SPICE MODEL of 2SC5808-TL-E in SPICE PARK
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This document summarizes the modeling of the 2SC5808-TL-E transistor. It includes: 1) A list of the transistor model parameters and their descriptions. 2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more from both measurement and simulation results. 3) Tables comparing measurement and simulation results for characteristics like hFE-IC, VCE(sat)-IC, and switching times. 4) Circuit diagrams used to simulate the transistor characteristics.
SPICE MODEL of 2SC5808-TL-E in SPICE PARK
- 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SC5808-TL-E MANUFACTURER: SANYO Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
- 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
- 3. Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
- 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation Emitter Current All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
- 5. Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
- 6. C-B Capacitance Characteristics Measurement Simulation E-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
- 7. Transistor hFE-IC Characteristics Circuit Simulation Result 1.0K 100 10 1.0 1.0mA 10mA 100mA 1.0A 5.0A I(vsence)/ IB(Q1) I(vsence) Evaluation Circuit v sence 0Vdc Q1 Q2SC5808-TL-E V1 I1 5Vdc 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
- 8. Comparison Graph Circuit Simulation Result Simulation Result hFE IC(A) Error(%) Measurement Simulation 0.001 23.455 22.618 -3.569 0.002 24.174 23.728 -1.845 0.005 26.000 25.085 -3.519 0.010 27.000 25.997 -3.715 0.020 27.300 26.769 -1.945 0.050 28.606 27.520 -3.795 0.100 28.500 27.665 -2.930 0.200 28.000 27.111 -3.175 0.500 25.000 24.268 -2.928 1.000 19.300 18.741 -2.896 2.000 8.259 7.980 -3.387 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
- 9. VCE(Sat)-IC Characteristics Circuit Simulation Result 10V 1.0V 100mV 10mV 1.0mV 10mA 100mA 1.0A 5.0A V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 Q2SC5808-TL-E F1 F I1 5 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
- 10. Comparison Graph Circuit Simulation Result Simulation Result VCE(sat)(V) IC(A) Error(%) Measurement Simulation 0.01000 0.03550 0.03636 2.41690 0.02000 0.03400 0.03265 -3.96176 0.05000 0.03450 0.03292 -4.59420 0.10000 0.04000 0.03954 -1.14000 0.20000 0.05850 0.05619 -3.94872 0.50000 0.10500 0.10836 3.19619 1.00000 0.19000 0.19480 2.52579 2.00000 0.42500 0.40721 -4.18659 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
- 11. VBE(Sat)-IC Characteristics Circuit Simulation Result 10V 1.0V 100mV 10mA 100mA 1.0A 5.0A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SC5808-TL-E F1 F I1 5 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
- 12. Comparison Graph Circuit Simulation Result Simulation Result VBE(sat)(V) IC(A) Error(%) Measurement Simulation 0.01000 0.665 0.643 -3.236 0.02000 0.685 0.665 -2.861 0.05000 0.725 0.697 -3.802 0.10000 0.755 0.726 -3.820 0.20000 0.800 0.763 -4.656 0.50000 0.870 0.836 -3.897 1.00000 0.950 0.931 -2.038 2.00000 1.100 1.096 -0.373 2.50000 1.200 1.173 -2.258 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
- 13. Switching Characteristics Circuit simulation result 10V 300V 1 2 250V 5V 200V 150V 0V 100V 50V >> -5V 0V 0s 2us 4us 6us 8us 10us 12us 14us 16us 18us 1 V(L2:2) 2 V(Q1:c) Time Evaluation circuit L1 RL 1 2 30nH 133 D1 R1 L2 12.22 1 2 D1N5817 Q1 D2 R2 Q2SC5808-TL-E VCC 30n V1 = 5 V2 = -5 TD = 8u V1 D1N5817 8.3 200 TF = 100ns PW = 20us PER = 500us TR = 100ns 0 Simulation result Measurement Simulation %Error tf (us) 0.2500 0.2497 -0.1244 tstg (us) 2.5000 2.5006 0.0240 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
- 14. Output Characteristics Circuit Simulation Result 2.0A 1.8A 200mA 150mA 1.6A 1.4A 100mA 1.2A 1.0A 50mA 0.8A 0.6A 0.4A 0.2A 0A IB=0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V IC(Q1) V_V1 Evaluation Circuit Q1 Q2SC5808-TL-E I1 V1 0Adc 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
- 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15