SPICE MODEL of 2SC5980-TL-E in SPICE PARK
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The document is a device modeling report for the transistor part number 2SC5980-TL-E, manufactured by Sanyo Bee Technologies Inc. It includes detailed specifications and characteristics such as saturation current, forward and reverse beta parameters, and capacitance characteristics, supported by simulation results and error analysis. The report also covers switching characteristics and output characteristics with comprehensive circuit evaluation results.
SPICE MODEL of 2SC5980-TL-E in SPICE PARK
- 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SC5980-TL-E MANUFACTURER: SANYO Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
- 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
- 3. Reverse Reverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
- 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation Emitter Current All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
- 5. Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
- 6. C-B Capacitance Characteristics Measurement Simulation E-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
- 7. Transistor hFE-IC Characteristics Circuit Simulation Result 1.0K 100 10 5.0 1.0mA 10mA 100mA 1.0A 10A I(vsence)/ IB(Q1) I(vsence) Evaluation Circuit v sence 0Vdc Q1 Q2SC5980 V1 I1 2Vdc 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
- 8. Comparison Graph Circuit Simulation Result Simulation Result hFE IC(A) Error(%) Measurement Simulation 0.01 308.000 306.624 -0.447 0.02 308.000 308.736 0.239 0.05 308.000 310.809 0.912 0.10 308.000 309.434 0.466 0.20 302.000 306.407 1.459 0.50 295.000 297.557 0.867 1.00 285.000 282.756 -0.787 2.00 260.000 254.139 -2.254 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
- 9. VCE(Sat)-IC Characteristics Circuit Simulation Result 1.0V 100mV 10mV 10mA 100mA 1.0A 10A V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 Q2SC5980 F1 F I1 50 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
- 10. Comparison Graph Circuit Simulation Result Simulation Result VCE(sat)(V) IC(A) Error(%) Measurement Simulation 0.01 0.027 0.027 -1.48 0.02 0.027 0.027 1.13 0.05 0.028 0.028 1.43 0.10 0.031 0.031 2.95 0.20 0.037 0.038 3.01 0.50 0.053 0.055 3.77 1.00 0.080 0.083 3.75 2.00 0.140 0.135 -3.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
- 11. VBE(Sat)-IC Characteristics Circuit Simulation Result 3.0V 1.0V 200mV 10mA 100mA 1.0A 10A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SC5980 F1 F I1 50 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
- 12. Comparison Graph Circuit Simulation Result 3.0V 1.0V 200mV 10mA 100mA 1.0A 10A V(Q1:b) IC(Q1) Simulation Result VBE(sat)(V) IC(A) Error(%) Measurement Simulation 0.01 0.620 0.622 0.32 0.02 0.630 0.641 1.75 0.05 0.660 0.667 1.06 0.10 0.680 0.688 1.18 0.20 0.700 0.711 1.57 0.50 0.740 0.749 1.22 1.00 0.780 0.789 1.15 2.00 0.840 0.846 0.71 5.00 0.960 0.981 2.19 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
- 13. Switching Characteristics Circuit simulation result 10V 60V 1 2 40V 5V 20V 0V 0V -20V -5V -40V >> -10V -60V 0s 1us 2us 3us 4us 5us 6us 7us 8us 9us 1 V(L2:1) 2 V(Q1:c) Time Evaluation circuit L1 RL 1 2 30nH 10 D1 R1 L2 29.5 VCC 1 2 D1N5817 Q1 V1 = 5 D2 R2 Q2SC5980 30n V2 = -5 TD = 5u V1 25 TF = 1ns D1N5817 42 TR = 1ns PW = 20us PER = 20us 0 Simulation result Measurement Simulation %Error tstg (ns) 420.000 420.469 0.112 tf (ns) 25.000 25.703 2.812 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
- 14. Output Characteristics Circuit Simulation Result 8.0A 100mA 80mA 60mA 7.0A 40mA 6.0A 30mA 5.0A 20mA 4.0A 15mA 3.0A 10mA 2.0A 5mA 1.0A IB=0 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V IC(Q1) V_V1 Evaluation Circuit Q1 Q2SC5980 V1 I1 1Vdc 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
- 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15