SPICE MODEL of 2SA1036KT146R in SPICE PARK
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The document presents a device modeling report for the 2SA1036KT146R transistor from ROHM Semiconductor, detailing its PSPICE model and various electrical characteristics. It includes parameters such as saturation current, forward and reverse beta, capacitance characteristics, and analysis of simulation results compared to measurements. Key findings and graph plots of characteristics such as VCE(sat) and VBE(sat) are also included, illustrating comparisons between simulations and measured values.
SPICE MODEL of 2SA1036KT146R in SPICE PARK
- 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SA1036KT146R MANUFACTURER: ROHM Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
- 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
- 3. Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
- 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation Emitter Current All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
- 5. Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
- 6. C-B Capacitance Characteristics Measurement Simulation E-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
- 7. Transistor hFE-IC Characteristics Circuit Simulation Result 1.0K 100 10 -1.0mA -1.0A IC(Q1)/ IB(Q1) IC(Q1) Evaluation Circuit V1 Q1 Q2SA1036KT146R -3V I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
- 8. Comparison Graph Circuit Simulation Result Simulation Result hFE Ic(mA) Error(%) Measurement Simulation -1.000 298.000 303.930 1.990 -2.000 301.750 306.910 1.710 -5.000 303.940 308.480 1.494 -10.000 302.180 307.597 1.793 -20.000 298.510 304.037 1.852 -50.000 287.020 291.749 1.648 -100.000 267.760 271.357 1.343 -200.000 229.830 233.281 1.502 -500.000 140.650 141.805 0.821 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
- 9. VCE(Sat)-IC Characteristics Circuit Simulation Result -1.0V -10mV -1.0mA -1.0A V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 Q2SA1036KT146R F1 0Adc F 10 I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
- 10. Comparison Graph Circuit Simulation Result Simulation Result VCE(sat)(V) IC(mA) Error(%) Measurement Simulation -1.000 -0.0310 -0.0314 1.1290 -2.000 -0.0295 -0.0287 -2.8508 -5.000 -0.0290 -0.0287 -1.2000 -10.000 -0.0315 -0.0326 3.4667 -20.000 -0.0405 -0.0417 2.9259 -50.000 -0.0645 -0.0665 3.1395 -100.000 -0.1000 -0.1025 2.5140 -200.000 -0.1700 -0.1673 -1.5694 -500.000 -0.3400 -0.3455 1.6144 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
- 11. VBE(Sat)-IC Characteristics Circuit Simulation Result -10V -10mV -1.0mA -1.0A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SA1036KT146R F1 0Adc F 10 I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
- 12. Comparison Graph Circuit Simulation Result Simulation Result VBE(sat)(V) IC(mA) Error(%) Measurement Simulation -1.000 -0.6220 -0.6223 0.0455 -2.000 -0.6440 -0.6434 -0.0995 -5.000 -0.6760 -0.6728 -0.4741 -10.000 -0.7020 -0.6970 -0.7094 -20.000 -0.7300 -0.7239 -0.8412 -50.000 -0.7720 -0.7653 -0.8692 -100.000 -0.8080 -0.8040 -0.4986 -200.000 -0.8520 -0.8545 0.2958 -500.000 -0.9360 -0.9589 2.4435 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
- 13. Ft - IC Characteristics Circuit Simulation Result 1.0G 100M 30M -500u -1.0m -50m ZeroCross(DB(IC(Q2))) V_Ic Evaluation Circuit H1 IDB + - H 0 Q1 Q2 Q2SA1036KT146R Q2SA1036KT146R Vce G1 F1 -5Vdc IC + I1 0 0 1Aac - G 0Adc Ic F 0 GAIN = 1e6 0 0 0 0 Simulation Result FT(MHz) -IC(mA) Error(%) Measurement Simulation 20.000 220.000 217.120 -1.309 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
- 14. Output Characteristics Circuit Simulation Result -200mA -180mA -700uA -160mA -600uA -140mA -500uA -120mA -400uA -100mA -300uA -80mA -60mA -200uA -40mA -100uA -20mA 0A IB=-0 0V -0.5V -1.5V -2.5V -3.5V -4.5V IC(Q1) V_V1 Evaluation Circuit V1 Q1 Q2SA1036KT146R -5Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
- 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15