitter to the
collector when it is in the "on" state.
 The flow of charge carriers in a PNP transistor involves holes
(positive charge carriers), which flow from the emitter (P-type)
to the collector (P-type).
 When a small current flows out of the base (N-type), it allows
a larger current to flow from the emitter to the collector.
Key Features of a PNP Transistor:
 Emitter: The emitter is always at a higher potential (more
positive) compared to the base and collector.
 Base: The base is at a lower potential (more negative) and
controls the flow of current between the emitter and collector.
 Collector: The collector is at a lower potential than the emitter
but typically higher than the base.
 A PNP transistor operates based on the
movement of holes (positive charge carriers)
through the three layers of the transistor. To
understand its behavior mathematically, let's
break it down with relevant equations and details.
Basic Structure:
 Emitter (P-type): The region where holes are
injected.
 Base (N-type): The thin region through which
holes flow from the emitter to the collector.
 Collector (P-type): The region where holes are
collected.
Current Flow in PNP Transistor:
 In a PNP transistor, current flows from the
emitter to the collector when the transistor is in
active mode. A small current at the base controls
this larger current.
 Emitter Current (IE​
): The current flowing out of the
emitter (since it's a PNP transistor, current flows out
of the emitter).
 Base Current (IB​
): The current flowing into the
base. In a PNP transistor, the base current is
negative since it enters the base.
 Collector Current (IC​
): The current flowing into the
collector (again, because it's a PNP transistor, the
current flows toward the collector).
Relationship Between Currents:
 For an ideal PNP transistor, the currents are related by the following
equation:
IE=IC+IB
​
This equation reflects the fact that the total current flowing through the
transistor's emitter is the sum of the current flowing through the collector
and the current flowing through the base.
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NPN Transistor
 An NPN transistor is a type of Bipolar Junction Transistor
(BJT) in which the three layers of semiconductor material are
arranged in the order N-type, P-type, N-type. It has three
regions: the Emitter (N), the Base (P), and the Collector (N).
Working Principle of NPN Transistor:
 Base-Emitter Junction: In an NPN transistor, when a small
positive current is injected into the base (relative to the
emitter), it allows a much larger current to flow from the
collector to the emitter.
 Electron Flow: In an NPN transistor, electrons (negative
charge carriers) are the majority carriers and move from the
emitter (N-type) to the collector (N-type), controlled by the
base current.
Key Features of an NPN Transistor:
 Emitter: The emitter is heavily doped and
always at a higher potential (more positive)
compared to the base and collector.
 Base: The base is thin and lightly doped,
allowing the transistor to control current
efficiently.
 Collector: The collector is moderately doped
and generally at a higher potential than the
base but lower than the emitter.
Operation of an NPN Transistor:
 When the transistor is in active mode:
 The base-emitter junction is forward biased (positive
voltage applied to the base relative to the emitter).
 The base-collector junction is reverse biased (the
base is more negative than the collector).
 Electrons flow from the emitter (N-type) to the base
(P-type) and then to the collector (N-type).
Current Relationships in NPN Transistor:
 The relationship between the three
currents in an NPN transistor is given by:
IE=IB+IC
​
Where:
 IE​is the emitter current (current flowing
out of the emitter),
 IB is the base current (current flowing into
the base),
 IC​is the collector current (current flowing
into the collector).
Base-Emitter and Base-Collector Voltages:
For the transistor to be in active mode:
•The base-emitter junction should be forward biased
with a voltage of approximately VBE +0.7 V for a silicon
≈
NPN transistor.
•The base-collector junction should be reverse biased
with VBC<0.
Active, Cutoff, and Saturation Regions:
 Active Region: The transistor is amplifying and behaves as a current
amplifier. The base-emitter junction is forward biased, and the base-
collector junction is reverse biased.
 Saturation Region: Both the base-emitter and base-collector junctions are
forward biased. The transistor behaves like a closed switch.
 Cutoff Region: Both the base-emitter and base-collector junctions are
reverse biased, and no current flows.
Amplification Equation:
 In the active region, the NPN transistor amplifies the input signal by
controlling the larger current in the collector with a smaller current in the
base. The output collector current is related to the input base current as:
IC=β I
⋅ B + IB = (β+1) I
⋅ B
 ​
This is the basic equation governing the operation of the NPN transistor in
amplification.
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Transistor Configurations
 In a Bipolar Junction Transistor (BJT),
there are three main configurations that
define how the transistor is used in an
electronic circuit. These configurations are
based on which transistor terminal (emitter,
base, or collector) is used as the input and
output. The three main configurations are:
 Common Emitter (CE) Configuration
 Common Base (CB) Configuration
 Common Collector (CC) Configuration
Common Emitter (CE) Configuration
 Description: The emitter is common to both the input
and output terminals. In this configuration, the input
signal is applied between the base and emitter, while
the output is taken between the collector and emitter.
 Applications: The common emitter configuration is
widely used for amplification due to its high voltage
and current gain. It is the most common configuration
in analog circuits, such as in audio amplifiers, signal
amplification, and switching.
 Input and Output Characteristics:
 Input: The input is applied at the base, and the emitter is
usually connected to ground (or a reference voltage in some
cases).
 Output: The output is taken across the collector and emitter.
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 Voltage Gain: The common emitter amplifier
provides moderate to high voltage gain.
 Current Gain: The current gain is also high, but
the current gain β is dependent on the
transistor's characteristics.
 Phase Shift: There is a 180° phase shift
between the input and output signals, meaning
the output is inverted with respect to the input.
Equation:
 Amplification Equation:
Vout= A
− v V
⋅ in​
,
where
Av​is the voltage gain.
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Advantages:
 High voltage gain.
 High current gain.
 It works as an amplifier and inverter.
Disadvantages:
 The output is inverted (phase shift).
 It requires biasing to keep the
transistor in the active region.
Common Base (CB)
Configuration
 The base is common to both the input and output
terminals. In this configuration, the input signal is
applied between the emitter and base, while the
output is taken between the collector and base.
 Applications: The common base configuration is
used when high-frequency operation is needed,
as it has a low input impedance and is used in high-
frequency amplifiers (e.g., RF amplifiers).
Input and Output Characteristics:
 Input: The input signal is applied between the
emitter and base.
 Output: The output is taken between the collector
and base.
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 Voltage Gain: The common base
configuration typically provides high
voltage gain.
 Current Gain: It has a low current
gain (β 1), making it less suitable for
≈
current amplification.
 Phase Shift: There is no phase
inversion in the common base
configuration, meaning the output
signal is in phase with the input signal.
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Advantages:
•High voltage gain.
•High-frequency response (used in RF amplifiers).
•No phase inversion.
Disadvantages:
•Low input impedance (not suitable for high-impedance
sources).
•Low current gain.
Common Collector (CC)
Configuration
 The collector is common to both the input and output
terminals. In this configuration, the input signal is
applied between the base and collector, and the
output is taken between the emitter and collector.
 Applications: The common collector configuration is
known as a voltage follower or emitter follower. It is
used to provide high current gain and buffering in
circuits like impedance matching and in situations
where you need to isolate stages of a circuit.
Input and Output Characteristics:
 Input: The input is applied at the base relative to the
collector.
 Output: The output is taken from the emitter relative
to the collector.
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 Voltage Gain: The common collector
configuration has unity voltage gain
(Av 1), meaning the output voltage is
≈
roughly the same as the input voltage.
 Current Gain: It has a high current
gain, making it suitable for impedance
matching (i.e., transforming a high input
impedance to a low output impedance).
 Phase Shift: There is no phase
inversion; the output signal is in phase
with the input.
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Advantages:
 High current gain.
 No phase inversion.
 Provides impedance matching (acts as a
buffer).
 Suitable for driving low-impedance
loads.
Disadvantages:
 No voltage amplification (unity gain).
 Limited voltage swing.
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Transistor as an
Amplifier
 A transistor amplifier is a type of electronic circuit
that uses a transistor (either NPN or PNP) to
amplify a small input signal into a larger output
signal.
 Amplification refers to increasing the amplitude
of a signal, whether it is a voltage, current, or
power, without changing the signal's original form.
 Transistor amplifiers are widely used in various
applications, including audio systems,
communication systems, and electronic devices,
to amplify weak signals for further processing, such
as in radio receivers, television, audio amplifiers,
etc.
Basic Working Principle of a Transistor as an Amplifier:
 In a transistor amplifier, the transistor is used to control
a large output current (or voltage) using a small input
signal.
 A small input current or voltage is applied to the base of
the transistor (for an NPN transistor), which causes a
larger current to flow between the collector and the
emitter (for an NPN transistor).
 The amplifier works based on the relationship between
the base current IB​and the collector current IC​
.
 In common emitter configuration, which is the most
commonly used transistor amplifier configuration, the
transistor amplifies the input signal at the base to
provide a larger output signal at the collector.
Components and Structure:
•Input signal: This is the weak signal that needs to be amplified.
•Biasing resistors: Set the operating point of the transistor in its
active region, ensuring that it works as an amplifier.
•Coupling capacitors: Block DC components while allowing AC
components of the signal to pass through.
•Load resistor: Connected to the collector to determine the output
voltage swing.
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Unit-6 beeee E1 notes best notes ever best

  • 2.  A transistor is a semiconductor device commonly used to amplify or switch electronic signals and electrical power. It consists of three layers of semiconductor material, typically made of silicon, arranged in a specific order: the emitter, base, and collector. There are two main types of transistors:  Bipolar Junction Transistor (BJT): It has three layers and uses both electron and hole charge carriers. BJTs are typically used for amplification and switching in analog circuits.  Field-Effect Transistor (FET): It controls the flow of current using an electric field. FETs are primarily used in digital circuits, including CMOS (Complementary Metal-Oxide-Semiconductor) technology, which is prevalent in modern electronics.
  • 4. Main Functions of a Transistor:  Switching: A transistor can act as a switch, turning current on and off in circuits, such as in digital logic or power supplies.  Amplification: It can amplify weak signals, making them stronger. This function is crucial in applications like audio and radio frequency amplification. Transistors have revolutionized electronics, enabling the creation of integrated circuits (ICs) and powering nearly all modern electronic devices, from computers to Smartphone's.
  • 5. PNPTransistor  A PNP transistor is a type of Bipolar Junction Transistor (BJT) where the three layers of semiconductor material are arranged in the order P-type, N-type, P-type. It has three main regions: the Emitter (P), the Base (N), and the Collector (P).
  • 6. Working Principle of a PNP Transistor:  In a PNP transistor, current flows from the emitter to the collector when it is in the "on" state.  The flow of charge carriers in a PNP transistor involves holes (positive charge carriers), which flow from the emitter (P-type) to the collector (P-type).  When a small current flows out of the base (N-type), it allows a larger current to flow from the emitter to the collector. Key Features of a PNP Transistor:  Emitter: The emitter is always at a higher potential (more positive) compared to the base and collector.  Base: The base is at a lower potential (more negative) and controls the flow of current between the emitter and collector.  Collector: The collector is at a lower potential than the emitter but typically higher than the base.
  • 7.  A PNP transistor operates based on the movement of holes (positive charge carriers) through the three layers of the transistor. To understand its behavior mathematically, let's break it down with relevant equations and details. Basic Structure:  Emitter (P-type): The region where holes are injected.  Base (N-type): The thin region through which holes flow from the emitter to the collector.  Collector (P-type): The region where holes are collected.
  • 8. Current Flow in PNP Transistor:  In a PNP transistor, current flows from the emitter to the collector when the transistor is in active mode. A small current at the base controls this larger current.  Emitter Current (IE​ ): The current flowing out of the emitter (since it's a PNP transistor, current flows out of the emitter).  Base Current (IB​ ): The current flowing into the base. In a PNP transistor, the base current is negative since it enters the base.  Collector Current (IC​ ): The current flowing into the collector (again, because it's a PNP transistor, the current flows toward the collector).
  • 9. Relationship Between Currents:  For an ideal PNP transistor, the currents are related by the following equation: IE=IC+IB ​ This equation reflects the fact that the total current flowing through the transistor's emitter is the sum of the current flowing through the collector and the current flowing through the base.
  • 18. NPN Transistor  An NPN transistor is a type of Bipolar Junction Transistor (BJT) in which the three layers of semiconductor material are arranged in the order N-type, P-type, N-type. It has three regions: the Emitter (N), the Base (P), and the Collector (N). Working Principle of NPN Transistor:  Base-Emitter Junction: In an NPN transistor, when a small positive current is injected into the base (relative to the emitter), it allows a much larger current to flow from the collector to the emitter.  Electron Flow: In an NPN transistor, electrons (negative charge carriers) are the majority carriers and move from the emitter (N-type) to the collector (N-type), controlled by the base current.
  • 19. Key Features of an NPN Transistor:  Emitter: The emitter is heavily doped and always at a higher potential (more positive) compared to the base and collector.  Base: The base is thin and lightly doped, allowing the transistor to control current efficiently.  Collector: The collector is moderately doped and generally at a higher potential than the base but lower than the emitter.
  • 20. Operation of an NPN Transistor:  When the transistor is in active mode:  The base-emitter junction is forward biased (positive voltage applied to the base relative to the emitter).  The base-collector junction is reverse biased (the base is more negative than the collector).  Electrons flow from the emitter (N-type) to the base (P-type) and then to the collector (N-type).
  • 21. Current Relationships in NPN Transistor:  The relationship between the three currents in an NPN transistor is given by: IE=IB+IC ​ Where:  IE​is the emitter current (current flowing out of the emitter),  IB is the base current (current flowing into the base),  IC​is the collector current (current flowing into the collector).
  • 22. Base-Emitter and Base-Collector Voltages: For the transistor to be in active mode: •The base-emitter junction should be forward biased with a voltage of approximately VBE +0.7 V for a silicon ≈ NPN transistor. •The base-collector junction should be reverse biased with VBC<0.
  • 23. Active, Cutoff, and Saturation Regions:  Active Region: The transistor is amplifying and behaves as a current amplifier. The base-emitter junction is forward biased, and the base- collector junction is reverse biased.  Saturation Region: Both the base-emitter and base-collector junctions are forward biased. The transistor behaves like a closed switch.  Cutoff Region: Both the base-emitter and base-collector junctions are reverse biased, and no current flows. Amplification Equation:  In the active region, the NPN transistor amplifies the input signal by controlling the larger current in the collector with a smaller current in the base. The output collector current is related to the input base current as: IC=β I ⋅ B + IB = (β+1) I ⋅ B  ​ This is the basic equation governing the operation of the NPN transistor in amplification.
  • 26. Transistor Configurations  In a Bipolar Junction Transistor (BJT), there are three main configurations that define how the transistor is used in an electronic circuit. These configurations are based on which transistor terminal (emitter, base, or collector) is used as the input and output. The three main configurations are:  Common Emitter (CE) Configuration  Common Base (CB) Configuration  Common Collector (CC) Configuration
  • 27. Common Emitter (CE) Configuration  Description: The emitter is common to both the input and output terminals. In this configuration, the input signal is applied between the base and emitter, while the output is taken between the collector and emitter.  Applications: The common emitter configuration is widely used for amplification due to its high voltage and current gain. It is the most common configuration in analog circuits, such as in audio amplifiers, signal amplification, and switching.  Input and Output Characteristics:  Input: The input is applied at the base, and the emitter is usually connected to ground (or a reference voltage in some cases).  Output: The output is taken across the collector and emitter.
  • 29.  Voltage Gain: The common emitter amplifier provides moderate to high voltage gain.  Current Gain: The current gain is also high, but the current gain β is dependent on the transistor's characteristics.  Phase Shift: There is a 180° phase shift between the input and output signals, meaning the output is inverted with respect to the input. Equation:  Amplification Equation: Vout= A − v V ⋅ in​ , where Av​is the voltage gain.
  • 32. Advantages:  High voltage gain.  High current gain.  It works as an amplifier and inverter. Disadvantages:  The output is inverted (phase shift).  It requires biasing to keep the transistor in the active region.
  • 33. Common Base (CB) Configuration  The base is common to both the input and output terminals. In this configuration, the input signal is applied between the emitter and base, while the output is taken between the collector and base.  Applications: The common base configuration is used when high-frequency operation is needed, as it has a low input impedance and is used in high- frequency amplifiers (e.g., RF amplifiers). Input and Output Characteristics:  Input: The input signal is applied between the emitter and base.  Output: The output is taken between the collector and base.
  • 35.  Voltage Gain: The common base configuration typically provides high voltage gain.  Current Gain: It has a low current gain (β 1), making it less suitable for ≈ current amplification.  Phase Shift: There is no phase inversion in the common base configuration, meaning the output signal is in phase with the input signal.
  • 37. Advantages: •High voltage gain. •High-frequency response (used in RF amplifiers). •No phase inversion. Disadvantages: •Low input impedance (not suitable for high-impedance sources). •Low current gain.
  • 38. Common Collector (CC) Configuration  The collector is common to both the input and output terminals. In this configuration, the input signal is applied between the base and collector, and the output is taken between the emitter and collector.  Applications: The common collector configuration is known as a voltage follower or emitter follower. It is used to provide high current gain and buffering in circuits like impedance matching and in situations where you need to isolate stages of a circuit. Input and Output Characteristics:  Input: The input is applied at the base relative to the collector.  Output: The output is taken from the emitter relative to the collector.
  • 40.  Voltage Gain: The common collector configuration has unity voltage gain (Av 1), meaning the output voltage is ≈ roughly the same as the input voltage.  Current Gain: It has a high current gain, making it suitable for impedance matching (i.e., transforming a high input impedance to a low output impedance).  Phase Shift: There is no phase inversion; the output signal is in phase with the input.
  • 43. Advantages:  High current gain.  No phase inversion.  Provides impedance matching (acts as a buffer).  Suitable for driving low-impedance loads. Disadvantages:  No voltage amplification (unity gain).  Limited voltage swing.
  • 45. Transistor as an Amplifier  A transistor amplifier is a type of electronic circuit that uses a transistor (either NPN or PNP) to amplify a small input signal into a larger output signal.  Amplification refers to increasing the amplitude of a signal, whether it is a voltage, current, or power, without changing the signal's original form.  Transistor amplifiers are widely used in various applications, including audio systems, communication systems, and electronic devices, to amplify weak signals for further processing, such as in radio receivers, television, audio amplifiers, etc.
  • 46. Basic Working Principle of a Transistor as an Amplifier:  In a transistor amplifier, the transistor is used to control a large output current (or voltage) using a small input signal.  A small input current or voltage is applied to the base of the transistor (for an NPN transistor), which causes a larger current to flow between the collector and the emitter (for an NPN transistor).  The amplifier works based on the relationship between the base current IB​and the collector current IC​ .  In common emitter configuration, which is the most commonly used transistor amplifier configuration, the transistor amplifies the input signal at the base to provide a larger output signal at the collector.
  • 47. Components and Structure: •Input signal: This is the weak signal that needs to be amplified. •Biasing resistors: Set the operating point of the transistor in its active region, ensuring that it works as an amplifier. •Coupling capacitors: Block DC components while allowing AC components of the signal to pass through. •Load resistor: Connected to the collector to determine the output voltage swing.