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16th IEEE European Test Symposium
                                   May 23-27, 2011




Wafer-Level RF MEMS Devices
Characterization in Cryogenic
Environment
Gavin Fisher, Andrej Rumiantsev,
Frank-Michael Werner, Stojan Kanev
Outline


 RF MEMS Test Challenges

 System Solution for RF MEMS

 Measurement Examples

 Conclusion
RF MEMS Test Challenges

   MEMS device: microsystem based planar fabrication technology
    combining mechanical and electrical functions (multi-physics
    interaction)
   Testing and characterization are extremely sensitive to ambient
    parameters
   Tests require:
     – Controlled (closed) environment
     – RF and microwave interface
 For RF testing thermal stability of probes and cables is
  essential to maintain calibration stability
     – Core solution, Keep probes and cables at DUT temperature
     – Calibration monitoring to provide accurate feedback of
       calibration state
RF MEMS Test Challenges (cont.)


 Probing of whole wafer, wafer pieces and dies
 Maintenance of calibration substrates
 Contact reliability
 Contact repeatability
 Electrical performance of RF probes
 Temperature stability of calibration standards
 Integration with various test instrumentation
Outline


 RF MEMS Test Challenges

 System Solution for RF MEMS

 Measurement Examples

 Conclusion
Putting a Prober Inside a Vacuum Chamber

                    Reserve                                    4x RF Feedthrough
                                                                    67 GHz
                                                                      Reserve for
         Reserve                                                        PH #8
        for PH #9                                                      DC Triax
                              Fixed cold shield
                                                                             4x DC Triax
                                                                             Feedthrough


 PH #6                                                                              PH #3
 67GHz                                                                             DC Triax


PH #5                                                                                 PH #2
67GHz                                                                                 67GHz


 PH #4                                                                             PH #1
DC Triax                                                                           67GHz


                                             Removable
                                             cold shield
         PH #7                                                         Reserve
        DC Triax                                                      for PH #10


            Venting Valve




                              Y                            X
                                                  Z

                                            Chuck Stage
                                              Control
Putting a Prober Inside a Vacuum Chamber
Enables:
Temperature
Vacuum
Gases composition
                          Applications:
High pressure            RF MEMS
Light and sound          Emerging MEMS
shielding                 Micro fuel cells
                          Microbolometers
EMC
                          Gyroscopes
Humidity                 Accelerometers
                          Pressure sensors
Cryogenic System for Device Characterization


 Temperature range: 4K … 675K
 Up to 8 positioners
 Low signal IV/CV: <100fA
 High frequency: up to 67GHz
 Integration kits for Agilent and
  Keithley
 EM shielding and light tightness
Motion Monitoring in Cryogenic Environment

 Integration with Polytec MSA-500 Micro System
  Analyzer



Example of RF MEMS Switch
Features – Wafer, Sample and Die Carriers




                                                                    Carrier solution for Manual Systems
                                                                    prepared for fixing RF calibration
                                                                    substrates




                                    Special carrier solution for      Special carrier solution for diced
Standard 200 mm wafer carrier   fixing multiple single substrates     pieces with various shapes
Features – Vacuum Positioners
 Easy and reliable probe landing
 Short and stiff arms
 Manipulation from outside by rotary
  feedthroughs
 Magnetic foot (standard) for highest
  flexibility in probe configuration
 12 mm XYZ movement range
 Arms:
    – DC triaxial flex
    – DC for AP&T
    – RF for IZI Probe etc.
    – DC&RF for
      Multi IZI Probes
Features – Vacuum Positioners
 DC probes (triax, coax)
 AP&T probe for CV
 RF Probe up to 67GHz
 Multi IZI Probes
 Cryogenic probe arms with
  active probe and cable cooling
  to ensure stable
  measurements
 High vacuum feedthroughs
 Calibration substrates
Outline


 RF MEMS Test Challenges

 System Solution for RF MEMS

 Measurement Examples

 Conclusion
System Features: System Drift, 4 Hours
                                         |Sij' - Sij|/|Sij| and |Sii' - Sii|
                      0.15
                                        System Drift, 4K

                                        System Drift, RT
                      0.10



                      0.05



                          0
                              0              10          20       30                           40
                                                  Frequency (GHz)


   System drift @ 4K is comparable with the room temperature
H. Geissler, A. Rumiantsev, S. Schott, P. Sakalas, and M. Schroter, "A novel probe station for helium temperature on-wafer
measurements " in ARFTG Microwave Measurements Conference-Fall, 68th, 2006, pp. 67-73.
Wincal XE – Cal monitoring alarms

 Wincal can perform a spot measurement and
  provide alarm if system has drifted beyond limits
Measurement aid – Wincal XE
   Probing at cryogenic temperatures can be challenging and it is helpful
    to be able to check that good contact is established
   Wincal XE can do this with a single button press
Wincal XE Advanced reporting
 Wincal can perform pad parasitic removal de-
  embedding and parameter extraction“on the fly”
Temperature Stability of Standards

                          Line (Thru)                                                             Load




   Temperature stable wafer-level calibration standards for
   accurate measurements down to 4K

A. Rumiantsev, R. Doerner, and P. Sakalas, "Verification of wafer-level calibration accuracy at cryogenic temperatures " in
ARFTG Microwave Measurements Conference-Fall, 68th, 2006, pp. 134-140.
Cryogenic |Z| Probe Contact Repeatability @ 4K


                  First Contact                                                 Second Contact
  0                                   DB(|S[1,1]|)          0
                                      Thru                                                               DB(|S[1,1]|)
 -10                                                       -10
                                                                                                         Thru_2
 -20                                  DB(|S[2,2]|)         -20
                                      Thru                                                               DB(|S[2,2]|)
 -30                                                       -30                                           Thru_2
 -40                                                       -40

 -50                                                       -50

 -60                                                       -60

 -70                                                       -70

 -80                                                       -80

 -90                                                       -90

-100                                                      -100
       0     10    20           30   40              50          0.04   10.04     20.04     30.04        40.04          50
                   Frequency (GHz)                                                FREQUENCY (GHz)




Excellent contact repeatability guarantees reliable and
trustable results
                                                                                                    *Measured with thru standard
RF MEMS Switch


 Procedure:
   – S parameters measurement before
     cycling
   – C(V) measurement
   – Cycling @ 100 Hz, unipolar, 55V, 50%
     duty cycle
   – S-parameters after cycling
 To do and outcome :
   – Extraction of ∆V vs. cycles
   – Pull-in Pull-out parameters dependence
     on the environment conditions
CV Curves for Different Testing Conditions
                                                                      1 .2
                                                                                                                           1
                                                    (1 )                                                                   2
                                                                      1 .0
                                                    (2 )                                                                   3
         10
                                                    (3)                                                                    4
                                                    (4)               0.8




                                                           C (p F )
                                                                      0.6
∆V (V)




                                                                      0.4
          1

                                                                      0.2


                                                                      0.0
              10          1 00              1 000                       -80   -60   -40   -2 0   0     20   40   60   80

                        N b o f c yc le s                                                   Vo ltag e (V)



 1: Room ambient @ ~296°C, 45% RH
 2: Vacuum @ 1.4E-5 mbar – 296K
 3: N2 @ 1.02 atm – 296K
 4: Vacuum @ 2.2E-6 mbar – 223K
S-Parameters for Different Testing Conditions
                                                        B E F O R E C YC L IN G                                                        B E F O R E C YC L IN G

                                     0
                                                                                                                     0.0
Before cycling




                                                                                                                    -0.5
                                   -2 0
                                                                                                                    -1 .0
                    S 1 1 (d B )




                                                                                                     S 2 1 (d B )
                                                                                                                    -1 .5
                                   -40                                                  (1 )                                         (1 )
                                                                                        (2 )                                         (2 )
                                                                                                                    -2 .0
                                                                                        (3)                                          (3)
                                   -60                                                  (4)                                          (4)
                                                                                                                    -2 .5


                                          0   10   20           30          40     50          60                   -3.0
                                                                                                                            0   10    20          30             40   50   60
                                                             GHz
                                                                                                                                                GHz
                                                                                                                     0.0
                                     0
After 1000 cycles




                                                                                                                    -0.5

                                   -2 0
                                                                                                                    -1 .0
                                                                                                     S 2 1 (d B )
                    S 1 1 (d B )




                                                                                                                                              (1 )
                                                                                                                    -1 .5
                                   -40                                                  (1 )                                                  (2 )
                                                                                        (2 )                                                  (3)
                                                                                                                    -2 .0                     (4)
                                                                                        (3)
                                                                                        (4)
                                   -60
                                                                                                                    -2 .5

                                          0   10   20            30           40   50           60                          0   10    20          30             40   50   60

                                                               GHz                                                                              GHz
Outline


 RF MEMS Test Challenges

 System Solution for RF MEMS

 Measurement Examples

 Conclusion
Conclusion


 Wafer-level testing of RF MEMS significantly reduces
  fabrication cost and time to market
 Cryogenic Probe Systems covering the whole range
  of RF MEMS test requirements are available
 System design and measurement know-how of
  Cascade Microtech provides you with “environment
  independent” measurement accuracy, repeatability
  and confidence in your results
Acknowledgement


   Jason Ruan, Alexandre Rumeau,
   Laurent Bary and Fabio Coccetti
from CNRS, LAAS, Toulouse (France)
     for excellent support with the
         measurement results
          of the RF Switches
Questions?

If you have any questions or comments, please
contact:

Frank-Michael Werner
Business Manager
VAC / CRYO Systems and MEMS Test

E-mail: frank-michael.werner@cmicro.com
Office: +49 (35240) 73-330
Mobile: +49 151 1210 8668

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Wafer-Level RF MEMS Devices Characterization in Cryogenic Environment

  • 1. 16th IEEE European Test Symposium May 23-27, 2011 Wafer-Level RF MEMS Devices Characterization in Cryogenic Environment Gavin Fisher, Andrej Rumiantsev, Frank-Michael Werner, Stojan Kanev
  • 2. Outline  RF MEMS Test Challenges  System Solution for RF MEMS  Measurement Examples  Conclusion
  • 3. RF MEMS Test Challenges  MEMS device: microsystem based planar fabrication technology combining mechanical and electrical functions (multi-physics interaction)  Testing and characterization are extremely sensitive to ambient parameters  Tests require: – Controlled (closed) environment – RF and microwave interface  For RF testing thermal stability of probes and cables is essential to maintain calibration stability – Core solution, Keep probes and cables at DUT temperature – Calibration monitoring to provide accurate feedback of calibration state
  • 4. RF MEMS Test Challenges (cont.)  Probing of whole wafer, wafer pieces and dies  Maintenance of calibration substrates  Contact reliability  Contact repeatability  Electrical performance of RF probes  Temperature stability of calibration standards  Integration with various test instrumentation
  • 5. Outline  RF MEMS Test Challenges  System Solution for RF MEMS  Measurement Examples  Conclusion
  • 6. Putting a Prober Inside a Vacuum Chamber Reserve 4x RF Feedthrough 67 GHz Reserve for Reserve PH #8 for PH #9 DC Triax Fixed cold shield 4x DC Triax Feedthrough PH #6 PH #3 67GHz DC Triax PH #5 PH #2 67GHz 67GHz PH #4 PH #1 DC Triax 67GHz Removable cold shield PH #7 Reserve DC Triax for PH #10 Venting Valve Y X Z Chuck Stage Control
  • 7. Putting a Prober Inside a Vacuum Chamber Enables: Temperature Vacuum Gases composition Applications: High pressure RF MEMS Light and sound Emerging MEMS shielding Micro fuel cells Microbolometers EMC Gyroscopes Humidity Accelerometers Pressure sensors
  • 8. Cryogenic System for Device Characterization  Temperature range: 4K … 675K  Up to 8 positioners  Low signal IV/CV: <100fA  High frequency: up to 67GHz  Integration kits for Agilent and Keithley  EM shielding and light tightness
  • 9. Motion Monitoring in Cryogenic Environment  Integration with Polytec MSA-500 Micro System Analyzer Example of RF MEMS Switch
  • 10. Features – Wafer, Sample and Die Carriers Carrier solution for Manual Systems prepared for fixing RF calibration substrates Special carrier solution for Special carrier solution for diced Standard 200 mm wafer carrier fixing multiple single substrates pieces with various shapes
  • 11. Features – Vacuum Positioners  Easy and reliable probe landing  Short and stiff arms  Manipulation from outside by rotary feedthroughs  Magnetic foot (standard) for highest flexibility in probe configuration  12 mm XYZ movement range  Arms: – DC triaxial flex – DC for AP&T – RF for IZI Probe etc. – DC&RF for Multi IZI Probes
  • 12. Features – Vacuum Positioners  DC probes (triax, coax)  AP&T probe for CV  RF Probe up to 67GHz  Multi IZI Probes  Cryogenic probe arms with active probe and cable cooling to ensure stable measurements  High vacuum feedthroughs  Calibration substrates
  • 13. Outline  RF MEMS Test Challenges  System Solution for RF MEMS  Measurement Examples  Conclusion
  • 14. System Features: System Drift, 4 Hours |Sij' - Sij|/|Sij| and |Sii' - Sii| 0.15 System Drift, 4K System Drift, RT 0.10 0.05 0 0 10 20 30 40 Frequency (GHz) System drift @ 4K is comparable with the room temperature H. Geissler, A. Rumiantsev, S. Schott, P. Sakalas, and M. Schroter, "A novel probe station for helium temperature on-wafer measurements " in ARFTG Microwave Measurements Conference-Fall, 68th, 2006, pp. 67-73.
  • 15. Wincal XE – Cal monitoring alarms  Wincal can perform a spot measurement and provide alarm if system has drifted beyond limits
  • 16. Measurement aid – Wincal XE  Probing at cryogenic temperatures can be challenging and it is helpful to be able to check that good contact is established  Wincal XE can do this with a single button press
  • 17. Wincal XE Advanced reporting  Wincal can perform pad parasitic removal de- embedding and parameter extraction“on the fly”
  • 18. Temperature Stability of Standards Line (Thru) Load Temperature stable wafer-level calibration standards for accurate measurements down to 4K A. Rumiantsev, R. Doerner, and P. Sakalas, "Verification of wafer-level calibration accuracy at cryogenic temperatures " in ARFTG Microwave Measurements Conference-Fall, 68th, 2006, pp. 134-140.
  • 19. Cryogenic |Z| Probe Contact Repeatability @ 4K First Contact Second Contact 0 DB(|S[1,1]|) 0 Thru DB(|S[1,1]|) -10 -10 Thru_2 -20 DB(|S[2,2]|) -20 Thru DB(|S[2,2]|) -30 -30 Thru_2 -40 -40 -50 -50 -60 -60 -70 -70 -80 -80 -90 -90 -100 -100 0 10 20 30 40 50 0.04 10.04 20.04 30.04 40.04 50 Frequency (GHz) FREQUENCY (GHz) Excellent contact repeatability guarantees reliable and trustable results *Measured with thru standard
  • 20. RF MEMS Switch  Procedure: – S parameters measurement before cycling – C(V) measurement – Cycling @ 100 Hz, unipolar, 55V, 50% duty cycle – S-parameters after cycling  To do and outcome : – Extraction of ∆V vs. cycles – Pull-in Pull-out parameters dependence on the environment conditions
  • 21. CV Curves for Different Testing Conditions 1 .2 1 (1 ) 2 1 .0 (2 ) 3 10 (3) 4 (4) 0.8 C (p F ) 0.6 ∆V (V) 0.4 1 0.2 0.0 10 1 00 1 000 -80 -60 -40 -2 0 0 20 40 60 80 N b o f c yc le s Vo ltag e (V) 1: Room ambient @ ~296°C, 45% RH 2: Vacuum @ 1.4E-5 mbar – 296K 3: N2 @ 1.02 atm – 296K 4: Vacuum @ 2.2E-6 mbar – 223K
  • 22. S-Parameters for Different Testing Conditions B E F O R E C YC L IN G B E F O R E C YC L IN G 0 0.0 Before cycling -0.5 -2 0 -1 .0 S 1 1 (d B ) S 2 1 (d B ) -1 .5 -40 (1 ) (1 ) (2 ) (2 ) -2 .0 (3) (3) -60 (4) (4) -2 .5 0 10 20 30 40 50 60 -3.0 0 10 20 30 40 50 60 GHz GHz 0.0 0 After 1000 cycles -0.5 -2 0 -1 .0 S 2 1 (d B ) S 1 1 (d B ) (1 ) -1 .5 -40 (1 ) (2 ) (2 ) (3) -2 .0 (4) (3) (4) -60 -2 .5 0 10 20 30 40 50 60 0 10 20 30 40 50 60 GHz GHz
  • 23. Outline  RF MEMS Test Challenges  System Solution for RF MEMS  Measurement Examples  Conclusion
  • 24. Conclusion  Wafer-level testing of RF MEMS significantly reduces fabrication cost and time to market  Cryogenic Probe Systems covering the whole range of RF MEMS test requirements are available  System design and measurement know-how of Cascade Microtech provides you with “environment independent” measurement accuracy, repeatability and confidence in your results
  • 25. Acknowledgement Jason Ruan, Alexandre Rumeau, Laurent Bary and Fabio Coccetti from CNRS, LAAS, Toulouse (France) for excellent support with the measurement results of the RF Switches
  • 26. Questions? If you have any questions or comments, please contact: Frank-Michael Werner Business Manager VAC / CRYO Systems and MEMS Test E-mail: frank-michael.werner@cmicro.com Office: +49 (35240) 73-330 Mobile: +49 151 1210 8668